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1. 发明授权

US07859025B2 Metal ion transistor 有权
标题翻译：金属离子晶体管
公开(公告)号：US07859025B2
公开(公告)日：2010-12-28
申请号：US11951579
申请日：2007-12-06
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L45/00
CPC分类号： H01L45/00
摘要： A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.
摘要翻译：公开了一种金属离子晶体管及相关方法。在一个实施例中，金属离子晶体管包括位于至少一个隔离层中的电池，该电池包括从每个相邻隔离层密封的金属离子掺杂低介电常数（低k）电介质材料; 在第一侧上与第一电极接触的第一电极; 在第二侧接触所述电池的第二电极; 以及在第三侧与第一电极接触的第三电极，其中每个电极彼此隔离。

2. 发明申请

US20100184280A1 METHOD OF FORMING METAL ION TRANSISTOR 失效
标题翻译：形成金属离子晶体管的方法
公开(公告)号：US20100184280A1
公开(公告)日：2010-07-22
申请号：US12725817
申请日：2010-03-17
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L21/335
CPC分类号： H01L45/00
摘要： A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell region of a low dielectric constant (low-k) dielectric over the first electrode in the second isolation layer, the first cell region isolated from the second isolation layer; forming a cap layer over the second isolation layer and the first cell region, at least thinning the cap layer over the first cell region; depositing a layer of the low-k dielectric over the second isolation layer and the first cell region; forming metal ions in the low-k dielectric layer; patterning the low-k dielectric layer to form a second cell region; sealing the second cell region using a liner; and forming a second electrode contacting the second cell region and a third electrode contacting the second cell region.
摘要翻译：一种形成金属离子晶体管的方法包括在第一隔离层中形成第一电极; 在所述第一隔离层上形成第二隔离层; 在所述第二隔离层中的所述第一电极上形成低介电常数（低k）电介质的第一电池区，所述第一电池区与所述第二隔离层隔离; 在所述第二隔离层和所述第一单元区域上形成盖层，至少使所述盖层在所述第一单元区域上变薄; 在所述第二隔离层和所述第一单元区域上沉积所述低k电介质层; 在低k电介质层中形成金属离子; 图案化低k电介质层以形成第二电池区; 使用衬垫密封第二电池区域; 以及形成与第二单元区域接触的第二电极和与第二单元区域接触的第三电极。

3. 发明申请

US20090146242A1 METAL ION TRANSISTOR AND RELATED METHODS 有权
标题翻译：金属离子晶体管及相关方法
公开(公告)号：US20090146242A1
公开(公告)日：2009-06-11
申请号：US11951579
申请日：2007-12-06
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L29/00 , H01L21/425
CPC分类号： H01L45/00
摘要： A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.
摘要翻译：公开了一种金属离子晶体管及相关方法。在一个实施例中，金属离子晶体管包括位于至少一个隔离层中的电池，该电池包括从每个相邻隔离层密封的金属离子掺杂低介电常数（低k）电介质材料; 在第一侧上与第一电极接触的第一电极; 在第二侧接触所述电池的第二电极; 以及在第三侧与第一电极接触的第三电极，其中每个电极彼此隔离。

4. 发明授权

US07998828B2 Method of forming metal ion transistor 失效
标题翻译：形成金属离子晶体管的方法
公开(公告)号：US07998828B2
公开(公告)日：2011-08-16
申请号：US12725817
申请日：2010-03-17
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L21/34 , H01L29/12 , H01L27/148 , H01L51/40 , H01L21/335 , H01L21/8232 , H01L21/339 , H01L21/00 , H01L21/84 , H01L21/76 , H01L21/20 , H01L21/36
CPC分类号： H01L45/00
摘要： A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell region of a low dielectric constant (low-k) dielectric over the first electrode in the second isolation layer, the first cell region isolated from the second isolation layer; forming a cap layer over the second isolation layer and the first cell region, at least thinning the cap layer over the first cell region; depositing a layer of the low-k dielectric over the second isolation layer and the first cell region; forming metal ions in the low-k dielectric layer; patterning the low-k dielectric layer to form a second cell region; sealing the second cell region using a liner; and forming a second electrode contacting the second cell region and a third electrode contacting the second cell region.
摘要翻译：一种形成金属离子晶体管的方法包括在第一隔离层中形成第一电极; 在所述第一隔离层上形成第二隔离层; 在所述第二隔离层中的所述第一电极上形成低介电常数（低k）电介质的第一电池区，所述第一电池区与所述第二隔离层隔离; 在所述第二隔离层和所述第一单元区域上形成盖层，至少使所述盖层在所述第一单元区域上变薄; 在所述第二隔离层和所述第一单元区域上沉积所述低k电介质层; 在低k电介质层中形成金属离子; 图案化低k电介质层以形成第二电池区; 使用衬垫密封第二电池区域; 以及形成与第二单元区域接触的第二电极和与第二单元区域接触的第三电极。

5. 发明申请

US20080173975A1 PROGRAMMABLE RESISTOR, SWITCH OR VERTICAL MEMORY CELL 审中-公开
标题翻译：可编程电阻器，开关或垂直存储器单元
公开(公告)号：US20080173975A1
公开(公告)日：2008-07-24
申请号：US11625607
申请日：2007-01-22
申请人： Fen Chen , Armin Fischer , Jason P. Gill
发明人： Fen Chen , Armin Fischer , Jason P. Gill
IPC分类号： H01L29/00 , H01L21/02
CPC分类号： H01L45/1266 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/1616 , H01L45/1683
摘要： Disclosed are embodiments of a device and method of forming the device that utilize metal ion migration under controllable conditions. The device embodiments comprise two metal electrodes separated by one or more different dielectric materials. One electrode is sealed from the dielectric material, the other is not. The device is adapted to allow controlled migration of embedded metal ions from the unsealed electrode into dielectric material to form a conductive path under field between the electrodes and, thereby, to decrease the resistance of the dielectric material. Reversing the field causes the metal ions to reverse their migration, to break the conductive metallic path between the electrodes and, thereby, to increase the resistance of the dielectric material. Thus, the device can comprise a simple switch or programmable resistor. Additionally, by monitoring the resistance change, a two-state, two-terminal, silicon technology-compatible, flash memory device with a very simple tuning process can be created.
摘要翻译：披露了在可控条件下形成利用金属离子迁移的装置的装置和方法的实施例。器件实施例包括由一种或多种不同电介质材料隔开的两个金属电极。一个电极与介电材料密封，另一个不是。该器件适于允许将嵌入的金属离子从非密封电极受控地迁移到电介质材料中，以形成电极之间的导电路径，从而降低电介质材料的电阻。反转场导致金属离子反向迁移，以破坏电极之间的导电金属路径，从而增加电介质材料的电阻。因此，该装置可以包括简单的开关或可编程电阻器。另外，通过监控电阻变化，可以创建具有非常简单的调整过程的两状态，两端，硅技术兼容的闪存器件。

6. 发明授权

US08323991B2 Method for detecting stress migration properties 有权
标题翻译：检测应力迁移特性的方法
公开(公告)号：US08323991B2
公开(公告)日：2012-12-04
申请号：US12980829
申请日：2010-12-29
申请人： Armin Fischer , Alexander Von Glasow , Jochen Von Hagen
发明人： Armin Fischer , Alexander Von Glasow , Jochen Von Hagen
IPC分类号： G01R31/26 , G01R27/08
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure includes a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer. The IH device includes a heating interconnect region through which a heating current flows. The heating interconnect region is within or outside the first or second interconnect region or connecting region. When the heating current is applied, a measurement voltage is applied to the SMT structure, and a current through the SMT structure is measured to detect stress migration properties of the semiconductor module.
摘要翻译：提供了一种用于检测安装在壳体中的半导体模块的应力迁移特性的装置和方法。在半导体模块中形成应力迁移试验（SMT）结构。集成加热（IH）装置形成在SMT结构内或者直接靠近SMT结构。 SMT结构包括第一互连层中的第一互连区域，第二互连层中的第二互连区域和通过第一绝缘层电连接互连区域的连接区域。 IH装置包括加热互连区域，加热电流流过该区域。加热互连区域在第一或第二互连区域或连接区域内或之外。当施加加热电流时，向SMT结构施加测量电压，并且测量通过SMT结构的电流以检测半导体模块的应力迁移特性。

7. 发明授权

US5616966A Anti-theft system for a motor vehicle 失效
标题翻译：汽车防盗系统
公开(公告)号：US5616966A
公开(公告)日：1997-04-01
申请号：US554821
申请日：1995-11-07
申请人： Armin Fischer , Stefan Haimerl , Manfred Glehr
发明人： Armin Fischer , Stefan Haimerl , Manfred Glehr
IPC分类号： G07C9/00 , E05B47/00
CPC分类号： G07C9/00309 , G07C2009/00777 , Y10S70/46
摘要： An anti-theft system for a motor vehicle includes a portable transponder carrying code information. A stationary transceiver has an oscillator and an oscillating circuit being excited to oscillate by the oscillator at an oscillation being modulated by the transponder in synchronism with the code information. A demodulator demodulates the modulated oscillation of the oscillating circuit. According to one embodiment, the code information is obtained from the demodulated oscillation by sampling the oscillation at least at one predetermined sampling time. An arithmetic unit compares the code information with command code information and transmits an enable signal to a security unit if a match occurs. The modulated oscillation being shifted by a predetermined phase angle is sampled once again if initially no code information is recognized from the demodulator. According to another embodiment, the modulated oscillation containing the code information is sampled at least at two predetermined times being phase-shifted from one another by a predetermined phase angle and the code information is obtained from voltage values detected at the sampling times. The arithmetic unit compares the code information with the command code information and transmits an enable signal to a security unit if a match occurs.
摘要翻译：用于机动车辆的防盗系统包括携带代码信息的便携式转发器。固定收发器具有振荡器，并且振荡电路被激励以由振荡器以与代码信息同步的由应答器调制的振荡来振荡。解调器解调振荡电路的调制振荡。根据一个实施例，通过至少在一个预定采样时间对振荡进行采样从解调振荡中获得码信息。算术单元将代码信息与命令代码信息进行比较，并且如果匹配发生，则向安全单元发送使能信号。如果最初没有从解调器识别出代码信息，则调制振荡被移位预定相位角再次被采样。根据另一个实施例，包含码信息的调制振荡至少在两个预定时间采样，彼此相移一个预定的相位角，并且从采样时间检测的电压值获得码信息。算术单元将代码信息与命令代码信息进行比较，并且如果匹配发生，则向安全单元发送使能信号。

8. 发明申请

US20110140236A1 Integrated Circuit with Pads Connected by an Under-Bump Metallization and Method for Production Thereof 有权
标题翻译：集成电路与通过底部金属化连接的垫片及其生产方法
公开(公告)号：US20110140236A1
公开(公告)日：2011-06-16
申请号：US13032248
申请日：2011-02-22
申请人： Armin Fischer , Alexander Von Glasow
发明人： Armin Fischer , Alexander Von Glasow
IPC分类号： H01L23/525
CPC分类号： H01L23/525 , H01L24/02 , H01L24/10 , H01L2224/0401 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： A semiconductor device includes a semiconductor chip. External connection pads and further pads are disposed over a surface of the semiconductor chip. Selected ones of the further pads are electrically connected to one another so as to activate selected functions within the semiconductor chip.
摘要翻译：半导体器件包括半导体芯片。外部连接焊盘和另外的焊盘设置在半导体芯片的表面上。所选择的另外的焊盘彼此电连接，以激活半导体芯片内的所选功能。

9. 发明授权

US07079375B2 Set of integrated capacitor arrangements, especially integrated grid capacitors 有权
公开(公告)号：US07079375B2
公开(公告)日：2006-07-18
申请号：US10520742
申请日：2003-06-12
申请人： Armin Fischer , Franz Ungar
发明人： Armin Fischer , Franz Ungar
IPC分类号： H01G4/38
CPC分类号： H01L27/0805
摘要： A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an electrically conductive antifuse connection and antifuse interruption between the correction capacitor and the main capacitor, which are produced after the main capacitor has been formed. The connection and interruption enable the capacitance of the capacitor arrangement to be corrected.

10. 发明申请

US20050275103A1 Integrated circuit comprising intermediate materials and corresponding components 有权
标题翻译：集成电路包括中间材料和相应的部件
公开(公告)号：US20050275103A1
公开(公告)日：2005-12-15
申请号：US10526881
申请日：2003-09-14
申请人： Armin Fischer , Alexander Von Glasow
发明人： Armin Fischer , Alexander Von Glasow
IPC分类号： G06F17/50 , H01L21/768 , H01L21/82 , H01L23/522 , H01L23/48
CPC分类号： H01L23/5226 , G06F17/5068 , H01L21/76841 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit arrangement having a metallization layer, an interconnect dielectric, electrically conductive interconnect intermediate material electrically conductive connecting sections, connecting section dielectric between the connecting sections and connecting section intermediate material. The metallization layer contains electrically conductive interconnects between which the interconnect dielectric is disposed. The electrically conductive interconnect intermediate material is arranged between a side area of an interconnect and the interconnect dielectric. The electrically conductive connecting sections in each case form a section of an electrically conductive connection to or from an interconnect and the connecting section dielectric is between the connecting sections. The connecting section intermediate material is arranged in each case between a connecting section and the connecting section dielectric and/or between a connecting section and an interconnect. The interconnect intermediate material and the connecting section intermediate material make contact with one another at at least one connection.
摘要翻译：一种具有金属化层，互连电介质，导电互连中间材料导电连接部分，连接部分之间的连接部分电介质和连接部分中间材料的集成电路装置。金属化层包含布置有互连电介质的导电互连。导电互连中间材料布置在互连的侧面区域和互连电介质之间。导电连接部分在每种情况下都形成与互连件相互导电连接的部分，并且连接部分电介质位于连接部分之间。连接部分中间材料分别布置在连接部分和连接部分电介质之间和/或连接部分和互连件之间。互连中间材料和连接部分中间材料在至少一个连接处彼此接触。

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