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    • 1. 发明申请
    • COATING APPARATUS AND METHOD
    • 涂装装置及方法
    • US20140044880A1
    • 2014-02-13
    • US14000369
    • 2012-02-21
    • Erkan KoparalAndreas Kloeppel
    • Erkan KoparalAndreas Kloeppel
    • B05C13/00B05D7/00
    • B05C13/00B05D7/56C23C14/568H01L21/67173H01L21/67712H01L21/6776
    • A substrate processing system for processing an essentially vertically oriented substrate is described. The system includes a first processing chamber having a first processing region to deposit a first layer comprising a first material, a second processing chamber having a second processing region to deposit a second layer over the first layer, the second layer comprising a second material, a third processing chamber having a third processing region to deposit a layer comprising the second material, a transfer chamber providing essentially linear transport paths with the first, second, and third chambers, respectively, and a chamber comprising a first and a second transportation track, wherein at least one of the first and second transportation tracks forms an essentially linear transportation path with the first processing chamber, wherein the first chamber is adapted to receive the substrate from the transfer chamber, and to deposit a further layer comprising the first material.
    • 描述了用于处理基本垂直取向的基板的基板处理系统。 该系统包括具有第一处理区域的第一处理室,以沉积包括第一材料的第一层,具有第二处理区域的第二处理室以在第一层上沉积第二层,第二层包括第二材料, 第三处理室具有第三处理区域以沉积包含第二材料的层,传送室分别与第一,第二和第三室提供基本上线性的输送路径,以及包括第一和第二输送轨道的室,其中 所述第一和第二输送轨道中的至少一个与所述第一处理室形成基本上线性的输送路径,其中所述第一室适于从所述转移室接收所述基板,并沉积包括所述第一材料的另外的层。
    • 2. 发明授权
    • Coating apparatus and method
    • 涂布装置及方法
    • US09211563B2
    • 2015-12-15
    • US14000369
    • 2012-02-21
    • Erkan KoparalAndreas Kloeppel
    • Erkan KoparalAndreas Kloeppel
    • B05C13/00B05D7/00C23C14/56H01L21/67H01L21/677
    • B05C13/00B05D7/56C23C14/568H01L21/67173H01L21/67712H01L21/6776
    • A substrate processing system for processing an essentially vertically oriented substrate is described. The system includes a first processing chamber having a first processing region to deposit a first layer comprising a first material, a second processing chamber having a second processing region to deposit a second layer over the first layer, the second layer comprising a second material, a third processing chamber having a third processing region to deposit a layer comprising the second material, a transfer chamber providing essentially linear transport paths with the first, second, and third chambers, respectively, and a chamber comprising a first and a second transportation track, wherein at least one of the first and second transportation tracks forms an essentially linear transportation path with the first processing chamber, wherein the first chamber is adapted to receive the substrate from the transfer chamber, and to deposit a further layer comprising the first material.
    • 描述了用于处理基本垂直取向的基板的基板处理系统。 该系统包括具有第一处理区域的第一处理室,以沉积包括第一材料的第一层,具有第二处理区域的第二处理室以在第一层上沉积第二层,第二层包括第二材料, 第三处理室具有第三处理区域以沉积包含第二材料的层,传送室分别与第一,第二和第三室提供基本上线性的输送路径,以及包括第一和第二输送轨道的室,其中 所述第一和第二输送轨道中的至少一个与所述第一处理室形成基本上线性的输送路径,其中所述第一室适于从所述转移室接收所述基板,并沉积包括所述第一材料的另外的层。
    • 3. 发明授权
    • Double-coating device with one process chamber
    • 双涂层装置,带一个处理室
    • US09175383B2
    • 2015-11-03
    • US12015249
    • 2008-01-16
    • Andreas Kloeppel
    • Andreas Kloeppel
    • C23C14/34C23C14/35H01J37/34
    • C23C14/352H01J37/34H01J37/3405
    • The invention refers to a coating device for the deposition of thin films on large area substrates comprising a process chamber, an electrode arrangement within the process chamber (2) which is adapted for generating a plasma adjacent to the electrode arrangement (4) at at least two opposing sides of the electrode arrangement, and at least two substrate holders for supporting at least two substrates (5,6) in substrate positions on opposing sides of the electrode arrangement, the electrode arrangement being located between the substrate positions and the substrates facing in the substrate positions the at least two plasma generated at the electrode arrangement, wherein the electrode arrangement comprises at least two cathodes arranged in a plane, the cathodes being able to generate a plasma at at least two sides of each cathode. The invention further refers to a method for coating substrates with thin films comprising the following steps: providing a process chamber, providing an electrode arrangement within the process chamber for generating a plasma adjacent to the electrode arrangement at at least two sides of the electrode arrangement, and providing at least two substrate holders for supporting at least a first and a second substrate, locating the substrates to be coated in first and second positions on opposing sides of the electrode arrangement so that the electrode arrangement is located between the first and second positions and the substrates facing the at least two plasma generated at the electrode arrangement, wherein a first substrate located in the first substrate holder is coated in the first position during a first coating process and a second substrate supported by the second substrate holder is coated in the second position during a second coating process, the first and second coating process are carried out one after the other.
    • 本发明涉及一种用于在大面积衬底上沉积薄膜的涂覆装置,其包括处理室,处理室(2)内的电极装置,其适于至少在等离子体生成邻近电极装置(4)的等离子体 电极装置的两个相对的侧面,以及至少两个用于在电极装置的相对侧上的衬底位置中支撑至少两个衬底(5,6)的衬底保持件,电极装置位于衬底位置和衬底之间 衬底定位在电极装置处产生的至少两个等离子体,其中电极装置包括布置在平面中的至少两个阴极,阴极能够在每个阴极的至少两侧产生等离子体。 本发明还涉及一种用薄膜涂覆基材的方法,包括以下步骤:提供处理室,在处理室内提供电极装置,用于在电极装置的至少两侧产生与电极装置相邻的等离子体, 以及提供至少两个用于支撑至少第一和第二基板的基板保持件,将待涂覆的基板定位在电极布置的相对侧上的第一和第二位置,使得电极布置位于第一和第二位置之间, 所述衬底面对在所述电极装置处产生的所述至少两个等离子体,其中位于所述第一衬底保持器中的第一衬底在第一涂覆工艺期间被涂覆在所述第一位置,并且由所述第二衬底保持器支撑的第二衬底被涂覆在所述第二衬底保持器中 在第二涂覆过程中的位置,第一和第二涂覆过程 一个接一个地进行。
    • 5. 发明申请
    • DOUBLE-COATING DEVICE WITH ONE PROCESS CHAMBER
    • 具有一个过程室的双涂层设备
    • US20090178916A1
    • 2009-07-16
    • US12015249
    • 2008-01-16
    • Andreas Kloeppel
    • Andreas Kloeppel
    • C23C14/00
    • C23C14/352H01J37/34H01J37/3405
    • The invention refers to a coating device for the deposition of thin films on large area substrates comprising a process chamber, an electrode arrangement within the process chamber (2) which is adapted for generating a plasma adjacent to the electrode arrangement (4) at at least two opposing sides of the electrode arrangement, and at least two substrate holders for supporting at least two substrates (5,6) in substrate positions on opposing sides of the electrode arrangement, the electrode arrangement being located between the substrate positions and the substrates facing in the substrate positions the at least two plasma generated at the electrode arrangement, wherein the electrode arrangement comprises at least two cathodes arranged in a plane, the cathodes being able to generate a plasma at at least two sides of each cathode. The invention further refers to a method for coating substrates with thin films comprising the following steps: providing a process chamber, providing an electrode arrangement within the process chamber for generating a plasma adjacent to the electrode arrangement at at least two sides of the electrode arrangement, and providing at least two substrate holders for supporting at least a first and a second substrate, locating the substrates to be coated in first and second positions on opposing sides of the electrode arrangement so that the electrode arrangement is located between the first and second positions and the substrates facing the at least two plasma generated at the electrode arrangement, wherein a first substrate located in the first substrate holder is coated in the first position during a first coating process and a second substrate supported by the second substrate holder is coated in the second position during a second coating process, the first and second coating process are carried out one after the other.
    • 本发明涉及一种用于在大面积衬底上沉积薄膜的涂覆装置,其包括处理室,处理室(2)内的电极装置,其适于至少在等离子体生成邻近电极装置(4)的等离子体 电极装置的两个相对的侧面,以及至少两个用于在电极装置的相对侧上的衬底位置中支撑至少两个衬底(5,6)的衬底保持件,电极装置位于衬底位置和衬底之间 衬底定位在电极装置处产生的至少两个等离子体,其中电极装置包括布置在平面中的至少两个阴极,阴极能够在每个阴极的至少两侧产生等离子体。 本发明还涉及一种用薄膜涂覆基材的方法,包括以下步骤:提供处理室,在处理室内提供电极装置,用于在电极装置的至少两侧产生与电极装置相邻的等离子体, 以及提供至少两个用于支撑至少第一和第二基板的基板保持件,将待涂覆的基板定位在电极布置的相对侧上的第一和第二位置,使得电极布置位于第一和第二位置之间, 所述衬底面对在所述电极装置处产生的所述至少两个等离子体,其中位于所述第一衬底保持器中的第一衬底在第一涂覆工艺期间被涂覆在所述第一位置,并且由所述第二衬底保持器支撑的第二衬底被涂覆在所述第二衬底保持器中 在第二涂覆过程中的位置,第一和第二涂覆过程 一个接一个地进行。
    • 6. 发明申请
    • SPUTTER COATING DEVICE AND COATING METHOD
    • 溅射涂层装置和涂层方法
    • US20090114528A1
    • 2009-05-07
    • US11936586
    • 2007-11-07
    • Ralph LindenbergMarcus BenderTobias StolleyAndreas KloeppelAndreas LoppChristoph Moelle
    • Ralph LindenbergMarcus BenderTobias StolleyAndreas KloeppelAndreas LoppChristoph Moelle
    • C23C14/35
    • C23C14/3407C23C14/35H01J37/3408H01J37/3452H01J37/3455
    • A magnet/target assembly 1 comprises a target 2 consisting of a plurality of (virtual) segments 2.1, 2.2, 2.3, 2.4, 2.5, 2.6 arranged side by side, each of them extending along the longitudinal axis x of the target 2. Each of the plurality of target segments 2.1, 2.2, 2.3, 2.4, 2.5, 2.6 has a magnet system 3.1, 3.2, 3.3, 3.4, 3.5, 3.6 attributed to the respective target segment. In an embodiment of the target/magnet assembly 1 according to the present invention the magnet systems 3.1, 3.2, 3.3, 3.4, 3.5, 3.6 are arranged mutually offset relative to their respective adjacent magnet systems 3.1, 3.2, 3.3, 3.4, 3.5 and 3.6, respectively, while scanning the target segments 2.1, 2.2, 2.3, 2.4, 2.5 and 2.6, respectively. Particularly, the first magnet system 3.1, the third magnet system 3.3 and the fifth magnet system 3.5 are a first group of magnet systems moving parallel and synchronously with each other, and the second magnet system 3.2, the forth magnet systems 3.4 and the sixth magnet system 3.6 are a second group of magnet systems moving parallel and synchronously with each other. The first, third and fifth magnet systems 3.1, 3.3, 3.5 are alternately arranged with the second, forth and sixth magnet systems 3.2, 3.4 and 3.6, respectively, in the lateral direction y of the target 2. The paths of movement of the magnet systems are arranged parallel. The first and second groups of magnet systems 3.1, 3.2, 3.3, 3.4, 3.5, 3.6 are arranged offset in a longitudinal direction x of the target 2, i.e. arranged with a distance d between the groups in the longitudinal direction x of the target 2.
    • 磁体/目标组件1包括由多个(虚拟)段2.1,2.2,2.3,2.4,2.5,2.6组成的目标2,每个段2.1,2.2,2.3,2.4,2.5,2.6每个都沿目标2的纵向轴线x延伸。每个 多个目标段2.1,2.2,2.3,2.4,2.5,2.6具有归因于相应目标段的磁体系统3.1,3.2,3.3,3.4,3.5,3.6。 在根据本发明的靶/磁体组件1的实施例中,磁体系统3.1,3.2,3.3,3.4,3.5,3.6相对于它们各自相邻的磁体系统3.1,3.2,3.3,3.4,3.5相互偏置地布置,并且 3.6,分别扫描目标段2.1,2.2,2.3,2.4,2.5和2.6。 特别地,第一磁体系统3.1,第三磁体系统3.3和第五磁体系统3.5是彼此平行和同步移动的第一组磁体系统,第二磁体系统3.2,第四磁体系统3.4和第六磁体 系统3.6是彼此平行和同步移动的第二组磁体系统。 第一,第三和第五磁体系统3.1,3.3,3.5分别与目标2的横向y上的第二,第四和第六磁体系统3.2,3.4和3.6交替布置。磁体的运动路径 系统并行排列。 第一和第二组磁体系统3.1,3.2,3.3,3.4,3.5,3.6在目标2的纵向方向x上偏移布置,即,在目标2的纵向方向x上的组之间设置距离d 。