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1. 发明授权

US06483357B2 Semiconductor device reduced in through current 失效
标题翻译：半导体器件通过电流减小
公开(公告)号：US06483357B2
公开(公告)日：2002-11-19
申请号：US09811578
申请日：2001-03-20
申请人： Hiroshi Kato , Fukashi Morishita
发明人： Hiroshi Kato , Fukashi Morishita
IPC分类号： H03L700
CPC分类号： G05F1/465
摘要： A sense signal IVOFF is generated by a power supply level sense circuit with an external power supply potential Ext.Vcc1 as the operating power supply potential to sense the level of an external power supply potential Ext.Vcc2. By suppressing generation of an internal power supply potential or fixing the internal node by the sense signal IVOFF, the through current at the time of power on can be reduced.
摘要翻译：感测信号IVOFF由电源电平检测电路产生，外部电源电位Ext.Vcc1作为工作电源电位，用于感测外部电源电位Ext.Vcc2的电平。通过抑制内部电源电位的产生或通过感测信号IVOFF固定内部节点，可以减少上电时的通过电流。

2. 发明授权

US07157773B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07157773B2
公开(公告)日：2007-01-02
申请号：US10330093
申请日：2002-12-30
申请人： Hiroshi Kato , Shigehiro Kuge , Hideyuki Noda , Fukashi Morishita , Shuichi Ueno
发明人： Hiroshi Kato , Shigehiro Kuge , Hideyuki Noda , Fukashi Morishita , Shuichi Ueno
IPC分类号： H01L27/01
CPC分类号： H01L29/78648 , H01L21/28282 , H01L29/792
摘要： A memory cell of a nonvolatile semiconductor memory device is formed on a silicon layer formed on a silicon substrate through an ONO film. The memory cell has a source region and a drain region formed in the silicon layer, an ONO film and a gate electrode. The ONO film and the ONO film include nitride films having charge trap parts trapping charges.
摘要翻译：非易失性半导体存储器件的存储单元通过ONO膜形成在硅衬底上形成的硅层上。存储单元具有在硅层中形成的源区和漏区，ONO膜和栅电极。 ONO膜和ONO膜包括具有捕获电荷的电荷陷阱部分的氮化物膜。

3. 发明授权

US06819619B2 Semiconductor memory device allowing reduction of an area loss 失效
标题翻译：半导体存储器件允许减少面积损耗
公开(公告)号：US06819619B2
公开(公告)日：2004-11-16
申请号：US10356560
申请日：2003-02-03
申请人： Fukashi Morishita , Hiroshi Kato
发明人： Fukashi Morishita , Hiroshi Kato
IPC分类号： G11C514
CPC分类号： G11C11/4074 , G11C5/145 , G11C5/147 , G11C2207/104
摘要： A semiconductor memory device includes a memory cell array, a data bus, a reference voltage generating circuit, a voltage down converter, a VPP generating circuit, a circuit group, and a test circuit. The reference voltage generating circuit, voltage down converter, and VPP generating circuit include thick film transistors having a gate oxide film thickness suitable to a power supply voltage of 3.3 V. Circuits included in the circuit group include thin film transistors having a gate oxide film thickness suitable to a power supply voltage of 1.5 V. The reference voltage generating circuit, voltage down converter, and VPP generating circuit including the thick film transistors are arranged to form units corresponding to the position of the memory cell array.
摘要翻译：半导体存储器件包括存储单元阵列，数据总线，参考电压产生电路，降压转换器，VPP生成电路，电路组和测试电路。参考电压产生电路，降压转换器和VPP产生电路包括具有适合于3.3V的电源电压的栅极氧化膜厚度的厚膜晶体管。电路组中包括的电路包括具有栅氧化物膜厚度适合于1.5V的电源电压。包括厚膜晶体管的参考电压产生电路，降压转换器和VPP产生电路被布置成形成与存储单元阵列的位置对应的单元。

4. 发明申请

US20100231768A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20100231768A1
公开(公告)日：2010-09-16
申请号：US12722121
申请日：2010-03-11
申请人： Hiroto Utsunomiya , Katsumi Dosaka , Hiroshi Kato , Fukashi Morishita , Fumiyasu Sasaki
发明人： Hiroto Utsunomiya , Katsumi Dosaka , Hiroshi Kato , Fukashi Morishita , Fumiyasu Sasaki
IPC分类号： H04N5/335
CPC分类号： H04N5/37455 , H03M1/1205 , H03M1/144 , H03M1/403 , H03M1/66 , H03M2201/16 , H04N5/374 , H04N5/3742 , H04N5/3765 , H04N5/378
摘要： There is provided a solid-state image pickup device including ADCs that can be arranged in a limited space. The potential of a pixel signal outputted through a vertical readout line is held at a node. A plurality of capacitors are capacitively coupled to the node at which the pixel signal is held. The potential of the node is decreased in a stepwise manner by sequentially switching the voltages of the counter electrodes of the capacitors by the control of transistors. A comparator compares the potential of the node with the potential of the dark state of the pixel, and determines the upper bits of a digital value when the potential of the node becomes lower than the potential of the dark state. Following this, the conversion of the lower bits of the digital value is started. Therefore, it is possible to simplify the configuration of each ADC and arrange each ADC in a limited space.
摘要翻译：提供了包括可以在有限空间中布置的ADC的固态图像拾取装置。通过垂直读出线输出的像素信号的电位被保持在节点处。多个电容器电容耦合到保持像素信号的节点。通过晶体管的控制，通过依次切换电容器对置电极的电压，逐步降低节点的电位。比较器将节点的电位与像素的暗状态的电位进行比较，并且当节点的电位变得低于黑暗状态的电位时，确定数字值的高位。此后，开始数字值的低位的转换。因此，可以简化每个ADC的配置，并将每个ADC排列在有限的空间内。

5. 发明授权

US08736732B2 Analog to digital converter for solid-state image pickup device 有权
标题翻译：用于固态摄像装置的模数转换器
公开(公告)号：US08736732B2
公开(公告)日：2014-05-27
申请号：US12722121
申请日：2010-03-11
申请人： Hiroto Utsunomiya , Katsumi Dosaka , Hiroshi Kato , Fukashi Morishita , Fumiyasu Sasaki
发明人： Hiroto Utsunomiya , Katsumi Dosaka , Hiroshi Kato , Fukashi Morishita , Fumiyasu Sasaki
IPC分类号： H04N5/335
CPC分类号： H04N5/37455 , H03M1/1205 , H03M1/144 , H03M1/403 , H03M1/66 , H03M2201/16 , H04N5/374 , H04N5/3742 , H04N5/3765 , H04N5/378
摘要： There is provided a solid-state image pickup device including ADCs that can be arranged in a limited space. The potential of a pixel signal outputted through a vertical readout line is held at a node. A plurality of capacitors are capacitively coupled to the node at which the pixel signal is held. The potential of the node is decreased in a stepwise manner by sequentially switching the voltages of the counter electrodes of the capacitors by the control of transistors. A comparator compares the potential of the node with the potential of the dark state of the pixel, and determines the upper bits of a digital value when the potential of the node becomes lower than the potential of the dark state. Following this, the conversion of the lower bits of the digital value is started. Therefore, it is possible to simplify the configuration of each ADC and arrange each ADC in a limited space.
摘要翻译：提供了包括可以在有限空间中布置的ADC的固态图像拾取装置。通过垂直读出线输出的像素信号的电位被保持在节点处。多个电容器电容耦合到保持像素信号的节点。通过晶体管的控制，通过依次切换电容器对置电极的电压，逐步降低节点的电位。比较器将节点的电位与像素的暗状态的电位进行比较，并且当节点的电位变得低于黑暗状态的电位时，确定数字值的高位。此后，开始数字值的低位的转换。因此，可以简化每个ADC的配置，并将每个ADC排列在有限的空间内。

6. 发明授权

US10544425B2 Plant having increased resistance or susceptibility to 4-HPPD inhibitor 有权
公开(公告)号：US10544425B2
公开(公告)日：2020-01-28
申请号：US13976526
申请日：2011-12-26
申请人： Hiroshi Kato , Hideo Maeda , Yoshihiro Sunohara , Ikuo Ando , Masahiro Oshima , Motoshige Kawata , Hitoshi Yoshida , Sakiko Hirose , Makiko Kawagishi , Yojiro Taniguchi , Kazumasa Murata , Hiroaki Maeda , Yuji Yamada , Keisuke Sekino , Akihiko Yamazaki
发明人： Hiroshi Kato , Hideo Maeda , Yoshihiro Sunohara , Ikuo Ando , Masahiro Oshima , Motoshige Kawata , Hitoshi Yoshida , Sakiko Hirose , Makiko Kawagishi , Yojiro Taniguchi , Kazumasa Murata , Hiroaki Maeda , Yuji Yamada , Keisuke Sekino , Akihiko Yamazaki
IPC分类号： C12N15/82 , C12Q1/6895
摘要： By a QTL analysis and so forth using 4-HPPD inhibitor-susceptible rice and 4-HPPD inhibitor-resistant rice, a hypothetical gene (HIS1 gene) of an iron/ascorbate-dependent oxidoreductase gene located on a short arm of chromosome 2 of rice has been identified as a 4-HPPD inhibitor-resistance gene. Further, it has also been revealed that a homologous gene (HSL1 gene) of the HIS1 gene is located on chromosome 6 of rice. Furthermore, it has been found out that utilizations of these genes make it possible to efficiently produce a plant having increased resistance or susceptibility to a 4-HPPD inhibitor and to efficiently determine whether a plant has resistance or susceptibility to a 4-HPPD inhibitor.

7. 发明授权

US09749785B2 Information providing system and information providing method 有权
公开(公告)号：US09749785B2
公开(公告)日：2017-08-29
申请号：US15066825
申请日：2016-03-10
申请人： Tatsuo Nishimura , Hiroshi Kato
发明人： Tatsuo Nishimura , Hiroshi Kato
IPC分类号： G06K19/00 , H04W4/02 , H04W4/04
CPC分类号： H04W4/02 , H04W4/04
摘要： A portable terminal obtains a first code used to obtain provision information and a second code, different from the first code, from a communication device. The portable terminal transmits the first and second codes to an information processing device, receives the provision information from the information processing device as a response to the transmission, and outputs the received provision information. The information processing device includes a first storage unit storing the first code and a second storage unit storing, by associating, the second code and the provision information. The information processing device receives the first and second codes from the portable terminal, obtains provision information associated with the received second code from the second storage unit when the received first code is stored in the first storage unit, and transmits the obtained provision information to the portable terminal. The first code is deleted in exiting from a specific area.

8. 发明授权

US09385020B2 Substrate holding and rotating device, substrate treatment apparatus including the device, and substrate treatment method 有权
标题翻译：基板保持和旋转装置，包括该装置的基板处理装置和基板处理方法
公开(公告)号：US09385020B2
公开(公告)日：2016-07-05
申请号：US13596848
申请日：2012-08-28
申请人： Hiroshi Kato
发明人： Hiroshi Kato
IPC分类号： H01L21/67 , H01L21/687
CPC分类号： H01L21/68728 , H01L21/68792
摘要： A substrate holding and rotating device includes: a turntable rotatable; a rotative drive unit which rotates the turntable; a holding member which is provided on the turntable and horizontally holds a substrate in upwardly spaced relation to the turntable; a vertically movable protection disk disposed between the turntable and a substrate holding position; and a magnetic levitation mechanism including a first magnet attached to the protection disk, an annular second magnet which generates a repulsive force with respect to the first magnet, a support member which non-rotatably supports the second magnet, and a relative movement mechanism which moves the support member and the turntable relative to each other.
摘要翻译：基板保持旋转装置包括：转盘，旋转驱动单元，其使转盘旋转; 保持构件，其设置在转台上并水平地保持与转台成向上间隔开的基板; 设置在所述转盘和基板保持位置之间的可垂直移动的保护盘; 以及磁悬浮机构，其包括附接到保护盘的第一磁体，相对于第一磁体产生排斥力的环形第二磁体，不可旋转地支撑第二磁体的支撑部件，以及相对移动机构，其移动支撑构件和转台相对于彼此。

9. 发明授权

US09223193B2 Projection type display apparatus and method of cooling light source 有权
标题翻译：投影式显示装置及冷却光源的方法
公开(公告)号：US09223193B2
公开(公告)日：2015-12-29
申请号：US13813404
申请日：2010-08-02
申请人： Hiroshi Kato
发明人： Hiroshi Kato
IPC分类号： G03B21/16 , G03B21/20
CPC分类号： G03B21/16 , G03B21/2033
摘要： There is provided a projection-type display apparatus which solves the problem that when an amount of electric power applied to light sources is adjusted, the amount of electric power involved in the cooling of LEDs becomes greater than necessary. Coolers (107R, 107G, 107B) cool light sources (103R, 103G, 103B). Light sensor (111) detects the brightness of a surrounding area. Light case temperature detectors (112R, 112G, 112B) detect case temperatures which are the temperatures of cases of light sources (103R, 103G, 103B). Light source forward voltage detectors (113R, 113G, 113B) detect forward voltages of light sources (103R, 103G, 103B). Light source forward current detectors (114R, 114G, 114B) detect forward currents of light sources (103R, 103G, 103B). Adjuster (117) adjusts the amount of cooling power of coolers (107R, 107G, 107B) based on the forward voltage, the forward current, and the case temperatures.
摘要翻译：提供一种投影型显示装置，其解决了当调整施加到光源的电力的量时，LED的冷却所涉及的电力的量变得大于必要的问题。冷却器（107R，107G，107B）冷却光源（103R，103G，103B）。光传感器（111）检测周围区域的亮度。光箱温度检测器（112R，112G，112B）检测作为光源（103R，103G，103B）的情况的温度的外壳温度。光源正向电压检测器（113R，113G，113B）检测光源（103R，103G，103B）的正向电压。光源正向电流检测器（114R，114G，114B）检测光源（103R，103G，103B）的正向电流。调节器（117）根据正向电压，正向电流和外壳温度调节冷却器（107R，107G，107B）的冷却功率。

10. 发明授权

US09000202B2 Method for producing inorganic oxide particles 有权
标题翻译：无机氧化物粒子的制造方法
公开(公告)号：US09000202B2
公开(公告)日：2015-04-07
申请号：US13579798
申请日：2011-02-18
申请人： Takayuki Maehara , Tadaharu Komatsubara , Yuya Yamano , Kenichi Ishizu , Makoto Sato , Hiroaki Taira , Hiroshi Kato
发明人： Takayuki Maehara , Tadaharu Komatsubara , Yuya Yamano , Kenichi Ishizu , Makoto Sato , Hiroaki Taira , Hiroshi Kato
IPC分类号： C07F7/02 , C01B33/146 , C01B13/36 , C01B33/18
CPC分类号： C01B33/146 , C01B13/36 , C01B13/363 , C01B33/141 , C01B33/148 , C01B33/154 , C01B33/18 , C01G23/04 , C01G25/02 , C01P2004/52 , C01P2004/62 , C01P2004/64 , C07F7/08 , C07F7/10 , C09C1/3081
摘要： The present invention relates to a method for producing inorganic oxide particles, comprising at least the following steps of: coagulating a dispersion obtained by carrying out the hydrolysis reaction and the polycodensation reaction of a metal alkoxide in the presence of a basic catalyst; filtering the dispersion to obtain particles; and drying the particles, wherein the step of coagulating the dispersion is carried out by adding a coagulant comprising at least one compound selected from the group consisting of carbon dioxide, ammonium carbonate, ammonium hydrogen carbonate and ammonium carbamate to the dispersion. The inorganic oxide particles obtained by the method of the present invention have high purity and are excellent in flowability.
摘要翻译：本发明涉及一种无机氧化物粒子的制造方法，其至少包括以下步骤：在碱性催化剂的存在下使通过进行水解反应和金属醇盐的多缩聚反应得到的分散液凝结; 过滤分散体以获得颗粒; 并干燥所述颗粒，其中通过将至少一种选自二氧化碳，碳酸铵，碳酸氢铵和氨基甲酸铵的化合物的凝结剂加入到分散体中来进行凝固分散体的步骤。通过本发明的方法获得的无机氧化物颗粒具有高纯度并且流动性优异。

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