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1. 发明授权

US08143087B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08143087B2
公开(公告)日：2012-03-27
申请号：US12977213
申请日：2010-12-23
申请人： Fumito Isaka , Sho Kato , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

2. 发明授权

US07985604B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US07985604B2
公开(公告)日：2011-07-26
申请号：US12324065
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/077 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. A second single crystal semiconductor layer is formed by epitaxially growing a semiconductor layer on the first single crystal semiconductor layer in accordance with a plasma CVD method in which a silane based gas and hydrogen with a flow rate 50 times or more that of the silane gas are used as a source gas. A second impurity semiconductor layer which has a conductivity type opposite to that of the first impurity semiconductor layer is formed over the second single crystal semiconductor layer. A second electrode is formed over the second impurity semiconductor layer.
摘要翻译：提供具有优异的光电转换特性的光电转换装置，同时有效地利用有限的资源。在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在第一杂质半导体层，第一电极和绝缘层上形成有脆性层单晶半导体衬底。在将绝缘层粘合到支撑基板上之后，将单晶半导体基板与用作分离平面的易碎层或其附近分离，从而在支撑基板上形成第一单晶半导体层。第二单晶半导体层是通过以等离子体CVD法在第一单晶半导体层上外延生长半导体层而形成的，其中硅烷气体和氢气的流量为硅烷气体的50倍以上用作源气体。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

3. 发明授权

US07858431B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US07858431B2
公开(公告)日：2010-12-28
申请号：US12324220
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

4. 发明申请

US20090142908A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：US20090142908A1
公开(公告)日：2009-06-04
申请号：US12324065
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
IPC分类号： H01L21/203 , H01L21/36
CPC分类号： H01L31/1804 , H01L31/077 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. A second single crystal semiconductor layer is formed by epitaxially growing a semiconductor layer on the first single crystal semiconductor layer in accordance with a plasma CVD method in which a silane based gas and hydrogen with a flow rate 50 times or more that of the silane gas are used as a source gas. A second impurity semiconductor layer which has a conductivity type opposite to that of the first impurity semiconductor layer is formed over the second single crystal semiconductor layer. A second electrode is formed over the second impurity semiconductor layer.
摘要翻译：提供具有优异的光电转换特性的光电转换装置，同时有效地利用有限的资源。在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在第一杂质半导体层，第一电极和绝缘层上形成有脆性层单晶半导体衬底。在将绝缘层粘合到支撑基板上之后，将单晶半导体基板与用作分离平面的易碎层或其附近分离，从而在支撑基板上形成第一单晶半导体层。第二单晶半导体层是通过以等离子体CVD法在第一单晶半导体层上外延生长半导体层而形成的，其中硅烷气体和氢气的流量为硅烷气体的50倍以上用作源气体。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

5. 发明申请

US20090142879A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：US20090142879A1
公开(公告)日：2009-06-04
申请号：US12324220
申请日：2008-11-26
申请人： Fumito ISAKA , Sho Kato , Koji Dairiki
发明人： Fumito ISAKA , Sho Kato , Koji Dairiki
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

6. 发明授权

US08507313B2 Method of manufacturing photoelectric conversion device 失效
标题翻译：制造光电转换装置的方法
公开(公告)号：US08507313B2
公开(公告)日：2013-08-13
申请号：US13426655
申请日：2012-03-22
申请人： Fumito Isaka , Sho Kato , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

7. 发明授权

US07767547B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07767547B2
公开(公告)日：2010-08-03
申请号：US12360419
申请日：2009-01-27
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

8. 发明授权

US08048754B2 Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer 有权
标题翻译：制造SOI衬底的方法和制造单晶半导体层的方法
公开(公告)号：US08048754B2
公开(公告)日：2011-11-01
申请号：US12564973
申请日：2009-09-23
申请人： Akihisa Shimomura , Fumito Isaka , Sho Kato , Takashi Hirose
发明人： Akihisa Shimomura , Fumito Isaka , Sho Kato , Takashi Hirose
IPC分类号： H01L21/8222 , H01L21/331
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/0262 , Y02E10/547
摘要： An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.
摘要翻译：本发明的目的是提供具有非常有利特性的单晶半导体层，而不需要在高温下进行CMP处理或热处理。此外，目的在于提供具有上述单晶半导体层的半导体衬底（或SOI衬底）。在衬底上的第二单晶半导体层的表面上，通过气相外延生长法形成第一单晶半导体层; 第一单晶半导体层和基底基板之间具有绝缘层彼此接合; 并且第一单晶半导体层和第二单晶半导体层在它们之间的界面处彼此分离，以便在绝缘层之间提供第一单晶半导体层，其中绝缘层位于基底衬底上。因此，可以制造SOI衬底。

9. 发明授权

US07947523B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US07947523B2
公开(公告)日：2011-05-24
申请号：US12424827
申请日：2009-04-16
申请人： Sho Kato , Satoshi Toriumi , Fumito Isaka
发明人： Sho Kato , Satoshi Toriumi , Fumito Isaka
IPC分类号： H01L21/00
CPC分类号： H01L31/1896 , H01L31/0201 , H01L31/042 , H01L31/072 , H01L31/075 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/1872 , H02S40/34 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An embrittlement layer is formed in the single crystal semiconductor substrate and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on one surface of the single crystal semiconductor substrate. After attaching the insulating layer and a supporting substrate to each other to bond the single crystal semiconductor substrate and the supporting substrate, the single crystal semiconductor substrate is separated along the embrittlement layer to form a stack including a first single crystal semiconductor layer. A first semiconductor layer and a second semiconductor layer are formed over the first single crystal semiconductor layer. A second single crystal semiconductor layer is formed by solid phase growth. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer is formed on the second single crystal semiconductor layer. A second electrode is formed on the second impurity semiconductor layer.
摘要翻译：在单晶半导体衬底中形成脆化层，并且在单晶半导体衬底的一个表面上形成第一杂质半导体层，第一电极和绝缘层。在将绝缘层和支撑基板彼此连接以结合单晶半导体衬底和支撑衬底之后，单晶半导体衬底沿着脆化层分离以形成包括第一单晶半导体层的堆叠。第一半导体层和第二半导体层形成在第一单晶半导体层上。通过固相生长形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

10. 发明授权

US08017429B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08017429B2
公开(公告)日：2011-09-13
申请号：US12369760
申请日：2009-02-12
申请人： Fumito Isaka , Sho Kato , Junpei Momo
发明人： Fumito Isaka , Sho Kato , Junpei Momo
IPC分类号： H01L21/30 , H01L21/301
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1892 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
摘要翻译：目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。以下列方式获得单晶硅层：在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

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