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1. 发明申请

US20090203297A1 Semiconductor Wafer, Apparatus and Process For Producing The Semiconductor Wafer 失效
标题翻译：半导体晶片，用于生产半导体晶片的器件和工艺
公开(公告)号：US20090203297A1
公开(公告)日：2009-08-13
申请号：US11941171
申请日：2007-11-16
申请人： Georg Pietsch , Michael Kerstan , Werner Blaha
发明人： Georg Pietsch , Michael Kerstan , Werner Blaha
IPC分类号： B24B7/17 , H01L21/302 , B24B1/00
CPC分类号： H01L21/02013 , B24B7/17 , B24B7/228 , B24D7/14
摘要： The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.
摘要翻译：本发明涉及通过半导体晶片的双面研磨制造半导体晶片的方法，其中半导体晶片在两侧同时研磨，首先通过粗磨，然后使用研磨工具进行精磨。在粗磨和精磨之间的半导体晶片保持定位在研磨机中，并且研磨工具在从粗磨到精磨过渡期间继续施加基本恒定的载荷。本发明还涉及一种用于在2mm×2mm面积的测量窗口和在测量窗口中小于40nm的小于16nm的前表面上具有局部平坦度值的半导体晶片的实施方法和半导体晶片 10毫米×10毫米的面积。

2. 发明授权

US07867059B2 Semiconductor wafer, apparatus and process for producing the semiconductor wafer 失效
标题翻译：用于制造半导体晶片的半导体晶片，装置和工艺
公开(公告)号：US07867059B2
公开(公告)日：2011-01-11
申请号：US11941171
申请日：2007-11-16
申请人： Georg Pietsch , Michael Kerstan , Werner Blaha
发明人： Georg Pietsch , Michael Kerstan , Werner Blaha
IPC分类号： B24B49/00
CPC分类号： H01L21/02013 , B24B7/17 , B24B7/228 , B24D7/14
摘要： The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.
摘要翻译：本发明涉及通过半导体晶片的双面研磨制造半导体晶片的方法，其中半导体晶片在两侧同时研磨，首先通过粗磨，然后使用研磨工具进行精磨。在粗磨和精磨之间的半导体晶片保持定位在研磨机中，并且研磨工具在从粗磨到精磨过渡期间继续施加基本恒定的载荷。本发明还涉及一种用于在2mm×2mm面积的测量窗口中在小于16nm的前表面上具有局部平坦度值并且小于40nm的半导体晶片的半导体晶片测量窗口为10mm×10 mm面积。

3. 发明申请

US20050173377A1 Semiconductor wafer, apparatus and process for producing the semiconductor wafer 审中-公开
标题翻译：用于制造半导体晶片的半导体晶片，装置和工艺
公开(公告)号：US20050173377A1
公开(公告)日：2005-08-11
申请号：US11051894
申请日：2005-02-04
申请人： Georg Pietsch , Michael Kerstan , Werner Blaha
发明人： Georg Pietsch , Michael Kerstan , Werner Blaha
IPC分类号： B24B7/04 , B24B7/17 , B24B7/22 , B24D7/14 , H01L21/302 , H01L21/304
CPC分类号： H01L21/02013 , B24B7/17 , B24B7/228 , B24D7/14
摘要： The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.
摘要翻译：本发明涉及通过半导体晶片的双面研磨制造半导体晶片的方法，其中半导体晶片在两侧同时研磨，首先通过粗磨，然后使用研磨工具进行精磨。在粗磨和精磨之间的半导体晶片保持定位在研磨机中，并且研磨工具在从粗磨到精磨过渡期间继续施加基本恒定的载荷。本发明还涉及一种用于在2mm×2mm面积的测量窗口和在测量窗口中小于40nm的小于16nm的前表面上具有局部平坦度值的半导体晶片的实施方法和半导体晶片 10毫米×10毫米的面积。

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