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    • 2. 发明授权
    • Networking method of single frequency network in TD-SCDMA system
    • TD-SCDMA系统单频网络组网方法
    • US08072960B2
    • 2011-12-06
    • US12022984
    • 2008-01-30
    • Yanshan ShiLing LvJingdong LinDatong Chen
    • Yanshan ShiLing LvJingdong LinDatong Chen
    • H04J3/00
    • H04W72/005H04W48/10
    • A networking method of single frequency network in a TD-SCDMA system includes the steps of: (1) deciding a networking configuration scheme by a universal mobile telecommunications system terrestrial radio access network (UTRAN), (2) based on the decided networking configuration scheme, configuring an intra-frequency cell info list information element and an inter-frequency cell info list information element in system information and measurement control messages by the UTRAN, (3) transmitting signals over a servicing area by the UTRAN, and (4) receiving the system information and measurement control messages by a user equipment (UE) from the UTRAN, acquiring working mode configuration information of each frequency and each timeslot of a serving cell and neighboring cells, and judging whether there are duplicated cell information elements in the intra-frequency cell info list information element or the inter-frequency cell info list information element.
    • TD-SCDMA系统中单频网络的组网方法包括以下步骤:(1)通过通用移动电信系统陆地无线接入网(UTRAN)决定网络配置方案,(2)基于所确定的网络配置方案 ,在UTRAN的系统信息和测量控制消息中配置频率小区信息列表信息单元和频率间小区信息列表信息单元,(3)由UTRAN通过服务区域发送信号,以及(4)接收 来自UTRAN的用户设备(UE)的系统信息和测量控制消息,获取服务小区和相邻小区的每个频率和每个时隙的工作模式配置信息,并且判断是否存在复制小区信息元素, 频率单元信息列表信息单元或频率间单元信息列表信息单元。
    • 3. 发明申请
    • SYNCHRONIZED SOLAR CONCENTRATOR ARRAY
    • 同步太阳能集中器阵列
    • US20080087274A1
    • 2008-04-17
    • US11757004
    • 2007-06-01
    • Datong Chen
    • Datong Chen
    • F24J2/38
    • F24S50/20F24S23/30F24S23/70Y02B10/20Y02E10/47
    • A solar energy collecting device includes a rotation axis to be mounted parallel to the earth's polar axis, a solar energy collector mounted for rotation around the rotation axis at a predetermined rotation speed, the solar energy collector defining a tilt angle with respect to the rotation axis, and a tilt angle adjustment mechanism for automatically and intermittently adjusting the tilt angle. Various configurations of the solar energy collector are possible, and the rotation speed may be one revolution per day or half a revolution per day depending on the solar energy collector configuration. Many drive modes are possible, including rotating continuously throughout a day or rotating during daylight hours and rotating backward or forward at night. The tilt angle adjustment mechanism includes a handle fixed to the solar energy collector and a tilt angle change guide.
    • 太阳能收集装置包括平行于地球极轴的旋转轴线,安装成以预定转速围绕旋转轴旋转的太阳能收集器,太阳能收集器限定相对于旋转轴线的倾斜角度 以及用于自动和间歇地调整倾斜角的倾斜角度调节机构。 太阳能收集器的各种构造是可能的,并且根据太阳能收集器配置,旋转速度可以是每天一转还是每天一转一半。 许多驱动模式是可能的,包括一天中连续旋转或在白天小时旋转,并在夜间向后或向前旋转。 倾斜角度调节机构包括固定于太阳能收集器的手柄和倾斜角度变化导向器。
    • 4. 发明授权
    • Edge enhancement with background noise suppression in video image processing
    • 边缘增强与视频图像处理中的背景噪声抑制
    • US06441866B1
    • 2002-08-27
    • US09231932
    • 1999-01-14
    • Datong ChenHongli Yang
    • Datong ChenHongli Yang
    • H04N521
    • H04N5/208
    • In the field of imaging, various components may contribute to a loss in resolution at higher spatial frequencies, both horizontally and vertically. Higher spatial frequencies may occur at the edge of an image, where there may be a large transition in the signal output between adjacent pixels. To compensate, an edge enhancement method that produces overshoots in the transitions of the video image signal is used. One of the problems with the edge enhancement method is that the noise in the input signal may not be adequately suppressed. To suppress the background noise in the video image signal while still performing the desired edge enhancement function, biasing circuitry may be used to suppress the smaller transitions in the input signal. In particular, the biasing circuitry may be placed in the signal path between the output of a first delay line and the noninverting inputs of two of the signal amplifiers. In this manner, the smaller transitions in the signal which represent background noise may be suppressed, while the edges of the video image signal are still enhanced.
    • 在成像领域,各种组件可能会在较高空间频率(水平和垂直)上造成分辨率的损失。 在图像的边缘处可能出现较高的空间频率,其中在相邻像素之间的信号输出中可能存在大的跃迁。 为了补偿,使用在视频图像信号的转变中产生过冲的边缘增强方法。 边缘增强方法的一个问题是输入信号中的噪声可能不能被充分抑制。 为了在仍然执行期望的边缘增强功能的同时抑制视频图像信号中的背景噪声,可以使用偏置电路来抑制输入信号中较小的转变。 特别地,偏置电路可以放置在第一延迟线的输出和两个信号放大器的同相输入之间的信号路径中。 以这种方式,可以抑制表示背景噪声的信号中较小的转变,而视频图像信号的边缘仍然增强。
    • 5. 发明授权
    • High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth
    • 高电压互补双极和BiCMOS技术采用双外延生长
    • US06365447B1
    • 2002-04-02
    • US09005786
    • 1998-01-12
    • Francois HèbertDatong ChenReda Razouk
    • Francois HèbertDatong ChenReda Razouk
    • H01L218238
    • H01L21/84H01L21/8249H01L27/1203
    • A method of making high voltage complementary bipolar and BiCMOS devices on a common substrate. The bipolar devices are vertical NPN and PNP transistors having the same structure. The fabrication process utilizes trench isolation and thus is scalable. The process uses two epitaxial silicon layers to form the high voltage NPN collector, with the PNP collector formed from a p-well diffused into the two epitaxial layers. The collector contact resistance is minimized by the use of sinker up/down structures formed at the interface of the two epitaxial layers. The process minimizes the thermal budget and therefore the up diffusion of the NPN and PNP buried layers. This maximizes the breakdown voltage at the collector-emitter junction for a given epitaxial thickness. The epitaxial layers may be doped as required depending upon the specifications for the high voltage NPN device. The process is compatible with the fabrication of low voltage devices, which can be formed by placing the sinker regions under the emitter region. The thicknesses of the two epitaxial layers may be adjusted as required depending upon the specifications for the low voltage devices.
    • 在公共衬底上制造高电压互补双极和BiCMOS器件的方法。 双极器件是具有相同结构的垂直NPN和PNP晶体管。 制造工艺利用沟槽隔离,因此是可扩展的。 该工艺使用两个外延硅层来形成高压NPN集电极,PNP集电极由扩散到两个外延层中的p阱形成。 通过使用在两个外延层的界面处形成的沉降片上/下结构来最小化集电极接触电阻。 该过程使热预算最小化,因此最小化NPN和PNP埋层的向上扩散。 对于给定的外延厚度,这使集电极 - 发射极结处的击穿电压最大化。 外延层可以根据需要掺杂,这取决于高压NPN器件的规格。 该工艺与低电压器件的制造兼容,这可以通过将沉降片区域放置在发射极区域下而形成。 根据低电压器件的规格,可以根据需要调整两个外延层的厚度。
    • 6. 发明授权
    • Fabrication of a total internal reflection optical switch with vertical
fluid fill-holes
    • 具有垂直流体填充孔的全内反射光学开关的制造
    • US6055344A
    • 2000-04-25
    • US025892
    • 1998-02-18
    • Julie E. FouquetPatricia A. BeckDatong Chen
    • Julie E. FouquetPatricia A. BeckDatong Chen
    • G02B26/08G02B6/35G02B26/02
    • G02B26/004G02B6/3538G02B6/3546G02B6/3576G02B6/3596Y10T29/49016
    • A method of fabricating a switching element or a matrix of switching elements includes providing a waveguide substrate having at least two waveguides that intersect at a trench such that optical coupling between the waveguides is dependent upon the presence or absence of an index-matching fluid at the intersection of the waveguides with the trench. Fluid is supplied to the trench via a fluid fill-hole that extends through a heater substrate in a direction that is generally perpendicular to a substrate surface on which at least one heater is fabricated. In the preferred embodiment, the fluid fill-hole is formed in a step of inductively coupled plasma (ICP) reactive ion etching (RIE). The waveguide substrate having at least two waveguides and the heater substrate having the heaters and the fill-hole are bonded together after the substrates are aligned such that the trench is in fluid communication with at least one fluid fill-hole and is in thermal communication with at least one heater. Optical fibers are then coupled to the waveguides. Preferably, a structurally weakened edge portion is formed during the ICP RIE step so that the edge portion can be removed after the two substrates are bonded, allowing uninhibited access of the optical fibers to the waveguides.
    • 制造开关元件或开关元件矩阵的方法包括提供具有至少两个在沟槽处相交的波导的波导基板,使得波导之间的光耦合取决于在该波导处的存在或不存在折射率匹配流体 波导与沟槽的交点。 流体通过流体填充孔被供应到沟槽,流体填充孔沿着大致垂直于其上制造至少一个加热器的基板表面的方向延伸穿过加热器基板。 在优选实施例中,在电感耦合等离子体(ICP)反应离子蚀刻(RIE)的步骤中形成流体填充孔。 具有至少两个波导的波导基板和具有加热器和填充孔的加热器基板在基板对准之后结合在一起,使得沟槽与至少一个流体填充孔流体连通并且与 至少一个加热器。 然后将光纤耦合到波导。 优选地,在ICP RIE步骤期间形成结构弱化的边缘部分,使得在两个基板接合之后可以去除边缘部分,允许光纤到波导的不受限制的访问。
    • 7. 发明授权
    • Active pixel with a pinned photodiode
    • 有源像素带有钉扎光电二极管
    • US5880495A
    • 1999-03-09
    • US4215
    • 1998-01-08
    • Datong Chen
    • Datong Chen
    • H01L27/146H01L31/062
    • H01L27/14643H01L27/14609
    • An active pixel for use in an imaging array and formed in a semiconductor substrate having a first conductivity type. The active pixel comprises: a pinned photodiode formed in the semiconductor substrate; a transfer well having a second conductivity type formed in the substrate, the transfer well being adjacent to the pinned photodiode; a transfer gate adjacent the transfer well, the transfer gate for controlling the flow of a signal charge from the pinned photodiode through the transfer well and under the transfer gate; and an output well adjacent the transfer gate for receiving the signal charge and routing the signal charge to output circuitry.
    • 用于成像阵列并形成在具有第一导电类型的半导体衬底中的有源像素。 有源像素包括:形成在半导体衬底中的钉扎光电二极管; 在衬底中形成具有第二导电类型的转移阱,所述转移阱邻近被钉扎的光电二极管; 与转移阱相邻的传输门,用于控制来自钉扎光电二极管的信号电荷通过传输阱并在传输门下方的传输门; 以及与传输门相邻的输出阱,用于接收信号电荷并将信号电荷路由到输出电路。