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1. 发明申请

US20100307415A1 SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF 有权
标题翻译：半导体加工反应器及其组件
公开(公告)号：US20100307415A1
公开(公告)日：2010-12-09
申请号：US12754223
申请日：2010-04-05
申请人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
发明人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
IPC分类号： H01L21/46 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01L21/0228 , Y10T137/85938
摘要： A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.
摘要翻译：一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。气体输送系统还包括用于接收至少一种处理气体的混合器。混合器可操作地连接到被配置成扩散工艺气体的扩散器。扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。反应室限定反应空间，其中半导体衬底被设置用于处理。排气组件可操作地连接到反应室，用于从反应空间抽出未反应的工艺气体和流出物。

2. 发明授权

US09394608B2 Semiconductor processing reactor and components thereof 有权
标题翻译：半导体处理反应器及其组件
公开(公告)号：US09394608B2
公开(公告)日：2016-07-19
申请号：US12754223
申请日：2010-04-05
申请人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
发明人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
IPC分类号： C23C16/455
CPC分类号： C23C16/45502 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01L21/0228 , Y10T137/85938
摘要： A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
摘要翻译：一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。气体输送系统还包括用于接收至少一种处理气体的混合器。混合器可操作地连接到被配置成扩散工艺气体的扩散器。扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。

3. 发明授权

US09359672B2 Reaction system for growing a thin film 有权
公开(公告)号：US09359672B2
公开(公告)日：2016-06-07
申请号：US13529223
申请日：2012-06-21
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/455 , C23C16/458 , C23C16/44 , C30B35/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

4. 发明申请

US20060266289A1 Reaction system for growing a thin film 有权
标题翻译：用于生长薄膜的反应体系
公开(公告)号：US20060266289A1
公开(公告)日：2006-11-30
申请号：US11333127
申请日：2006-01-17
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/00
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译：原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。沉积室包括与空间连通的气体入口。气体系统构造成将气体输送到沉积室的气体入口。气体系统的至少一部分位于沉积室上方。气体系统包括配置成混合多个气流的混合器。转移构件与混合器和气体入口流体连通。传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

5. 发明授权

US09574268B1 Pulsed valve manifold for atomic layer deposition 有权
标题翻译：用于原子层沉积的脉冲阀歧管
公开(公告)号：US09574268B1
公开(公告)日：2017-02-21
申请号：US13284738
申请日：2011-10-28
申请人： Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
发明人： Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
IPC分类号： C23C16/455 , C23C16/453
CPC分类号： C23C16/45544 , C23C16/455 , C23C16/45512 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45576 , C23C16/45589 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
摘要翻译：气相沉积装置包括反应器，该反应器包括反应室和用于将蒸汽注入反应室的喷射器。该装置还包括用于将蒸气输送到喷射器的歧管。歧管包括具有内孔的歧管主体，在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道，以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道，以及与孔。每个第一供应通道相对于孔的纵向轴线以锐角设置，并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。分配通道（因此，供应通道）可以与常见的反应物源连接。还描述了相关的沉积方法。

6. 发明授权

US08211230B2 Reaction system for growing a thin film 有权
标题翻译：用于生长薄膜的反应体系
公开(公告)号：US08211230B2
公开(公告)日：2012-07-03
申请号：US11333127
申请日：2006-01-17
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译：原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。沉积室包括与空间连通的气体入口。气体系统构造成将气体输送到沉积室的气体入口。气体系统的至少一部分位于沉积室上方。气体系统包括配置成混合多个气流的混合器。转移构件与混合器和气体入口流体连通。传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

7. 发明申请

US20120266821A1 REACTION SYSTEM FOR GROWING A THIN FILM 有权
标题翻译：用于生成薄膜的反应体系
公开(公告)号：US20120266821A1
公开(公告)日：2012-10-25
申请号：US13529223
申请日：2012-06-21
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/458
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译：原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。沉积室包括与空间连通的气体入口。气体系统被配置为将气体输送到沉积室的气体入口。气体系统的至少一部分位于沉积室上方。气体系统包括配置成混合多个气流的混合器。转移构件与混合器和气体入口流体连通。传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

8. 发明授权

US08215264B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08215264B2
公开(公告)日：2012-07-10
申请号：US13171899
申请日：2011-06-29
申请人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
发明人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/045 , C23C16/45508
摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.
摘要翻译：本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分，恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。反应空间的顶部被成形为在基底上提供不均匀的间隙。

9. 发明授权

US07976898B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US07976898B2
公开(公告)日：2011-07-12
申请号：US11857294
申请日：2007-09-18
申请人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
发明人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/045 , C23C16/45508
摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.
摘要翻译：本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分，恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。反应空间的顶部被成形为在基底上提供不均匀的间隙。

10. 发明申请

US20050170306A1 Method and apparatus for purging seals in a thermal reactor 有权
标题翻译：用于清洗热反应器中的密封件的方法和装置
公开(公告)号：US20050170306A1
公开(公告)日：2005-08-04
申请号：US11038357
申请日：2005-01-18
申请人： Theodorus Maria Oosterlaken , Frank Huussen , Herbert Terhorst , Jack Van Putten
发明人： Theodorus Maria Oosterlaken , Frank Huussen , Herbert Terhorst , Jack Van Putten
IPC分类号： H01L21/31 , B08B5/00 , B08B7/00 , G01M3/04 , H01L21/00
CPC分类号： H01L21/67126
摘要： A semiconductor processing reactor comprises a reaction chamber with a gas exhaust and a mechanical seal at one end of the chamber. The seal seals off the chamber from the ambient environment and is purged with gas to prevent diffusion of ambient gases into the reaction chamber. Because the purge gas can diffuse through the seal into the reaction chamber, the purge gas is chosen based upon the process gas and the location of the seal and exhaust so that the molecular weight of the purge gas causes the purge gas, by the force of gravity or buoyancy, to remain in the portion of the reaction chamber containing the seal and the gas exhaust. Advantageously, keeping the purge gas at the same end of the chamber as the gas exhaust minimizes dilution of the process gas with the purge gas, thereby preventing the purge gas from detrimentally effecting process results.
摘要翻译：半导体处理反应器包括在室的一端具有排气和机械密封的反应室。密封件将室从周围环境密封并用气体吹扫，以防止环境气体扩散进入反应室。因为吹扫气体可以通过密封件扩散到反应室中，所以基于处理气体和密封件和排气的位置来选择吹扫气体，使得吹扫气体的分子量由吹扫气体的分力引起，重力或浮力，保留在包含密封件和排气的反应室的部分。有利地，将吹扫气体保持在与气体排出物相同的端部处，使得处理气体与吹扫气体的稀释最小化，从而防止吹扫气体不利地影响过程结果。

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