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1. 发明授权

US07250367B2 Deposition methods using heteroleptic precursors 有权
标题翻译：使用杂音前体的沉积方法
公开(公告)号：US07250367B2
公开(公告)日：2007-07-31
申请号：US10932149
申请日：2004-09-01
申请人： Brian A. Vaartstra , Donald Westmoreland , Eugene P. Marsh , Stefan Uhlenbrock
发明人： Brian A. Vaartstra , Donald Westmoreland , Eugene P. Marsh , Stefan Uhlenbrock
IPC分类号： H01L21/44
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/405 , H01L21/0228 , H01L21/3141
摘要： An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
摘要翻译： ALD方法包括将底物暴露于包含多个不同配体的第一前体，化学吸附底物上的前体单层，以及使第二前体与前体单层反应以产生产物单层。表面反应性配体表现出超过气体反应性配体显示的化学吸附亲和力的化学吸附亲和力。另一种沉积方法包括将底物暴露于含有氨基和/或亚氨基配体和卤化物配体的前体并沉积一层。前体表现出挥发性，其挥发性用卤化物配体取代每个氨基和/或亚氨基配体。前体表现出超过热稳定性的热稳定性，氨基和/或亚氨基配体取代每个卤化物配体。该层可以表现出比卤化物配体更少的卤素含量，代替每个氨基和/或亚氨基配体。

2. 发明申请

US20060261040A1 Methods for planarization of group VIII metal-containing surfaces using oxidizing agents 审中-公开
公开(公告)号：US20060261040A1
公开(公告)日：2006-11-23
申请号：US11494172
申请日：2006-07-27
申请人： Rita Klein , Nishant Sinha , Gundu Sabde , Stefan Uhlenbrock , Donald Westmoreland
发明人： Rita Klein , Nishant Sinha , Gundu Sabde , Stefan Uhlenbrock , Donald Westmoreland
IPC分类号： C09K13/00 , C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/06
摘要： A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing agent.

3. 发明申请

US20060046521A1 Deposition methods using heteroleptic precursors 有权
标题翻译：使用杂音前体的沉积方法
公开(公告)号：US20060046521A1
公开(公告)日：2006-03-02
申请号：US10932149
申请日：2004-09-01
申请人： Brian Vaartstra , Donald Westmoreland , Eugene Marsh , Stefan Uhlenbrock
发明人： Brian Vaartstra , Donald Westmoreland , Eugene Marsh , Stefan Uhlenbrock
IPC分类号： H01L21/31
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/405 , H01L21/0228 , H01L21/3141
摘要： An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
摘要翻译： ALD方法包括将底物暴露于包含多个不同配体的第一前体，化学吸附底物上的前体单层，以及使第二前体与前体单层反应以产生产物单层。表面反应性配体表现出超过气体反应性配体显示的化学吸附亲和力的化学吸附亲和力。另一种沉积方法包括将底物暴露于含有氨基和/或亚氨基配体和卤化物配体的前体并沉积一层。前体表现出挥发性，其挥发性用卤化物配体取代每个氨基和/或亚氨基配体。前体表现出超过热稳定性的热稳定性，氨基和/或亚氨基配体取代每个卤化物配体。该层可以表现出比卤化物配体更少的卤素含量，代替每个氨基和/或亚氨基配体。

4. 发明申请

US20050016869A1 Systems and methods for the electrolytic removal of metals from substrates 审中-公开
标题翻译：从基材中电解去除金属的系统和方法
公开(公告)号：US20050016869A1
公开(公告)日：2005-01-27
申请号：US10923478
申请日：2004-08-20
申请人： Eugene Marsh , Stefan Uhlenbrock , Donald Westmoreland
发明人： Eugene Marsh , Stefan Uhlenbrock , Donald Westmoreland
IPC分类号： B23H3/00 , B23H5/08 , B23H9/00 , C25F3/02 , C25F5/00 , H01L21/00 , C25F7/00
CPC分类号： C25F5/00 , B23H3/00 , B23H5/08 , B23H9/00 , C25F3/02
摘要： The present invention provides methods and systems for the electrolytic removal of platinum and/or other of the Group 8-11 metals from substrates.
摘要翻译：本发明提供了用于从基底电解去除铂和/或其它第8-11族金属的方法和系统。

5. 发明授权

US08609221B2 Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces 有权
标题翻译：通过表面变化控制的二嵌段共聚物的交替自组装形态
公开(公告)号：US08609221B2
公开(公告)日：2013-12-17
申请号：US12834097
申请日：2010-07-12
申请人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
发明人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
IPC分类号： B32B3/30
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.
摘要翻译：提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

6. 发明授权

US08404124B2 Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces 有权
公开(公告)号：US08404124B2
公开(公告)日：2013-03-26
申请号：US11761589
申请日：2007-06-12
申请人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
发明人： Dan B. Millward , Donald Westmoreland , Gurtej Sandhu
IPC分类号： B44C1/22 , B82B3/00 , H01L21/302 , B82Y40/00
CPC分类号： H01J37/02 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , G03F7/265 , Y10T428/24 , Y10T428/24149 , Y10T428/24174 , Y10T428/2438
摘要： Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

7. 发明申请

US20090274887A1 Graphoepitaxial Self-Assembly of Arrays of Downward Facing Half-Cylinders 有权
标题翻译：向下表面半圆柱阵列的自顶向自组装
公开(公告)号：US20090274887A1
公开(公告)日：2009-11-05
申请号：US12114173
申请日：2008-05-02
申请人： Dan B. Millward , Donald Westmoreland
发明人： Dan B. Millward , Donald Westmoreland
IPC分类号： B32B23/00 , B05D3/02 , B44C1/22
CPC分类号： H01L29/0657 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , G03F7/0002 , H01L21/02118 , H01L21/0223 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/895 , Y10S977/90 , Y10T428/24182 , Y10T428/24521 , Y10T428/2462 , Y10T428/249921
摘要： Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
摘要翻译：提供了利用自组装嵌段共聚物在线阵列中制备亚光刻纳米级微结构的方法，以及由这些方法形成的膜和器件。

8. 发明申请

US20060070574A1 Method and system for binding halide-based contaminants 有权
公开(公告)号：US20060070574A1
公开(公告)日：2006-04-06
申请号：US11218773
申请日：2005-09-01
申请人： Garo Derderian , Cem Basceri , Donald Westmoreland
发明人： Garo Derderian , Cem Basceri , Donald Westmoreland
IPC分类号： C23C16/00
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

9. 发明申请

US20070148932A9 Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition 失效
标题翻译：使用原子层沉积形成铌和/或含钒层的系统和方法
公开(公告)号：US20070148932A9
公开(公告)日：2007-06-28
申请号：US10923315
申请日：2004-08-20
申请人： Garo Derderian , Donald Westmoreland , Stefan Uhlenbrook
发明人： Garo Derderian , Donald Westmoreland , Stefan Uhlenbrook
IPC分类号： H01L21/20
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02175 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604 , H01L28/90
摘要： A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
摘要翻译：使用一种或多种包括铌和/或钒的前体化合物在基板上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成（以及用于形成）含金属层的方法以及使用包括多个沉积循环的原子层沉积工艺。

10. 发明授权

US06312486B1 Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto 失效
标题翻译：具有用于半导体晶片的化学机械抛光的螯合剂的浆料及其相关的方法
公开(公告)号：US06312486B1
公开(公告)日：2001-11-06
申请号：US09605164
申请日：2000-06-27
申请人： Gurtej Singh Sandhu , Donald Westmoreland , Daniel Koos
发明人： Gurtej Singh Sandhu , Donald Westmoreland , Daniel Koos
IPC分类号： B08B700
CPC分类号： H01L21/02024 , C09G1/02 , H01L21/31053
摘要： A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.
摘要翻译：在化学机械抛光期间，浆料组合物增强了从半导体晶片的表面去除耐抛光表面部分。浆料组合物是包括溶剂，多个磨料颗粒和螯合剂的混合物。研磨颗粒磨损晶片的表面以去除表面部分和下面的材料。螯合剂被选择为与晶片表面表面上的抗抛光表面部分反应，从而使得表面部分更容易用基本上非侵蚀性的化学机械抛光技术从表面层去除。在操作中，通过螯合剂的化学作用和磨料颗粒的机械效应的组合来去除表面部分和下面的体积材料。

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