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1. 发明申请

US20050266682A1 Methods and apparatus for forming barrier layers in high aspect ratio vias 审中-公开
公开(公告)号：US20050266682A1
公开(公告)日：2005-12-01
申请号：US11185248
申请日：2005-07-19
申请人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C14/02 , C23C14/04 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/44 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

2. 发明申请

US20060057843A1 Methods and apparatus for forming barrier layers in high aspect ratio vias 失效
公开(公告)号：US20060057843A1
公开(公告)日：2006-03-16
申请号：US11264517
申请日：2005-11-01
申请人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

3. 发明授权

US07547644B2 Methods and apparatus for forming barrier layers in high aspect ratio vias 失效
标题翻译：在高纵横比通孔中形成阻挡层的方法和装置
公开(公告)号：US07547644B2
公开(公告)日：2009-06-16
申请号：US11264517
申请日：2005-11-01
申请人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.
摘要翻译：在第一方面，提供了一种方法，其包括（1）在原子层沉积（ALD）室内使用原子层沉积在通孔的侧壁和底部上形成第一阻挡层; （2）通过溅射蚀刻从所述通孔的底部去除所述第一阻挡层的至少一部分; 和（3）在ALD室内的通孔的侧壁和底部上沉积第二阻挡层。提供了许多其它实施例，以及根据这些和其它方面的系统，方法和计算机程序产品。

4. 发明授权

US06784096B2 Methods and apparatus for forming barrier layers in high aspect ratio vias 失效
公开(公告)号：US06784096B2
公开(公告)日：2004-08-31
申请号：US10241373
申请日：2002-09-11
申请人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： H01L214763
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

5. 发明授权

US06974771B2 Methods and apparatus for forming barrier layers in high aspect ratio vias 有权
标题翻译：在高纵横比通孔中形成阻挡层的方法和装置
公开(公告)号：US06974771B2
公开(公告)日：2005-12-13
申请号：US10894774
申请日：2004-07-20
申请人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C14/02 , C23C14/04 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/44 , H01L21/768 , C23C16/00 , H01L21/302 , H01L21/461 , H01L21/4763
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.
摘要翻译：在第一方面，提供了一种方法，其包括（1）在原子层沉积（ALD）室内使用原子层沉积在通孔的侧壁和底部上形成第一阻挡层; （2）通过溅射蚀刻从所述通孔的底部去除所述第一阻挡层的至少一部分; 和（3）在ALD室内的通孔的侧壁和底部上沉积第二阻挡层。提供了许多其它实施例，以及根据这些和其它方面的系统，方法和计算机程序产品。

6. 发明授权

US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08696875B2
公开(公告)日：2014-04-15
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述腔室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

7. 发明申请

US20070241458A1 Metal / metal nitride barrier layer for semiconductor device applications 失效
标题翻译：用于半导体器件应用的金属/金属氮化物阻挡层
公开(公告)号：US20070241458A1
公开(公告)日：2007-10-18
申请号：US11809153
申请日：2007-05-30
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： H01L23/48
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要翻译：用于半导体器件应用的金属/金属氮化物阻挡层。阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

8. 发明申请

US20050056536A1 Multi-step magnetron sputtering process 有权
标题翻译：多级磁控溅射工艺
公开(公告)号：US20050056536A1
公开(公告)日：2005-03-17
申请号：US10934231
申请日：2004-09-03
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

9. 发明授权

US06277249B1 Integrated process for copper via filling using a magnetron and target producing highly energetic ions 失效
标题翻译：通过使用磁控管进行填充的铜的集成工艺和产生高能离子的靶
公开(公告)号：US06277249B1
公开(公告)日：2001-08-21
申请号：US09518180
申请日：2000-03-02
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形槽。位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场，密度等离子体从槽的顶部延伸到底部。大的等离子体体积增加了溅射的金属原子将被电离的可能性。磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

10. 发明授权

US06485618B2 Integrated copper fill process 有权
标题翻译：综合铜填充工艺
公开(公告)号：US06485618B2
公开(公告)日：2002-11-26
申请号：US09917985
申请日：2001-07-30
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1434
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

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