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1. 发明授权

US07588867B2 Reflection mask, use of the reflection mask and method for fabricating the reflection mask 有权
标题翻译：反射掩模，反射掩模的使用和制造反射掩模的方法
公开(公告)号：US07588867B2
公开(公告)日：2009-09-15
申请号：US11158271
申请日：2005-06-21
申请人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
发明人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/70 , G21K2201/067
摘要： A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13′, 17) is at least partly arranged on a bright field of the multilayer structure (11).
摘要翻译：一种反射掩模，其包括用于将布局平版印刷到目标基底上的结构（20），特别是用于EUV光刻中的反射掩模和反射多层结构（11）。至少一个减光层（13'，17）至少部分地布置在多层结构（11）的明场上。

2. 发明申请

US20050287447A1 Reflection mask, use of the reflection mask and method for fabricating the reflection mask 有权
标题翻译：反射掩模，反射掩模的使用和制造反射掩模的方法
公开(公告)号：US20050287447A1
公开(公告)日：2005-12-29
申请号：US11158271
申请日：2005-06-21
申请人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
发明人： Frank-Michael Kamm , Rainer Pforr , Christian Crell
IPC分类号： G03C5/00 , G03F1/24 , G03H1/02 , G21K5/00 , G03F1/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/70 , G21K2201/067
摘要： A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13′, 17) is at least partly arranged on a bright field of the multilayer structure (11).
摘要翻译：一种反射掩模，其包括用于将布局平版印刷到目标基底上的结构（20），特别是用于EUV光刻中的反射掩模和反射多层结构（11）。至少一个减光层（13'，17）至少部分地布置在多层结构（11）的明场上。

3. 发明授权

US07489386B2 System and method for projecting a pattern from a mask onto a substrate 失效
标题翻译：用于将图案从掩模投影到基底上的系统和方法
公开(公告)号：US07489386B2
公开(公告)日：2009-02-10
申请号：US11743870
申请日：2007-05-03
申请人： Frank-Michael Kamm , Rainer Pforr
发明人： Frank-Michael Kamm , Rainer Pforr
IPC分类号： G03B27/54 , G03B27/52
CPC分类号： G03F7/70308 , G03F7/70233
摘要： A system for projecting a pattern from a mask onto a substrate comprises a radiation source for emitting a light beam in the extreme ultraviolet wavelength range, a mask including absorbent and reflective structures forming the pattern, a collector mirror and an illumination optical system forming a first part of a beam path in order to direct the light beam onto the mask to produce a patterned light beam, a projection optical system including an arrangement of reflective mirrors forming a second part of the beam path in order to focus the reflected light beam from the mask onto the substrate, and an optical element arranged in the beam path and including at least two regions having different degrees of reflection or transmission. First and second of the regions are assigned to respective different first and second positions on the mask and/or collector mirror in accordance with the beam path.
摘要翻译：用于将图案从掩模投影到基板上的系统包括用于发射极紫外波长范围内的光束的辐射源，包括吸收体的掩模和形成图案的反射结构，集光镜和照明光学系统，形成第一光束路径的一部分，以将光束引导到掩模上以产生图案化的光束;投影光学系统，包括形成光束路径的第二部分的反射镜的布置，以便聚焦来自掩模到基板上，以及布置在光束路径中并且包括具有不同反射或透射程度的至少两个区域的光学元件。第一和第二区域根据光束路径被分配到掩模和/或收集器反射镜上的相应不同的第一和第二位置。

4. 发明申请

US20070263198A1 System and Method for Projecting a Pattern from a Mask onto a Substrate 失效
标题翻译：将图案从掩模投影到基板上的系统和方法
公开(公告)号：US20070263198A1
公开(公告)日：2007-11-15
申请号：US11743870
申请日：2007-05-03
申请人： Frank-Michael Kamm , Rainer Pforr
发明人： Frank-Michael Kamm , Rainer Pforr
IPC分类号： G03B27/54
CPC分类号： G03F7/70308 , G03F7/70233
摘要： A system for projecting a pattern from a mask onto a substrate comprises a radiation source for emitting a light beam in the extreme ultraviolet wavelength range, a mask including absorbent and reflective structures forming the pattern, a collector mirror and an illumination optical system forming a first part of a beam path in order to direct the light beam onto the mask to produce a patterned light beam, a projection optical system including an arrangement of reflective mirrors forming a second part of the beam path in order to focus the reflected light beam from the mask onto the substrate, and an optical element arranged in the beam path and including at least two regions having different degrees of reflection or transmission. First and second of the regions are assigned to respective different first and second positions on the mask and/or collector mirror in accordance with the beam path.
摘要翻译：用于将图案从掩模投影到基板上的系统包括用于发射极紫外波长范围内的光束的辐射源，包括吸收体的掩模和形成图案的反射结构，集光镜和照明光学系统，形成第一光束路径的一部分，以将光束引导到掩模上以产生图案化的光束;投影光学系统，包括形成光束路径的第二部分的反射镜的布置，以便聚焦来自掩模到基板上，以及布置在光束路径中并且包括具有不同反射或透射程度的至少两个区域的光学元件。第一和第二区域根据光束路径被分配到掩模和/或收集器反射镜上的相应不同的第一和第二位置。

5. 发明授权

US08293431B2 Lithographic mask and method of forming a lithographic mask 有权
标题翻译：平版印刷掩模和形成光刻掩模的方法
公开(公告)号：US08293431B2
公开(公告)日：2012-10-23
申请号：US12761876
申请日：2010-04-16
申请人： Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
发明人： Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
IPC分类号： G03F1/40
CPC分类号： G03F1/40 , G03F1/26 , G03F1/30 , G03F1/32
摘要： A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.
摘要翻译：平版印刷掩模包括包括凹槽的第一层，包含区域的第二层和包围区段的凹槽状结构。形成第一层和第二层以便减小第二层内的电位差。形成光刻掩模的方法包括形成第一层和第二层以将第二层设置在第一层上，将第二层图案化以包括封闭这些区段的区段，区域和沟槽状结构，以及在第一层中形成凹槽层在未被第二层覆盖的部分。形成第一层和第二层，以在形成第一层中的槽的步骤期间减小第二层内的电位差。

6. 发明授权

US07855776B2 Methods of compensating lens heating, lithographic projection system and photo mask 有权
标题翻译：补偿透镜加热，光刻投影系统和光罩的方法
公开(公告)号：US07855776B2
公开(公告)日：2010-12-21
申请号：US12056060
申请日：2008-03-26
申请人： Bernd Kuechler , Rainer Pforr , Thomas Muelders
发明人： Bernd Kuechler , Rainer Pforr , Thomas Muelders
IPC分类号： G03B27/68
CPC分类号： G03F7/70891 , G03F1/36 , G03F1/50 , G03F7/70433
摘要： Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.
摘要翻译：实施例涉及补偿透镜加热，光刻投影系统和光掩模。因此，通过提供包括在第一区域中基本对称布置的规则图案和包括多个子分辨率结构元件的子分辨率图案的布局图案来补偿透镜加热，其中在第二区域中的子分辨率图案，以便在光刻投影的情况下使投影装置的非均匀透镜加热最小化。

7. 发明授权

US07644389B2 Method for producing a mask for the lithographic projection of a pattern onto a substrate 失效
标题翻译：用于制造用于将图案的光刻投影到基板上的掩模的方法
公开(公告)号：US07644389B2
公开(公告)日：2010-01-05
申请号：US11668565
申请日：2007-01-30
申请人： Mario Hennig , Rainer Pforr , Gerd Unger
发明人： Mario Hennig , Rainer Pforr , Gerd Unger
IPC分类号： G06F17/50 , G03F1/00 , G03C5/00
CPC分类号： G03F7/70191 , G03F1/00
摘要： A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.
摘要翻译：布局被分解为部分图案。为每个部分图案绘制中间掩模。中间掩模在掩模步进器或扫描仪中逐渐用于投影到测试掩模上的共同图案中。从测试掩模或使用掩模曝光的测试晶片确定线宽度分布LB（x，y），并将其转换成剂量校正的分布。基于所计算的剂量校正来适应各个中间掩模的传输T（x，y）。这可以使用分配给中间掩模并具有阴影结构元件的附加光学元件，或者通过激光引起的中间掩模本身的石英衬底中的遮光元件的后侧引入来实现。

8. 发明申请

US20090170024A1 Method of Patterning a Substrate, Photosensitive Layer Stack and System for Lithography 审中-公开
标题翻译：基板图案，光敏层堆叠和光刻系统的方法
公开(公告)号：US20090170024A1
公开(公告)日：2009-07-02
申请号：US11968015
申请日：2007-12-31
申请人： Mario Hennig , Rainer Pforr , Jens Reichelt
发明人： Mario Hennig , Rainer Pforr , Jens Reichelt
IPC分类号： G03C1/00 , G03F7/26 , G03B27/34
CPC分类号： G03F7/70958 , G03F7/70633 , G03F9/7084
摘要： A photosensitive layer stack, lithographic systems and methods of patterning a substrate are disclosed having a patterning layer and a photochromic layer with an absorption switching from transmissive to absorptive upon exposure.
摘要翻译：公开了感光层堆叠，光刻系统和图案化衬底的方法，其具有图案化层和光致变色层，其在曝光时具有从透射到吸收的吸收切换。

9. 发明申请

US20080204686A1 Mask Structure for Manufacturing an Integrated Circuit by Photolithographic Patterning 审中-公开
标题翻译：通过光刻图案制造集成电路的掩模结构
公开(公告)号：US20080204686A1
公开(公告)日：2008-08-28
申请号：US12037795
申请日：2008-02-26
申请人： Wolfgang Henke , Mario Hennig , Rainer Pforr
发明人： Wolfgang Henke , Mario Hennig , Rainer Pforr
IPC分类号： G03B27/42 , G03F1/14 , G03F7/26
CPC分类号： G02B27/4261 , G02B27/0043 , G02B27/28 , G02B27/4216 , G02B27/4222 , G03F1/32
摘要： Photolithography using polarized light is disclosed. For example, a method includes transmitting the light through a mask having a first area with a first class of patterns and a second area with a second class of patterns thereby generating a virtual image. The virtual image is exposed into a resist layer. The polarization of the light passing the first area is modified while the light passing the mask.
摘要翻译：公开了使用偏振光的光刻技术。例如，一种方法包括通过具有第一类图案的第一区域的掩模和具有第二类图案的第二区域来传输光，从而生成虚像。虚拟图像被曝光到抗蚀剂层中。通过第一区域的光的偏振改变，同时通过掩模。

10. 发明申请

US20050196689A1 Method for transferring a layout of an integrated circuit level to a semiconductor substrate 审中-公开
标题翻译：用于将集成电路电平的布局传送到半导体衬底的方法
公开(公告)号：US20050196689A1
公开(公告)日：2005-09-08
申请号：US11071571
申请日：2005-03-04
申请人： Christoph Nolscher , Rainer Pforr , Mario Hennig , Albrecht Kieslich
发明人： Christoph Nolscher , Rainer Pforr , Mario Hennig , Albrecht Kieslich
IPC分类号： G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/30
摘要： A mask level layout has an arrangement of lines and spaces with the spaces interconnected by a further space. The spaces are alternately acted upon with a phase deviation with respect to the spaces, where a phase edge between spaces acted upon differently arises in the region of the further space. Alternatively, the connecting space within the layout may be filled with dark regions. An additional space is inserted in a second layout representing a further mask of the same mask set. The additional space enables formation of an insulating region on a semiconductor substrate at the location where formation of a continuous isolation trench is not possible due to the phase edges or dark regions within originally connecting spaces of the first mask. The first mask can be embodied as a hybrid mask with structures according to the principle of alternating phase masks with a large process window.
摘要翻译：掩模级别布局具有线和空间的布置，空间通过另外的空间互连。空间交替地以相对于空间的相位偏移地起作用，其中空间之间的相位在另外空间的区域中不同地起作用。或者，布局中的连接空间可以用黑色区域填充。在另一个布局中插入一个额外的空间，表示相同掩模集的另一掩码。附加空间使得能够在由于第一掩模的原始连接空间内的相位边缘或暗区域而不可能形成连续隔离沟槽的位置处在半导体衬底上形成绝缘区域。第一个掩模可以实现为具有根据具有大工艺窗口的交替相位掩模原理的结构的混合掩模。

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