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    • 1. 发明授权
    • Inverse visible spectrum light and broad spectrum light source for enhanced vision
    • 反射可见光谱光和广谱光源,增强视力
    • US09551468B2
    • 2017-01-24
    • US14262794
    • 2014-04-27
    • Gary W. Jones
    • Gary W. Jones
    • F21K9/64H01L33/50H01L25/075F21Y101/00
    • F21K9/64F21Y2101/00F21Y2115/10H01L25/0753H01L33/504H01L33/507H01L2924/0002H01L2924/00
    • A visible light spectrum and light source apparatus are described that provide over 90% of their total radiant power within the 385 nm-530 nm and the 570 nm-820 nm spectral ranges, collectively. The objective of the light spectrum and apparatus is to improve the visibility and shape of a wider range of objects than is practical using conventional LED white light sources at similar radiant power conditions. The new light source can provide good Scotopic or Mesopic at low power levels compared to most other light sources for illumination. One illustrative embodiment of this new spectrum and light source provides a full visible light spectrum with at least 6% of the highest peak radiant power of all wavelengths between 405 nm-730 nm, and another illustrative embodiment provides a similar full spectrum between 440 nm and 730 nm. In both embodiments, the average radiant power in the 475-510 nm cyan spectral region is at least 2-times the average radiant power in the 530-570 nm spectral region.
    • 描述了一种可见光谱和光源装置,它们共同地在385nm-530nm和570nm-820nm光谱范围内提供其总辐射功率的90%以上。 光谱和设备的目的是提高在相似辐射功率条件下使用常规LED白光源的实际应用中更广范围物体的可见性和形状。 与大多数其他光源相比,新的光源可以在低功率水平下提供良好的Scotopic或Mesopic。 这种新的光谱和光源的一个说明性实施例提供具有至少6%的405nm-730nm之间的所有波长的最高峰值辐射功率的全可见光谱,另一个说明性实施例提供了在440nm和 730nm。 在两个实施例中,475-510nm青色光谱区域中的平均辐射功率至少是530-570nm光谱区域中平均辐射功率的2倍。
    • 2. 发明申请
    • INVERSE VISIBLE SPECTRUM LIGHT AND BROAD SPECTRUM LIGHT SOURCE FOR ENHANCED VISION
    • 反向可见光谱和宽光谱光源用于增强视觉
    • US20150162505A1
    • 2015-06-11
    • US14262794
    • 2014-04-27
    • Gary W. Jones
    • Gary W. Jones
    • H01L33/50
    • F21K9/64F21Y2101/00F21Y2115/10H01L25/0753H01L33/504H01L33/507H01L2924/0002H01L2924/00
    • A visible light spectrum and light source apparatus are described that provide over 90% of their total radiant power within the 385 nm-530 nm and the 570 nm-820 nm spectral ranges, collectively. The objective of the light spectrum and apparatus is to improve the visibility and shape of a wider range of objects than is practical using conventional LED white light sources at similar radiant power conditions. The new light source can provide good Scotopic or Mesopic at low power levels compared to most other light sources for illumination. One illustrative embodiment of this new spectrum and light source provides a full visible light spectrum with at least 6% of the highest peak radiant power of all wavelengths between 405 nm-730 nm, and another illustrative embodiment provides a similar full spectrum between 440 nm and 730 nm. In both embodiments, the average radiant power in the 475-510 nm cyan spectral region is at least 2-times the average radiant power in the 530-570 nm spectral region.
    • 描述了一种可见光谱和光源装置,它们共同地在385nm-530nm和570nm-820nm光谱范围内提供其总辐射功率的90%以上。 光谱和设备的目的是提高在相似辐射功率条件下使用常规LED白光源的实际应用中更广范围物体的可见性和形状。 与大多数其他光源相比,新的光源可以在低功率水平下提供良好的Scotopic或Mesopic。 这种新的光谱和光源的一个说明性实施例提供具有至少6%的405nm-730nm之间的所有波长的最高峰值辐射功率的全可见光谱,另一个说明性实施例提供了在440nm和 730nm。 在两个实施例中,475-510nm青色光谱区域中的平均辐射功率至少是530-570nm光谱区域中平均辐射功率的2倍。
    • 5. 发明授权
    • High performance field emitter and method of producing the same
    • 高性能场致发射体及其制造方法
    • US6144145A
    • 2000-11-07
    • US73340
    • 1998-05-06
    • Gary W. JonesSteven M. Zimmerman
    • Gary W. JonesSteven M. Zimmerman
    • H01J1/304H01J1/30
    • H01J1/3042H01J2201/30446H01J2201/319
    • A high performance novel electron emitter material for use in field emission devices is disclosed. The high performance electron emitter material of the invention may comprise a high Cr and SiO mixture. This material may be formed into high aspect ratio, low work function tips which maintain their shape, thus minimizing flash over risks and electron scattering problems, while at the same time permitting a high level of fabrication process flexibility, and minimizing film stresses. One or more impurities which are conductive oxides or will form conductive oxides may be added to the Cr--SiO composition so that a net low work function emitter may be maintained under oxidation. A class of semi-conductive and conductive metal oxides comprises another embodiment of the invention. These materials include oxides of Cr, Mo, Ni, Fe, and Sc, which have current emitting properties desirable for applications where improved electron emission infirmity is desired among emitters within a pixel. Emission from these more resistive emitter tip materials may be optionally enhanced with the addition of low work function impurities such as alkali metals enabling more stable devices while still permitting low turn-on voltages. Methods of making the emitter are also disclosed.
    • 公开了一种用于场致发射器件的高性能新型电子发射体材料。 本发明的高性能电子发射体材料可以包括高Cr和SiO混合物。 该材料可以形成为高纵横比,低功函数尖端,保持其形状,从而使风险和电子散射问题的闪现最小化,同时允许高水平的制造工艺灵活性,并最小化薄膜应力。 可以将一种或多种作为导电氧化物或将形成导电氧化物的杂质添加到Cr-SiO组合物中,使得可以在净氧化下保持净低功函数发射极。 一类半导体和导电金属氧化物包括本发明的另一个实施方案。 这些材料包括Cr,Mo,Ni,Fe和Sc的氧化物,其对于在像素内的发射体中期望改善的电子发射弱化的应用具有期望的电流发射特性。 可以通过添加低功函杂质例如碱金属来增加这些更电阻的发射极尖端材料的发射,从而使得能够实现更稳定的器件同时仍然允许低导通电压。 还公开了制造发射极的方法。
    • 7. 发明授权
    • Method of making microstructural surgical instruments
    • 制作微结构外科手术器械的方法
    • US5619889A
    • 1997-04-15
    • US321089
    • 1994-10-11
    • Gary W. JonesSteven M. Zimmerman
    • Gary W. JonesSteven M. Zimmerman
    • A61F9/013B23P15/40B24B1/04B24B3/36B24B3/58
    • B24B1/04A61F9/0133B23P15/40B24B3/36B24B3/58
    • A method of making a microstructural shaped article from a high hardness substrate workpiece, in which an energy-transmissive shaping member is secured in energy-transmissive relationship to an energy source, and the substrate workpiece is positioned in alignment therewith. A fine grain slurry of solid particles is provided between the energy-transmissive shaping member and the substrate, and the substrate workpiece is milled by the energy-transmissive shaping member in compressive bearing relationship to the substrate through the fine grain slurry of solid particles, for sufficient time to form the desired shape in the substrate workpiece. A reusable, tribologically enhanced die is also described, for use in the method of the invention. The energy source may be an electroacoustic energy source or an electric power energy source. The non-etched microstructural articles of the invention include knives, saws, and other instruments useful for ocular and other surgical applications.
    • 从高硬度基板工件制造微结构成形制品的方法,其中能量传递成形构件以与能量源的能量传递关系固定,并且衬底工件被定位成与其对准。 在能量传递成形构件和基板之间设置有细颗粒的固体颗粒,并且通过固体颗粒的细颗粒浆料与基板压缩承载关系的能量传递成形构件将基板工件研磨, 足够的时间在基板工件中形成所需的形状。 还描述了可重复使用的摩擦增强的模具,用于本发明的方法。 能量源可以是电声能量源或电力能量源。 本发明的未蚀刻的微结构制品包括可用于眼部和其它手术应用的刀,锯和其它器械。
    • 9. 发明授权
    • Vertical microelectronic field emission devices including elongate
vertical pillars having resistive bottom portions
    • 垂直微电子场发射装置,包括具有电阻底部的细长垂直柱
    • US5371431A
    • 1994-12-06
    • US846281
    • 1992-03-04
    • Gary W. JonesChing-Tzong Sune
    • Gary W. JonesChing-Tzong Sune
    • H01J1/304H01J9/02H01J29/04H01J29/87H01J31/12H01J1/30
    • H01J3/021H01J1/3042H01J9/025H01J2201/319
    • A vertical microelectronic field emitter includes a conductive top portion and a resistive bottom portion in an elongated column which extends vertically from a horizontal substrate. An emitter electrode may be formed at the base of the column, and an extraction electrode may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.
    • 垂直微电子场发射器包括从水平衬底垂直延伸的细长柱中的导电顶部部分和电阻底部部分。 发射电极可以形成在柱的底部,并且可以在柱的顶部附近形成引出电极。 细长柱减小微电子场发射器的寄生电容,以提供高速操作,同时提供均匀的柱对列电阻。 场发射器可以通过在衬底的表面上首先形成尖端然后在衬底周围形成尖端的沟槽形成衬底中的柱,其中尖端位于柱的顶部。 沟槽填充有电介质,并且在电介质上形成导体层。 或者,可以在衬底的表面形成沟槽,其中沟槽限定在衬底中的列。 然后,尖端形成在列的顶部。 沟槽用电介质填充,并且导体层形成在电介质上以形成提取电极。