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1. 发明申请

US20110308460A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20110308460A1
公开(公告)日：2011-12-22
申请号：US13171899
申请日：2011-06-29
申请人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
发明人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
IPC分类号： C23C16/455 , C23C16/509 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/045 , C23C16/45508
摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.
摘要翻译：本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分，恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。反应空间的顶部被成形为在基底上提供不均匀的间隙。

2. 发明申请

US20080069955A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20080069955A1
公开(公告)日：2008-03-20
申请号：US11857294
申请日：2007-09-18
申请人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
发明人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/045 , C23C16/45508
摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.
摘要翻译：本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分，恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。反应空间的顶部被成形为在基底上提供不均匀的间隙。

3. 发明授权

US08215264B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08215264B2
公开(公告)日：2012-07-10
申请号：US13171899
申请日：2011-06-29
申请人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
发明人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/045 , C23C16/45508
摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.
摘要翻译：本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分，恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。反应空间的顶部被成形为在基底上提供不均匀的间隙。

4. 发明授权

US07976898B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US07976898B2
公开(公告)日：2011-07-12
申请号：US11857294
申请日：2007-09-18
申请人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
发明人： Kyung Il Hong , Dae Youn Kim , Hyung-Sang Park , Sang Jin Jeong , Wonyong Koh , Herbert Terhorst
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/045 , C23C16/45508
摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.
摘要翻译：本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分，恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。反应空间的顶部被成形为在基底上提供不均匀的间隙。

5. 发明申请

US20070218701A1 Semiconductor-processing apparatus with rotating susceptor 审中-公开
标题翻译：具有旋转基座的半导体处理装置
公开(公告)号：US20070218701A1
公开(公告)日：2007-09-20
申请号：US11376048
申请日：2006-03-15
申请人： Akira Shimizu , Wonyong Koh , Hyung-Sang Park , Young-Duck Tak
发明人： Akira Shimizu , Wonyong Koh , Hyung-Sang Park , Young-Duck Tak
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： C23C16/45551 , C23C16/06 , C23C16/36 , H01L21/67161 , H01L21/67748 , H01L21/68764
摘要： An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.
摘要翻译：一种用于在处理目标上沉积薄膜的设备包括：反应空间; 感受器可上下移动并围绕其中心轴线旋转; 以及隔离壁，其将反应空间分成多个隔室，包括源气体室和净化气体室，其中当基座升高以进行薄膜沉积时，在基座和隔离壁之间产生小的间隙，从而在相应的隔室，其中每个源气体隔室和每个吹扫气室交替地设置在基座的基座转动方向上。

6. 发明申请

US20070215036A1 Method and apparatus of time and space co-divided atomic layer deposition 审中-公开
标题翻译：时空分离原理层沉积的方法与装置
公开(公告)号：US20070215036A1
公开(公告)日：2007-09-20
申请号：US11376817
申请日：2006-03-15
申请人： Hyung-Sang Park , Young-Duck Tak , Wonyong Koh , Akira Shimizu
发明人： Hyung-Sang Park , Young-Duck Tak , Wonyong Koh , Akira Shimizu
IPC分类号： C30B23/00 , C23C16/00
CPC分类号： C23C16/45551
摘要： Space and time co-divided atomic layer deposition (ALD) apparatuses and methods are provided. Substrates are moved (e.g., rotated) among multiple reaction zones, each of which is exposed to only one ALD reactant. At the same time, reactants are pulsed in each reaction zone, with purging or other gas removal methods between pulses. Separate exhaust passages for each reactant and purging during wafer movement minimizes particle contamination. Additionally, preferred embodiments permit different pulsing times in each reaction space, thus permitting flexibility in pulsing.
摘要翻译：提供空间和时间共分离原子层沉积（ALD）装置和方法。衬底在多个反应区域中移动（例如旋转），每个反应区域仅暴露于一个ALD反应物。同时，反应物在每个反应区域被脉冲，在脉冲之间进行吹扫或其它气体去除方法。每个反应物的分离排气通道和晶片移动过程中的清洗使颗粒污染最小化。此外，优选实施例允许在每个反应空间中不同的脉冲时间，从而允许脉冲的灵活性。

7. 发明申请

US20080110399A1 ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
标题翻译：原子层沉积装置
公开(公告)号：US20080110399A1
公开(公告)日：2008-05-15
申请号：US11936630
申请日：2007-11-07
申请人： Hyung-Sang Park , Dae Youn Kim , Akira Shimizu
发明人： Hyung-Sang Park , Dae Youn Kim , Akira Shimizu
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/45504 , C23C16/45574 , C23C16/45587
摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor includes a reaction chamber, one or more inlets, and an exhaust outlet. The reaction chamber includes a reaction space. The reactor also includes a gas flow control guide structure within the reaction chamber. The gas flow control guide structure resides over the reaction space and is interposed between the inlets and the reaction space such that a laminar flow is generated in the reaction space. The gas flow control guide structure includes one or more channels. Each of the channels extends from a respective one of the inlets to a first portion of a periphery of the reaction space. Each of the channels defines a flow path extending from the respective one of the inlets to the reaction space. The gas flow control guide structure further includes a passage or shortcut formed through the gas flow control guide structure to provide a minority flow directly over the reaction space to merge with the laminar flow. This configuration allows films deposited on a substrate to have a uniform thickness, even in cases where reactants that are unstable at a deposition temperature is used.
摘要翻译：公开了一种被配置成使基板交替重复表面反应的反应器的反应器。反应器包括反应室，一个或多个入口和排气出口。反应室包括反应空间。反应器还包括反应室内的气体流量控制引导结构。气体流量控制引导结构位于反应空间之上，并且介于入口和反应空间之间，从而在反应空间中产生层流。气体流量控制引导结构包括一个或多个通道。每个通道从入口中的相应一个延伸到反应空间的周边的第一部分。每个通道限定从入口中的相应一个延伸到反应空间的流动路径。气体流量控制引导结构还包括通过气流控制引导结构形成的通道或捷径，以在反应空间上直接提供少数流体以与层流合并。即使在使用在沉积温度不稳定的反应物的情况下，也可以使沉积在基板上的膜具有均匀的厚度。

8. 发明申请

US20050113917A1 Expandable interfusion cage 失效
公开(公告)号：US20050113917A1
公开(公告)日：2005-05-26
申请号：US10719756
申请日：2003-11-21
申请人： Soo-Kyung Chae , Jae-Ryoun Youn , Do-Heum Yoon , Yong-Eun Cho , Sang-Taek Kim , Hyung-Sang Park
发明人： Soo-Kyung Chae , Jae-Ryoun Youn , Do-Heum Yoon , Yong-Eun Cho , Sang-Taek Kim , Hyung-Sang Park
IPC分类号： A61F2/30 , A61F2/44
CPC分类号： A61F2/447 , A61F2/30744 , A61F2/446 , A61F2002/30579 , A61F2002/30777 , A61F2002/30785 , A61F2002/30892 , A61F2002/4475
摘要： An expandable interfusion cage comprising a cage body and a spacer. The cage body includes a seat part which is pierced by an orifice and a branch part which defines therein an inside space and has a plurality of elongate branches integrally formed at their proximal ends with the seat part. An opening is defined between two adjoining branches to communicate with the inside space. The spacer is movably assembled in the inside space of the cage body to expand the cage body radially outward. Inward projections are formed at distal ends, respectively, of the branches to project radially inward toward an axis of the cage body. The inside space of the cage body has substantially a circular or polygonal sectional shape. The spacer is engaged with the inward projections of the branches while expanding the cage body.

9. 发明授权

US06749242B2 Glove box damper system 有权
标题翻译：手套箱阻尼器系统
公开(公告)号：US06749242B2
公开(公告)日：2004-06-15
申请号：US10330324
申请日：2002-12-30
申请人： Hyung-Sang Park
发明人： Hyung-Sang Park
IPC分类号： B60R706
CPC分类号： B60R7/06 , Y10T16/54034
摘要： A damper system of a glove box includes fastening holes formed at side walls of the glove box, plates provided with through holes to be aligned with the fastening holes, a binding groove formed at one side of each plate, a fixing groove formed at the other side of each plate, a plate spring joined with the binding groove and the fixing groove, and protrusions provided at both sides of the glove box so that the plate spring can be fixed when the glove box pivots by the hinge, such that when the glove box pivots, the plate springs contact the protrusions, whereby the weight of the glove box can be reduced.
摘要翻译：手套箱的阻尼器系统包括形成在手套箱的侧壁处的紧固孔，设置有与紧固孔对准的通孔的板，形成在每个板的一侧的装订槽，在另一侧形成的固定槽每个板的侧面，与装订槽和固定槽接合的板簧，以及设置在手套箱两侧的突起，使得当手套箱由铰链枢转时可以固定板簧，使得当手套盒子转动时，板簧与突起接触，从而可以减轻手套箱的重量。

10. 发明申请

US20110121430A1 METHOD FOR FORMING A SILICON DIOXIDE/METAL OXIDE-NANOLAMINATE WITH A DESIRED WET ETCH RATE 有权
标题翻译：形成二氧化硅/金属氧化物 - 纳米酸铵的方法，其具有所需的湿蚀刻速率
公开(公告)号：US20110121430A1
公开(公告)日：2011-05-26
申请号：US12623871
申请日：2009-11-23
申请人： Peter Zagwijn , Hyung-Sang Park , Stijn De Vusser
发明人： Peter Zagwijn , Hyung-Sang Park , Stijn De Vusser
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01L21/0228 , H01L21/02164 , H01L21/02178 , H01L21/022 , H01L21/02219
摘要： An atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, comprising at least one layer of silicon dioxide and at least one layer of a metal oxide, and having a wet etch rate in an etchant, said wet etch rate being either greater or smaller than both a wet etch rate of a film of silicon dioxide and a wet etch rate of a film of said metal oxide in said etchant. Also provided is a method for manufacturing the same.
摘要翻译：包含至少一层二氧化硅和至少一层金属氧化物的原子层沉积二氧化硅/金属氧化物 - 纳米酸盐酸盐，并且在蚀刻剂中具有湿蚀刻速率，所述湿蚀刻速率较大或小于二氧化硅膜的湿蚀刻速率和所述蚀刻剂中所述金属氧化物膜的湿蚀刻速率。还提供了制造该方法的方法。

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