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1. 发明授权

US09394608B2 Semiconductor processing reactor and components thereof 有权
标题翻译：半导体处理反应器及其组件
公开(公告)号：US09394608B2
公开(公告)日：2016-07-19
申请号：US12754223
申请日：2010-04-05
申请人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
发明人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
IPC分类号： C23C16/455
CPC分类号： C23C16/45502 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01L21/0228 , Y10T137/85938
摘要： A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
摘要翻译：一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。气体输送系统还包括用于接收至少一种处理气体的混合器。混合器可操作地连接到被配置成扩散工艺气体的扩散器。扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。

2. 发明申请

US20100307415A1 SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF 有权
标题翻译：半导体加工反应器及其组件
公开(公告)号：US20100307415A1
公开(公告)日：2010-12-09
申请号：US12754223
申请日：2010-04-05
申请人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
发明人： Eric Shero , Mohith E. Verghese , Carl L. White , Herbert Terhorst , Dan Maurice
IPC分类号： H01L21/46 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01L21/0228 , Y10T137/85938
摘要： A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.
摘要翻译：一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。气体输送系统还包括用于接收至少一种处理气体的混合器。混合器可操作地连接到被配置成扩散工艺气体的扩散器。扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。反应室限定反应空间，其中半导体衬底被设置用于处理。排气组件可操作地连接到反应室，用于从反应空间抽出未反应的工艺气体和流出物。

3. 发明申请

US20100322604A1 PRECURSOR DELIVERY SYSTEM 有权
标题翻译：前身派送系统
公开(公告)号：US20100322604A1
公开(公告)日：2010-12-23
申请号：US12763037
申请日：2010-04-19
申请人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
发明人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
IPC分类号： F24H1/20
CPC分类号： C23C16/4481
摘要： A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.
摘要翻译：提供了一种用于向反应室提供蒸发的前体的前体源容器。前体源容器包括具有第一端口，第二端口和第三端口的盖。前体源容器还包括可移除地附接到盖的基座。底座包括形成在其中的凹陷区域。第一，第二和第三端口之一是打孔口，其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

4. 发明申请

US20080085226A1 PRECURSOR DELIVERY SYSTEM 有权
标题翻译：前身送货系统
公开(公告)号：US20080085226A1
公开(公告)日：2008-04-10
申请号：US11870374
申请日：2007-10-10
申请人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
发明人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
IPC分类号： B01J19/00 , F28D21/00
CPC分类号： C23C16/4481 , C23C16/4401 , C23C16/4402
摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
摘要翻译：前体源容器包括容器主体，容器主体内的通道和附接到主体表面的阀。内部腔室适于容纳化学反应物，并且通道从身体外部延伸到腔室。阀调节通过通道的流量。容器具有入口和出口阀，并且可选地用于排放内部气体的排气阀。外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。容器盖中的过滤器或壁过滤气体流过容器的阀门。快速连接组件允许快速和容易地将容器连接到气体面板。

5. 发明授权

US08137462B2 Precursor delivery system 有权
标题翻译：前体输送系统
公开(公告)号：US08137462B2
公开(公告)日：2012-03-20
申请号：US11870374
申请日：2007-10-10
申请人： Kyle Fondurulia , Eric Shero , Mohith E Verghese , Carl L White
发明人： Kyle Fondurulia , Eric Shero , Mohith E Verghese , Carl L White
IPC分类号： C23C16/00 , C23C16/455 , C23C16/448
CPC分类号： C23C16/4481 , C23C16/4401 , C23C16/4402
摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
摘要翻译：前体源容器包括容器主体，容器主体内的通道和附接到主体表面的阀。内部腔室适于容纳化学反应物，并且通道从身体外部延伸到腔室。阀调节通过通道的流量。容器具有入口和出口阀，并且可选地用于排放内部气体的排气阀。外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。容器盖中的过滤器或壁过滤气体流过容器的阀门。快速连接组件允许快速和容易地将容器连接到气体面板。

6. 发明授权

US09593416B2 Precursor delivery system 有权
标题翻译：前体输送系统
公开(公告)号：US09593416B2
公开(公告)日：2017-03-14
申请号：US13404700
申请日：2012-02-24
申请人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
发明人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
IPC分类号： C23C16/44 , C23C16/448
CPC分类号： C23C16/4481 , C23C16/4401 , C23C16/4402
摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
摘要翻译：前体源容器包括容器主体，容器主体内的通道和附接到主体表面的阀。内部腔室适于容纳化学反应物，并且通道从身体外部延伸到腔室。阀调节通过通道的流量。容器具有入口和出口阀，并且可选地用于排放内部气体的排气阀。外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。容器盖中的过滤器或壁过滤气体流过容器的阀门。快速连接组件允许快速和容易地将容器连接到气体面板。

7. 发明授权

US08986456B2 Precursor delivery system 有权
标题翻译：前体输送系统
公开(公告)号：US08986456B2
公开(公告)日：2015-03-24
申请号：US12763037
申请日：2010-04-19
申请人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
发明人： Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
IPC分类号： C23C16/448
CPC分类号： C23C16/4481
摘要： A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.
摘要翻译：提供了一种用于向反应室提供蒸发的前体的前体源容器。前体源容器包括具有第一端口，第二端口和第三端口的盖。前体源容器还包括可移除地附接到盖的基座。底座包括形成在其中的凹陷区域。第一，第二和第三端口之一是打孔口，其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

8. 发明申请

US20120156108A1 PRECURSOR DELIVERY SYSTEM 有权
公开(公告)号：US20120156108A1
公开(公告)日：2012-06-21
申请号：US13404700
申请日：2012-02-24
申请人： KYLE FONDURULIA , Eric Shero , Mohith E. Verghese , Carl L. White
发明人： KYLE FONDURULIA , Eric Shero , Mohith E. Verghese , Carl L. White
IPC分类号： B01J8/00 , B01D35/00
CPC分类号： C23C16/4481 , C23C16/4401 , C23C16/4402
摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

9. 发明授权

US09359672B2 Reaction system for growing a thin film 有权
公开(公告)号：US09359672B2
公开(公告)日：2016-06-07
申请号：US13529223
申请日：2012-06-21
申请人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人： Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号： C23C16/455 , C23C16/458 , C23C16/44 , C30B35/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

10. 发明授权

US09574268B1 Pulsed valve manifold for atomic layer deposition 有权
标题翻译：用于原子层沉积的脉冲阀歧管
公开(公告)号：US09574268B1
公开(公告)日：2017-02-21
申请号：US13284738
申请日：2011-10-28
申请人： Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
发明人： Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
IPC分类号： C23C16/455 , C23C16/453
CPC分类号： C23C16/45544 , C23C16/455 , C23C16/45512 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45576 , C23C16/45589 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
摘要翻译：气相沉积装置包括反应器，该反应器包括反应室和用于将蒸汽注入反应室的喷射器。该装置还包括用于将蒸气输送到喷射器的歧管。歧管包括具有内孔的歧管主体，在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道，以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道，以及与孔。每个第一供应通道相对于孔的纵向轴线以锐角设置，并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。分配通道（因此，供应通道）可以与常见的反应物源连接。还描述了相关的沉积方法。

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