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1. 发明授权

US07200460B2 Method of depositing low dielectric constant silicon carbide layers 有权
标题翻译：沉积低介电常数碳化硅层的方法
公开(公告)号：US07200460B2
公开(公告)日：2007-04-03
申请号：US10375793
申请日：2003-02-25
申请人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
发明人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
IPC分类号： G06F19/00 , C23C16/00 , G03C5/00
CPC分类号： H01L21/02167 , C23C16/36 , H01L21/02205 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/0276 , H01L21/31144 , H01L21/314 , H01L21/76808 , H01L21/76813 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L2221/1031
摘要： A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
摘要翻译：提供一种形成用于集成电路的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和氮源的气体混合物反应而形成。沉积的碳化硅层从氮源中掺入氮。

2. 发明授权

US06537733B2 Method of depositing low dielectric constant silicon carbide layers 有权
公开(公告)号：US06537733B2
公开(公告)日：2003-03-25
申请号：US09793818
申请日：2001-02-23
申请人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
发明人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
IPC分类号： C23C1632
CPC分类号： H01L21/02167 , C23C16/36 , H01L21/02205 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/0276 , H01L21/31144 , H01L21/314 , H01L21/76808 , H01L21/76813 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L2221/1031
摘要： A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

3. 发明授权

US06855484B2 Method of depositing low dielectric constant silicon carbide layers 失效
标题翻译：沉积低介电常数碳化硅层的方法
公开(公告)号：US06855484B2
公开(公告)日：2005-02-15
申请号：US10375853
申请日：2003-02-25
申请人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
发明人： Francimar Campana , Srinivas Nemani , Michael Chapin , Shankar Venkataraman
IPC分类号： C23C16/36 , H01L21/027 , H01L21/311 , H01L21/314 , H01L21/768 , C23C16/32
CPC分类号： H01L21/02167 , C23C16/36 , H01L21/02205 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/0276 , H01L21/31144 , H01L21/314 , H01L21/76808 , H01L21/76813 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L2221/1031
摘要： A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
摘要翻译：提供一种形成用于集成电路的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和氮源的气体混合物反应而形成。沉积的碳化硅层从氮源中掺入氮。

4. 发明申请

US20050264811A1 Three dimensional engineering of planar optical structures 有权
公开(公告)号：US20050264811A1
公开(公告)日：2005-12-01
申请号：US11192159
申请日：2005-07-28
申请人： Xiangxin Bi , Elizabeth Nevis , Ronald Mosso , Michael Chapin , Shivkumar Chiruvolu , Sardar Khan , Sujeet Kumar , Herman Lopez , Nguyen Huy , Craig Horne , Michael Bryan , Eric Euvrard
发明人： Xiangxin Bi , Elizabeth Nevis , Ronald Mosso , Michael Chapin , Shivkumar Chiruvolu , Sardar Khan , Sujeet Kumar , Herman Lopez , Nguyen Huy , Craig Horne , Michael Bryan , Eric Euvrard
IPC分类号： H01S3/063 , H01S3/0941 , H01S3/17 , G01N21/00
CPC分类号： H01S3/0632 , H01S3/0635 , H01S3/0637 , H01S3/0941 , H01S3/176 , H01S3/2308
摘要： Three dimensional optical structures are described that can have various integrations between optical devices within and between layers of the optical structure. Optical turning elements can provide optical pathways between layers of optical devices. Methods are described that provide for great versatility on contouring optical materials throughout the optical structure. Various new optical devices are enabled by the improved optical processing approaches.

5. 发明申请

US20060134347A1 Dense coating formation by reactive deposition 失效
公开(公告)号：US20060134347A1
公开(公告)日：2006-06-22
申请号：US11017214
申请日：2004-12-20
申请人： Shivkumar Chiruvolu , Michael Chapin
发明人： Shivkumar Chiruvolu , Michael Chapin
IPC分类号： B05D3/00 , C23C8/00
CPC分类号： H01M8/0228 , B05D3/06 , C23C8/00 , C23C16/45519 , C23C16/483 , C23C26/00 , H01M8/0252 , H01M8/1231 , H01M8/141 , H01M2008/1293 , H01M2008/147 , Y02E60/526
摘要： Methods for forming coated substrates can be based on depositing material from a flow onto a substrate in which the coating material is formed by a reaction within the flow. In some embodiments, the product materials are formed in a reaction driven by photon energy absorbed from a radiation beam. In additional or alternative embodiments, the flow with the product stream is directed at the substrate. The substrate may be moved relative to the flow. Coating materials can be formed with densities of 65 percent to 95 percent of the fully densified coating material with a very high level of coating uniformity.

6. 发明授权

US5551643A Fluorescent tube breaker apparatus 失效
标题翻译：荧光管断路器装置
公开(公告)号：US5551643A
公开(公告)日：1996-09-03
申请号：US524992
申请日：1995-09-08
申请人： Michael Chapin
发明人： Michael Chapin
IPC分类号： B02C19/14
CPC分类号： B02C19/0068
摘要： A fluorescent tube breaker apparatus includes a housing assembly which defines a bulb-receiving chamber for receiving a fluorescent tube. The housing assembly includes a first end portion, a body portion, and a second end portion. The second end portion is selectively removable and replaceable with respect to the body portion, and the body portion includes a spike-receiver aperture. A tube breaker assembly is connected to the housing assembly and includes a housing-connection portion connected to the housing assembly. A hinge portion is connected to the housing-connection portion. A lever portion is connected to the hinge portion, and a spike portion is connected to the lever portion. The spike portion projects from the lever portion and is in registration with the spike-receiver aperture of the body portion of the housing assembly. The spike portion includes a connected end which is connected to the lever portion of the tube breaker assembly. A main body of the spike portion is connected to the connected end. A free tip end is connected to the main body. A spring member is positioned between the lever portion of the tube breaker assembly and the body portion of the housing assembly. The spring member normally positions the lever portion with respect to the body portion such that the main body of the spike portion is normally positioned outside of the bulb-receiving chamber.
摘要翻译：荧光管断路器装置包括壳体组件，其限定用于接收荧光管的灯泡接收室。壳体组件包括第一端部，主体部分和第二端部。第二端部相对于主体部分选择性地可拆卸和可替换，并且主体部分包括钉接收器孔。管断路器组件连接到壳体组件并且包括连接到壳体组件的壳体连接部分。铰链部分连接到壳体连接部分。杠杆部分连接到铰链部分，并且钉部分连接到杆部分。尖钉部分从杠杆部分突出并且与壳体组件的主体部分的钉接收器孔对准。尖钉部分包括连接到管断路器组件的杠杆部分的连接端。尖端部分的主体连接到连接端。自由末端连接到主体。弹簧构件定位在管断路器组件的杆部分和壳体组件的主体部分之间。弹簧构件通常将杠杆部分相对于主体部分定位，使得尖钉部分的主体通常位于灯泡容纳室的外部。

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