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    • 1. 发明授权
    • Semiconductor elements for semiconductor device
    • 半导体元件半导体元件
    • US06437420B1
    • 2002-08-20
    • US09613227
    • 2000-07-10
    • Freerk Van RijsRonald Dekker
    • Freerk Van RijsRonald Dekker
    • H01L27082
    • H01L23/645H01L2224/02381H01L2224/05001H01L2224/05011H01L2224/05023H01L2224/05085H01L2224/05568H01L2224/16H01L2924/01078H01L2924/01079H01L2924/1305H01L2924/3011H01L2924/00
    • The invention relates to a semiconductor device (100) with a semiconductor body (10) comprising at least one semiconductor element (H) with an active area (A) and a coil (20) coupled to said element (H). The coil (20) and a further coil (21) jointly form a transformer (F). The semiconductor body (10) is secured to a carrier plate (30) which comprises an electrically insulating material and is covered with a conductor track (21). According to the invention, the further coil (21) is positioned on the carrier plate (30) and is formed by the conductor track (21) and electrically separated from the coil (20). In this way, a-device (100) is obtained which is easier to manufacture than the known device. Moreover, the communication between the element (H) and the outside world does not involve an electrical coupling and hence, for example, bonding wires, are not necessary. The invention is particularly advantageous for a (discrete) bipolar transistor, which can suitably be used for surface mounting. The invention further comprises an easy method of manufacturing a device (100) according to the invention.
    • 本发明涉及具有半导体本体(10)的半导体器件(100),该半导体本体(10)包括至少一个具有有源区(A)的半导体元件(H)和耦合到所述元件(H)的线圈(20)。 线圈(20)和另外的线圈(21)共同形成变压器(F)。 半导体本体(10)固定在承载板(30)上,承载板(30)包括电绝缘材料并被导体轨道(21)覆盖。 根据本发明,另外的线圈(21)位于承载板(30)上并且由导体轨道(21)形成并与线圈(20)电隔离。 以这种方式,获得比已知装置更容易制造的装置(100)。 此外,元件(H)和外界之间的连通不涉及电耦合,因此例如不需要接合线。 本发明对于可以适当地用于表面安装的(分立的)双极晶体管是特别有利的。 本发明还包括一种制造根据本发明的装置(100)的简单方法。
    • 2. 发明授权
    • Semiconductor device and method of manufacturing same
    • 半导体装置及其制造方法
    • US06355972B1
    • 2002-03-12
    • US09585826
    • 2000-06-01
    • Freerk Van RijsRonald DekkerDave Michel Henrique Hartskeerl
    • Freerk Van RijsRonald DekkerDave Michel Henrique Hartskeerl
    • H01L2970
    • H01L29/42304H01L23/4824H01L29/41708H01L2924/0002H01L2924/00
    • The invention relates to a semiconductor device comprising a bipolar transistor having a collector (1), a base (2) and an emitter (3) at its active area (A). The semiconductor body (10) of the device is covered with an insulating layer (20). At least a part of a base connection conductor (5) and an emitter connection conductor (6) extend over the insulating layer (20) and lead to a base connection area (8) and an emitter connection area (9), respectively. The known transistor is characterized by poor gain, particularly at high frequencies and at high power. A device according to the invention is characterized in that the emitter connection area (8) and the base connection area (9), viewed in projection, are present on the same side of the active area (A), the emitter connection conductor (6) is divided into two or more sub-conductors (6A, 6B) and the base connection conductor (5) is divided into one or more further sub-conductors (5) which are present between the sub-conductors (6A, 6B) and form a co-planar transmission line (T) therewith. In this way, the inductance of the emitter connection conductor (6) is reduced considerably, resulting in a much higher gain, particularly at high frequencies and high power. Preferably, the semiconductor body (A) is interrupted at the area of the transmission line (T) and is glued to an insulating substrate (40).
    • 本发明涉及一种包括在其有源区(A)上具有集电极(1),基极(2)和发射极(3)的双极晶体管的半导体器件。 该器件的半导体本体(10)被绝缘层(20)覆盖。 基极连接导体(5)和发射极连接导体(6)的至少一部分分别延伸到绝缘层(20)上,并分别导向基极连接区域(8)和发射极连接区域(9)。 已知的晶体管的特征在于增益不良,特别是在高频和高功率下。 根据本发明的装置的特征在于,在投影中观察到的发射极连接区域(8)和基座连接区域(9)存在于有源区域(A)的相同侧,发射极连接导体(6) )分成两个或更多个分导体(6A,6B),并且基极连接导体(5)被分成一个或多个另外的分导体(5),它们分别存在于分导体(6A,6B)和 与其形成共面传输线(T)。 以这种方式,发射极连接导体(6)的电感显着降低,导致高得多的增益,特别是在高频和高功率下。 优选地,半导体本体(A)在传输线(T)的区域处被中断,并且被粘合到绝缘衬底(40)上。
    • 3. 发明授权
    • Semiconductor device and method of manufacturing same
    • 半导体装置及其制造方法
    • US06593628B2
    • 2003-07-15
    • US09819280
    • 2001-03-28
    • Ronald DekkerHenricus Godefridus Rafael MaasJan Willem SlotboomFreerk Van Rijs
    • Ronald DekkerHenricus Godefridus Rafael MaasJan Willem SlotboomFreerk Van Rijs
    • H01L2701
    • H01L27/0825H01L21/8222H01L21/84H01L27/088H01L27/1203
    • The invention relates to an essentially discrete semiconductor device comprising a semiconductor body (10) having a first, preferably bipolar, transistor (T1) with a first region (1) forming a collector (1) of T1, and a second, preferably also bipolar, transistor (T2) with a second region (2) forming a collector (2) of T2, which transistors (T1, T2) are in a cascode configuration wherein the collector (1) of T1is connected to the emitter (4) of T2. Such a device cannot suitably be used in a base station for mobile communication. According to the invention, the first region (1) and the second region (2) are positioned next to each other within a semiconductor region (5), a part of which situated below the first region (1) is provided with a higher doping concentration at the location of T1. In this way, T1 has a low collector-emitter breakdown voltage and a high cutoff frequency, whereas for T2 said voltage and frequency are, respectively, high(er) and low(er). The resultant device is very suitable, on the one hand, for a high voltage application, for example 28 V, and a high power application, for example 100 W and, on the other hand, the device can still operate at a very high speed and hence is very suitable for the above application. Moreover, the device can be manufactured very easily using a method according to the invention. Preferably, the device is rendered suitable for surface mounting, and the semiconductor body is attached to an isolating substrate (20), while the parts thereof that are situated outside T1 and T2 are removed.
    • 本发明涉及一种基本上分立的半导体器件,其包括具有第一优选为双极晶体管(T1)的半导体本体(10),其中第一区域(1)形成为T1的集电极(1),第二区域(1)优选为双极晶体管 ,具有形成T2的集电极(2)的第二区域(2)的晶体管(T2),所述晶体管(T1,T2)处于共源共栅结构,其中T1的集电极(1)连接到T2的发射极(4) 。 这样的设备不能适用于用于移动通信的基站。 根据本发明,第一区域(1)和第二区域(2)在半导体区域(5)内彼此相邻定位,其一部分位于第一区域(1)的下方,具有较高的掺杂 集中在T1的位置。 以这种方式,T1具有低集电极 - 发射极击穿电压和高截止频率,而对于T2,所述电压和频率分别为高(呃)和低(呃)。 一方面,所得到的装置非常适合于高压应用,例如28V,以及高功率应用,例如100W,另一方面,该装置仍然可以以非常高的速度运行 因此非常适合于上述应用。 此外,可以使用根据本发明的方法非常容易地制造该装置。 优选地,该装置适于表面安装,并且半导体主体附接到隔离衬底(20),而位于T1和T2外部的部分被去除。
    • 6. 发明申请
    • CARDIOMYOCYTES-CONTAINING DEVICE AND METHOD FOR MANUFACTURING AND USING THE SAME
    • 含有血小板活性的装置及其制造和使用方法
    • US20120094323A1
    • 2012-04-19
    • US13147607
    • 2010-02-02
    • Ronald DekkerAnja Van De Stolpe
    • Ronald DekkerAnja Van De Stolpe
    • C12Q1/18H01B13/00B05D5/00C12M1/34B05D1/36
    • G01N1/30C12N5/0657C12N2503/02C12N2535/10G01N33/5061
    • Disclosed is a device for determining the cardiotoxicity of a chemical compound, comprising a substrate (10) carrying a deformable stack (34), said stack being partially detached from the substrate by a cavity (32) allowing an out-of-plane deformation of the stack, said stack comprising a first deformable layer (16), a second deformable layer (20) and a multi-electrode structure (18) sandwiched between the first and second deformable layers, the second deformable layer carrying a pattern of cardiomyocytes (28) adhered thereto; and a liquid container (26) mounted on the substrate for exposing the cardiomyocytes to the chemical compound. A method of manufacturing such a device is also disclosed. The present invention further relates to the use of the device for drug target discovery and/or drug development and a method for developing a disease model for a disease that is caused by or modified by stretching of cells, in particular a cardiac disease model.
    • 公开了一种用于确定化合物的心脏毒性的装置,包括承载可变形叠层(34)的基底(10),所述叠层通过空腔(32)部分地与基底分离,允许外部变形 所述堆叠包括夹在所述第一和第二可变形层之间的第一可变形层(16),第二可变形层(20)和多电极结构(18),所述第二可变形层承载心肌细胞图案(28 ) 和安装在基板上的用于将心肌细胞暴露于化合物的液体容器(26)。 还公开了制造这种装置的方法。 本发明还涉及该装置用于药物靶发现和/或药物开发的用途,以及用于开发由细胞拉伸,特别是心脏疾病模型引起或改变的疾病的疾病模型的方法。
    • 10. 发明申请
    • DEFORMABLE INTEGRATED CIRCUIT DEVICE
    • 可变电容集成电路
    • US20100270640A1
    • 2010-10-28
    • US12377673
    • 2007-08-07
    • Ronald DekkerAntoon Marie Henrie TombeurTheodoros Zoumpoulidis
    • Ronald DekkerAntoon Marie Henrie TombeurTheodoros Zoumpoulidis
    • H01L23/52H01L21/98
    • H01L23/49833H01L23/5387H01L2924/0002H01L2924/00
    • An integrated-circuit device is provided, which comprises a rigid substrate island having a main substrate surface with a circuit region circuit elements and at least one fold structure. The fold structure is attached to the substrate island and is unfoldable from a relaxed, folded state to a strained unfolded state. The fold structure contains at least one passive electrical component. The fold structure further has in its folded state at least one surface with an area vector that includes a non-vanishing area-vector component in a direction parallel to the main substrate surface, which area-vector component is diminished or vanishes when deforming the fold structure from the folded into the unfolded state. The fold structure provided by the present invention allows fabricating the integrated-circuit device with small lateral extensions and thus takes up a particularly small amount of chip area, which reduces the cost per device.
    • 提供了一种集成电路器件,其包括具有主衬底表面的刚性衬底岛,其具有电路区域电路元件和至少一个折叠结构。 折叠结构附接到基底岛,并且可以从松弛的折叠状态展开到应变展开状态。 折叠结构包含至少一个无源电组件。 折叠结构在其折叠状态下进一步具有面向向的至少一个表面,该区域向量在平行于主衬底表面的方向上包括非消失的面积 - 矢量分量,该区域 - 矢量分量在折叠变形时减少或消失 结构从折叠到展开状态。 由本发明提供的折叠结构允许制造具有小横向延伸的集成电路器件,因此占据特别小量的芯片面积,这降低了每个器件的成本。