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1. 发明申请

US20080210555A1 HIGH DENSITY CERAMIC AND CERMET SPUTTERING TARGETS BY MICROWAVE SINTERING 审中-公开
标题翻译：高密度陶瓷和微粒溅射目标通过微波烧结
公开(公告)号：US20080210555A1
公开(公告)日：2008-09-04
申请号：US11950240
申请日：2007-12-04
申请人： Fenglin Yang , Anirban Das , Carl Derrington , Bernd Kunkel
发明人： Fenglin Yang , Anirban Das , Carl Derrington , Bernd Kunkel
IPC分类号： C23C14/08 , B22F1/00
CPC分类号： C23C14/3414 , B22F3/105 , B22F2003/1054 , B22F2998/10 , C04B35/053 , C04B35/111 , C04B35/44 , C04B35/46 , C04B35/465 , C04B35/481 , C04B35/486 , C04B35/491 , C04B35/495 , C04B35/5607 , C04B35/583 , C04B35/632 , C04B2235/604 , C04B2235/608 , C04B2235/6562 , C04B2235/6567 , C04B2235/667 , C04B2235/77 , C22C1/051 , C22C29/005 , B22F3/02 , B22F3/04
摘要： A method of manufacturing sputtering targets from powder materials, comprising steps of: providing at least one raw powder material; forming the at least one raw powder material into a green body with density greater than about 40 % of theoretical maximum density; treating the green body with microwaves to form a sintered body with density greater than about 97% of theoretical maximum density; and forming a sputtering target from the sintered body. The methodology is especially useful in the fabrication of targets comprising dielectric and cermet materials.
摘要翻译：一种从粉末材料制造溅射靶的方法，包括以下步骤：提供至少一种原料粉末材料; 将至少一种原料粉末材料形成密度大于理论最大密度的约40％的生坯体; 用微波处理生坯体以形成密度大于理论最大密度的约97％的烧结体; 从烧结体形成溅射靶。该方法在制造包括电介质和金属陶瓷材料的靶中是特别有用的。

2. 发明申请

US20080166255A1 HIGH DENSITY, LOW OXYGEN RE AND RE-BASED CONSOLIDATED POWDER MATERIALS FOR USE AS DEPOSITION SOURCES & METHODS OF MAKING SAME 审中-公开
标题翻译：高密度，低氧原理和基于RE的复合粉末材料用作沉积源及其制备方法
公开(公告)号：US20080166255A1
公开(公告)日：2008-07-10
申请号：US11969172
申请日：2008-01-03
申请人： Fenglin YANG , Carl Derrington , Bernd Kunkel
发明人： Fenglin YANG , Carl Derrington , Bernd Kunkel
IPC分类号： B22F3/12 , B22F1/00 , B22F3/02 , C22C27/00
CPC分类号： C22C27/00 , B22F2998/10 , B22F2999/00 , C22C1/04 , C22C1/05 , C23C14/3414 , B22F1/0085 , B22F3/04 , B22F3/15 , B22F2201/013
摘要： A method of making Re and Re-based materials comprises steps of: providing a Re powder starting material or a Re powder starting material and at least one additional powder material; subjecting at least the Re powder to a first degassing treatment for reducing the oxygen content thereof; increasing the density of the degassed Re powder or a mixture of the degassed Re powder and the at least one additional powder material to form a green billet; subjecting the billet to a second degassing treatment to further reduce the oxygen content; and consolidating the billet to form a consolidated material with greater than about 95% of theoretical density and low oxygen content below about 200 ppm for Re and below about 500 ppm for Re-based materials formed from the mixture, excluding oxygen from non-metallic compounds and ceramics. Materials so produced are useful in the manufacture of deposition sources such as sputtering targets.
摘要翻译：制造Re和Re基材料的方法包括以下步骤：提供Re粉末起始材料或Re粉末起始材料和至少一种另外的粉末材料; 至少对Re粉末进行第一次脱气处理以降低其氧含量; 增加脱气的Re粉末或脱气的Re粉末和至少一种另外的粉末材料的混合物的密度以形成绿色坯料; 对坯料进行第二次脱气处理以进一步降低氧含量; 并固化坯料以形成具有大于理论密度的约95％和低于约200ppm的低氧含量的Re并且低于约500ppm的由混合物形成的Re基材料的固结材料，不包括来自非金属化合物的氧和陶瓷。如此生产的材料可用于制造诸如溅射靶的沉积源。

3. 发明申请

US20080170959A1 Full density Co-W magnetic sputter targets 审中-公开
标题翻译：全密度Co-W磁溅射靶
公开(公告)号：US20080170959A1
公开(公告)日：2008-07-17
申请号：US11653003
申请日：2007-01-11
申请人： Fenglin Yang , Bernd Kunkel , Steven Roger Kennedy , Anirban Das
发明人： Fenglin Yang , Bernd Kunkel , Steven Roger Kennedy , Anirban Das
IPC分类号： B22F3/24 , B22F3/12 , C22C19/07 , C22C27/04
CPC分类号： C23C14/3414 , B22F3/15 , B22F2999/00 , C22C1/0433 , C22C1/0441 , C22C1/045 , B22F3/1017 , B22F3/1028 , B22F2203/11 , B22F2203/13
摘要： A sputter target is provided with a first elemental phase of a first material, the first material being either cobalt or tungsten, a first intermetallic phase including the first material and a second material, the second material being either tungsten or cobalt and different from the first material, the first material in a greater atomic percentage than the second material, and a second intermetallic phase including the second material and the first material, the second material in a greater atomic percentage than the first material. The sputter target includes 20-80 at. % cobalt, and has a density greater than 99% of a theoretical maximum density thereof. The sputter target is fabricated by selecting a cobalt powder and a tungsten powder having the same particle size distribution, blending the cobalt powder and the tungsten powder to form a blended powder, canning the blended powder, hot pressing the blended powder to form a solid, and machining the solid to form a sputter target.
摘要翻译：溅射靶设置有第一材料的第一元素相，第一材料是钴或钨，第一金属间相包括第一材料和第二材料，第二材料是钨或钴，并且不同于第一材料材料，比第二材料具有更大原子百分比的第一材料，以及包括第二材料和第一材料的第二金属间相，第二材料的原子百分比大于第一材料。溅射靶包括20-80°。％的钴，并且其密度大于其理论最大密度的99％。通过选择具有相同粒度分布的钴粉末和钨粉末来制造溅射靶，混合钴粉末和钨粉末以形成混合粉末，罐装混合粉末，热压混合粉末以形成固体，并加工固体以形成溅射靶。

4. 发明申请

US20090053089A1 HOMOGENEOUS GRANULATED METAL BASED and METAL-CERAMIC BASED POWDERS 审中-公开
标题翻译：均匀的基于金属和金属陶瓷的粉末
公开(公告)号：US20090053089A1
公开(公告)日：2009-02-26
申请号：US11841196
申请日：2007-08-20
申请人： Fenglin YANG , Carl Derrington , Bernd Kunkel
发明人： Fenglin YANG , Carl Derrington , Bernd Kunkel
IPC分类号： B22F7/00 , C22C32/00
CPC分类号： B22F9/026 , C22C1/05
摘要： A method of making a homogeneous granulated metal-based powder, comprises steps of: providing preselected amounts of at least one metal element or metal alloy, at least one ceramic compound, and/or at least one non-metallic element; forming a homogeneous slurry/suspension or wet mixture comprising the preselected amounts of metal element(s) and/or metal alloys, ceramic compound(s), and/or non-metallic element(s), a liquid phase comprising at least one liquid, and at least one binder material; drying the slurry/suspension or mixture to remove at least a portion of the liquid phase and form a powder mixture comprising partially or completely dried granules; and subjecting the granules to a thermal de-binder process for effecting: additional removal of any remaining liquid phase, if necessary; removal of the at least one binder material; reduction of carbon content; reduction of oxygen on the surfaces or interior of the metal or metal alloy phases in the granules; and optional partial sintering for strengthening for withstanding subsequent processing. The resultant granules are useful in fabricating magnetic sputtering targets employed in the manufacture of magnetic data/information storage and retrieval media.
摘要翻译：制备均匀的粒状金属基粉末的方法包括以下步骤：提供预选量的至少一种金属元素或金属合金，至少一种陶瓷化合物和/或至少一种非金属元素; 形成均匀的浆料/悬浮液或湿混合物，其包含预选量的金属元素和/或金属合金，陶瓷化合物和/或非金属元素，液相包含至少一种液体，和至少一种粘合剂材料; 干燥浆液/悬浮液或混合物以除去至少一部分液相并形成包含部分或完全干燥的颗粒的粉末混合物; 并且对颗粒进行热去粘合剂处理以进行：如果需要，另外除去任何剩余的液相; 去除所述至少一种粘合剂材料; 碳含量降低; 减少颗粒中金属或金属合金相的表面或内部的氧气; 和可选的部分烧结用于加强以耐受后续加工。所得颗粒可用于制造用于制造磁数据/信息存储和检索介质的磁性溅射靶。

5. 发明申请

US20090107837A1 METHODOLOGY FOR RECYCLING RU AND RU-ALLOY DEPOSITION TARGETS & TARGETS MADE OF RECYCLED RU AND RU-BASED ALLOY POWDERS 有权
标题翻译：回收RU和RU合金沉积目标的方法和回收RU和RU的合金粉末的目标
公开(公告)号：US20090107837A1
公开(公告)日：2009-04-30
申请号：US11927325
申请日：2007-10-29
申请人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
发明人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
IPC分类号： C23C14/14 , B22F9/04 , B22F1/00 , C22C5/04
CPC分类号： C22B11/02 , C22B7/005 , C22B7/007 , C23C14/3414 , Y02P10/234
摘要： A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.
摘要翻译：回收钌（Ru）和Ru基合金的方法包括以下步骤：提供Ru或Ru-基合金的固体; 分割身体以形成颗粒材料; 从颗粒材料中去除污染物，包括Fe; 减小颗粒材料的尺寸以形成粉末材料; 从粉末材料中去除污染物，包括Fe; 将粉末材料的氧含量降低至预定水平以形成纯化粉末材料; 并从净化的粉末材料除去大于预定尺寸的颗粒。纯化的粉末材料可用于形成沉积源，例如溅射靶。

6. 发明申请

US20120111723A1 METHODOLOGY FOR RECYCLING RU AND RU-ALLOY DEPOSITION TARGETS & TARGETS MADE OF RECYCLED RU AND RU-BASED ALLOY POWDERS 审中-公开
标题翻译：回收RU和RU合金沉积目标的方法和回收RU和RU的合金粉末的目标
公开(公告)号：US20120111723A1
公开(公告)日：2012-05-10
申请号：US13350638
申请日：2012-01-13
申请人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
发明人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
IPC分类号： C22C5/04 , C23C14/06
CPC分类号： C22B11/02 , C22B7/005 , C22B7/007 , C23C14/3414 , Y02P10/234
摘要： A recycled deposition source is ruthenium (Ru) or Ru-based alloy material in the form of a powder material having a size not greater than a 325 mesh size and having an average tap density greater than about 5 gm/cm3. The power material may be non-porous and not agglomerated The recycled deposition source may have less than about 500 ppm of iron and less than about 500 ppm of oxygen. The recycled deposition source may be a recycled Ru or RuCr deposition source, where the recycled Ru or RuCr deposition source has a density comparable to a density of a Ru or RuCr deposition source fabricated from virgin Ru or RuCr powder material, and has a hardness greater than a hardness of a Ru or RuCr deposition source fabricated from virgin Ru or RuCr powder material. The recycled deposition source may be in the form of a sputtering target.
摘要翻译：回收的沉积源是具有尺寸不大于325目尺寸并且具有大于约5gm / cm 3的平均振实密度的粉末材料形式的钌（Ru）或Ru基合金材料。动力材料可以是无孔的并且不附聚。再循环的沉积源可以具有小于约500ppm的铁和小于约500ppm的氧。回收的沉积源可以是再循环的Ru或RuCr沉积源，其中再循环的Ru或RuCr沉积源的密度与由原始Ru或RuCr粉末材料制成的Ru或RuCr沉积源的密度相当，并且具有更大的硬度比由原始Ru或RuCr粉末材料制成的Ru或RuCr沉积源的硬度。再循环的沉积源可以是溅射靶的形式。

7. 发明申请

US20090028744A1 Ultra-high purity NiPt alloys and sputtering targets comprising same 审中-公开
标题翻译：超高纯NiPt合金和包含它们的溅射靶
公开(公告)号：US20090028744A1
公开(公告)日：2009-01-29
申请号：US11880847
申请日：2007-07-23
申请人： Jun Hui , ShinHwa Li , David Long , Carl Derrington , Bernd Kunkel
发明人： Jun Hui , ShinHwa Li , David Long , Carl Derrington , Bernd Kunkel
IPC分类号： C22C19/03 , B22C3/00 , C22C5/04
CPC分类号： C22C5/04 , C22B9/003 , C22B23/06 , C22C1/02 , C22C1/023 , C22C1/03 , C22C19/03 , C22C30/00 , C22F1/10 , C22F1/14 , C23C14/3414 , Y02P10/253
摘要： A method of making a NiPt alloy having an ultra-high purity of at least about 4N5 and suitable for use as a sputtering target, comprises steps of: heating predetermined amounts of lesser purity Ni and Pt at an elevated temperature in a crucible to form a NiPt alloy melt, the crucible being composed of a material which is inert to the melt at the elevated temperature; and transferring the melt to a mold having a cavity with a surface coated with a release agent which does not contaminate the melt with impurity elements. The resultant NiPt alloy has a very low concentration of impurity elements and is subjected to cross-directional hot rolling for reducing thickness and grain size.
摘要翻译：制备具有至少约4N5的超高纯度并适合用作溅射靶的NiPt合金的方法包括以下步骤：在坩埚中在高温下加热预定量的较低纯度的Ni和Pt，形成 NiPt合金熔体，坩埚由在高温下对熔体惰性的材料构成; 并将熔体转移到具有空腔的模具，其表面涂覆有不会杂质元素污染熔体的脱模剂。所得的NiPt合金具有非常低的杂质元素浓度，并进行横向热轧以减小厚度和晶粒尺寸。

8. 发明授权

US08118906B2 Methodology for recycling Ru and Ru-alloy deposition targets and targets made of recycled Ru and Ru-based alloy powders 有权
标题翻译：回收Ru和Ru合金沉积目标和由再循环的Ru和Ru基合金粉末制成的靶材的方法
公开(公告)号：US08118906B2
公开(公告)日：2012-02-21
申请号：US11927325
申请日：2007-10-29
申请人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
发明人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
IPC分类号： B22F9/04
CPC分类号： C22B11/02 , C22B7/005 , C22B7/007 , C23C14/3414 , Y02P10/234
摘要： A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.
摘要翻译：回收钌（Ru）和Ru基合金的方法包括以下步骤：提供Ru或Ru-基合金的固体; 分割身体以形成颗粒材料; 从颗粒材料中去除污染物，包括Fe; 减小颗粒材料的尺寸以形成粉末材料; 从粉末材料中去除污染物，包括Fe; 将粉末材料的氧含量降低至预定水平以形成纯化粉末材料; 并从净化的粉末材料除去大于预定尺寸的颗粒。纯化的粉末材料可用于形成沉积源，例如溅射靶。

9. 发明申请

US20070169853A1 Magnetic sputter targets manufactured using directional solidification 审中-公开
标题翻译：使用定向凝固制造的磁性溅射靶
公开(公告)号：US20070169853A1
公开(公告)日：2007-07-26
申请号：US11336980
申请日：2006-01-23
申请人： Bernd Kunkel , David Long , Abdelouahab Ziani , Anirban Das , Jun Hui
发明人： Bernd Kunkel , David Long , Abdelouahab Ziani , Anirban Das , Jun Hui
IPC分类号： C22C19/07
CPC分类号： C23C14/3414 , B22D27/045 , C22C19/007 , C22C19/07
摘要： A sputter target includes a metal alloy having a target surface, a rear surface and a thickness between the target and rear surfaces. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has a thickness direction substantially along the thickness. The target surface is substantially normal to the thickness direction. The metal alloy has a single substantially homogenous microstructural zone across substantially the entire thickness. The metal alloy further includes dendrites. The dendrites at the target surface are oriented along substantially one direction, and the dendrites at a center plane of the metal alloy are oriented along substantially the same one direction. A sputter target may include a metal alloy which is a cobalt (Co) based, and may have a [0001] hexagonal close-packing (HCP) direction oriented substantially normal to the target surface. The sputter target may be formed by directional solidification at near-equilibrium temperature conditions by withdrawing the metal alloy at a first rate through a temperature gradient. The sputter target is for forming one or more magnetic layers on a substrate for, among other purposes, data storage.
摘要翻译：溅射靶包括具有目标表面，后表面和目标表面和后表面之间的厚度的金属合金。目标表面和后表面是金属合金的外表面。金属合金的厚度方向基本上沿厚度方向。目标表面基本上垂直于厚度方向。金属合金在基本上整个厚度上具有单个基本均匀的微结构区域。金属合金还包括枝晶。目标表面的枝晶沿着大致一个方向取向，金属合金的中心平面上的枝晶沿大致相同的一个方向取向。溅射靶可以包括基于钴（Co）的金属合金，并且可以具有基本上垂直于目标表面定向的[0001]六方密封（HCP）方向。可以通过在接近平衡温度条件下的定向凝固来形成溅射靶，通过温度梯度以第一速率取出金属合金。溅射靶用于在衬底上形成一个或多个磁性层，以用于数据存储。

10. 发明申请

US20090010792A1 Brittle metal alloy sputtering targets and method of fabricating same 审中-公开
标题翻译：脆性金属合金溅射靶及其制造方法
公开(公告)号：US20090010792A1
公开(公告)日：2009-01-08
申请号：US11822065
申请日：2007-07-02
申请人： Wuwen Yi , Bernd Kunkel , Carl Derrington , ShinHwa Li , Anand Deodutt
发明人： Wuwen Yi , Bernd Kunkel , Carl Derrington , ShinHwa Li , Anand Deodutt
IPC分类号： B22F3/02 , C23C14/34
CPC分类号： C22C27/02 , B22F2003/247 , B22F2998/00 , B22F2998/10 , C22C1/04 , C22C5/04 , C23C14/3414 , H01L21/2855 , H01L21/76843 , H01L21/76873 , C22C1/045 , C22C1/0466 , B22F1/0003 , B22F3/04 , B22F3/15 , B22F3/24
摘要： A method of fabricating a sputtering target assembly comprises steps of mixing/blending selected amounts of powders of at least one noble or near-noble Group VIII metal at least one Group IVB, VB, or VIB refractory metal; forming the mixed/blended powder into a green compact having increased density; forming a full density compact from the green compact; cutting a target plate slice from the full density compact; diffusion bonding a backing plate to a surface of the target plate slice to form a target/backing plate assembly; and machining the target/backing plate assembly to a selected final dimension. The disclosed method is particularly useful for fabricating large diameter Ru—Ta alloy targets utilized in semiconductor metallization processing.
摘要翻译：制造溅射靶组件的方法包括以下步骤：将至少一种贵金属或近贵金属Ⅷ族金属的至少一种IVB族，VB族或VIB族难熔金属的选定量的粉末混合/共混; 将混合/混合的粉末形成具有增加的密度的生坯; 从绿色压块形成全密度的压块; 从全密度压实切割靶板切片; 将背板扩散粘合到靶板切片的表面以形成靶/背板组件; 并将目标/背板组件加工到所选的最终尺寸。所公开的方法对于制造用于半导体金属化处理的大直径Ru-Ta合金靶特别有用。

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