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1. 发明授权

US4732646A Method of forming identically positioned alignment marks on opposite sides of a semiconductor wafer 失效
标题翻译：在半导体晶片的相对侧上形成相同定位的对准标记的方法
公开(公告)号：US4732646A
公开(公告)日：1988-03-22
申请号：US26510
申请日：1987-03-17
申请人： Gerhard Elsner , Johann Greschner , Holger Hinkel
发明人： Gerhard Elsner , Johann Greschner , Holger Hinkel
IPC分类号： H01L21/68 , H01L21/027 , H01L21/306 , H01L21/67 , H01L23/544 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L23/544 , H01L2223/54453 , H01L2924/0002 , Y10S438/975
摘要： A method of automatically forming identically positioned alignment marks on the front side and the back side of a silicon wafer especially prepared for use in silicon micromechanical technology. The front side and the back side of the silicon wafer are coated with an insulating layer. High-energy heavy ions are directed onto the front side insulating layer. The heavy ions penetrate the front side insulating layer, the wafer, and the back side insulating layer, thus forming single disturbed crystal lattice nuclear tracks in both insulating layers, with the wafer remaining undisturbed.The nuclear tracks in both insulating layers are etched so that corresponding identically positioned pores are opened. These pores are used as alignment marks for individual further method steps.
摘要翻译：在硅晶片的正面和背面上自动形成相同定位的对准标记的方法，特别是准备用于硅微机械技术。硅晶片的前侧和后侧涂有绝缘层。高能重离子被引导到前侧绝缘层上。重离子穿透前侧绝缘层，晶片和背面绝缘层，从而在两个绝缘层中形成单个受扰的晶格核磁道，晶片保持不受干扰。蚀刻两个绝缘层中的核轨道，使得相应相同定位的孔被打开。这些孔用作单独的其它方法步骤的对准标记。

2. 发明授权

US6061074A Ion generator for ionographic print heads 失效
标题翻译：离子发生器用于离子印刷头
公开(公告)号：US6061074A
公开(公告)日：2000-05-09
申请号：US778982
申请日：1997-01-06
申请人： Johann Bartha , Frank Druschke , Gerhard Elsner , Johann Greschner
发明人： Johann Bartha , Frank Druschke , Gerhard Elsner , Johann Greschner
IPC分类号： B41J2/415 , H01J3/04 , H01J27/26
CPC分类号： B41J2/415 , H01J27/26 , H01J3/04
摘要： An ion generator for the generation of a plasma is assembled from module subassemblies. The first subassembly includes a dielectric plate 1, on the first surface 1a of which are located a large number of first electrodes 3, and the second surface 1b of which is coated with a structured conductive layer 2. The second subassembly includes an aperatured spacer plate with a large number of dielectric spacers with a second electrode 5 on the side facing away from the dielectric plate 1. In joining the subassemblies together, the aperatured spacer plate is connected to the dielectric plate 1 at its first surface 1a in such a way that cavities 6 for accommodating plasma are formed by the first electrodes 3, parts of the first surface 1a of the dielectric plate 1 and the spacers 4 with the second electrodes 5. The first set of electrodes 3 shield the points where the subassemblies are bonded together from plasma in the cavities.
摘要翻译：用于产生等离子体的离子发生器由模块子组件组装。第一子组件包括电介质板1，其第一表面1a位于大量的第一电极3上，其第二表面1b涂覆有结构化导电层2.第二子组件包括温度分隔板具有大量的电介质隔离物，其在背离电介质板1的一侧具有第二电极5.在将子组件接合在一起时，高温隔离板在其第一表面1a处以电连接板1连接到电介质板1，用于容纳等离子体的空腔6由电介质板1的第一表面1a的一部分和具有第二电极5的间隔物4的第一电极3形成。第一组电极3将组件结合在一起的点空腔中的等离子体。

3. 发明授权

US5939893A Contact probe arrangement for functional electrical testing 失效
标题翻译：用于功能电气测试的接触式探头布置
公开(公告)号：US5939893A
公开(公告)日：1999-08-17
申请号：US823262
申请日：1997-03-24
申请人： Gerhard Elsner , Johann Greschner , Roland Stoehr
发明人： Gerhard Elsner , Johann Greschner , Roland Stoehr
IPC分类号： G01R1/073
CPC分类号： G01R1/07357
摘要： A contact probe arrangement for electrical functional testing, including a first stack of perforated plates, a second stack of perforated plates and a plurality of contact probes. The probes are in contact with the second stack of perforated plates, and in communication with the first stack, the probes are arranged and dimensioned such that the probes are capable of lateral buckling and capable of being guided through the first stack. The contact probe arrangement also includes a test card, a counterholding piece attached to the test card, and a pressure plate, the pressure plate movably connected to the test card. The first perforated plate is connected to the second perforated plate such that the first perforated plate is capable of movement toward and away from the second perforated plate and the second perforated plate is connected to the first perforated plate such that the second perforated plate is capable of movement toward and away from the first perforated plate.
摘要翻译：一种用于电功能测试的接触探针装置，包括多层板的第一堆叠，多孔板的第二堆叠和多个接触探针。探针与第二堆叠的多孔板接触，并且与第一堆叠连通，探针的布置和尺寸使得探针能够横向屈曲并且能够被引导穿过第一堆叠。接触探针装置还包括测试卡，附接到测试卡的反夹持件和压板，压力板可移动地连接到测试卡。第一多孔板连接到第二多孔板，使得第一多孔板能够朝向和远离第二多孔板移动，并且第二多孔板连接到第一多孔板，使得第二多孔板能够朝向和远离第一穿孔板的运动。

4. 发明授权

US5863636A Adhesive bond for densely ordered elements 失效
标题翻译：用于密集有序元素的粘合剂
公开(公告)号：US5863636A
公开(公告)日：1999-01-26
申请号：US887377
申请日：1997-07-02
申请人： Frank Druschke , Gerhard Elsner , Johann Greschner , Roland Stoehr
发明人： Frank Druschke , Gerhard Elsner , Johann Greschner , Roland Stoehr
IPC分类号： G01R1/073 , B32B3/10
CPC分类号： G01R1/07357 , Y10T428/24314 , Y10T428/24322
摘要： The invention relates to an adhesive bond 1 for a plurality of densely packed elements 4a, 4b, 4c guided into a plate pack 3. At the plate surface 2 with the adhesive bond 1 the guidance holes 5a are made larger than the guidance holes 5b in the remainder of the plate pack (3) and the adhesive bond is effected by means of a highly viscous adhesive. Because of the larger opening 5a, an adhesive reservoir 10 is formed at the plate surface 2. This makes it possible to use high viscosity adhesives. The geometric features and the use of a highly viscous adhesive make it possible to manufacture durable and heat-resistant adhesive bonds for elements such as wires, glass fibers or micromechanical components.
摘要翻译：本发明涉及一种用于多个密集填充元件4a，4b，4c的粘合剂粘合剂1，其被引导到板组件3中。在具有粘合剂粘合剂1的板表面2处，引导孔5a被制成大于导向孔5b 板组件（3）的其余部分和粘合剂通过高粘度粘合剂进行。由于较大的开口5a，在板表面2处形成粘合剂储存器10.这使得可以使用高粘度粘合剂。几何特征和高粘度粘合剂的使用使得可以制造用于诸如线，玻璃纤维或微机械部件的元件的耐用和耐热粘合剂粘合。

5. 发明授权

US6091124A Micromechanical sensor for AFM/STM profilometry 失效
标题翻译：用于AFM / STM轮廓测量的微机械传感器
公开(公告)号：US6091124A
公开(公告)日：2000-07-18
申请号：US876167
申请日：1997-06-13
申请人： Thomas Bayer , Johann Greschner , Helga Weiss
发明人： Thomas Bayer , Johann Greschner , Helga Weiss
IPC分类号： G01B7/30 , G01L1/14 , G01N37/00 , G01Q60/16 , G01Q60/38 , G01Q70/10 , G01Q70/14 , G01H23/00
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q60/38 , G01Q70/10 , G01Q70/14 , Y10S977/878
摘要： The invention pertains to a micromechanical sensor for AFM/STM profilometry which consists of a beam with a point for interaction with a test surface to be sampled on one end and a fixing block on the other end. The point consists of a basically conical shank with a countersunk point at the end of the shank. The micromechanical sensor has excellent mechanical rigidity and is particularly suited to the measurement of extremely deep and narrow structures with positive side flank angles.
摘要翻译：本发明涉及用于AFM / STM轮廓测量的微机械传感器，其由具有与待测样品在一端被取样的测试表面相互作用的点和另一端的固定块组成的光束组成。该点包括在柄端部具有埋头点的基本上圆锥形的柄。微机械传感器具有优异的机械刚度，特别适用于具有正侧面角的极深和窄结构的测量。

6. 发明授权

US5866443A Very dense integrated circuit package and method for forming the same 失效
标题翻译：非常密集的集成电路封装及其形成方法
公开(公告)号：US5866443A
公开(公告)日：1999-02-02
申请号：US884074
申请日：1997-06-27
申请人： H. Bernhard Pogge , Johann Greschner , Howard Leo Kalter , Raymond James Rosner
发明人： H. Bernhard Pogge , Johann Greschner , Howard Leo Kalter , Raymond James Rosner
IPC分类号： H01L21/28 , H01L21/301 , H01L21/98 , H01L25/065 , H01L29/06 , H01L21/44
CPC分类号： H01L25/50 , H01L25/0655 , H01L29/0657 , H01L2924/0002
摘要： Disclosed is an integrated circuit configuration including a carrier having recesses for supporting individual semiconductor die units. The semiconductor die units and the carrier recesses have lithographically defined dimensions so as to enable precise alignment and a high level of integration.
摘要翻译：公开了一种集成电路结构，其包括具有用于支撑各个半导体管芯单元的凹部的载体。半导体管芯单元和载体凹槽具有光刻定义的尺寸，以便能够精确对准和高集成度。

7. 发明授权

US5707537A Bulk removal, transport and storage fixture for small batch-fabricated devices 失效
标题翻译：批量拆装，运输和储存小批量装置的夹具
公开(公告)号：US5707537A
公开(公告)日：1998-01-13
申请号：US477058
申请日：1995-06-07
申请人： Johann Bartha , Johann Greschner , Klaus Meissner , Volkhard Wolf
发明人： Johann Bartha , Johann Greschner , Klaus Meissner , Volkhard Wolf
IPC分类号： H01L21/68 , H01L21/687 , H01L21/00 , H05K7/02
CPC分类号： H01L21/6835
摘要： The supporting plate and the bulk removal, transport and storage fixture for small batch-fabricated devices (1) have openings (2) penetrating from the top side (3) to the bottom side (4) of the plate and raised retaining means (5) on the bottom side (4). The raised retaining means (5) are provided in sufficient number and are arranged according to the shape of the devices (1) for retaining the devices. Flange means (7) which are designed for providing vacuum or agents to the devices (1) on the supporting plate are connected to the supporting plate thus forming a fixture. By changing the arrangement of the raised retaining means (5) and/or the openings (2) the supporting plate and the fixture may easily be adapted to different sizes and kinds of devices.
摘要翻译：用于小批量装置（1）的支撑板和散装移除，运输和储存装置具有从板的顶侧（3）穿过底部侧（4）的开口（2），并且将保持装置（5 ）在底面（4）上。提升保持装置（5）设置足够数量，并根据用于保持装置的装置（1）的形状布置。设计用于向支撑板上的装置（1）提供真空或试剂的法兰装置（7）连接到支撑板，从而形成夹具。通过改变凸起保持装置（5）和/或开口（2）的布置，支撑板和夹具可以容易地适应于不同尺寸和种类的装置。

8. 发明授权

US5658472A Method for producing deep vertical structures in silicon substrates 失效
标题翻译：在硅衬底中生产深垂直结构的方法
公开(公告)号：US5658472A
公开(公告)日：1997-08-19
申请号：US477059
申请日：1995-06-07
申请人： Johann Bartha , Johann Greschner , Robert Junginger , Georg Kraus
发明人： Johann Bartha , Johann Greschner , Robert Junginger , Georg Kraus
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/308 , H01L21/82
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/3081
摘要： A method is provided for producing deep substantially vertical structures in silicon substrates, wherein in a first step, the silicon substrate is anisotropically plasma etched to a first predetermined depth, thereby creating a first structure. Subsequently, the surface of the substrate is covered conformally with an etch-resistant coating, and the horizontal parts of said coating are selectively removed. Following this removal, the substrate is anisotropically plasma etched at low temperatures to a second predetermined depth with a mixture of SF.sub.6 /O.sub.2, whereby a second structure is created. Finally, the vertical parts of the coating are removed.
摘要翻译：提供一种用于在硅衬底中产生深基本上垂直的结构的方法，其中在第一步骤中，将硅衬底各向异性地等离子体蚀刻到第一预定深度，从而产生第一结构。随后，基材的表面与耐蚀刻涂层共形地覆盖，并且选择性地去除所述涂层的水平部分。在该去除之后，将衬底在低温下各向异性地刻蚀至具有SF6 / O2混合物的第二预定深度，由此产生第二结构。最后，去除涂层的垂直部分。

9. 发明授权

US5282924A Micromechanical sensor fabrication process 失效
标题翻译：微机械传感器制造工艺
公开(公告)号：US5282924A
公开(公告)日：1994-02-01
申请号：US034639
申请日：1993-03-22
申请人： Thomas Bayer , Johann Greschner
发明人： Thomas Bayer , Johann Greschner
IPC分类号： G01Q70/10 , B44C1/22 , B81C1/00 , C03C15/00 , C23F4/00 , G01B7/34 , G01B21/30 , G01Q60/04 , G01Q60/08 , G01Q60/16 , G01Q60/38 , G01Q70/16 , H01J9/14 , H01J37/00 , H01J37/28 , H01L21/306 , C03C25/06
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/08 , G01Q60/16 , Y10S977/878
摘要： A method for producing micromechanical sensors for the AFM/STM/MFM profilometry is described in which a multiple step mask of cantilever beam and tip is transferred step by step into the wafer substrate by reactive ion etching. A particular highly anisotropic etching step is used for etching and shaping of the tip. This process step uses an Ar/C12 ambient at a pressure of about 100 .sup.6 bar and a self bias voltage of about 300 V DC. The ratio of pressure to self bias voltage determines the concave shape of the tip side-walls. This etching step is followed by a thermal oxidation step. The oxidation is carried out for a time until the oxidation fronts at the thinnest point of the tip shaft touch each other. A stripping process with buffered hydrofluoric acid gently removes the thermally grown oxide. The oxidation process allows--via oxidation time--a modification of tip height and angle in an extremely controllable manner. To prevent sticking of the tip to the structure to be profiled the ratio of tip diameter to tip height should be about 1:10. Should this ratio be exceeded the tip has to be arranged on a pedestal. The structure, comprising a cantilever beam and a tip on pedestal, can be produced with the same but slightly modified process of the invention.
摘要翻译：描述了用于AFM / STM / MFM轮廓测量法的微机械传感器的制造方法，其中悬臂梁和尖端的多步骤掩模通过反应离子蚀刻逐步转移到晶片衬底中。特别是高度各向异性的蚀刻步骤用于尖端的蚀刻和成型。该工艺步骤在约100 6bar的压力和约300V DC的自偏压下使用Ar / C12环境。压力与自偏压的比率决定了顶端侧壁的凹形。该蚀刻步骤之后是热氧化步骤。氧化进行一段时间，直到尖端轴的最薄点处的氧化前沿相互接触。用缓冲氢氟酸的汽提过程轻轻地除去热生长的氧化物。氧化过程允许通过氧化时间 - 以极其可控的方式改变尖端高度和角度。为了防止尖端粘附到待成型的结构上，尖端直径与尖端高度的比率应为约1:10。如果超过该比率，则必须将尖端布置在基座上。包括悬臂梁和基座上的尖端的结构可以用本发明的相同但略微改进的方法制造。

10. 发明授权

US5242541A Method of producing ultrafine silicon tips for the AFM/STM profilometry 失效
标题翻译：生产AFM / STM型材超导硅胶的方法
公开(公告)号：US5242541A
公开(公告)日：1993-09-07
申请号：US568451
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
IPC分类号： G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/16 , G01Q70/10 , Y10S977/878
摘要： A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising:1. providing a silicon substrate and applying a silicon dioxide layer thereto;2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching;3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate;4. thinning the shaft and forming a base by isotropic wet etching; and5. removing the mask by etching.The resulting tip shaft with a rectangular end may be pointed by argon ion milling.In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.
摘要翻译：描述了一种用于生产用于AFM / STM轮廓测量法的超细硅尖端的方法，包括：1.提供硅衬底并向其施加二氧化硅层; 2.通过光刻和湿法或干蚀刻在所述二氧化硅层中产生掩模; 3.通过将在步骤2中产生的掩模图案通过反应离子蚀刻转移到硅衬底中来生产尖端轴; 4.通过各向同性湿法蚀刻使轴变薄并形成基座; 和5.通过蚀刻去除掩模。所产生的具有矩形端部的尖端轴可以通过氩离子铣削来尖。在第二实施例中，在步骤5之前，通过完整的二氧化硅掩模存在各向异性湿法蚀刻步骤，从而产生正好在掩模下面的轴的负轮廓。在该蚀刻步骤之后，通过蚀刻除去掩模。

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