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1. 发明申请

US20080131735A1 Ni-X, Ni-Y, and Ni-X-Y alloys with or without oxides as sputter targets for perpendicular magnetic recording 审中-公开
标题翻译：具有或不具有氧化物的Ni-X，Ni-Y和Ni-X-Y合金作为用于垂直磁记录的溅射靶
公开(公告)号：US20080131735A1
公开(公告)日：2008-06-05
申请号：US11633576
申请日：2006-12-05
申请人： Anirban Das , Steven Roger Kennedy , Michael Gene Racine
发明人： Anirban Das , Steven Roger Kennedy , Michael Gene Racine
IPC分类号： G11B5/66 , C23C14/34
CPC分类号： G11B5/8404 , C23C14/025 , C23C14/165 , C23C14/3414 , G11B5/656 , G11B5/7379 , G11B5/851
摘要： The various embodiments of the present invention generally relate to the deposition of a seedlayer for a magnetic recording medium used for perpendicular magnetic recording (PMR) applications, where the seedlayer provides for grain size refinement and reduced lattice mis-fit for a subsequently deposited underlayer or granular magnetic layer, and where the seedlayer is deposited using a nickel (Ni) alloy based sputter target. The nickel (Ni) alloy can be binary (Ni—X; Ni—Y) or ternary (Ni—X—Y). In addition, the binary (Ni—X; Ni—Y) or ternary (Ni—X—Y) nickel (Ni) based alloys can be further alloyed with metal oxides, thus forming seedlayer thin films with a granular microstructure containing metallic grains, surrounded by an oxygen rich grain boundary. The nickel-based alloys (with or without metal oxides) of the various exemplary embodiments can be made by powder metallurgical technique or by melt-casting techniques, with or without thermo-mechanical working.
摘要翻译：本发明的各种实施方案通常涉及用于垂直磁记录（PMR）应用的磁记录介质的种子层的沉积，其中种子层提供用于随后沉积的底层的晶粒尺寸细化和减小的晶格失配，粒状磁性层，并且使用基于镍（Ni）合金的溅射靶材沉积种子层。镍（Ni）合金可以是二元（Ni-X; Ni-Y）或三元（Ni-X-Y）。此外，二元（Ni-X; Ni-Y）或三元（Ni-XY）镍（Ni）基合金可以与金属氧化物进一步合金化，从而形成具有包含金属颗粒的颗粒状微观结构的层状薄膜，富氧晶界。各种示例性实施例的镍基合金（具有或不具有金属氧化物）可以通过粉末冶金技术或通过熔体流延技术制造，具有或不具有热机械加工。

2. 发明申请

US20050072668A1 Sputter target having modified surface texture 审中-公开
标题翻译：具有改进的表面纹理的溅射靶
公开(公告)号：US20050072668A1
公开(公告)日：2005-04-07
申请号：US10929505
申请日：2004-08-31
申请人： Steven Roger Kennedy , Yuanda Cheng , Philip Corno , Francois Dary
发明人： Steven Roger Kennedy , Yuanda Cheng , Philip Corno , Francois Dary
IPC分类号： H01L21/203 , C23C14/34 , C23F1/00
CPC分类号： H01J37/3423 , C23C14/3407 , H01J37/3491
摘要： The effects of sputter re-deposition are reduced by macroscopically roughening the non-sputter areas of the sputter target. The macroscopic roughening is obtained by forming a macroscopic trough pattern in the non-sputter areas of the sputter target. A variety of patterns may be used for the trough pattern. In addition to macroscopically roughing the non-sputter areas of the sputter target, microscopic roughening of the trough patterns may be performed using conventional shot, bead or grit blasting techniques.
摘要翻译：通过宏观地粗糙化溅射靶的非溅射区域来减少溅射再沉积的影响。宏观粗糙化通过在溅射靶的非溅射区域中形成宏观凹槽图案而获得。凹槽图案可以使用各种图案。除了对溅射靶的非溅射区域进行宏观粗加工之外，可以使用常规的射击，珠粒或喷砂技术进行槽图案的微观粗糙化。

3. 发明申请

US20090134015A1 ENHANCED OXYGEN NON-STOICHIOMETRY COMPENSATION FOR THIN FILMS 审中-公开
标题翻译：用于薄膜的增强氧化物非晶体半导体补偿
公开(公告)号：US20090134015A1
公开(公告)日：2009-05-28
申请号：US12365855
申请日：2009-02-04
申请人： Michael Gene RACINE , Anirban Das , Steven Roger Kennedy , Yuanda R. Cheng
发明人： Michael Gene RACINE , Anirban Das , Steven Roger Kennedy , Yuanda R. Cheng
IPC分类号： C23C14/34
CPC分类号： G11B5/851 , G11B5/656
摘要： A method of manufacturing a magnetic recording medium, including the step of reactively or non-reactively sputtering at least a first data storing thin film layer over a substrate from a sputter target. The sputter target is comprised of cobalt (Co), platinum (Pt), a first metal oxide further comprised of a first metal and oxygen (O) and, when non-reactively sputtering, a second metal oxide. The first data storing thin film layer is comprised of cobalt (Co), platinum (Pt), and a stoichiometric third metal oxide comprising the first metal and oxygen (O). During sputtering, any non-stoichiometry of the third metal oxide in the first data storing thin film layer is compensated for using oxygen (O) from the second metal oxide in the sputter target, or using oxygen (O) from the oxygen-rich gas atmosphere. The first metal is selected from boron (B), silicon (Si), aluminum (Al), tantalum (Ta), niobium (Nb), hafnium (Hf), zirconium (Zr), titanium (Ti), tin (Sn), lanthanum (La), tungsten (W), cobalt (Co), yttrium (Y), chromium (Cr), cerium (Ce), europium (Eu), gadolinium (Gd), vanadium (V), samarium (Sm), praseodymium (Pr), manganese (Mn), iridium (Ir), rhenium (Re), nickel (Ni), and zinc (Zn). The sputter target is further comprised of chromium (Cr) and/or boron (B).
摘要翻译：一种制造磁记录介质的方法，包括从溅射靶在衬底上至少反射或非反应地溅射第一数据存储薄膜层的步骤。溅射靶由钴（Co），铂（Pt），还包含第一金属和氧（O）的第一金属氧化物组成，并且当非反应溅射时形成第二金属氧化物。第一数据存储薄膜层由钴（Co），铂（Pt）和包含第一金属和氧（O）的化学计量的第三金属氧化物组成。在溅射期间，使用来自溅射靶中的第二金属氧化物的氧（O）或使用来自富氧气体的氧（O）来补偿第一数据存储薄膜层中的第三金属氧化物的任何非化学计量大气层。第一金属选自硼（B），硅（Si），铝（Al），钽（Ta），铌（Nb），铪（Hf），锆（Zr），钛（Ti），镧（La），钨（W），钴（Co），钇（Y），铬（Cr），铈（Ce），铕（Eu），钆（Gd），钒（V），镨（Pr），锰（Mn），铱（Ir），铼（Re），镍（Ni）和锌（Zn）。溅射靶还包含铬（Cr）和/或硼（B）。

4. 发明申请

US20080170959A1 Full density Co-W magnetic sputter targets 审中-公开
标题翻译：全密度Co-W磁溅射靶
公开(公告)号：US20080170959A1
公开(公告)日：2008-07-17
申请号：US11653003
申请日：2007-01-11
申请人： Fenglin Yang , Bernd Kunkel , Steven Roger Kennedy , Anirban Das
发明人： Fenglin Yang , Bernd Kunkel , Steven Roger Kennedy , Anirban Das
IPC分类号： B22F3/24 , B22F3/12 , C22C19/07 , C22C27/04
CPC分类号： C23C14/3414 , B22F3/15 , B22F2999/00 , C22C1/0433 , C22C1/0441 , C22C1/045 , B22F3/1017 , B22F3/1028 , B22F2203/11 , B22F2203/13
摘要： A sputter target is provided with a first elemental phase of a first material, the first material being either cobalt or tungsten, a first intermetallic phase including the first material and a second material, the second material being either tungsten or cobalt and different from the first material, the first material in a greater atomic percentage than the second material, and a second intermetallic phase including the second material and the first material, the second material in a greater atomic percentage than the first material. The sputter target includes 20-80 at. % cobalt, and has a density greater than 99% of a theoretical maximum density thereof. The sputter target is fabricated by selecting a cobalt powder and a tungsten powder having the same particle size distribution, blending the cobalt powder and the tungsten powder to form a blended powder, canning the blended powder, hot pressing the blended powder to form a solid, and machining the solid to form a sputter target.
摘要翻译：溅射靶设置有第一材料的第一元素相，第一材料是钴或钨，第一金属间相包括第一材料和第二材料，第二材料是钨或钴，并且不同于第一材料材料，比第二材料具有更大原子百分比的第一材料，以及包括第二材料和第一材料的第二金属间相，第二材料的原子百分比大于第一材料。溅射靶包括20-80°。％的钴，并且其密度大于其理论最大密度的99％。通过选择具有相同粒度分布的钴粉末和钨粉末来制造溅射靶，混合钴粉末和钨粉末以形成混合粉末，罐装混合粉末，热压混合粉末以形成固体，并加工固体以形成溅射靶。

5. 发明申请

US20080057350A1 Magnetic media and sputter targets with compositions of high anisotropy alloys and oxide compounds 审中-公开
标题翻译：具有高各向异性合金和氧化物组成的磁介质和溅射靶
公开(公告)号：US20080057350A1
公开(公告)日：2008-03-06
申请号：US11514175
申请日：2006-09-01
申请人： Anirban Das , Michael Gene Racine , Steven Roger Kennedy
发明人： Anirban Das , Michael Gene Racine , Steven Roger Kennedy
IPC分类号： G11B5/65
CPC分类号： C23C14/3414 , G11B5/65 , G11B5/851
摘要： A magnetic data storage layer includes a high-Ku alloy and an oxide compound of oxygen and either a single element or an alloy. Because of their high Ku, the magnetic domains of this magnetic data storage layer can be made significantly smaller, while maintaining an acceptable thermal stability ratio of about 50 to 70, to provide areal densities of greater than 200 Gb/in2. Sputter targets for sputtering such a magnetic data storage layer are also provided. The sputter targets include the high-Ku alloy and either the desired oxide compounds, or the elements to be oxidized in a reactive sputtering process. The high-Ku alloy has an anisotropy constant of at least 0.5×107 ergs/cm3.
摘要翻译：磁数据存储层包括高K>合金和氧的氧化物化合物，以及单一元素或合金。由于它们的高K u>>，，，，，，200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 Gb / in ^{2 。还提供了溅射这种磁数据存储层的溅射靶。溅射靶包括高Ku合金和所需的氧化物化合物，或者在反应性溅射工艺中被氧化的元素。高K>合金的各向异性常数至少为0.5×10 7 ergs / cm 3。}

6. 发明申请

US20080166596A1 RE-BASED ALLOYS USABLE AS DEPOSITION TARGETS FOR FORMING INTERLAYERS IN GRANULAR PERPENDICULAR MAGNETIC RECORDING MEDIA & MEDIA UTILIZING SAID ALLOYS 审中-公开
标题翻译：基于合金的复合材料可用作形成中间层的粒度均匀磁记录介质和介质的沉积合金
公开(公告)号：US20080166596A1
公开(公告)日：2008-07-10
申请号：US11877587
申请日：2007-10-23
申请人： Anirban DAS , Michael Gene Racine , Makoto Imakawa , Steven Roger Kennedy , Rikhit Arora
发明人： Anirban DAS , Michael Gene Racine , Makoto Imakawa , Steven Roger Kennedy , Rikhit Arora
IPC分类号： G11B5/66 , B05D5/00 , C22C28/00 , C23C14/34
CPC分类号： G11B5/7325 , C22C1/06 , C22C27/00 , C23C14/3414 , G11B5/8404 , G11B5/851 , H01F41/18
摘要： A Re-based alloy material comprises >50 at. % Re and at least one alloying material selected from grain size refinement elements X which have an atomic radius larger or smaller than that of Re and a solid solubility
摘要翻译： Re基合金材料包括> 50英寸％Re和至少一种选自晶粒尺寸细化元素X的合金材料，其原子半径大于或小于Re的原子半径和固溶度<〜6at。在室温或更高温度下的hcp Re中的％，以及原子半径大于或小于Re的晶格匹配元素Y，并且在室温或更高温度下在hcp Re中形成固溶体。合金材料还可以包括选自氧化物，氮化物和碳化物中的至少一种材料。包含Re基合金材料的靶可用于溅射沉积改进的夹层以获得最佳结构化的粒状垂直磁记录层。

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