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1. 发明申请

US20180277701A1 Method of Manufacturing of a Solar Cell and Solar Cell Thus Obtained 审中-公开
公开(公告)号：US20180277701A1
公开(公告)日：2018-09-27
申请号：US15762507
申请日：2016-09-28
申请人： Tempress IP B.V.
发明人： Martijn Lenes , Ronald Cornelis Gerard Naber , Johannes Reinder Marc Luchies , Albert Hasper
IPC分类号： H01L31/068 , H01L31/18
CPC分类号： H01L31/0682 , C23C16/24 , C23C16/28 , C23C16/56 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/022425 , H01L31/0684 , H01L31/1804 , H01L31/182 , Y02E10/547 , Y02P70/521
摘要： The method of manufacturing of a solar cell comprises the steps of: providing a semiconductor substrate (100) comprising an electrically conductive region (11) extending at a first side thereof; and providing a tunnelling oxide (13) by thermal oxidation followed by a boron doped polysilicon LPCVD deposited layer on the second side of the semiconductor substrate. Herein, the provision of the doped polysilicon layer (20) comprises depositing a multilayer stack of first sublayers (21, 22, 23) of silicon and second sublayers (31, 32) of boron dopant in alternation, and subsequent annealing. Thereafter the solar cell is finalized with passivation layers on at least the first side and suitable metallization layers on the emitter and base regions.

2. 发明授权

US09932666B2 Fluid-assisted thermal management of evaporation sources 有权
公开(公告)号：US09932666B2
公开(公告)日：2018-04-03
申请号：US15082290
申请日：2016-03-28
申请人： Siva Power, Inc.
发明人： Markus Eberhard Beck , Ulrich Alexander Bonne , Robert G. Wendt
IPC分类号： H01L21/00 , C23C14/26 , H01L31/046 , C23C16/448 , F25B39/00 , H01L31/032 , H01L31/18 , H01L51/00 , H01L51/56 , C23C16/02 , C23C16/28 , C23C16/52 , C23C14/24 , C23C14/54 , F25D17/02 , F25B39/02 , H01L21/02
CPC分类号： C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要： In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.

3. 发明申请

US20180090319A1 HARD MASK AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20180090319A1
公开(公告)日：2018-03-29
申请号：US15715212
申请日：2017-09-26
申请人： TOKYO ELECTRON LIMITED
发明人： Takahiro Miyahara , Hiroki Murakami
IPC分类号： H01L21/033 , H01L21/311 , C23C16/50 , C23C16/46 , C23C16/38
CPC分类号： H01L21/0337 , C23C16/28 , C23C16/38 , C23C16/46 , C23C16/50 , H01L21/31116 , H01L21/31144
摘要： There is provided a hard mask used in forming a recess having a depth of 500 nm or more by dry etching. The hard mask includes a boron-based film formed as an etching mask on a film including a SiO2 film. Further, there is provided a method of forming the hard mask as the etching mask on a substrate to be processed having the film including the SiO2 film. The etching mask is for forming a recess having a depth of 500 nm or more by dry etching. The method includes forming a boron-based film by CVD by supplying at least a boron-containing gas to a surface of the film including the SiO2 film while heating the substrate to a predetermined temperature.

4. 发明申请

US20180006295A1 Silicon or Germanium Network Structure for Use as an Anode in a Battery 审中-公开
公开(公告)号：US20180006295A1
公开(公告)日：2018-01-04
申请号：US15703493
申请日：2017-09-13
申请人： University of Limerick
发明人： Kevin M. Ryan , Tadhg Kennedy , Emma Mullane
IPC分类号： H01M4/134 , C23C16/02 , H01M4/66 , H01M4/38 , H01M4/1395 , H01M2/16 , C30B29/06 , C23C16/56 , C23C16/52 , C23C16/44 , C23C16/28 , C23C16/24 , H01M4/04 , B82Y40/00 , H01M10/052 , H01M4/02
CPC分类号： H01M4/134 , B82Y40/00 , C23C16/0227 , C23C16/0281 , C23C16/24 , C23C16/28 , C23C16/4408 , C23C16/52 , C23C16/56 , C30B29/06 , H01M2/1673 , H01M4/0428 , H01M4/0445 , H01M4/045 , H01M4/1395 , H01M4/38 , H01M4/386 , H01M4/387 , H01M4/662 , H01M10/052 , H01M2004/027
摘要： The invention provides process for producing a stable Si or Ge electrode structure comprising cycling a Si or Ge nanowire electrode until a structure of the Si nanowires form a continuous porous network of Si or Ge ligaments.

5. 发明授权

US09816175B2 Thin-film deposition methods with fluid-assisted thermal management of evaporation sources 有权
公开(公告)号：US09816175B2
公开(公告)日：2017-11-14
申请号：US15082302
申请日：2016-03-28
申请人： Siva Power, Inc.
发明人： Markus Eberhard Beck , Ulrich Alexander Bonne , Robert G. Wendt
IPC分类号： H01L31/00 , C23C14/26 , H01L31/046 , C23C16/448 , F25B39/00 , H01L31/032 , H01L31/18 , H01L51/00 , H01L51/56 , C23C16/02 , C23C16/28 , C23C16/52 , C23C14/24 , C23C14/54 , F25D17/02 , F25B39/02 , H01L21/02
CPC分类号： C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要： In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

6. 发明授权

US09499571B2 Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films 有权
标题翻译：含锆和锆的组合物，用于含锆膜的气相沉积
公开(公告)号：US09499571B2
公开(公告)日：2016-11-22
申请号：US14580324
申请日：2014-12-23
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
发明人： Clement Lansalot-Matras , Julien Lieffrig , Hana Ishii , Christian Dussarrat
IPC分类号： C23C16/00 , C07F7/30 , C07F7/00 , C23C16/40 , C23C16/455
CPC分类号： C07F17/00 , C07F7/003 , C07F7/30 , C23C16/18 , C23C16/28 , C23C16/40 , C23C16/405 , C23C16/455 , C23C16/45553
摘要： Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
摘要翻译：其中每个R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8，R 9和R 10独立地选自H; C1-C5直链，支链或环状烷基; 和C 1 -C 5直链，支链或环状氟代烷基。还公开了合成所公开的前体的方法，并使用该方法通过气相沉积工艺在基底上沉积含锆膜。

7. 发明授权

US09150951B2 Wear resistant vapor deposited coating, method of coating deposition and applications therefor 有权
标题翻译：耐磨气相沉积涂层，涂层沉积方法及其应用
公开(公告)号：US09150951B2
公开(公告)日：2015-10-06
申请号：US13103871
申请日：2011-05-09
申请人： Vladimir Gorokhovsky , Brad B. Heckerman , Yuhang Cheng
发明人： Vladimir Gorokhovsky , Brad B. Heckerman , Yuhang Cheng
IPC分类号： C23C14/02 , C23C14/06 , C23C16/02 , A61B17/16 , A61C3/02 , A61C5/02
CPC分类号： C23C14/0641 , A61B17/1615 , A61B2017/1602 , A61C3/02 , A61C5/42 , C21D6/004 , C21D6/005 , C21D6/008 , C22C14/00 , C22C19/03 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/20 , C22C38/22 , C22C38/42 , C22C38/44 , C22C38/50 , C22F1/10 , C22F1/183 , C23C8/02 , C23C8/20 , C23C8/24 , C23C8/36 , C23C14/021 , C23C14/022 , C23C14/024 , C23C14/025 , C23C14/0605 , C23C14/0611 , C23C14/0635 , C23C14/067 , C23C14/0676 , C23C14/0682 , C23C14/14 , C23C14/5806 , C23C14/5826 , C23C14/586 , C23C14/588 , C23C16/0227 , C23C16/0236 , C23C16/0272 , C23C16/0281 , C23C16/06 , C23C16/24 , C23C16/26 , C23C16/28 , C23C16/32 , C23C16/34 , C23C16/38 , C23C16/42 , C23C16/56 , Y10T428/24975 , Y10T428/252 , Y10T428/265 , Y10T428/30
摘要： A low friction top coat over a multilayer metal/ceramic bondcoat provides a conductive substrate, such as a rotary tool, with wear resistance and corrosion resistance. The top coat further provides low friction and anti-stickiness as well as high compressive stress. The high compressive stress provided by the top coat protects against degradation of the tool due to abrasion and torsional and cyclic fatigue. Substrate temperature is strictly controlled during the coating process to preserve the bulk properties of the substrate and the coating. The described coating process is particularly useful when applied to shape memory alloys.
摘要翻译：在多层金属/陶瓷粘合剂涂层上的低摩擦面涂层提供具有耐磨性和耐腐蚀性的导电基底，例如旋转工具。顶涂层进一步提供低摩擦和抗粘性以及高压缩应力。由顶部涂层提供的高压缩应力防止由于磨损和扭转和循环疲劳导致的刀具劣化。在涂覆过程中严格控制基材温度以保持基材和涂层的本体特性。当应用于形状记忆合金时，所述的涂覆方法特别有用。

8. 发明申请

US20150060267A1 DIAMOND ELECTRODES FOR ELECTROCHEMICAL DEVICES 审中-公开
标题翻译：电化学设备用金刚石电极
公开(公告)号：US20150060267A1
公开(公告)日：2015-03-05
申请号：US13821960
申请日：2011-09-08
申请人： Helen Wilman
发明人： Timothy Peter Mollart , John Robert Brandon , Jonathan James Wilman
IPC分类号： C02F1/461 , C23C16/28 , C23C16/56 , C25D17/10 , C25B11/12
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46133 , C02F2001/46152 , C02F2201/46105 , C23C16/28 , C23C16/56 , C25B11/03 , C25B11/12 , C25D17/10
摘要： A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.
摘要翻译：一种体积硼掺杂的金刚石电极，其包括设置在体积掺杂硼的金刚石电极的表面中的多个凹槽。通过使用化学气相沉积技术生长体积掺杂硼的金刚石电极并在体积硼掺杂的金刚石电极的表面中形成多个凹槽来形成体积掺杂硼的金刚石电极。根据一种布置，通过在体积硼掺杂的金刚石电极的表面上形成碳溶剂金属的图案并加热形成多个凹槽，由此碳溶剂金属溶解下面的金刚石以在体积硼掺杂的表面中形成凹槽电极。本发明还涉及一种电化学电池，其包括一个或多个带槽的体积硼掺杂金刚石电极。所述或每个体积硼掺杂的金刚石电极在所述电化学装置内取向，使得所述凹槽在基本上平行于电解质流动方向的方向上对准。

9. 发明申请

US20140308776A1 Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry 有权
标题翻译：形成相变材料的方法和形成相变存储器电路的方法
公开(公告)号：US20140308776A1
公开(公告)日：2014-10-16
申请号：US14313850
申请日：2014-06-24
申请人： Micron Technology, Inc.
发明人： Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/28 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/1233 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
摘要翻译：形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。这种材料包括元素形式的锗。将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料在基板上。公开了其他实现。

10. 发明授权

US08697486B2 Methods of forming phase change materials and methods of forming phase change memory circuitry 有权
公开(公告)号：US08697486B2
公开(公告)日：2014-04-15
申请号：US12424404
申请日：2009-04-15
申请人： Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
发明人： Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
IPC分类号： H01L21/06
CPC分类号： H01L45/144 , C23C16/28 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/1233 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

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