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1. 发明申请

US20100140728A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
公开(公告)号：US20100140728A1
公开(公告)日：2010-06-10
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L21/265
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.

2. 发明授权

US08772891B2 Lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：图像传感器中的横向溢出漏极和通道停止区域
公开(公告)号：US08772891B2
公开(公告)日：2014-07-08
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L27/146 , H01L27/148
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

3. 发明授权

US08329499B2 Method of forming lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：在图像传感器中形成横向溢流漏极和通道停止区域的方法
公开(公告)号：US08329499B2
公开(公告)日：2012-12-11
申请号：US12609296
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/426 , H01L31/14
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

4. 发明申请

US20120168892A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
标题翻译：图像传感器中的横向溢流漏斗和通道停止区域
公开(公告)号：US20120168892A1
公开(公告)日：2012-07-05
申请号：US13415021
申请日：2012-03-08
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/10
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

5. 发明授权

US08994139B2 Lateral overflow drain and channel stop regions in image sensors 有权
标题翻译：图像传感器中的横向溢出漏极和通道停止区域
公开(公告)号：US08994139B2
公开(公告)日：2015-03-31
申请号：US13415021
申请日：2012-03-08
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

6. 发明申请

US20100140729A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
标题翻译：图像传感器中的横向溢流漏斗和通道停止区域
公开(公告)号：US20100140729A1
公开(公告)日：2010-06-10
申请号：US12609296
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/265 , H01L31/10
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

7. 发明授权

US06624453B2 Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage 有权
标题翻译：具有改善的击穿电压的CCD器件的横向溢出漏极，防喷射结构
公开(公告)号：US06624453B2
公开(公告)日：2003-09-23
申请号：US09945034
申请日：2001-08-31
申请人： Edmund K. Banghart , Eric G. Stevens
发明人： Edmund K. Banghart , Eric G. Stevens
IPC分类号： H01L31062
CPC分类号： H01L27/14887
摘要： An image sensor having an anti-blooming structure, where the image sensor comprises a substrate of a first conductivity type; a dielectric having a first thin portion and a second thick portion; a buried channel of the second conductivity type within the substrate substantially spanning the first thin portion; and a lateral overflow drain region of the second conductivity type disposed substantially in its entirety spanning a portion of the second thick portion for collecting excess photogenerated charges for preventing blooming.
摘要翻译：一种具有抗晕花结构的图像传感器，其中所述图像传感器包括第一导电类型的衬底; 具有第一薄部分和第二厚部分的电介质; 衬底内的第二导电类型的掩埋沟道，基本跨越第一薄部分; 以及第二导电类型的横向溢出漏极区域，其基本上整体上跨越第二厚部分的一部分，用于收集用于防止起霜的过量光生电荷。

8. 发明申请

US20120080731A1 PHOTODETECTOR ISOLATION IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的光电隔离
公开(公告)号：US20120080731A1
公开(公告)日：2012-04-05
申请号：US12894262
申请日：2010-09-30
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14607 , H01L27/1461 , H01L27/14645 , H01L27/14689
摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.
摘要翻译：第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

9. 发明申请

US20100148230A1 TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的分离区域
公开(公告)号：US20100148230A1
公开(公告)日：2010-06-17
申请号：US12332407
申请日：2008-12-11
申请人： Eric G. Stevens , Hung Q. Doan
发明人： Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/762 , H01L31/112
CPC分类号： H01L27/14689 , H01L21/76224 , H01L27/1463
摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.
摘要翻译：沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。

10. 发明申请

US20120083067A1 METHOD FOR FORMING PHOTODETECTOR ISOLATION IN IMAGERS 审中-公开
标题翻译：在图像中形成光电离分离的方法
公开(公告)号：US20120083067A1
公开(公告)日：2012-04-05
申请号：US12894281
申请日：2010-09-30
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14607 , H01L27/1463
摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.
摘要翻译：第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

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