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1. 发明授权

US07015183B2 Resist remover composition 有权
标题翻译：抵抗去除剂组成
公开(公告)号：US07015183B2
公开(公告)日：2006-03-21
申请号：US10478113
申请日：2001-05-21
申请人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
IPC分类号： C11D7/32 , C11D7/50
CPC分类号： G03F7/425 , G03F7/426 , Y10S438/906
摘要： The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises (a) 10 to 40 wt. % of a water-soluble organic amine compound, (b) 40 to 70 wt. % of water-soluble organic solvents selected from a group consisting of dimethyl sulfoxide (DMSO), N-methyl pyrrolidone (NMP) dimethylacetamide (DMAc), dimethylformamide (DMF) and a mixture thereof, (c) 10 to 30 wt. % of water, (d) 5 to 15 wt. % of an organic phenol compound containing two or three hydroxyl groups, (e) 0.5 to 5 wt. % of anion type compound containing perfluoroalkyl, and (f) 0.01 to 1 wt. % of a polyoxyethylenealkylamine ether-type surfactant.
摘要翻译：本发明涉及用于在集成电路，大规模集成电路和大规模集成电路等半导体器件的制造工艺中去除抗蚀剂的抗蚀剂去除剂组合物。组合物包含（a）10〜40重量％％的水溶性有机胺化合物，（b）40〜70重量％（DMSO），N-甲基吡咯烷酮（NMP）二甲基乙酰胺（DMAc），二甲基甲酰胺（DMF）及其混合物组成的组中的水溶性有机溶剂的％，（c）10〜30重量％％的水，（d）5〜15wt。％的含有两个或三个羟基的有机酚化合物，（e）0.5-5重量％％的含全氟烷基的阴离子型化合物，和（f）0.01〜1重量％％的聚氧乙烯烷基胺醚型表面活性剂。

2. 发明授权

US06861210B2 Resist remover composition 有权
标题翻译：抵抗去除剂组成
公开(公告)号：US06861210B2
公开(公告)日：2005-03-01
申请号：US10478388
申请日：2001-05-21
申请人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
IPC分类号： G03F7/42 , G03F7/32
CPC分类号： G03F7/425
摘要： The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises a) 10 to 40 wt. % of water-soluble organic amine compound, b) 10 to 60 wt. % of water-soluble polar organic solvent, c) 10 to 30 wt. % of water, and d) 0.1 to 10 wt. % of organic phenol compound containing two or more hydroxyl groups, and it is characterized in that the water-soluble polar organic solvent is 2-hydroxyisobutyric acid methylester (HBM).
摘要翻译：本发明涉及用于在集成电路，大规模集成电路和大规模集成电路等半导体器件的制造工艺中去除抗蚀剂的抗蚀剂去除剂组合物。该组合物包含a）10至40wt。％的水溶性有机胺化合物，b）10〜60重量％％的水溶性极性有机溶剂，c）10〜30wt。％的水，和d）0.1〜10wt。％的含有两个或多个羟基的有机酚化合物，其特征在于水溶性极性有机溶剂是2-羟基异丁酸甲酯（HBM）。

3. 发明授权

US06183942B2 Thinner composition for removing spin-on-glass and photoresist 有权
标题翻译：用于去除旋涂玻璃和光致抗蚀剂的较薄组合物
公开(公告)号：US06183942B2
公开(公告)日：2001-02-06
申请号：US09429535
申请日：1999-10-28
申请人： Byung-Uk Kim , Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
发明人： Byung-Uk Kim , Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
IPC分类号： G03F742
CPC分类号： G03F7/422 , G03F7/168
摘要： The present invention relates to a thinner composition for removing a spin-on-glass coating and a photoresist which are used in the semiconductor components manufacturing process. The present invention provides a mixed thinner composition which is mixed propylene glycol monoalkyl ether with monooxycarbonic acid ester, alkyl ethanoate, and alkyl lactate in a thinner composition for cleaning and photoresist removal applications in the semiconductor components manufacturing process. A thinner composition according to the present invention has the beneficial effects that the production yield can be improved during semiconductor component manufacturing since when the thinner composition is applied after the spin coating process, the undesired coating of the edge or the backside of the substrate can be removed promptly, completely, and effectively, and residual materials adhering to the surface of a substrate which must be reuse can be completely removed so that the substrate can be economically used.
摘要翻译：本发明涉及用于去除半导体元件制造方法中的旋涂玻璃涂层和光致抗蚀剂的较薄组合物。本发明提供了混合的丙稀二醇单烷基醚与单氧碳酸酯的混合稀释剂组合物，烷基乙酸烷基酯和乳酸烷基酯用于半导体组件制造方法中的清洁和光致抗蚀剂去除应用的较薄组合物。根据本发明的较薄组合物具有在半导体部件制造期间可以提高生产产量的有益效果，因为当薄膜组合物在旋转涂布过程之后施加，可以迅速，完全和有效地去除衬底的边缘或背面的不期望的涂层，并且可以完全去除粘附到必须重新使用的衬底表面的残留材料，因此基材可以是经济的被使用。

4. 发明申请

US20050101500A1 Resist remover composition 有权
标题翻译：抵抗去除剂组成
公开(公告)号：US20050101500A1
公开(公告)日：2005-05-12
申请号：US10478113
申请日：2001-05-21
申请人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304 , C11D1/00
CPC分类号： G03F7/425 , G03F7/426 , Y10S438/906
摘要： The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises (a) 10 to 40 wt. % of a water-soluble organic amine compound, (b) 40 to 70 wt. % of water-soluble organic solvents selected from a group consisting of dimethyl sulfoxide (DMSO), N-methyl pyrrolidone (NMP) dimethylacetamide (DMAc), dimethylformamide (DMF) and a mixture thereof, (c) 10 to 30 wt. % of water, (d) 5 to 15 wt. % of an organic phenol compound containing two or three hydroxyl groups, (e) 0.5 to 5 wt. % of anion type compound containing perfluoroalkyl, and (f) 0.01 to 1 wt. % of a polyoxyethylenealkylamine ether-type surfactant.
摘要翻译：本发明涉及用于在集成电路，大规模集成电路和大规模集成电路等半导体器件的制造工艺中去除抗蚀剂的抗蚀剂去除剂组合物。组合物包含（a）10〜40重量％％的水溶性有机胺化合物，（b）40〜70重量％（DMSO），N-甲基吡咯烷酮（NMP）二甲基乙酰胺（DMAc），二甲基甲酰胺（DMF）及其混合物组成的组中的水溶性有机溶剂的％，（c）10〜30重量％％的水，（d）5〜15wt。％的含有两个或三个羟基的有机酚化合物，（e）0.5-5重量％％的含全氟烷基的阴离子型化合物，和（f）0.01〜1重量％％的聚氧乙烯烷基胺醚型表面活性剂。

5. 发明授权

US06579668B1 Photoresist remover composition 失效
标题翻译：光刻胶去除剂组成
公开(公告)号：US06579668B1
公开(公告)日：2003-06-17
申请号：US10069243
申请日：2002-02-15
申请人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： A photoresist remover composition including: 10 to 30% by weight amine compound; 20 to 60% by weight glycol series solvent; 20 to 60% by weight polar solvent; and 0.01 to 3% by weight perfluoroalkylethyleneoxide. The performance of the photoresist remover composition in stripping the photoresist residue, which is generated by dry or wet etching, ashing or ion implantation, from a substrate is enhance, and the photoresist remover composition is able to be smoothly applied over a variety of metal layers including an aluminum (Al) layer. Also, the photoresist remover composition corrodes the metal layers very little.
摘要翻译：一种光致抗蚀剂去除剂组合物，其包含：10至30重量％的胺化合物; 20〜60重量％乙二醇系列溶剂; 20〜60重量％极性溶剂; 和0.01〜3重量％的全氟烷基氧化乙烯。光致抗蚀剂去除剂组合物在从基材上进行干蚀刻或湿法蚀刻，灰化或离子注入产生的光致抗蚀剂残余物的性能得到提高，并且光刻胶去除剂组合物能够平滑地施加在各种金属层上包括铝（Al）层。此外，光致抗蚀剂去除剂组合物非常少地腐蚀金属层。

6. 发明授权

US6140027A Photoresist remover composition 有权
标题翻译：光刻胶去除剂组成
公开(公告)号：US6140027A
公开(公告)日：2000-10-31
申请号：US435569
申请日：1999-11-08
申请人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Sang-Dai Lee , Won-Lae Kim , Chong-Soon Yoo
IPC分类号： G03F7/32 , G03F7/42 , H01L21/311
CPC分类号： H01L21/02063 , G03F7/425 , G03F7/426 , H01L21/31133
摘要： A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10.about.40 wt % of water-soluble amine compound; 20.about.50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10.about.30 wt % of water; 0.1.about.10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1.about.10 wt % of triazole compound; and 0.01.about.1 wt % of silicone surfactant. Therefore, the photoresist remover composition can easily remove, at a low temperature and in a short time, a photoresist layer which has been cured during hard baking, dry etching, ashing and/or ion-implantation processes, and the potoresist layer cross-linked by a metallic contaminants shed from a lower metal layer during these processes. Also, corrosion of the lower metal pattern during the photoresist removal process can be minimized.
摘要翻译：用于在诸如集成电路（IC），大规模集成电路（LSI）或超大规模集成电路（VLSI）的半导体器件的制造期间去除光致抗蚀剂的光刻胶去除剂组合物。光刻胶去除剂组合物包含10重量％的水溶性胺化合物; 20重量％至少一种选自二甲基亚砜（DMSO），N-甲基吡咯烷酮（NMP），二甲基乙酰胺（DMAc），二甲基甲酰胺（DMF）和二甲基酰亚胺唑烷酮（DMI））的水溶性极性有机溶剂; 10分差30％的水; 0.1差异10重量％的含有两个或多个羟基的有机酚化合物; 0.1差异10重量％的三唑化合物; 和0.01％的有机硅表面活性剂。因此，光刻胶去除剂组合物可以在低温和短时间内容易地在硬烘烤，干蚀刻，灰化和/或离子注入工艺中固化的光致抗蚀剂层和交联的光致抗蚀剂层在这些过程中，金属污染物从下层金属层脱落。而且，光致抗蚀剂去除过程中的下金属图案的腐蚀可以被最小化。

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