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1. 发明授权

US06355972B1 Semiconductor device and method of manufacturing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06355972B1
公开(公告)日：2002-03-12
申请号：US09585826
申请日：2000-06-01
申请人： Freerk Van Rijs , Ronald Dekker , Dave Michel Henrique Hartskeerl
发明人： Freerk Van Rijs , Ronald Dekker , Dave Michel Henrique Hartskeerl
IPC分类号： H01L2970
CPC分类号： H01L29/42304 , H01L23/4824 , H01L29/41708 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a semiconductor device comprising a bipolar transistor having a collector (1), a base (2) and an emitter (3) at its active area (A). The semiconductor body (10) of the device is covered with an insulating layer (20). At least a part of a base connection conductor (5) and an emitter connection conductor (6) extend over the insulating layer (20) and lead to a base connection area (8) and an emitter connection area (9), respectively. The known transistor is characterized by poor gain, particularly at high frequencies and at high power. A device according to the invention is characterized in that the emitter connection area (8) and the base connection area (9), viewed in projection, are present on the same side of the active area (A), the emitter connection conductor (6) is divided into two or more sub-conductors (6A, 6B) and the base connection conductor (5) is divided into one or more further sub-conductors (5) which are present between the sub-conductors (6A, 6B) and form a co-planar transmission line (T) therewith. In this way, the inductance of the emitter connection conductor (6) is reduced considerably, resulting in a much higher gain, particularly at high frequencies and high power. Preferably, the semiconductor body (A) is interrupted at the area of the transmission line (T) and is glued to an insulating substrate (40).
摘要翻译：本发明涉及一种包括在其有源区（A）上具有集电极（1），基极（2）和发射极（3）的双极晶体管的半导体器件。该器件的半导体本体（10）被绝缘层（20）覆盖。基极连接导体（5）和发射极连接导体（6）的至少一部分分别延伸到绝缘层（20）上，并分别导向基极连接区域（8）和发射极连接区域（9）。已知的晶体管的特征在于增益不良，特别是在高频和高功率下。根据本发明的装置的特征在于，在投影中观察到的发射极连接区域（8）和基座连接区域（9）存在于有源区域（A）的相同侧，发射极连接导体（6））分成两个或更多个分导体（6A，6B），并且基极连接导体（5）被分成一个或多个另外的分导体（5），它们分别存在于分导体（6A，6B）和与其形成共面传输线（T）。以这种方式，发射极连接导体（6）的电感显着降低，导致高得多的增益，特别是在高频和高功率下。优选地，半导体本体（A）在传输线（T）的区域处被中断，并且被粘合到绝缘衬底（40）上。

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