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1. 发明授权

US07169256B2 Plasma processor with electrode responsive to multiple RF frequencies 有权
标题翻译：等离子体处理器，电极响应多个RF频率
公开(公告)号：US07169256B2
公开(公告)日：2007-01-30
申请号：US10855706
申请日：2004-05-28
申请人： Raj Dhindsa , Felix Kozakevich , David Douglas Trussell
发明人： Raj Dhindsa , Felix Kozakevich , David Douglas Trussell
IPC分类号： H01L21/306
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165 , H01J37/3299
摘要： A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.
摘要翻译：处理工件的等离子体处理器包括频率为2MHz，27MHz和60MHz的源，由三个匹配网络施加到包括工件的真空室中的电极。或者通过第四匹配网络将60MHz施加到第二电极。基本上调谐到驱动它们的源的频率的匹配网络包括串联电感，因此2MHz电感超过27MHz网络电感，并且27MHz网络电感超过60MHz网络的电感。匹配网络衰减至少26 DB的驱动它们的源的频率。 27和60 MHz信号源之间的并联电感将2 MHz与27 MHz和60 MHz源分离。串联谐振电路（谐振到约5 MHz）分流2 MHz网络和电极，以帮助将2 MHz源极与电极相匹配。

2. 发明授权

US07405521B2 Multiple frequency plasma processor method and apparatus 有权
标题翻译：多频等离子体处理器的方法和装置
公开(公告)号：US07405521B2
公开(公告)日：2008-07-29
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J7/24 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

3. 发明申请

US20050039682A1 Multiple frequency plasma etch reactor 有权
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：US20050039682A1
公开(公告)日：2005-02-24
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J37/32 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

4. 发明申请

US20080318433A1 Plasma confinement rings assemblies having reduced polymer deposition characteristics 有权
标题翻译：等离子体约束环组件具有降低的聚合物沉积特性
公开(公告)号：US20080318433A1
公开(公告)日：2008-12-25
申请号：US12230236
申请日：2008-08-26
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

5. 发明授权

US07430986B2 Plasma confinement ring assemblies having reduced polymer deposition characteristics 有权
标题翻译：具有降低的聚合物沉积特性的等离子体约束环组件
公开(公告)号：US07430986B2
公开(公告)日：2008-10-07
申请号：US11083241
申请日：2005-03-18
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： H01L21/306 , H01L21/302 , C23C16/00 , C23C16/509
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

6. 发明申请

US20070012659A1 High aspect ratio etch using modulation of RF powers of various frequencies 有权
标题翻译：使用各种频率的RF功率调制的高纵横比蚀刻
公开(公告)号：US20070012659A1
公开(公告)日：2007-01-18
申请号：US11525602
申请日：2006-09-21
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： C03C25/68 , C23F1/00 , H01L21/306 , B44C1/22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。向处理室提供蚀刻剂气体。提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。

7. 发明授权

US08500952B2 Plasma confinement rings having reduced polymer deposition characteristics 有权
标题翻译：具有降低的聚合物沉积特性的等离子体约束环
公开(公告)号：US08500952B2
公开(公告)日：2013-08-06
申请号：US13585570
申请日：2012-08-14
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： C23C16/00 , C23C16/509 , H01L21/306 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

8. 发明授权

US07393432B2 RF ground switch for plasma processing system 有权
标题翻译：射频接地开关等离子体处理系统
公开(公告)号：US07393432B2
公开(公告)日：2008-07-01
申请号：US10953229
申请日：2004-09-29
申请人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
发明人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32568
摘要： An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
摘要翻译：等离子体处理系统中的布置，用于选择性地提供电极和地面之间的RF接地路径。该装置包括RF传导路径结构和环形结构。环形结构和RF传导路径结构具有相对于彼此的两个相对位置。两个相对位置的第一相对位置的特征在于环形结构与RF传导路径结构电耦合以提供到RF传导路径结构的接地。两个相对位置的第二相对位置的特征在于环形结构与RF传导路径电耦合。

9. 发明申请

US20060118518A1 High aspect ratio etch using modulation of RF powers of various frequencies 有权
公开(公告)号：US20060118518A1
公开(公告)日：2006-06-08
申请号：US10737022
申请日：2003-12-15
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

10. 发明申请

US20050264218A1 Plasma processor with electrode responsive to multiple RF frequencies 有权
标题翻译：等离子体处理器，电极响应多个RF频率
公开(公告)号：US20050264218A1
公开(公告)日：2005-12-01
申请号：US10855706
申请日：2004-05-28
申请人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165 , H01J37/3299
摘要： A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.
摘要翻译：处理工件的等离子体处理器包括频率为2MHz，27MHz和60MHz的源，由三个匹配网络施加到包括工件的真空室中的电极。或者通过第四匹配网络将60MHz施加到第二电极。基本上调谐到驱动它们的源的频率的匹配网络包括串联电感，因此2MHz电感超过27MHz网络电感，并且27MHz网络电感超过60MHz网络的电感。匹配网络衰减至少26 DB的驱动它们的源的频率。 27和60 MHz信号源之间的并联电感将2 MHz与27 MHz和60 MHz信号源分离。串联谐振电路（谐振到约5 MHz）分流2 MHz网络和电极，以帮助将2 MHz源极与电极相匹配。

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