专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20170230598A1 SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20170230598A1
公开(公告)日：2017-08-10
申请号：US15326122
申请日：2015-07-09
申请人： Brillnics Inc.
发明人： Isao Takayanagi , Shunsuke Tanaka , Kazuya Mori , Katsuhiko Ariyoshi , Shinichiro Matsuo
IPC分类号： H04N5/378 , H04N5/374 , H04N5/372 , H01L27/146 , H01L27/148
CPC分类号： H04N5/378 , H01L27/14623 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/1469 , H01L27/14812 , H01L27/14818 , H01L27/1485 , H01L27/14887 , H04N5/372 , H04N5/374 , H04N5/379
摘要： A solid state imaging device has: a photosensitive part containing a plurality of charge transfer parts that transfer, in column units, the signal charges of a plurality of photoelectric conversion elements disposed in a matrix; a conversion/output unit that converts, to an electrical signal, the signal charges forwarded by the charge transfer parts; a peripheral circuit part that performs a predetermined process with respect to the electrical signals from the conversion/output part; a relay part that relays the forwarding to the peripheral circuit part of the electrical signal from the conversion/output part; a first substrate where a photosensitive part and the conversion/output part are formed; and a second substrate where the peripheral circuit part is formed. The first and second substrates are stacked together, and the relay part electrically connects the conversion/output part formed at the first substrate to the peripheral circuit part formed at the second substrate.

2. 发明授权

US08772891B2 Lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：图像传感器中的横向溢出漏极和通道停止区域
公开(公告)号：US08772891B2
公开(公告)日：2014-07-08
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L27/146 , H01L27/148
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

3. 发明授权

US08329499B2 Method of forming lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：在图像传感器中形成横向溢流漏极和通道停止区域的方法
公开(公告)号：US08329499B2
公开(公告)日：2012-12-11
申请号：US12609296
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/426 , H01L31/14
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

4. 发明申请

US20120256287A1 BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：后置照明固态图像拾取器件
公开(公告)号：US20120256287A1
公开(公告)日：2012-10-11
申请号：US13258696
申请日：2010-03-23
申请人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14818 , H01L27/1485
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.
摘要翻译：在背照式固体摄像装置中，包括具有在背面侧具有光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的多个电荷转移电极2，相对于光入射面，在彼此相邻的电荷转移电极2之间形成有用于透射光的多个开口OP。此外，可以在每个电荷转移电极2内部形成用于透射光的多个开口OP。

5. 发明授权

US08164121B2 Charge coupled device with potential gradient region between two control gate regions 有权
标题翻译：电荷耦合器件具有两个控制栅极区域之间的电位梯度区域
公开(公告)号：US08164121B2
公开(公告)日：2012-04-24
申请号：US12780708
申请日：2010-05-14
申请人： Mark Wadsworth
发明人： Mark Wadsworth
IPC分类号： H01L27/148
CPC分类号： H01L27/14683 , H01L27/1462 , H01L27/14806 , H01L27/1485
摘要： A six-phase charge coupled device (CCD) pixel includes a pixel pair, with each pixel having two adjacent control gates overlying corresponding variable potential wells, where voltages applied to the control gates enable charge to be accumulated into and transferred out of the wells. A clear window region overlies a fixed potential gradient region, decreasing in potential away from the control gates. This region enables a wide band of photons to be sensed by the photosensitive silicon of the CCD. The decreasing potential levels facilitate high charge transfer efficiency (i.e., high CTE) from pixel to pixel via the control or transfer gates. By applying particular voltages to the control gates, charge can be quickly and efficiently transferred between pixels. In addition, the window provides a self aligned mask for the implantation steps and thus prevents the formation of pockets (or wells) due to misalignments that decrease the charge transfer efficiency and causes non-uniformity problems as associated with prior art. Furthermore the window provides a flat region that can be covered with an anti-reflective (AR) coating layer, thus further increasing the quantum efficiency.
摘要翻译：六相电荷耦合器件（CCD）像素包括像素对，其中每个像素具有覆盖相应的可变势阱的两个相邻的控制栅极，其中施加到控制栅极的电压使得电荷能够积累并输出到阱中。清晰的窗口区域覆盖固定的电位梯度区域，电位远离控制栅极减小。该区域使得能够通过CCD的感光硅感测宽带光子。降低的电位电平有助于通过控制或传输门从像素到像素的高电荷转移效率（即高CTE）。通过对控制栅极施加特定的电压，可以在像素之间快速有效地传送电荷。此外，窗口为植入步骤提供自对准的掩模，并且因此防止由于未对准而导致的口袋（或孔）的形成，这会降低电荷转移效率并引起与现有技术相关的不均匀性问题。此外，窗口提供可以用抗反射（AR）涂层覆盖的平坦区域，从而进一步增加量子效率。

6. 发明申请

US20110024854A1 SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION 有权
标题翻译：包含电子倍增功能的固态图像感测装置
公开(公告)号：US20110024854A1
公开(公告)日：2011-02-03
申请号：US12920144
申请日：2010-01-27
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ihiro Takagi , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ihiro Takagi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H01L27/146
CPC分类号： H01L27/1485 , H01L27/1464 , H01L27/14843 , H04N5/335 , H04N5/37213
摘要： A solid state imaging device includes a P-type semiconductor substrate 1A, a P-type epitaxial layer 1B grown on the semiconductor substrate 1A, an imaging region VR grown within the epitaxial layer 1B, and an N-type semiconductor region 1C grown within the epitaxial layer 1B. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well region 1D formed within the epitaxial layer 1B. The N-type semiconductor region 1C extends in the well region 1D. A P-type impurity concentration in the well region 1D is higher than a P-type impurity concentration in the epitaxial layer 1B. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well region 1D.
摘要翻译：固态成像装置包括P型半导体衬底1A，在半导体衬底1A上生长的P型外延层1B，在外延层1B内生长的成像区域VR以及在该外延层1B内生长的N型半导体区域1C 外延层1B。固态成像装置还包括从成像区域VR发送信号的水平移位寄存器HR以及形成在外延层1B内的P型阱区域1D。 N型半导体区域1C在阱区域1D中延伸。阱区1D中的P型杂质浓度高于外延层1B中的P型杂质浓度。在阱区域1D中形成有乘法电路从水平移位寄存器HR乘以的乘法寄存器EM。

7. 发明授权

US07719573B2 Device and method for processing photographic image data 有权
标题翻译：用于处理摄影图像数据的装置和方法
公开(公告)号：US07719573B2
公开(公告)日：2010-05-18
申请号：US10148838
申请日：2001-10-03
申请人： Kouichi Harada , Tomoo Mitsunaga , Seiji Kobayashi
发明人： Kouichi Harada , Tomoo Mitsunaga , Seiji Kobayashi
IPC分类号： H04N5/235 , G03B7/00
CPC分类号： H01L27/1485 , H01L27/1462 , H01L27/14812 , H04N5/235 , H04N5/35554 , H04N5/3728
摘要： Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time. The electric charges accumulated in the light-receiving elements are transferred to the vertical transfer registers, due to the voltage output from the first drive-voltage applying electrode or the second drive-voltage applying electrode, or the voltages output from both electrodes. Therefore, the light-receiving elements can have different sensitivities, and the photographing device can photograph dynamic scenes in a broad dynamic range.
摘要翻译：本文公开了一种拍摄装置，其包括多个光接收元件，多个垂直传送寄存器，第一驱动电压施加电极和第二驱动电压施加电极。光接收元件沿水平方向和垂直方向排列。垂直传送寄存器在垂直方向上传送累积在光接收元件中的电荷。第一驱动电压施加电极平行于垂直传送寄存器布置，用于将驱动电压施加到特定的一个垂直传送寄存器。第二驱动电压施加电极垂直于垂直传送寄存器布置，用于将第二驱动电压同时施加到垂直传送寄存器。由于从第一驱动电压施加电极或第二驱动电压施加电极输出的电压或从两个电极输出的电压，累积在光接收元件中的电荷被传送到垂直传送寄存器。因此，光接收元件可以具有不同的灵敏度，并且拍摄装置可以在宽动态范围内拍摄动态场景。

8. 发明授权

US07692707B2 Solid-state image pickup apparatus, image pickup apparatus, and image sensor 失效
标题翻译：固态图像拾取装置，图像拾取装置和图像传感器
公开(公告)号：US07692707B2
公开(公告)日：2010-04-06
申请号：US11632964
申请日：2005-07-20
申请人： Yasushi Kondo , Hiromasa Maruno
发明人： Yasushi Kondo , Hiromasa Maruno
IPC分类号： H04N3/14 , H04N5/335 , H04N5/217
CPC分类号： H04N5/3725 , H01L27/14806 , H01L27/14837 , H01L27/1485
摘要： In a solid-state image sensor according to this invention, an image signal temperature variation suppressing unit changes a voltage value of a driver voltage applied to multiplying registers in response to variations in sensor temperature of a CCD image sensor. Thus, a charge multiplication gain of a charge multiplying unit is electrically controlled to suppress variations in signal strength of image signals due to the variations in the sensor temperature of the CCD image sensor. As a result, without relying on thermal control with which it is very difficult to realize high precision control, variations in the signal strength of the image signals due to the variations in the sensor temperature of the CCD image sensor are suppressed easily by controlling the charge multiplication gain of the charge multiplying unit based on the electric control, with which it is very easy to realize high precision control, performed by the image signal temperature variation suppressing unit in response to the variations in the sensor temperature of the CCD image sensor.
摘要翻译：在根据本发明的固态图像传感器中，图像信号温度变化抑制单元响应于CCD图像传感器的传感器温度的变化而改变施加到乘法寄存器的驱动器电压的电压值。因此，电荷乘法单元的电荷倍增增益被电控制，以抑制由于CCD图像传感器的传感器温度的变化引起的图像信号的信号强度的变化。结果，不依赖于难于实现高精度控制的热控制，由于CCD图像传感器的传感器温度的变化导致的图像信号的信号强度的变化容易地通过控制电荷根据CCD图像传感器的传感器温度的变化，基于由图像信号温度变化抑制单元执行的电气控制的非常容易实现高精度控制的电荷乘法单元的乘法增益。

9. 发明授权

US07645975B2 Spatial information detecting device 失效
标题翻译：空间信息检测装置
公开(公告)号：US07645975B2
公开(公告)日：2010-01-12
申请号：US10598274
申请日：2005-10-24
申请人： Hideki Kawahara , Motoo Ikari , Kenichi Hagio , Eiji Nakamoto
发明人： Hideki Kawahara , Motoo Ikari , Kenichi Hagio , Eiji Nakamoto
IPC分类号： H01L27/00 , G01N21/86 , H04N5/222
CPC分类号： H01L27/14843 , H01L27/14818 , H01L27/1485 , H04N5/235
摘要： A spatial information detecting device for accurately detecting information of a target space is provided. This device has photoelectric converters for receiving a reflection light from the space, in which a flashing light is being irradiated, a charge storage portion formed in each of the photoelectric converters by applying a control voltage to electrodes on each of the photoelectric converters, a controller for controlling the number of electrodes, to which the control voltage is applied, such that an area of the charge storage portion changes based on a flash cycle of the flashing light, and an amplitude-image generator for generating an amplitude image having pixel values, each of which is provided by a difference between electric charges collected in a lighting period of the flashing light by a charge storage portion and the electric charges collected in a non-lighting period of the flashing light by another charge storage portion.
摘要翻译：提供了一种用于准确地检测目标空间的信息的空间信息检测装置。该装置具有光电转换器，用于从其中照射闪光的空间接收反射光，通过向每个光电转换器中的电极施加控制电压，形成在每个光电转换器中的电荷存储部分，控制器用于控制施加控制电压的电极的数量，使得电荷存储部分的面积基于闪光的闪光周期而变化;以及幅度图像发生器，用于产生具有像素值的幅度图像，其中的每一个由通过电荷存储部分在闪光的发光周期中收集的电荷与通过另一个电荷存储部分在闪光的非发光时段中收集的电荷之间的差异来提供。

10. 发明申请

US20090303377A1 IMAGE SENSORS WITH IMPROVED ANGLE RESPONSE 有权
标题翻译：具有改善角度响应的图像传感器
公开(公告)号：US20090303377A1
公开(公告)日：2009-12-10
申请号：US12132652
申请日：2008-06-04
申请人： Eric J. Meisenzahl
发明人： Eric J. Meisenzahl
IPC分类号： H04N5/225 , H01L27/148
CPC分类号： H01L27/14818 , H01L27/1485
摘要： An image sensor includes a substrate having a plurality of photosensitive areas, a light shield positioned spanning the photosensitive areas in which light shield a plurality of apertures are formed, and a plurality of microlens each disposed centered on one of the apertures such that a focal point of the incident light through each microlens is substantially extended into the substrate to a point where a portion of the incident light directed onto the periphery of each microlens is blocked by a light shield.
摘要翻译：图像传感器包括具有多个感光区域的基板，定位在其上形成有遮光器的光敏区域的光屏蔽以及以其中一个孔为中心的多个微透镜，使得焦点通过每个微透镜的入射光的入射光基本上延伸到衬底中，使得被引导到每个微透镜的周边的入射光的一部分被遮光罩遮挡。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式