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    • 7. 发明授权
    • Multi-channel digital to analog converter
    • 多通道数模转换器
    • US5294927A
    • 1994-03-15
    • US868070
    • 1992-04-13
    • Roger A. LevinsonJohn M. CarusoAli Tasdighi
    • Roger A. LevinsonJohn M. CarusoAli Tasdighi
    • H03M1/68H03M1/76
    • H03M1/682H03M1/765
    • A digital to analog converter employs an operational amplifier as an active summing device for summing a first analog voltage corresponding to most significant bits of a digital value and a second analog voltage corresponding to least significant bits of the digital value. In a multi-channel application, a single MSB DAC can be shared by all channels through first MUXs in each channel with each channel having an independent LSB DAC. Alternatively, a single LSB DAC can be shared by all channels through second MUXs in each channel. Gain of the voltage summing operational amplifier in each channel is determined by values of a resistor connecting the output of the LSB DAC to the inverting negative input of the operational amplifier and of a feedback resistor connecting the amplifier output to the inverting negative input.
    • 数模转换器采用运算放大器作为有源求和装置,用于将对应于数字值的最高有效位的第一模拟电压与对应于数字值的最低有效位的第二模拟电压相加。 在多通道应用中,单个MSB DAC可以通过每个通道中的第一个MUX通过所有通道共享,每个通道具有独立的LSB DAC。 或者,单个LSB DAC可以通过每个通道中的第二MUX由所有通道共享。 每个通道中电压求和运算放大器的增益由连接LSB DAC的输出到运算放大器的反相负输入的电阻值以及将放大器输出连接到反相负输入的反馈电阻决定。
    • 9. 发明授权
    • Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology
    • 用于屏蔽隧道电路和浮栅的方法和装置,用于在通用CMOS技术中集成浮栅参考电压
    • US07759727B2
    • 2010-07-20
    • US11639658
    • 2006-12-14
    • Alexander KalnitskyJohn M. Caruso
    • Alexander KalnitskyJohn M. Caruso
    • G11C16/04
    • G11C27/005G11C16/3418H01L27/115H01L27/11521H01L27/11558H01L29/7883
    • A method and corresponding structure for shielding a floating gate tunneling element. The method comprises disposing a floating gate over a gate oxide using standard CMOS processing in two active areas defined by first and second doped well regions formed in a substrate surrounded by field oxide, and forming a floating gate shield layer so as to enclose the floating gate. The floating gate includes a first floating gate portion over an active area in the first doped well region and a second floating gate portion over the active area in the second doped well region. The first floating gate portion is substantially smaller than the second floating gate portion so as to enable adequate voltage coupling for Fowler-Nordheim tunneling to occur between the first doped well region and the first floating gate portion. The direction of tunneling is determined by high voltage application to one of the doped well regions.
    • 一种用于屏蔽浮动栅极隧道元件的方法和相应的结构。 该方法包括使用在由场氧化物包围的衬底中形成的第一和第二掺杂阱区域限定的两个有源区域中的标准CMOS处理在栅极氧化物上设置浮置栅极,以及形成浮置栅极屏蔽层以便包围浮置栅极 。 浮置栅极包括在第一掺杂阱区域中的有源区域上的第一浮动栅极部分和位于第二掺杂阱区域中的有源区域上的第二浮动栅极部分。 第一浮栅部分基本上小于第二浮栅部分,以便能够在第一掺杂阱区域和第一浮栅部分之间产生用于Fowler-Nordheim隧道的足够的电压耦合。 通过高压施加到掺杂阱区之一来确定隧道的方向。