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1. 发明授权

US08048754B2 Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer 有权
标题翻译：制造SOI衬底的方法和制造单晶半导体层的方法
公开(公告)号：US08048754B2
公开(公告)日：2011-11-01
申请号：US12564973
申请日：2009-09-23
申请人： Akihisa Shimomura , Fumito Isaka , Sho Kato , Takashi Hirose
发明人： Akihisa Shimomura , Fumito Isaka , Sho Kato , Takashi Hirose
IPC分类号： H01L21/8222 , H01L21/331
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/0262 , Y02E10/547
摘要： An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.
摘要翻译：本发明的目的是提供具有非常有利特性的单晶半导体层，而不需要在高温下进行CMP处理或热处理。此外，目的在于提供具有上述单晶半导体层的半导体衬底（或SOI衬底）。在衬底上的第二单晶半导体层的表面上，通过气相外延生长法形成第一单晶半导体层; 第一单晶半导体层和基底基板之间具有绝缘层彼此接合; 并且第一单晶半导体层和第二单晶半导体层在它们之间的界面处彼此分离，以便在绝缘层之间提供第一单晶半导体层，其中绝缘层位于基底衬底上。因此，可以制造SOI衬底。

2. 发明授权

US07767547B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07767547B2
公开(公告)日：2010-08-03
申请号：US12360419
申请日：2009-01-27
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

3. 发明授权

US08043935B2 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device 有权
标题翻译：半导体基板的制造方法及半导体装置的制造方法
公开(公告)号：US08043935B2
公开(公告)日：2011-10-25
申请号：US12621541
申请日：2009-11-19
申请人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L31/028 , H01L31/075 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
摘要翻译：本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。此外，另一个目的是提高半导体衬底的生产率。通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离两层。因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

4. 发明授权

US07939426B2 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07939426B2
公开(公告)日：2011-05-10
申请号：US12844856
申请日：2010-07-28
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要翻译：通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

5. 发明授权

US07842584B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07842584B2
公开(公告)日：2010-11-30
申请号：US12339413
申请日：2008-12-19
申请人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
发明人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
IPC分类号： H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

6. 发明授权

US08420504B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08420504B2
公开(公告)日：2013-04-16
申请号：US12942156
申请日：2010-11-09
申请人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
发明人： Sho Kato , Fumito Isaka , Tetsuya Kakehata , Hiromichi Godo , Akihisa Shimomura
IPC分类号： H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

7. 发明授权

US07781308B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07781308B2
公开(公告)日：2010-08-24
申请号：US12277352
申请日：2008-11-25
申请人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
摘要翻译：在第一单晶半导体膜上形成第二单晶半导体膜; 通过向第二单晶半导体膜中添加离子形成分离层; 用作接合层的第二绝缘膜形成在第二单晶半导体膜上; 使第一SOI衬底的表面和第二衬底的表面彼此面对，使得第二绝缘膜的表面和第二衬底的表面彼此接合; 然后进行热处理以在分离层处引起裂纹，从而形成第二SOI衬底，其中第二单晶半导体膜的一部分设置在第二衬底上，其间插入第二绝缘膜。

8. 发明申请

US20090142908A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：US20090142908A1
公开(公告)日：2009-06-04
申请号：US12324065
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
IPC分类号： H01L21/203 , H01L21/36
CPC分类号： H01L31/1804 , H01L31/077 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. A second single crystal semiconductor layer is formed by epitaxially growing a semiconductor layer on the first single crystal semiconductor layer in accordance with a plasma CVD method in which a silane based gas and hydrogen with a flow rate 50 times or more that of the silane gas are used as a source gas. A second impurity semiconductor layer which has a conductivity type opposite to that of the first impurity semiconductor layer is formed over the second single crystal semiconductor layer. A second electrode is formed over the second impurity semiconductor layer.
摘要翻译：提供具有优异的光电转换特性的光电转换装置，同时有效地利用有限的资源。在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在第一杂质半导体层，第一电极和绝缘层上形成有脆性层单晶半导体衬底。在将绝缘层粘合到支撑基板上之后，将单晶半导体基板与用作分离平面的易碎层或其附近分离，从而在支撑基板上形成第一单晶半导体层。第二单晶半导体层是通过以等离子体CVD法在第一单晶半导体层上外延生长半导体层而形成的，其中硅烷气体和氢气的流量为硅烷气体的50倍以上用作源气体。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

9. 发明申请

US20090142904A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090142904A1
公开(公告)日：2009-06-04
申请号：US12277352
申请日：2008-11-25
申请人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
摘要翻译：在第一单晶半导体膜上形成第二单晶半导体膜; 通过向第二单晶半导体膜中添加离子形成分离层; 用作接合层的第二绝缘膜形成在第二单晶半导体膜上; 使第一SOI衬底的表面和第二衬底的表面彼此面对，使得第二绝缘膜的表面和第二衬底的表面彼此接合; 然后进行热处理以在分离层处引起裂纹，从而形成第二SOI衬底，其中第二单晶半导体膜的一部分设置在第二衬底上，其间插入第二绝缘膜。

10. 发明授权

US07985604B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US07985604B2
公开(公告)日：2011-07-26
申请号：US12324065
申请日：2008-11-26
申请人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
发明人： Fumito Isaka , Sho Kato , Kosei Nei , Ryu Komatsu , Akihisa Shimomura , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/077 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. A second single crystal semiconductor layer is formed by epitaxially growing a semiconductor layer on the first single crystal semiconductor layer in accordance with a plasma CVD method in which a silane based gas and hydrogen with a flow rate 50 times or more that of the silane gas are used as a source gas. A second impurity semiconductor layer which has a conductivity type opposite to that of the first impurity semiconductor layer is formed over the second single crystal semiconductor layer. A second electrode is formed over the second impurity semiconductor layer.
摘要翻译：提供具有优异的光电转换特性的光电转换装置，同时有效地利用有限的资源。在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在第一杂质半导体层，第一电极和绝缘层上形成有脆性层单晶半导体衬底。在将绝缘层粘合到支撑基板上之后，将单晶半导体基板与用作分离平面的易碎层或其附近分离，从而在支撑基板上形成第一单晶半导体层。第二单晶半导体层是通过以等离子体CVD法在第一单晶半导体层上外延生长半导体层而形成的，其中硅烷气体和氢气的流量为硅烷气体的50倍以上用作源气体。在第二单晶半导体层上形成具有与第一杂质半导体层相反的导电类型的第二杂质半导体层。在第二杂质半导体层上形成第二电极。

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