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1. 发明申请

US20060046521A1 Deposition methods using heteroleptic precursors 有权
标题翻译：使用杂音前体的沉积方法
公开(公告)号：US20060046521A1
公开(公告)日：2006-03-02
申请号：US10932149
申请日：2004-09-01
申请人： Brian Vaartstra , Donald Westmoreland , Eugene Marsh , Stefan Uhlenbrock
发明人： Brian Vaartstra , Donald Westmoreland , Eugene Marsh , Stefan Uhlenbrock
IPC分类号： H01L21/31
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/405 , H01L21/0228 , H01L21/3141
摘要： An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
摘要翻译： ALD方法包括将底物暴露于包含多个不同配体的第一前体，化学吸附底物上的前体单层，以及使第二前体与前体单层反应以产生产物单层。表面反应性配体表现出超过气体反应性配体显示的化学吸附亲和力的化学吸附亲和力。另一种沉积方法包括将底物暴露于含有氨基和/或亚氨基配体和卤化物配体的前体并沉积一层。前体表现出挥发性，其挥发性用卤化物配体取代每个氨基和/或亚氨基配体。前体表现出超过热稳定性的热稳定性，氨基和/或亚氨基配体取代每个卤化物配体。该层可以表现出比卤化物配体更少的卤素含量，代替每个氨基和/或亚氨基配体。

2. 发明申请

US20050016869A1 Systems and methods for the electrolytic removal of metals from substrates 审中-公开
标题翻译：从基材中电解去除金属的系统和方法
公开(公告)号：US20050016869A1
公开(公告)日：2005-01-27
申请号：US10923478
申请日：2004-08-20
申请人： Eugene Marsh , Stefan Uhlenbrock , Donald Westmoreland
发明人： Eugene Marsh , Stefan Uhlenbrock , Donald Westmoreland
IPC分类号： B23H3/00 , B23H5/08 , B23H9/00 , C25F3/02 , C25F5/00 , H01L21/00 , C25F7/00
CPC分类号： C25F5/00 , B23H3/00 , B23H5/08 , B23H9/00 , C25F3/02
摘要： The present invention provides methods and systems for the electrolytic removal of platinum and/or other of the Group 8-11 metals from substrates.
摘要翻译：本发明提供了用于从基底电解去除铂和/或其它第8-11族金属的方法和系统。

3. 发明申请

US20060261040A1 Methods for planarization of group VIII metal-containing surfaces using oxidizing agents 审中-公开
公开(公告)号：US20060261040A1
公开(公告)日：2006-11-23
申请号：US11494172
申请日：2006-07-27
申请人： Rita Klein , Nishant Sinha , Gundu Sabde , Stefan Uhlenbrock , Donald Westmoreland
发明人： Rita Klein , Nishant Sinha , Gundu Sabde , Stefan Uhlenbrock , Donald Westmoreland
IPC分类号： C09K13/00 , C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/06
摘要： A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing agent.

4. 发明授权

US07250367B2 Deposition methods using heteroleptic precursors 有权
标题翻译：使用杂音前体的沉积方法
公开(公告)号：US07250367B2
公开(公告)日：2007-07-31
申请号：US10932149
申请日：2004-09-01
申请人： Brian A. Vaartstra , Donald Westmoreland , Eugene P. Marsh , Stefan Uhlenbrock
发明人： Brian A. Vaartstra , Donald Westmoreland , Eugene P. Marsh , Stefan Uhlenbrock
IPC分类号： H01L21/44
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/405 , H01L21/0228 , H01L21/3141
摘要： An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
摘要翻译： ALD方法包括将底物暴露于包含多个不同配体的第一前体，化学吸附底物上的前体单层，以及使第二前体与前体单层反应以产生产物单层。表面反应性配体表现出超过气体反应性配体显示的化学吸附亲和力的化学吸附亲和力。另一种沉积方法包括将底物暴露于含有氨基和/或亚氨基配体和卤化物配体的前体并沉积一层。前体表现出挥发性，其挥发性用卤化物配体取代每个氨基和/或亚氨基配体。前体表现出超过热稳定性的热稳定性，氨基和/或亚氨基配体取代每个卤化物配体。该层可以表现出比卤化物配体更少的卤素含量，代替每个氨基和/或亚氨基配体。

5. 发明申请

US20070197031A1 Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers 失效
标题翻译：用于形成诸如铂 - 铑屏障层的含铑层的方法
公开(公告)号：US20070197031A1
公开(公告)日：2007-08-23
申请号：US11789787
申请日：2007-04-25
申请人： Stefan Uhlenbrock , Eugene Marsh
发明人： Stefan Uhlenbrock , Eugene Marsh
IPC分类号： H01L21/62
CPC分类号： H01L21/76843 , C23C16/16 , C23C16/18 , H01L21/28556 , H01L21/28568 , H01L21/32051 , H01L21/7687 , H01L27/10811 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
摘要翻译：提供了使用式L y using using using using using using using using using using using using using using using using using using using using。。。。。。。。。。。。。。。。。。。。。。还提供了化学气相共沉积的铂 - 铑合金屏障和用于集成电路的电池电介质的电极，特别是用于DRAM电池电容器。在氧化再结晶步骤期间，合金屏障保护周围材料不被氧化，并在高温处理步骤中保护电池不会损失氧气。还提供了用于铂 - 铑合金扩散阻挡层的CVD共沉积的方法。

6. 发明申请

US20050260823A9 Methods and apparatus for forming rhodium-containing layers 有权
标题翻译：形成含铑层的方法和装置
公开(公告)号：US20050260823A9
公开(公告)日：2005-11-24
申请号：US10755097
申请日：2004-01-09
申请人： Stefan Uhlenbrock , Eugene Marsh
发明人： Stefan Uhlenbrock , Eugene Marsh
IPC分类号： C23C16/16 , C23C16/18 , H01L21/02 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L21/76843 , C23C16/16 , C23C16/18 , H01L21/28556 , H01L21/28568 , H01L21/32051 , H01L21/7687 , H01L27/10811 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
摘要翻译：提供了使用式L y using using using using using using using using using using using using using using using using using using using using。。。。。。。。。。。。。。。。。。。。。。还提供了化学气相共沉积的铂 - 铑合金屏障和用于集成电路的电池电介质的电极，特别是用于DRAM电池电容器。在氧化再结晶步骤期间，合金屏障保护周围材料不被氧化，并在高温处理步骤中保护电池电介质免受氧气损失。还提供了用于铂 - 铑合金扩散阻挡层的CVD共沉积的方法。

7. 发明申请

US20060160344A1 Rhodium film and method of formation 审中-公开
公开(公告)号：US20060160344A1
公开(公告)日：2006-07-20
申请号：US11378472
申请日：2006-03-20
申请人： Eugene Marsh , Stefan Uhlenbrock
发明人： Eugene Marsh , Stefan Uhlenbrock
IPC分类号： H01L21/44
CPC分类号： C23C16/45553 , C23C16/045 , C23C16/16 , C23C16/18 , C23C16/4401 , H01L27/10811 , H01L27/10852 , H01L28/55 , H01L28/60 , H01L28/65
摘要： A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

8. 发明申请

US20130306927A1 ATOMIC LAYER DEPOSITION OF A METAL CHALCOGENIDE MATERIAL AND RELATED MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS 有权
标题翻译：金属螯合材料和相关记忆细胞的原子层沉积和形成记忆细胞的方法
公开(公告)号：US20130306927A1
公开(公告)日：2013-11-21
申请号：US13476186
申请日：2012-05-21
申请人： Eugene P. Marsh , Stefan Uhlenbrock
发明人： Eugene P. Marsh , Stefan Uhlenbrock
IPC分类号： H01L47/00 , C01B19/00 , H01L21/02 , C01B21/082 , C01B33/00 , C01B25/14 , C01B19/04 , C01B35/14
CPC分类号： H01L45/141 , H01L21/02175 , H01L21/0228 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/1616
摘要： A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.
摘要翻译：一种形成金属硫族化物材料的方法。该方法包括将金属前体和硫族化物前体引入室中，并使金属前体和硫族化物前体反应以在基底上形成金属硫属化物材料。金属前体是碱金属，碱土金属，过渡金属，后过渡金属或准金属的羧酸盐。硫属化物前体是硫，硒或碲的氢化物，烷基或芳基前体，或硫，硒或碲的甲硅烷基化氢，甲硅烷基烷基或甲硅烷基芳基前体。还公开了形成包含金属硫族化物材料的记忆单元的方法，以及包括金属硫族化物材料的存储单元也是如此。

9. 发明授权

US07858523B2 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same 有权
标题翻译：不对称配体源，对称含金属化合物，以及包括其的体系和方法
公开(公告)号：US07858523B2
公开(公告)日：2010-12-28
申请号：US12500738
申请日：2009-07-10
申请人： Dan Millward , Stefan Uhlenbrock , Timothy A. Quick
发明人： Dan Millward , Stefan Uhlenbrock , Timothy A. Quick
IPC分类号： H01L21/44
CPC分类号： H01L21/0228 , C07C251/12 , C07F5/003 , C23C16/18 , C23C16/40 , H01L21/02175 , H01L21/02197 , H01L21/28556 , H01L21/3141 , H01L21/316
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one β-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译：本发明提供含有金属的化合物，其包含至少一种β-二亚胺化物配体，以及制备和使用它们的方法。在一些实施方案中，含金属的化合物是包含不对称的重氮基配合物的均质配合物。在其它实施方案中，含金属的化合物是包含至少一个重铬酸配体的杂光配合物。该化合物可用于使用气相沉积方法沉积含金属层。还提供了包括这些化合物的蒸镀系统。还提供了二联体配位体的衍生物。

10. 发明申请

US20100267195A1 Methods Of Forming Phase Change Materials And Methods Of Forming Phase Change Memory Circuitry 有权
标题翻译：形成相变材料的方法和形成相变存储器电路的方法
公开(公告)号：US20100267195A1
公开(公告)日：2010-10-21
申请号：US12424404
申请日：2009-04-15
申请人： Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
发明人： Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
IPC分类号： H01L21/06 , C23C16/06
CPC分类号： H01L45/144 , C23C16/28 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/1233 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
摘要翻译：形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。这种材料包括元素形式的锗。将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料在基板上。公开了其他实现。

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