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1. 发明申请

US20050272621A1 Composition and method for removing copper-compatible resist 有权
公开(公告)号：US20050272621A1
公开(公告)日：2005-12-08
申请号：US11185856
申请日：2005-07-21
申请人： Geo-Sung Chae , Yong-Sup Hwang , Cyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Byung-Uk Kim , Sang-Dai Lee , Jong-Soon Yoo
发明人： Geo-Sung Chae , Yong-Sup Hwang , Cyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Byung-Uk Kim , Sang-Dai Lee , Jong-Soon Yoo
IPC分类号： C23F1/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D11/00 , G03F7/42 , C11D1/00
CPC分类号： C11D11/0047 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D7/3281 , C11D7/5013 , G03F7/425 , Y10S134/902
摘要： A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

2. 发明授权

US07662763B2 Composition and method for removing copper-compatible resist 有权
标题翻译：去除铜兼容抗蚀剂的组成和方法
公开(公告)号：US07662763B2
公开(公告)日：2010-02-16
申请号：US11185856
申请日：2005-07-21
申请人： Gee-Sung Chae , Yong-Sup Hwang , Cyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Byung-Uk Kim , Sang-Dai Lee , Jong-Soon Yoo
发明人： Gee-Sung Chae , Yong-Sup Hwang , Cyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Byung-Uk Kim , Sang-Dai Lee , Jong-Soon Yoo
IPC分类号： C11D7/50
CPC分类号： C11D11/0047 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D7/3281 , C11D7/5013 , G03F7/425 , Y10S134/902
摘要： A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.
摘要翻译：用于除去铜相容抗蚀剂的组合物包括约10％至约30％重量的胺化合物，约10％至约80％重量的乙二醇醚化合物和约10％至约80％重量的极性溶剂。

3. 发明授权

US06958312B2 Composition and method for removing copper-compatible resist 有权
标题翻译：去除铜兼容抗蚀剂的组成和方法
公开(公告)号：US06958312B2
公开(公告)日：2005-10-25
申请号：US10267047
申请日：2002-10-09
申请人： Gee-Sung Chae , Yong-Sup Hwang , Cyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Byung-Uk Kim , Sang-Dai Lee , Jong-Soon Yoo
发明人： Gee-Sung Chae , Yong-Sup Hwang , Cyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Byung-Uk Kim , Sang-Dai Lee , Jong-Soon Yoo
IPC分类号： C23F1/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D11/00 , G03F7/42
CPC分类号： C11D11/0047 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D7/3281 , C11D7/5013 , G03F7/425 , Y10S134/902
摘要： A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.
摘要翻译：用于除去铜相容抗蚀剂的组合物包括约10％至约30％重量的胺化合物，约10％至约80％重量的乙二醇醚化合物和约10％至约80％重量的极性溶剂。

4. 发明授权

US06183942B2 Thinner composition for removing spin-on-glass and photoresist 有权
标题翻译：用于去除旋涂玻璃和光致抗蚀剂的较薄组合物
公开(公告)号：US06183942B2
公开(公告)日：2001-02-06
申请号：US09429535
申请日：1999-10-28
申请人： Byung-Uk Kim , Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
发明人： Byung-Uk Kim , Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
IPC分类号： G03F742
CPC分类号： G03F7/422 , G03F7/168
摘要： The present invention relates to a thinner composition for removing a spin-on-glass coating and a photoresist which are used in the semiconductor components manufacturing process. The present invention provides a mixed thinner composition which is mixed propylene glycol monoalkyl ether with monooxycarbonic acid ester, alkyl ethanoate, and alkyl lactate in a thinner composition for cleaning and photoresist removal applications in the semiconductor components manufacturing process. A thinner composition according to the present invention has the beneficial effects that the production yield can be improved during semiconductor component manufacturing since when the thinner composition is applied after the spin coating process, the undesired coating of the edge or the backside of the substrate can be removed promptly, completely, and effectively, and residual materials adhering to the surface of a substrate which must be reuse can be completely removed so that the substrate can be economically used.
摘要翻译：本发明涉及用于去除半导体元件制造方法中的旋涂玻璃涂层和光致抗蚀剂的较薄组合物。本发明提供了混合的丙稀二醇单烷基醚与单氧碳酸酯的混合稀释剂组合物，烷基乙酸烷基酯和乳酸烷基酯用于半导体组件制造方法中的清洁和光致抗蚀剂去除应用的较薄组合物。根据本发明的较薄组合物具有在半导体部件制造期间可以提高生产产量的有益效果，因为当薄膜组合物在旋转涂布过程之后施加，可以迅速，完全和有效地去除衬底的边缘或背面的不期望的涂层，并且可以完全去除粘附到必须重新使用的衬底表面的残留材料，因此基材可以是经济的被使用。

5. 发明授权

US06908892B2 Photoresist remover composition 有权
标题翻译：光刻胶去除剂组成
公开(公告)号：US06908892B2
公开(公告)日：2005-06-21
申请号：US10297646
申请日：2001-06-07
申请人： Suk-Il Yoon , Young-Woong Park , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
发明人： Suk-Il Yoon , Young-Woong Park , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
IPC分类号： G03F7/42 , H01L21/027 , C11D7/32 , C11D7/50
CPC分类号： G03F7/425
摘要： The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2˜20 weight % of water-soluble hydroxylamine, 5˜15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30˜55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride. In addition, during removing process of photoresist, the photoresist remover composition can minimize the corrosion of lower metal film, in particular, the new metallic layers which is adopted to a production line of 64 MDRAM or more-VLSL
摘要翻译：本发明是为了在诸如大规模集成电路和大规模集成电路的半导体器件的制造过程中去除光致抗蚀剂而使用的光致抗蚀剂去除剂组合物。本发明包含2〜20重量％的水溶性羟胺，5〜15重量％的含2或3个羟基的肟化合物和30〜55重量％的烷基酰胺。根据本发明的光致抗蚀剂去除剂组合物可以容易且快速地除去通过硬烘烤，干蚀刻和灰化过程固化的光致抗蚀剂层和由下金属膜制备的侧壁光致抗蚀剂聚合物，通过在这些过程中光刻胶与蚀刻和灰化气体的反应。特别地，光刻胶去除剂组合物具有除去由铝，铝合金和氮化钛层生产的侧壁光致抗蚀剂聚合物的良好性能。此外，在光致抗蚀剂的除去过程中，光致抗蚀剂去除剂组合物可以最小化下金属膜的腐蚀，特别是在生产线上采用的64MDRAM或更高VLSL的新金属层

6. 发明授权

US06683034B1 Stripper composition for negative chemically amplified resist 失效
标题翻译：用于负化学放大抗蚀剂的剥离剂组合物
公开(公告)号：US06683034B1
公开(公告)日：2004-01-27
申请号：US10019607
申请日：2001-12-28
申请人： Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
发明人： Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
IPC分类号： C11D122
CPC分类号： C11D3/18 , C11D1/72 , C11D3/34 , G03F7/426
摘要： The present invention relates to a nonaqueous stripper composition for negative chemically amplified resists which shows excellent removing capabilities, has anticorrosive effects on varieties of metallic substrate plates such as Al, W, TiN, WSi, SiON, SiNx, HTO, etc., improves productivity since it can be recycled as a nonaqueous stripper even after many applications, and is suitable in electronic material fields in which high precision processing is required in the negative chemically amplified resist removing process. The present invention provides a stripper composition for negative chemically amplified resists comprising a) 20 to 35 weight % of straight chained alkylbenzenesulfonic acid; b) 10 to 34 weight % of light aromatic naphtha solvent; c) 30 to 45 weight % of organic compounds containing chlorine; d) 15 to 25 weight % of hydroxybenzenes; and e) 0.5 to 5 weight % of polyoxyethylene octylphenylether derivatives, in order to accomplish the above objects.
摘要翻译：本发明涉及一种显示出优异的除去能力的负性化学增幅抗蚀剂的非水性剥离剂组合物，对诸如Al，W，TiN，WSi，SiON，SiNx，HTO等的金属基板的各种品种具有防腐蚀效果，提高了生产率因为即使在许多应用之后它也可以作为非水性剥离剂再循环，并且适用于负性化学放大抗蚀剂去除工艺中需要高精度加工的电子材料领域。本发明提供了用于负化学放大抗蚀剂的剥离剂组合物，其包含a）20至35重量％的直链烷基苯磺酸; b）10〜34重量％的轻芳烃石脑油溶剂; c）30至45重量％的含氯有机化合物; d）15至25重量％的羟基苯; 和e）0.5至5重量％的聚氧乙烯辛基苯基醚衍生物，以实现上述目的。

7. 发明授权

US06579668B1 Photoresist remover composition 失效
标题翻译：光刻胶去除剂组成
公开(公告)号：US06579668B1
公开(公告)日：2003-06-17
申请号：US10069243
申请日：2002-02-15
申请人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： A photoresist remover composition including: 10 to 30% by weight amine compound; 20 to 60% by weight glycol series solvent; 20 to 60% by weight polar solvent; and 0.01 to 3% by weight perfluoroalkylethyleneoxide. The performance of the photoresist remover composition in stripping the photoresist residue, which is generated by dry or wet etching, ashing or ion implantation, from a substrate is enhance, and the photoresist remover composition is able to be smoothly applied over a variety of metal layers including an aluminum (Al) layer. Also, the photoresist remover composition corrodes the metal layers very little.
摘要翻译：一种光致抗蚀剂去除剂组合物，其包含：10至30重量％的胺化合物; 20〜60重量％乙二醇系列溶剂; 20〜60重量％极性溶剂; 和0.01〜3重量％的全氟烷基氧化乙烯。光致抗蚀剂去除剂组合物在从基材上进行干蚀刻或湿法蚀刻，灰化或离子注入产生的光致抗蚀剂残余物的性能得到提高，并且光刻胶去除剂组合物能够平滑地施加在各种金属层上包括铝（Al）层。此外，光致抗蚀剂去除剂组合物非常少地腐蚀金属层。

8. 发明授权

US6140027A Photoresist remover composition 有权
标题翻译：光刻胶去除剂组成
公开(公告)号：US6140027A
公开(公告)日：2000-10-31
申请号：US435569
申请日：1999-11-08
申请人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
IPC分类号： G03F7/32 , G03F7/42 , H01L21/311
CPC分类号： H01L21/02063 , G03F7/425 , G03F7/426 , H01L21/31133
摘要： A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10.about.40 wt % of water-soluble amine compound; 20.about.50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10.about.30 wt % of water; 0.1.about.10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1.about.10 wt % of triazole compound; and 0.01.about.1 wt % of silicone surfactant. Therefore, the photoresist remover composition can easily remove, at a low temperature and in a short time, a photoresist layer which has been cured during hard baking, dry etching, ashing and/or ion-implantation processes, and the potoresist layer cross-linked by a metallic contaminants shed from a lower metal layer during these processes. Also, corrosion of the lower metal pattern during the photoresist removal process can be minimized.
摘要翻译：用于在诸如集成电路（IC），大规模集成电路（LSI）或超大规模集成电路（VLSI）的半导体器件的制造期间去除光致抗蚀剂的光刻胶去除剂组合物。光刻胶去除剂组合物包含10重量％的水溶性胺化合物; 20重量％至少一种选自二甲基亚砜（DMSO），N-甲基吡咯烷酮（NMP），二甲基乙酰胺（DMAc），二甲基甲酰胺（DMF）和二甲基酰亚胺唑烷酮（DMI））的水溶性极性有机溶剂; 10分差30％的水; 0.1差异10重量％的含有两个或多个羟基的有机酚化合物; 0.1差异10重量％的三唑化合物; 和0.01％的有机硅表面活性剂。因此，光刻胶去除剂组合物可以在低温和短时间内容易地在硬烘烤，干蚀刻，灰化和/或离子注入工艺中固化的光致抗蚀剂层和交联的光致抗蚀剂层在这些过程中，金属污染物从下层金属层脱落。而且，光致抗蚀剂去除过程中的下金属图案的腐蚀可以被最小化。

9. 发明授权

US06774097B2 Resist stripper composition 有权
标题翻译：抗剥离组合物
公开(公告)号：US06774097B2
公开(公告)日：2004-08-10
申请号：US10258823
申请日：2002-10-25
申请人： Suk-Il Yoon , Young-Woong Park , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
发明人： Suk-Il Yoon , Young-Woong Park , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
IPC分类号： G03C1112
CPC分类号： G03F7/425
摘要： The present invention relates to a resist stripper composition that is used to remove resists during semiconductor device manufacturing processes such as for large size integrated circuits, very large size integrated circuits, etc. The resist stripper composition comprises 3 to 10 wt % of an organic amine compound, 30 to 60 wt % of a solvent selected from a group consisting of DCMAc, DMF, DMI, NMP, etc., 30 to 60 wt % of water, 1 to 10 wt % of catechol, resorcin or a mixture thereof and 1 to 10 wt % of a C4-6 straight polyhydric alcohol.
摘要翻译：本发明涉及一种抗蚀剂剥离剂组合物，其用于在诸如用于大尺寸集成电路，超大尺寸集成电路等的半导体器件制造过程中除去抗蚀剂。抗蚀剂剥离剂组合物包含3至10重量％的有机胺化合物，30〜60重量％的选自DCMAc，DMF，DMI，NMP等的溶剂，30〜60重量％的水，1〜10重量％的儿茶酚，间苯二酚或其混合物，1 至10重量％的C 4-6直链多元醇。

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