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1. 发明授权

US08586478B2 Method of making a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08586478B2
公开(公告)日：2013-11-19
申请号：US13424932
申请日：2012-03-20
申请人： Eiichi Soda , Yunpeng Yin , Sivananda Kanakasabapathy
发明人： Eiichi Soda , Yunpeng Yin , Sivananda Kanakasabapathy
IPC分类号： H01L21/44
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/76811 , H01L21/76816 , H01L21/76897
摘要： An improved method of making interconnect structures with self-aligned vias in semiconductor devices utilizes sidewall image transfer to define the trench pattern. The sidewall height acts as a sacrificial mask during etching of the via and subsequent etching of the trench, so that the underlying metal hard mask is protected. Thinner hard masks and/or a wider range of etch chemistries may thereby be utilized.
摘要翻译：在半导体器件中制造具有自对准通孔的互连结构的改进方法利用侧壁图像转移来限定沟槽图案。在蚀刻通孔和随后蚀刻沟槽期间，侧壁高度用作牺牲掩模，使得下面的金属硬掩模被保护。因此可以利用更薄的硬掩模和/或更广泛的蚀刻化学物质。

2. 发明授权

US08796812B2 Self-aligned trench over fin 有权
标题翻译：自对准沟槽鳍
公开(公告)号：US08796812B2
公开(公告)日：2014-08-05
申请号：US13561142
申请日：2012-07-30
申请人： Chiahsun Tseng , Chun-chen Yeh , Yunpeng Yin , Lei L. Zhuang
发明人： Chiahsun Tseng , Chun-chen Yeh , Yunpeng Yin , Lei L. Zhuang
IPC分类号： H01L29/00
CPC分类号： H01L21/30604 , H01L21/0334 , H01L21/3085 , H01L21/3086 , H01L21/3088
摘要： A stack of a first hard mask portion and a second hard mask portion is formed over a semiconductor material layer by anisotropically etching a stack, from bottom to top, of a first hard mask layer and a second hard mask layer. The first hard mask portion is laterally recessed by an isotropic etch. A dielectric material layer is conformally deposited and planarized. The dielectric material layer is etched employing an anisotropic etch that is selective to the first hard mask portion to form a dielectric material portion that laterally surrounds the first hard mask portion. After removal of the second and first hard mask portions, the semiconductor material layer is etched employing the dielectric material portion as an etch mask. Optionally, portions of the semiconductor material layer underneath the first and second hard mask portions can be undercut at a periphery.
摘要翻译：通过从第一硬掩模层和第二硬掩模层的从底部到顶部的各向异性地蚀刻叠层，在半导体材料层上形成第一硬掩模部分和第二硬掩模部分的堆叠。通过各向同性蚀刻，第一硬掩模部分被横向凹进。电介质材料层被共形沉积并平坦化。使用对第一硬掩模部分选择性的各向异性蚀刻蚀刻电介质材料层，以形成侧向围绕第一硬掩模部分的电介质材料部分。在去除第二和第一硬掩模部分之后，使用介电材料部分作为蚀刻掩模蚀刻半导体材料层。可选地，第一和第二硬掩模部分下面的半导体材料层的一部分可以在周边被切削。

3. 发明申请

US20140057436A1 THREE PHOTOMASK SIDEWALL IMAGE TRANSFER METHOD 失效
标题翻译：三光子图像传输方法
公开(公告)号：US20140057436A1
公开(公告)日：2014-02-27
申请号：US13592683
申请日：2012-08-23
申请人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
发明人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
IPC分类号： H01L21/768
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/31144
摘要： A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer.
摘要翻译：三个光掩模图像传输方法。该方法包括使用第一光掩模，在衬底上的硬掩模层上限定一组心轴; 在所述心轴的侧壁上形成侧壁间隔件，所述侧壁间隔物间隔开; 去除一组心轴; 使用第二光掩模，去除侧壁间隔物的区域，形成修剪的侧壁间隔物并限定第一特征的图案; 在修剪的侧壁间隔物和未被修剪的侧壁间隔物覆盖的硬掩模层上形成图案转移层; 使用第三光掩模，限定所述转移层中的第二特征的图案，所述第二特征中的至少一个邻接所述第一特征图案的至少一个特征; 同时将第一特征的图案和第二特征的图案转移到硬掩模层中，从而形成图案化的硬掩模层。

4. 发明授权

US08637406B1 Image transfer process employing a hard mask layer 失效
标题翻译：使用硬掩模层的图像转印过程
公开(公告)号：US08637406B1
公开(公告)日：2014-01-28
申请号：US13552992
申请日：2012-07-19
申请人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
发明人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
IPC分类号： H01L21/311
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10T428/24802
摘要： At least one mask layer formed over a substrate includes at least one of a dielectric material and a metallic material. By forming a first pattern in one of the at least one mask layer, a patterned mask layer including said first pattern is formed. An overlying structure including a second pattern that includes at least one blocking area is formed over said patterned mask layer. Portions of said patterned mask layer that do not underlie said blocking area are removed. The remaining portions of the patterned mask layer include a composite pattern that is an intersection of the first pattern and the second pattern. The patterned mask layer includes a dielectric material or a metallic material, and thus, enables high fidelity pattern transfer into an underlying material layer.
摘要翻译：在衬底上形成的至少一个掩模层包括电介质材料和金属材料中的至少一种。通过在所述至少一个掩模层之一中形成第一图案，形成包括所述第一图案的图案化掩模层。在所述图案化掩模层上形成包括包括至少一个阻挡区域的第二图案的覆盖结构。除去不在所述阻挡区域下面的所述图案化掩模层的部分被去除。图案化掩模层的其余部分包括作为第一图案和第二图案的交叉的复合图案。图案化掩模层包括电介质材料或金属材料，因此能够将高保真图案转移到下面的材料层中。

5. 发明授权

US08518824B2 Self aligning via patterning 失效
标题翻译：通过图案自对准
公开(公告)号：US08518824B2
公开(公告)日：2013-08-27
申请号：US13558441
申请日：2012-07-26
申请人： John Christopher Arnold , Sean D. Burns , Sivananda K. Kanakasabapathy , Yunpeng Yin
发明人： John Christopher Arnold , Sean D. Burns , Sivananda K. Kanakasabapathy , Yunpeng Yin
IPC分类号： H01L21/311 , H01L21/44 , H01L21/00
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/76811 , H01L21/76816 , H01L21/76897
摘要： A method for patterning self-aligned vias in a dielectric. The method includes forming a first trench partially through a hard mask, where the trench corresponds to a desired wiring path in the dielectric. The trench should be formed on a sub-lithographic scale. Then, form a second trench, also of a sub-lithographic scale, that intersects the first trench. The intersection forms a pattern extending through the depth of the hard mask, and corresponds to a via hole in the dielectric. The via hole is etched into the dielectric through the hard mask. Then the first trench is extended through the hard mask and the exposed area is etched to form the wiring path, which intersects the via hole. Conductive material is deposited to form a sub-lithographic via and wiring. This method may be used to form multiple vias of sub-lithographic proportions and with a sub-lithographic pitch.
摘要翻译：用于在电介质中图案化自对准通孔的方法。该方法包括通过硬掩模部分地形成第一沟槽，其中沟槽对应于电介质中期望的布线路径。沟槽应该在亚光刻尺上形成。然后，形成与第一沟槽相交的第二沟槽，也是亚光刻标尺。交叉点形成延伸穿过硬掩模的深度的图案，并且对应于电介质中的通孔。通孔通过硬掩模蚀刻到电介质中。然后将第一沟槽延伸穿过硬掩模，并且暴露的区域被蚀刻以形成与通孔相交的布线路径。导电材料沉积以形成亚光刻通孔和布线。该方法可以用于形成亚光刻比例的多个通孔和亚光刻间距。

6. 发明申请

US20130001750A1 FILM STACK INCLUDING METAL HARDMASK LAYER FOR SIDEWALL IMAGE TRANSFER FIN FIELD EFFECT TRANSISTOR FORMATION 有权
标题翻译：包括金属硬质合金层的薄膜堆叠，用于边缘图像传输金场效应晶体管形成
公开(公告)号：US20130001750A1
公开(公告)日：2013-01-03
申请号：US13171868
申请日：2011-06-29
申请人： JOHN C. ARNOLD , Sivananda K. Kanakasabapathy , Stefan Schmitz , Yunpeng Yin
发明人： JOHN C. ARNOLD , Sivananda K. Kanakasabapathy , Stefan Schmitz , Yunpeng Yin
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L21/3088 , H01L21/3086 , H01L21/845 , H01L29/66795
摘要： A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; forming a large feature (FX) mask on the metal hardmask layer; etching the mandrel mask and the FX mask simultaneously into the metal hardmask layer; etching the mandrel mask and the FX mask into the SOI layer using the etched metal hardmask layer as a mask.
摘要翻译：用于形成鳍状场效应晶体管（FinFET）器件的方法包括在膜堆叠的金属硬掩模层上形成心轴掩模，所述膜堆叠包括位于金属硬掩模层下面的绝缘体上硅层（SOI）层; 在金属硬掩模层上形成大特征（FX）掩模; 将芯棒掩模和FX掩模同时蚀刻到金属硬掩模层中; 使用蚀刻的金属硬掩模层作为掩模将芯棒掩模和FX掩模刻蚀成SOI层。

7. 发明授权

US08916337B2 Dual hard mask lithography process 有权
标题翻译：双硬掩模光刻工艺
公开(公告)号：US08916337B2
公开(公告)日：2014-12-23
申请号：US13402068
申请日：2012-02-22
申请人： John C. Arnold , Sean D. Burns , Steven J. Holmes , David V. Horak , Muthumanickam Sankarapandian , Yunpeng Yin
发明人： John C. Arnold , Sean D. Burns , Steven J. Holmes , David V. Horak , Muthumanickam Sankarapandian , Yunpeng Yin
IPC分类号： G03F7/26
CPC分类号： H01L23/5226 , G03F7/0035 , G03F7/091 , G03F7/094 , H01L21/0332 , H01L21/0338 , H01L21/3081 , H01L21/3088 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L2924/0002 , Y10T428/24355 , H01L2924/00
摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.
摘要翻译：在互连级介质层上的第一金属硬掩模层用线图案图案化。在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

8. 发明授权

US08716133B2 Three photomask sidewall image transfer method 失效
标题翻译：三光掩模侧壁图像传输方法
公开(公告)号：US08716133B2
公开(公告)日：2014-05-06
申请号：US13592683
申请日：2012-08-23
申请人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
发明人： Shyng-Tsong Chen , Ryan O. Jung , Neal V. Lafferty , Yunpeng Yin
IPC分类号： H01L21/44
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/31144
摘要： A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer.
摘要翻译：三个光掩模图像传输方法。该方法包括使用第一光掩模，在衬底上的硬掩模层上限定一组心轴; 在所述心轴的侧壁上形成侧壁间隔件，所述侧壁间隔物间隔开; 去除一组心轴; 使用第二光掩模，去除侧壁间隔物的区域，形成修剪的侧壁间隔物并限定第一特征的图案; 在修剪的侧壁间隔物和未被修剪的侧壁间隔物覆盖的硬掩模层上形成图案转移层; 使用第三光掩模，限定所述转移层中的第二特征的图案，所述第二特征中的至少一个邻接所述第一特征图案的至少一个特征; 同时将第一特征的图案和第二特征的图案转移到硬掩模层中，从而形成图案化的硬掩模层。

9. 发明申请

US20140035142A1 PROFILE CONTROL IN INTERCONNECT STRUCTURES 有权
标题翻译：互连结构中的配置控制
公开(公告)号：US20140035142A1
公开(公告)日：2014-02-06
申请号：US13562953
申请日：2012-07-31
申请人： Chih-Chao Yang , Shyng-Tsong Chen , Samuel S. Choi , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Wai-Kin Li , Christopher J. Penny , Shom Ponoth , Yunpeng Yin
发明人： Chih-Chao Yang , Shyng-Tsong Chen , Samuel S. Choi , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Wai-Kin Li , Christopher J. Penny , Shom Ponoth , Yunpeng Yin
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76813 , H01L21/76831 , H01L21/76844 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.
摘要翻译：可以通过在形成介电材料之前形成电介质材料的每个通孔开口内形成轮廓控制衬垫来控制通孔的轮廓，然后在电介质材料内形成线路开口。在形成线路开口期间在每个通孔开口内存在轮廓控制衬垫防止存在于线路开口下方并且邻近通孔开口的电介质材料部分的拐角的四舍五入。

10. 发明申请

US20140024219A1 IMAGE TRANSFER PROCESS EMPLOYING A HARD MASK LAYER 失效
公开(公告)号：US20140024219A1
公开(公告)日：2014-01-23
申请号：US13552992
申请日：2012-07-19
申请人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
发明人： Ryan O. Jung , Sivananda K. Kanakasabapathy , Yunpeng Yin
IPC分类号： H01L21/306
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10T428/24802
摘要： At least one mask layer formed over a substrate includes at least one of a dielectric material and a metallic material. By forming a first pattern in one of the at least one mask layer, a patterned mask layer including said first pattern is formed. An overlying structure including a second pattern that includes at least one blocking area is formed over said patterned mask layer. Portions of said patterned mask layer that do not underlie said blocking area are removed. The remaining portions of the patterned mask layer include a composite pattern that is an intersection of the first pattern and the second pattern. The patterned mask layer includes a dielectric material or a metallic material, and thus, enables high fidelity pattern transfer into an underlying material layer.

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