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1. 发明授权

US5467444A Method of three-dimensional display of object-oriented figure information and system thereof 失效
标题翻译：面向对象图形信息的三维显示方法及其系统
公开(公告)号：US5467444A
公开(公告)日：1995-11-14
申请号：US789005
申请日：1991-11-07
申请人： Fumio Kawamura , Shigeru Shimada , Tsutomu Ikeda
发明人： Fumio Kawamura , Shigeru Shimada , Tsutomu Ikeda
IPC分类号： G06T15/20 , G06T17/00 , G06F15/50
CPC分类号： G06T17/00 , G06T15/20
摘要： In a system for displaying map information, an object base storage unit stores an object base relating to relational objects, a map data base storage unit stores a map data base relating to figure elements of map data, and an attribute data base storage unit stores an attribute data base relating to attribute data related to the figure elements of the map data. In response to an input command, a head one of the relational objects is retrieved from the object base, and entity objects are desired from a head relational object by referring to the object base, so that each of the desired entity objects is processed. The map data retrieving section retrieves the map data from the map data base in response to the processing of each map data entity object of the derived entity objects, and the attribute data retrieving section retrieves the attribute data from the attribute data base in response to the execution of each of attribute data entity objects of the derived entity objects. The converting section converts the map data and attribute data into three-dimensional display data and the display data is three-dimensionally displayed on the display unit. In this case, predetermined height data for the attribute of each figure element of the map data is stored in a table in advance. The height data is obtained by referring to the table in accordance with the attribute data, and the map data is converted into three-dimensional map data based on the obtained height data.
摘要翻译：在用于显示地图信息的系统中，对象库存储单元存储与关系对象有关的对象库，地图数据库存储单元存储与地图数据的图形元素有关的地图数据库，属性数据库存储单元存储与与地图数据的图形元素有关的属性数据相关的属性数据库。响应于输入命令，从对象库检索关系对象中的头一个，并且通过参考对象库从头部关系对象期望实体对象，从而处理每个所需的实体对象。响应于导出的实体对象的每个地图数据实体对象的处理，地图数据检索部分从地图数据库检索地图数据，并且属性数据检索部分响应于属性数据库从属性数据库中检索属性数据执行派生实体对象的每个属性数据实体对象。转换部分将地图数据和属性数据转换为三维显示数据，并且在显示单元上三维地显示显示数据。在这种情况下，地图数据的每个图形元素的属性的预定高度数据被预先存储在表中。根据属性数据参照该表获得高度数据，并且基于获得的高度数据将地图数据转换为三维地图数据。

2. 发明授权

US5448696A Map information system capable of displaying layout information 失效
标题翻译：能够显示布局信息的地图信息系统
公开(公告)号：US5448696A
公开(公告)日：1995-09-05
申请号：US173469
申请日：1993-12-27
申请人： Shigeru Shimada , Fumio Kawamura , Kazuyuki Suzuki , Nobuyuki Chikada , Shirou Takei
发明人： Shigeru Shimada , Fumio Kawamura , Kazuyuki Suzuki , Nobuyuki Chikada , Shirou Takei
IPC分类号： G06T17/05 , G06T11/60
CPC分类号： G06T17/05
摘要： A method for displaying information and system includes the steps of displacing map data on the screen of a display unit, displaying layout data representing one or more segments of a certain floor in each of the one or more structure elements of the map data displayed on a first designated portion, on a second designated portion of the screen in response to a layout display instruction, and displaying attribute data corresponding to each of the one or more segments of the floor.
摘要翻译：一种用于显示信息和系统的方法包括以下步骤：在显示单元的屏幕上移动地图数据，显示表示在一个或多个显示单元上显示的地图数据的一个或多个结构元素中的每一个中的特定楼层的一个或多个段的布局数据第一指定部分，响应于布局显示指令在屏幕的第二指定部分上，并且显示对应于楼层的一个或多个段中的每一个的属性数据。

3. 发明授权

US08084281B2 Semiconductor substrate, electronic device, optical device, and production methods therefor 有权
标题翻译：半导体衬底，电子器件，光学器件及其制造方法
公开(公告)号：US08084281B2
公开(公告)日：2011-12-27
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/00
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

4. 发明授权

US07794539B2 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby 失效
标题翻译：生产III族元素氮化物晶体的方法，其中使用的制造装置以及由此制造的半导体元件
公开(公告)号：US07794539B2
公开(公告)日：2010-09-14
申请号：US10599501
申请日：2005-03-31
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Yasuhito Takahashi
IPC分类号： C30B9/00 , C30B30/04 , C30B28/06 , C30B11/00
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.
摘要翻译：一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件被提供。该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。

5. 发明申请

US20090013924A1 PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL 有权
标题翻译：生产硝酸单晶的工艺和设备
公开(公告)号：US20090013924A1
公开(公告)日：2009-01-15
申请号：US12212722
申请日：2008-09-18
申请人： Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/02 , B01J3/04
CPC分类号： C30B9/00 , C30B29/403 , C30B35/00 , Y10T117/1096
摘要： A nitride single crystal is produced using a growth solution 7 containing an easily oxidizable material. A crucible 1 for storing the growth solution 7, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber 14, 15 disposed inside the pressure vessel and outside the crucible 1 are used to grow the nitride single crystal.
摘要翻译：使用含有容易氧化的材料的生长溶液7制造氮化物单晶。用于储存生长溶液7的坩埚1，用于储存坩埚的压力容器和至少含有氮气的装置以及设置在压力容器内部和坩埚外部的氧吸收器14,15用于使氮化物单体水晶。

6. 发明申请

US20080283968A1 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 有权
标题翻译： III-氮化物半导体晶体及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20080283968A1
公开(公告)日：2008-11-20
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： H01L29/20 , C03B9/00
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

7. 发明申请

US20080213158A1 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
标题翻译：用于生产III族元素氮化物晶体的装置和用于生产III族元素氮化物晶体的方法
公开(公告)号：US20080213158A1
公开(公告)日：2008-09-04
申请号：US12082745
申请日：2008-04-14
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B23/00 , C01B21/06
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.
摘要翻译：提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。例如，使用本发明的装置如下生长晶体。将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部反应堆容器。由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以被阻止此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。结果，可以提高获得的III族氮化物晶体的质量。

8. 发明申请

US20080022921A1 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
标题翻译：第III族氮化物晶体及其制造方法，III族氮化物晶体基板和半导体器件
公开(公告)号：US20080022921A1
公开(公告)日：2008-01-31
申请号：US11628253
申请日：2005-04-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B29/38 , C30B11/06 , C30B9/10 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

9. 发明申请

US20080011224A1 METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEXAGONAL BORON NITRIDE SINGLE CRYSTAL 有权
标题翻译：生产六角形硼酸单晶和六面体硼砂单晶的方法
公开(公告)号：US20080011224A1
公开(公告)日：2008-01-17
申请号：US11837557
申请日：2007-08-13
申请人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
发明人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
IPC分类号： C30B29/38 , C30B1/00 , C30B23/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12
摘要： An object of the present invention is to provide a novel method of growing hexagonal boron nitride single crystal. It is found that hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and calcium series material in atmosphere containing nitrogen. Bulk of hexagonal boron nitride single crystal can thereby successfully be grown.
摘要翻译：本发明的目的是提供一种生长六方氮化硼单晶的新方法。发现六方氮化硼单晶通过在含氮气氛中加热或加热然后缓慢冷却氮化硼和钙系列材料而在氮化钙焊剂中生长。从而能够成功生长六方晶系氮化硼单晶体。

10. 发明申请

US20080008642A1 Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby 审中-公开
标题翻译：由此获得的氮化铝结晶和氮化铝晶体的制造方法
公开(公告)号：US20080008642A1
公开(公告)日：2008-01-10
申请号：US11661013
申请日：2005-08-24
申请人： Yusuke Mori , Takatamo Sasaki , Fumio Kawamura , Yoshimura Masashi , Minoru Kawahara , Hiroaki Isobe
发明人： Yusuke Mori , Takatamo Sasaki , Fumio Kawamura , Yoshimura Masashi , Minoru Kawahara , Hiroaki Isobe
IPC分类号： C01B21/072 , C30B29/38 , C30B9/10
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： The present invention provides a method for producing aluminum nitride crystals under mild pressure and temperature conditions. In the production method of aluminum nitride crystals, aluminum nitride crystals are formed and grown in the presence of nitrogen-containing gas by allowing aluminum and the nitrogen to react with each other in a flux containing the following component (A) and component (B), or a flux containing the following component (B). (A) At least one element selected from the group consisting of the alkali metal and the alkaline-earth metal. (B) At least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
摘要翻译：本发明提供了在温和的压力和温度条件下制备氮化铝晶体的方法。在氮化铝晶体的制造方法中，通过使含有以下成分（A）和成分（B）的助熔剂中的铝和氮彼此反应，在含氮气体的存在下，形成氮化铝晶体，，或含有以下组分（B）的助熔剂。（A）选自由碱金属和碱土金属组成的组中的至少一种元素。（B）选自锡（Sn），镓（Ga），铟（In），铋（Bi）和汞（Hg）中的至少一种元素。

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