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1. 发明授权

US07998828B2 Method of forming metal ion transistor 失效
标题翻译：形成金属离子晶体管的方法
公开(公告)号：US07998828B2
公开(公告)日：2011-08-16
申请号：US12725817
申请日：2010-03-17
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L21/34 , H01L29/12 , H01L27/148 , H01L51/40 , H01L21/335 , H01L21/8232 , H01L21/339 , H01L21/00 , H01L21/84 , H01L21/76 , H01L21/20 , H01L21/36
CPC分类号： H01L45/00
摘要： A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell region of a low dielectric constant (low-k) dielectric over the first electrode in the second isolation layer, the first cell region isolated from the second isolation layer; forming a cap layer over the second isolation layer and the first cell region, at least thinning the cap layer over the first cell region; depositing a layer of the low-k dielectric over the second isolation layer and the first cell region; forming metal ions in the low-k dielectric layer; patterning the low-k dielectric layer to form a second cell region; sealing the second cell region using a liner; and forming a second electrode contacting the second cell region and a third electrode contacting the second cell region.
摘要翻译：一种形成金属离子晶体管的方法包括在第一隔离层中形成第一电极; 在所述第一隔离层上形成第二隔离层; 在所述第二隔离层中的所述第一电极上形成低介电常数（低k）电介质的第一电池区，所述第一电池区与所述第二隔离层隔离; 在所述第二隔离层和所述第一单元区域上形成盖层，至少使所述盖层在所述第一单元区域上变薄; 在所述第二隔离层和所述第一单元区域上沉积所述低k电介质层; 在低k电介质层中形成金属离子; 图案化低k电介质层以形成第二电池区; 使用衬垫密封第二电池区域; 以及形成与第二单元区域接触的第二电极和与第二单元区域接触的第三电极。

2. 发明申请

US20080173975A1 PROGRAMMABLE RESISTOR, SWITCH OR VERTICAL MEMORY CELL 审中-公开
标题翻译：可编程电阻器，开关或垂直存储器单元
公开(公告)号：US20080173975A1
公开(公告)日：2008-07-24
申请号：US11625607
申请日：2007-01-22
申请人： Fen Chen , Armin Fischer , Jason P. Gill
发明人： Fen Chen , Armin Fischer , Jason P. Gill
IPC分类号： H01L29/00 , H01L21/02
CPC分类号： H01L45/1266 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/1616 , H01L45/1683
摘要： Disclosed are embodiments of a device and method of forming the device that utilize metal ion migration under controllable conditions. The device embodiments comprise two metal electrodes separated by one or more different dielectric materials. One electrode is sealed from the dielectric material, the other is not. The device is adapted to allow controlled migration of embedded metal ions from the unsealed electrode into dielectric material to form a conductive path under field between the electrodes and, thereby, to decrease the resistance of the dielectric material. Reversing the field causes the metal ions to reverse their migration, to break the conductive metallic path between the electrodes and, thereby, to increase the resistance of the dielectric material. Thus, the device can comprise a simple switch or programmable resistor. Additionally, by monitoring the resistance change, a two-state, two-terminal, silicon technology-compatible, flash memory device with a very simple tuning process can be created.
摘要翻译：披露了在可控条件下形成利用金属离子迁移的装置的装置和方法的实施例。器件实施例包括由一种或多种不同电介质材料隔开的两个金属电极。一个电极与介电材料密封，另一个不是。该器件适于允许将嵌入的金属离子从非密封电极受控地迁移到电介质材料中，以形成电极之间的导电路径，从而降低电介质材料的电阻。反转场导致金属离子反向迁移，以破坏电极之间的导电金属路径，从而增加电介质材料的电阻。因此，该装置可以包括简单的开关或可编程电阻器。另外，通过监控电阻变化，可以创建具有非常简单的调整过程的两状态，两端，硅技术兼容的闪存器件。

3. 发明授权

US07859025B2 Metal ion transistor 有权
标题翻译：金属离子晶体管
公开(公告)号：US07859025B2
公开(公告)日：2010-12-28
申请号：US11951579
申请日：2007-12-06
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L45/00
CPC分类号： H01L45/00
摘要： A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.
摘要翻译：公开了一种金属离子晶体管及相关方法。在一个实施例中，金属离子晶体管包括位于至少一个隔离层中的电池，该电池包括从每个相邻隔离层密封的金属离子掺杂低介电常数（低k）电介质材料; 在第一侧上与第一电极接触的第一电极; 在第二侧接触所述电池的第二电极; 以及在第三侧与第一电极接触的第三电极，其中每个电极彼此隔离。

4. 发明申请

US20100184280A1 METHOD OF FORMING METAL ION TRANSISTOR 失效
标题翻译：形成金属离子晶体管的方法
公开(公告)号：US20100184280A1
公开(公告)日：2010-07-22
申请号：US12725817
申请日：2010-03-17
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L21/335
CPC分类号： H01L45/00
摘要： A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell region of a low dielectric constant (low-k) dielectric over the first electrode in the second isolation layer, the first cell region isolated from the second isolation layer; forming a cap layer over the second isolation layer and the first cell region, at least thinning the cap layer over the first cell region; depositing a layer of the low-k dielectric over the second isolation layer and the first cell region; forming metal ions in the low-k dielectric layer; patterning the low-k dielectric layer to form a second cell region; sealing the second cell region using a liner; and forming a second electrode contacting the second cell region and a third electrode contacting the second cell region.
摘要翻译：一种形成金属离子晶体管的方法包括在第一隔离层中形成第一电极; 在所述第一隔离层上形成第二隔离层; 在所述第二隔离层中的所述第一电极上形成低介电常数（低k）电介质的第一电池区，所述第一电池区与所述第二隔离层隔离; 在所述第二隔离层和所述第一单元区域上形成盖层，至少使所述盖层在所述第一单元区域上变薄; 在所述第二隔离层和所述第一单元区域上沉积所述低k电介质层; 在低k电介质层中形成金属离子; 图案化低k电介质层以形成第二电池区; 使用衬垫密封第二电池区域; 以及形成与第二单元区域接触的第二电极和与第二单元区域接触的第三电极。

5. 发明申请

US20090146242A1 METAL ION TRANSISTOR AND RELATED METHODS 有权
标题翻译：金属离子晶体管及相关方法
公开(公告)号：US20090146242A1
公开(公告)日：2009-06-11
申请号：US11951579
申请日：2007-12-06
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L29/00 , H01L21/425
CPC分类号： H01L45/00
摘要： A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.
摘要翻译：公开了一种金属离子晶体管及相关方法。在一个实施例中，金属离子晶体管包括位于至少一个隔离层中的电池，该电池包括从每个相邻隔离层密封的金属离子掺杂低介电常数（低k）电介质材料; 在第一侧上与第一电极接触的第一电极; 在第二侧接触所述电池的第二电极; 以及在第三侧与第一电极接触的第三电极，其中每个电极彼此隔离。

6. 发明授权

US08917104B2 Analyzing EM performance during IC manufacturing 有权
标题翻译：分析IC制造过程中的EM性能
公开(公告)号：US08917104B2
公开(公告)日：2014-12-23
申请号：US13222306
申请日：2011-08-31
申请人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
发明人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
IPC分类号： G01R31/3187 , G01R31/28
CPC分类号： G01R31/2858
摘要： A testing structure, system and method for monitoring electro-migration (EM) performance. A system is described that includes an array of testing structures, wherein each testing structure includes: an EM resistor having four point resistive measurement, wherein a first and second terminals provide current input and a third and fourth terminals provide a voltage measurement; a first transistor coupled to a first terminal of the EM resistor for supplying a test current; the voltage measurement obtained from a pair of switching transistors whose gates are controlled by a selection switch and whose drains are utilized to provide a voltage measurement across the third and fourth terminals. Also included is a decoder for selectively activating the selection switch for one of the array of testing structures; and a pair of outputs for outputting the voltage measurement of a selected testing structure.
摘要翻译：用于监测电迁移（EM）性能的测试结构，系统和方法。描述了包括测试结构阵列的系统，其中每个测试结构包括：具有四点电阻测量的EM电阻器，其中第一和第二端子提供电流输入，第三和第四端子提供电压测量; 耦合到所述EM电阻器的第一端子以提供测试电流的第一晶体管; 由一对开关晶体管获得的电压测量，其栅极由选择开关控制，并且其漏极用于在第三和第四端子处提供电压测量。还包括用于选择性地激活测试结构阵列之一的选择开关的解码器; 以及用于输出所选择的测试结构的电压测量的一对输出。

7. 发明授权

US08754655B2 Test structure, method and circuit for simultaneously testing time dependent dielectric breakdown and electromigration or stress migration 失效
标题翻译：测试结构，方法和电路，用于同时测试时间依赖介电击穿和电迁移或应力迁移
公开(公告)号：US08754655B2
公开(公告)日：2014-06-17
申请号：US13207485
申请日：2011-08-11
申请人： David G. Brochu, Jr. , Fen Chen , Roger A. Dufresne , Travis S. Merrill , Michael A. Shinosky
发明人： David G. Brochu, Jr. , Fen Chen , Roger A. Dufresne , Travis S. Merrill , Michael A. Shinosky
IPC分类号： G01R31/02
CPC分类号： G01R31/2858
摘要： Test structures for simultaneously testing for electromigration or stress migration fails and time dependent dielectric breakdown fails in integrated circuits, test circuits using four test structures arranged as a bridge balance circuit and methods of testing using the test circuits. The electromigration or stress migration portions of the test structures include via chains of wire segments connected in series by electrically conductive vias, the wire segments formed in at least two adjacent wiring levels of an integrated circuit. The time dependent dielectric breakdown portions of the test structures include digitized wire structures in one of the at least two adjacent wiring levels adjacent to a less than whole portion of the wire segments in the same wiring level as the digitized wire structures.
摘要翻译：用于同时测试电迁移或应力迁移的测试结构在集成电路中的时间依赖介质击穿失效，使用布置为桥接平衡电路的四个测试结构的测试电路和使用测试电路的测试方法。测试结构的电迁移或应力迁移部分包括通过导电通孔串联连接的导线段的通孔链，形成在集成电路的至少两个相邻布线层中的线段。测试结构的时间依赖介质击穿部分包括在与数字化的线结构相同的布线级别中与所述线段的少于整个部分相邻的所述至少两个相邻布线层之一中的数字化线结构。

8. 发明授权

US08470379B2 Use of a potent product extracted from rhizomes of zingiber officinale in treating a disease associated with Helicobacter pylori 有权
标题翻译：使用从姜黄根茎提取的有效产品治疗与幽门螺杆菌相关的疾病
公开(公告)号：US08470379B2
公开(公告)日：2013-06-25
申请号：US12911143
申请日：2010-10-25
申请人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
发明人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
IPC分类号： A61K36/9068
CPC分类号： A61K36/9068
摘要： A new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a normal phase chromatography column, and eluting the column with a first eluent having a polarity lower than that of a mixture of n-hexane and ethyl acetate in a weight ratio of 6:4 to obtain a potent fraction. Preferably, the potent fraction is substantially free of both 6-gingerol and 6-shogaol.
摘要翻译：从姜黄根茎提取的有效产品的新用途，用于治疗与幽门螺杆菌相关的疾病，如胃炎，胃溃疡或十二指肠溃疡。所述有效产物通过以下步骤制备，所述方法包括以下步骤：a）从姜黄根茎制备粗提取物，所述粗提物包含6-姜醇和6-shogaol; b）将粗提取物引入正相色谱柱，并用具有极性低于正己烷和乙酸乙酯的混合物的第一洗脱液以6:4的重量比洗脱柱，以获得有效分数。优选地，有效部分基本上不含6-姜醇和6-硫醇。

9. 发明申请

US20120299188A1 WIRING STRUCTURE AND METHOD OF FORMING THE STRUCTURE 有权
标题翻译：导线结构及形成结构的方法
公开(公告)号：US20120299188A1
公开(公告)日：2012-11-29
申请号：US13114079
申请日：2011-05-24
申请人： Fen Chen , Jeffrey P. Gambino , Anthony K. Stamper , Timothy D. Sullivan
发明人： Fen Chen , Jeffrey P. Gambino , Anthony K. Stamper , Timothy D. Sullivan
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/76816 , H01L21/76843 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a wiring structure and method of forming the structure with a conductive diffusion barrier layer having a thick upper portion and thin lower portion. The thicker upper portion is located at the junction between the wiring structure and the adjacent dielectric materials. The thicker upper portion: (1) minimizes metal ion diffusion and, thereby TDDB; (2) allows a wire width to dielectric space width ratio that is optimal for low TDDB to be achieved at the top of the wiring structure; and (3) provides a greater surface area for via landing. The thinner lower portion: (1) allows a different wire width to dielectric space width ratio to be maintained in the rest of the wiring structure in order to balance other competing factors; (2) allows a larger cross-section of wire to reduce current density and, thereby reduce EM; and (3) avoids an increase in wiring structure resistivity.
摘要翻译：公开了一种具有导电扩散阻挡层的结构的布线结构和方法，所述导电扩散阻挡层具有较厚的上部和较薄的下部。较厚的上部位于布线结构和相邻电介质材料之间的接合处。较厚的上部：（1）最小化金属离子扩散，从而使TDDB; （2）允许在布线结构的顶部实现对于低TDDB最佳的电线宽度与电介质空间宽度比; 和（3）为通孔着陆提供更大的表面积。较薄的下部：（1）允许在布线结构的其余部分中保持不同的导线宽度与电介质空间宽度比，以平衡其他竞争因素; （2）允许更大的导线截面减小电流密度，从而减少EM; 和（3）避免了布线结构电阻率的增加。

10. 发明申请

US20120218030A1 METHOD FOR MANAGING CIRCUIT RELIABILITY 失效
标题翻译：管理电路可靠性的方法
公开(公告)号：US20120218030A1
公开(公告)日：2012-08-30
申请号：US13034758
申请日：2011-02-25
申请人： Fen Chen , Kai D. Feng , Zhong-Xiang He
发明人： Fen Chen , Kai D. Feng , Zhong-Xiang He
IPC分类号： H03K19/003
CPC分类号： H03K19/00307
摘要： Managing reliability of a circuit that includes a plurality of duplicate components, with less than all of the components being active at any time during circuit operation, where reliability is managed by operating, by the circuit, with a first set of components that includes a predefined number of components; selecting, without altering circuit performance and in accordance with a circuit reliability protocol, a second set of components with which to operate, including activating an inactive component and deactivating an active component of the first set of components; and operating, by the circuit, with the second set of components.
摘要翻译：管理包括多个重复部件的电路的可靠性，其中小于所有组件在电路操作期间的任何时间处于活动状态，其中可靠性由电路通过第一组组件来管理，该组件包括预定义的组件数量; 根据电路可靠性协议选择不改变电路性能的第二组组件，包括激活非活动组件和去激活第一组组件的活动组件; 并通过电路与第二组元件一起操作。

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