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1. 发明授权

US08917104B2 Analyzing EM performance during IC manufacturing 有权
标题翻译：分析IC制造过程中的EM性能
公开(公告)号：US08917104B2
公开(公告)日：2014-12-23
申请号：US13222306
申请日：2011-08-31
申请人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
发明人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
IPC分类号： G01R31/3187 , G01R31/28
CPC分类号： G01R31/2858
摘要： A testing structure, system and method for monitoring electro-migration (EM) performance. A system is described that includes an array of testing structures, wherein each testing structure includes: an EM resistor having four point resistive measurement, wherein a first and second terminals provide current input and a third and fourth terminals provide a voltage measurement; a first transistor coupled to a first terminal of the EM resistor for supplying a test current; the voltage measurement obtained from a pair of switching transistors whose gates are controlled by a selection switch and whose drains are utilized to provide a voltage measurement across the third and fourth terminals. Also included is a decoder for selectively activating the selection switch for one of the array of testing structures; and a pair of outputs for outputting the voltage measurement of a selected testing structure.
摘要翻译：用于监测电迁移（EM）性能的测试结构，系统和方法。描述了包括测试结构阵列的系统，其中每个测试结构包括：具有四点电阻测量的EM电阻器，其中第一和第二端子提供电流输入，第三和第四端子提供电压测量; 耦合到所述EM电阻器的第一端子以提供测试电流的第一晶体管; 由一对开关晶体管获得的电压测量，其栅极由选择开关控制，并且其漏极用于在第三和第四端子处提供电压测量。还包括用于选择性地激活测试结构阵列之一的选择开关的解码器; 以及用于输出所选择的测试结构的电压测量的一对输出。

2. 发明申请

US20140062519A1 HIGH-FREQUENCY COBRA PROBE 有权
标题翻译：高频COBRA探头
公开(公告)号：US20140062519A1
公开(公告)日：2014-03-06
申请号：US13605170
申请日：2012-09-06
申请人： Hanyi DING , John FERRARIO , Barton E. GREEN , Richard J. ST. PIERRE
发明人： Hanyi DING , John FERRARIO , Barton E. GREEN , Richard J. ST. PIERRE
IPC分类号： G01R1/067 , H05K13/00
CPC分类号： G01R1/07357 , Y10T29/49117
摘要： A test device including cobra probes and a method of manufacturing is disclosed. The test device includes a conductive upper plate having an upper guide hole and a conductive lower plate having a lower guide hole. The test device also includes a conductive cobra probe disposed between the upper guide hole of the upper plate and the lower guide hole of the lower plate. A dielectric material insulates the cobra probe from the upper plate and the lower plate.
摘要翻译：公开了一种包括眼镜蛇探头和制造方法的测试装置。测试装置包括具有上引导孔的导电上板和具有下引导孔的导电下板。测试装置还包括设置在上板的上引导孔和下板的下引导孔之间的导电眼镜蛇探针。介电材料将眼镜蛇探头与上板和下板绝缘。

3. 发明授权

US08994393B2 High-frequency cobra probe 有权
标题翻译：高频眼镜蛇探头
公开(公告)号：US08994393B2
公开(公告)日：2015-03-31
申请号：US13605170
申请日：2012-09-06
申请人： Hanyi Ding , John Ferrario , Barton E. Green , Richard J. St. Pierre
发明人： Hanyi Ding , John Ferrario , Barton E. Green , Richard J. St. Pierre
IPC分类号： G01R1/067 , G01R1/073
CPC分类号： G01R1/07357 , Y10T29/49117
摘要： A test device including cobra probes and a method of manufacturing is disclosed. The test device includes a conductive upper plate having an upper guide hole and a conductive lower plate having a lower guide hole. The test device also includes a conductive cobra probe disposed between the upper guide hole of the upper plate and the lower guide hole of the lower plate. A dielectric material insulates the cobra probe from the upper plate and the lower plate.
摘要翻译：公开了一种包括眼镜蛇探头和制造方法的测试装置。测试装置包括具有上引导孔的导电上板和具有下引导孔的导电下板。测试装置还包括设置在上板的上引导孔和下板的下引导孔之间的导电眼镜蛇探针。介电材料将眼镜蛇探头与上板和下板绝缘。

4. 发明申请

US20130049793A1 ANALYZING EM PERFORMANCE DURING IC MANUFACTURING 有权
标题翻译：在IC制造过程中分析EM性能
公开(公告)号：US20130049793A1
公开(公告)日：2013-02-28
申请号：US13222306
申请日：2011-08-31
申请人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
发明人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
IPC分类号： G01R31/26 , G01R31/02
CPC分类号： G01R31/2858
摘要： A testing structure, system and method for monitoring electro-migration (EM) performance. A system is described that includes an array of testing structures, wherein each testing structure includes: an EM resistor having four point resistive measurement, wherein a first and second terminals provide current input and a third and fourth terminals provide a voltage measurement; a first transistor coupled to a first terminal of the EM resistor for supplying a test current; the voltage measurement obtained from a pair of switching transistors whose gates are controlled by a selection switch and whose drains are utilized to provide a voltage measurement across the third and fourth terminals. Also included is a decoder for selectively activating the selection switch for one of the array of testing structures; and a pair of outputs for outputting the voltage measurement of a selected testing structure.
摘要翻译：用于监测电迁移（EM）性能的测试结构，系统和方法。描述了包括测试结构阵列的系统，其中每个测试结构包括：具有四点电阻测量的EM电阻器，其中第一和第二端子提供电流输入，第三和第四端子提供电压测量; 耦合到所述EM电阻器的第一端子以提供测试电流的第一晶体管; 由一对开关晶体管获得的电压测量，其栅极由选择开关控制，并且其漏极用于在第三和第四端子处提供电压测量。还包括用于选择性地激活测试结构阵列之一的选择开关的解码器; 以及用于输出所选择的测试结构的电压测量的一对输出。

5. 发明授权

US08890556B2 Real-time on-chip EM performance monitoring 有权
标题翻译：实时片上EM性能监控
公开(公告)号：US08890556B2
公开(公告)日：2014-11-18
申请号：US13282090
申请日：2011-10-26
申请人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
发明人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
IPC分类号： G01R31/3187 , G01R31/30
CPC分类号： G01R31/3004
摘要： An integrated circuit, testing structure, and method for monitoring electro-migration (EM) performance. A method is described that includes method for measuring on-chip electro-migration (EM) performance, including: providing a first on-chip sensor continuously powered with a stress current; providing a second on-chip sensor that is powered only during measurement cycles with a nominal current; obtaining a first resistance measurement from the first on-chip sensor and a second resistance measurement from the second on-chip sensor during each of a series of measurement cycles; and processing the first and second resistance measurements.
摘要翻译：用于监测电迁移（EM）性能的集成电路，测试结构和方法。描述了一种包括用于测量片上电迁移（EM）性能的方法的方法，包括：提供用应力电流连续供电的第一片上传感器; 提供仅在具有额定电流的测量周期期间供电的第二片上传感器; 在一系列测量周期中的每一个期间，从第一片上传感器获得第一电阻测量值和来自第二片上传感器的第二电阻测量值; 并处理第一和第二电阻测量。

6. 发明申请

US20130106452A1 REAL-TIME ON-CHIP EM PERFORMANCE MONITORING 有权
标题翻译：实时片上EM性能监控
公开(公告)号：US20130106452A1
公开(公告)日：2013-05-02
申请号：US13282090
申请日：2011-10-26
申请人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
发明人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
IPC分类号： G01R31/3187
CPC分类号： G01R31/3004
摘要： An integrated circuit, testing structure, and method for monitoring electro-migration (EM) performance. A method is described that includes method for measuring on-chip electro-migration (EM) performance, including: providing a first on-chip sensor continuously powered with a stress current; providing a second on-chip sensor that is powered only during measurement cycles with a nominal current; obtaining a first resistance measurement from the first on-chip sensor and a second resistance measurement from the second on-chip sensor during each of a series of measurement cycles; and processing the first and second resistance measurements.
摘要翻译：用于监测电迁移（EM）性能的集成电路，测试结构和方法。描述了一种包括用于测量片上电迁移（EM）性能的方法的方法，包括：提供用应力电流连续供电的第一片上传感器; 提供仅在具有额定电流的测量周期期间供电的第二片上传感器; 在一系列测量周期中的每一个期间，从第一片上传感器获得第一电阻测量值和来自第二片上传感器的第二电阻测量值; 并处理第一和第二电阻测量。

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