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1. 发明授权

US06547978B2 Method of heating a semiconductor substrate 失效
公开(公告)号：US06547978B2
公开(公告)日：2003-04-15
申请号：US10017001
申请日：2001-12-13
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma , Chang-Lin Hsieh
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma , Chang-Lin Hsieh
IPC分类号： B44C0122
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature. The copper feature integrity is protected by several different mechanisms: 1) The reactive etchant species are designed to be only moderately aggressive, so that an acceptable etch rate is achieved without loss of control over the feature profile or the etch surface; 2) Hydrogen is applied over the etch surface so that it is absorbed onto the etch surface, where it acts as a boundary which must be crossed by the reactive species and a chemical modulator for the reactive species; and 3) Process variables are adjusted so that byproducts from the etch reaction are rendered more volatile and easily removable from the etch surface. In an inductively coupled plasma etch chamber, we have observed that the preferred chlorine reactive species are generated when the chlorine is dissociated from compounds rather than furnished as Cl2 gas.

2. 发明授权

US06534416B1 Control of patterned etching in semiconductor features 失效
公开(公告)号：US06534416B1
公开(公告)日：2003-03-18
申请号：US09637509
申请日：2000-08-11
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.

3. 发明授权

US06489247B1 Copper etch using HCl and HBR chemistry 失效
标题翻译：铜蚀刻使用HCl和HBR化学
公开(公告)号：US06489247B1
公开(公告)日：2002-12-03
申请号：US09393446
申请日：1999-09-08
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.
摘要翻译：铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％。最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

4. 发明授权

US6008140A Copper etch using HCI and HBr chemistry 失效
标题翻译：铜蚀刻使用HCI和HBr化学
公开(公告)号：US6008140A
公开(公告)日：1999-12-28
申请号：US911878
申请日：1997-08-13
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
IPC分类号： C23F4/00 , H01L21/02 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.
摘要翻译：铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％。最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

5. 发明授权

US06331380B1 Method of pattern etching a low K dielectric layer 失效
标题翻译：图案蚀刻低K电介质层的方法
公开(公告)号：US06331380B1
公开(公告)日：2001-12-18
申请号：US09549262
申请日：2000-04-14
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： G03C558
CPC分类号： H01L21/31138 , H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136 , H01L21/32139
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

6. 发明授权

US6143476A Method for high temperature etching of patterned layers using an organic mask stack 失效
标题翻译：使用有机掩模叠层对图案化层进行高温蚀刻的方法
公开(公告)号：US6143476A
公开(公告)日：2000-11-07
申请号：US991219
申请日：1997-12-12
申请人： Yan Ye , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma
IPC分类号： H01L21/302 , H01L21/027 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/3213 , G03C5/58
CPC分类号： H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/31116 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136
摘要： The present disclosure pertains to a method of patterning a semiconductor device feature which provides for the easy removal of any residual masking layer which remains after completion of a pattern etching process. The method provides for a multi-layered masking structure which includes a layer of high-temperature organic-based masking material overlaid by either a layer of a high-temperature inorganic masking material which can be patterned to provide an inorganic hard mask, or by a layer of high-temperature imageable organic masking material which can be patterned to provide an organic hard mask. The hard masking material is used to transfer a pattern to the high-temperature organic-based masking material, and then the hard masking material is removed. The high-temperature organic-based masking material is used to transfer the pattern to an underlying semiconductor device feature.
摘要翻译：本公开涉及一种图案化半导体器件特征的方法，其提供容易去除在图案蚀刻工艺完成之后保留的任何残留掩模层。该方法提供了一种多层掩模结构，其包括由可以被图案化以提供无机硬掩模的高温无机掩蔽材料层覆盖的高温有机基掩蔽材料层，或由可以图案化以提供有机硬掩模的高温可成像有机掩模材料层。使用硬掩模材料将图案转印到高温有机基掩蔽材料上，然后去除硬掩模材料。高温有机基掩蔽材料用于将图案转移到下面的半导体器件特征。

7. 发明授权

US6080529A Method of etching patterned layers useful as masking during subsequent etching or for damascene structures 失效
标题翻译：在随后的蚀刻或镶嵌结构期间蚀刻用作掩模的图案化层的方法
公开(公告)号：US6080529A
公开(公告)日：2000-06-27
申请号：US174763
申请日：1998-10-19
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： H01L21/302 , H01L21/027 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/3213 , G03C5/58
CPC分类号： H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/31116 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

8. 发明授权

US6153530A Post-etch treatment of plasma-etched feature surfaces to prevent corrosion 失效
标题翻译：蚀刻后处理等离子蚀刻特征表面以防止腐蚀
公开(公告)号：US6153530A
公开(公告)日：2000-11-28
申请号：US270286
申请日：1999-03-16
申请人： Yan Ye , Xiaoye Zhao , Chang-Lin Hsieh , Xian-Can Deng , Wen-Chiang Tu , Chung-Fu Chu , Diana Xiaobing Ma
发明人： Yan Ye , Xiaoye Zhao , Chang-Lin Hsieh , Xian-Can Deng , Wen-Chiang Tu , Chung-Fu Chu , Diana Xiaobing Ma
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L21/00
CPC分类号： H01L21/02071
摘要： Disclosed herein is a post-etch treatment for plasma etched metal-comprising features in semiconductor devices. The post-etch treatment significantly reduces or eliminates surface corrosion of the etched metal-comprising feature. It is particularly important to prevent the formation of moisture on the surface of the feature surface prior to an affirmative treatment to remove corrosion-causing contaminants from the feature surface. Avoidance of moisture formation is assisted by use of a high vacuum; use of an inert, moisture-free purge gas; and by maintaining the substrate at a sufficiently high temperature to volatilize moisture. The affirmative post-etch treatment utilizes a plasma to expose the etched metal-comprising feature to sufficient hydrogen which is in a kinetic state permitting reaction with residual halogen-comprising residues on the etched surface, while maintaining the etched feature surface at a temperature which supports volatilization of the byproducts of a reaction between the active hydrogen species and the halogen-comprising residues. For an etched copper surface, if moisture forms on the etched surface prior to an affirmative treatment to remove corrosion-causing contaminants, it is very important to avoid contact of the etched surface with pollutants which are capable of forming copper carbonates and/or copper sulfates.
摘要翻译：本文公开了用于半导体器件中等离子体蚀刻金属的特征的后蚀刻处理。蚀刻后处理显着地减少或消除了蚀刻的金属包含特征的表面腐蚀。特别重要的是在肯定处理之前防止在特征表面的表面上形成湿气以从特征表面除去腐蚀性污染物。通过使用高真空来辅助避免水分形成; 使用惰性，无湿气的吹扫气体; 并且通过将基底保持在足够高的温度以使水分挥发。肯定的后蚀刻处理利用等离子体将含蚀刻金属的特征暴露于足够的氢气，该氢气处于动态状态，允许与蚀刻表面上的残留的含卤素残留物反应，同时将蚀刻的特征表面保持在支持活性氢物质与含卤素残基之间的反应的副产物挥发。对于蚀刻的铜表面，如果在进行肯定处理以除去腐蚀性污染物之前在蚀刻表面上形成水分，则避免蚀刻表面与能够形成碳酸铜和/或硫酸铜的污染物接触是非常重要的。

9. 发明授权

US06488862B1 Etched patterned copper features free from etch process residue 失效
标题翻译：蚀刻图案铜特征不含蚀刻工艺残留物
公开(公告)号：US06488862B1
公开(公告)日：2002-12-03
申请号：US09428307
申请日：1999-10-27
申请人： Yan Ye , Diana Xiaobing Ma , Gerald Yin
发明人： Yan Ye , Diana Xiaobing Ma , Gerald Yin
IPC分类号： C23F100
CPC分类号： H01L21/32131 , C23F4/00 , Y10T428/12229 , Y10T428/12528 , Y10T428/12771 , Y10T428/12826 , Y10T428/12896
摘要： Copper can be pattern etched at acceptable rates and with selectivity over adjacent materials using an etch process which utilizes a solely physical process which we have termed “enhanced physical bombardment”. Enhanced physical bombardment requires an increase in ion density and/or an increase in ion energy of ionized species which strike the substrate surface. To assist in the removal of excited copper atoms from the surface being etched, the power to the ion generation source and/or the substrate offset bias source may be pulsed. In addition, when the bombarding ions are supplied from a remote source, the supply of these ions may be pulsed. Further, thermal phoresis may be used by maintaining a substrate temperature which is higher than the temperature of a surface in the etch chamber. It is also possible to use a chemically reactive species in combination with the physical ion bombardment without causing copper corrosion problems, so long as the concentration of the chemically reactive ion component is sufficiently low that the etching is carried out in a physical bombardment dominated etch regime.
摘要翻译：铜可以以可接受的速率进行图案蚀刻，并且使用使用仅称为“增强物理轰击”的物理过程的蚀刻工艺对相邻材料具有选择性。增强的物理轰击需要离子密度的增加和/或离子化物质的离子能量的增加，这些物质撞击到基底表面。为了帮助从被蚀刻的表面去除激发的铜原子，离子产生源和/或衬底偏置偏置源的功率可以是脉冲的。此外，当从远程源供应轰击离子时，这些离子的供应可以是脉冲的。此外，可以通过保持高于蚀刻室中的表面的温度的衬底温度来使用热电泳。只要化学反应离子组分的浓度足够低以致蚀刻在物理轰击主导的蚀刻状态下进行，也可以将化学反应物质与物理离子轰击结合使用而不引起铜腐蚀问题。

10. 发明授权

US5968847A Process for copper etch back 失效
公开(公告)号：US5968847A
公开(公告)日：1999-10-19
申请号：US42146
申请日：1998-03-13
申请人： Yan Ye , Diana Xiaobing Ma
发明人： Yan Ye , Diana Xiaobing Ma
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/768 , H01L21/00 , B44C1/22
CPC分类号： C23F4/00 , H01L21/32136 , H01L21/76838 , H01L21/7684
摘要： In the preparation of semiconductor structures having multilevel copper conductive features which must be interconnected, it is frequently desired to remove portions of a copper layer deposited over a substrate. In particular, where lines and contacts are created by depositing a copper layer to fill trenches and vias present in a dielectric layer, it is desired to remove the portion of the copper layer which does not form the desired line or contact. The present invention provides a method of etching a copper layer (film) to remove the portion of the film which is not part of the desired conductive interconnect structure, while avoiding over etching of the structure and the formation of corrosive surface contaminants on the surface of the etched copper. The method of etching is referred to as the etchback process, since, in a typical fabrication process, the deposited copper layer is etched back to the upper or "field" surface of a substrate containing trenches and vias which are filled by the copper. The copper layer etchback may be conducted on a substrate surface using a low temperature regime, below about 150.degree. C. Within this low temperature regime, the etchback is preferably conducted using essentially physical bombardment of the copper surface. Or, the etchback may be carried out with the substrate surface at a temperature which falls within a high temperature regime, above about 150.degree. C. Within this high temperature regime, three different etch chemistries may be used. The etch plasma may be formed solely from non-reactive gases; the etch plasma may be formed solely from gases which are produce a reactive species (such as a gas which is a source of chlorine or fluorine), or, the etch plasma may be formed from a combination of non-reactive and reactive gases which are tailored to adjust selectivity and etch rate. When the gas is a source of chlorine or fluorine, it is preferred that the gas be a compound comprising at least one other element in combination with chlorine or fluorine.

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