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1. 发明授权

US08796812B2 Self-aligned trench over fin 有权
标题翻译：自对准沟槽鳍
公开(公告)号：US08796812B2
公开(公告)日：2014-08-05
申请号：US13561142
申请日：2012-07-30
申请人： Chiahsun Tseng , Chun-chen Yeh , Yunpeng Yin , Lei L. Zhuang
发明人： Chiahsun Tseng , Chun-chen Yeh , Yunpeng Yin , Lei L. Zhuang
IPC分类号： H01L29/00
CPC分类号： H01L21/30604 , H01L21/0334 , H01L21/3085 , H01L21/3086 , H01L21/3088
摘要： A stack of a first hard mask portion and a second hard mask portion is formed over a semiconductor material layer by anisotropically etching a stack, from bottom to top, of a first hard mask layer and a second hard mask layer. The first hard mask portion is laterally recessed by an isotropic etch. A dielectric material layer is conformally deposited and planarized. The dielectric material layer is etched employing an anisotropic etch that is selective to the first hard mask portion to form a dielectric material portion that laterally surrounds the first hard mask portion. After removal of the second and first hard mask portions, the semiconductor material layer is etched employing the dielectric material portion as an etch mask. Optionally, portions of the semiconductor material layer underneath the first and second hard mask portions can be undercut at a periphery.
摘要翻译：通过从第一硬掩模层和第二硬掩模层的从底部到顶部的各向异性地蚀刻叠层，在半导体材料层上形成第一硬掩模部分和第二硬掩模部分的堆叠。通过各向同性蚀刻，第一硬掩模部分被横向凹进。电介质材料层被共形沉积并平坦化。使用对第一硬掩模部分选择性的各向异性蚀刻蚀刻电介质材料层，以形成侧向围绕第一硬掩模部分的电介质材料部分。在去除第二和第一硬掩模部分之后，使用介电材料部分作为蚀刻掩模蚀刻半导体材料层。可选地，第一和第二硬掩模部分下面的半导体材料层的一部分可以在周边被切削。

2. 发明申请

US20140027878A1 SELF-ALIGNED TRENCH OVER FIN 有权
公开(公告)号：US20140027878A1
公开(公告)日：2014-01-30
申请号：US13561142
申请日：2012-07-30
申请人： Chiahsun Tseng , Chun-chen Yeh , Yunpeng Yin , Lei L. Zhuang
发明人： Chiahsun Tseng , Chun-chen Yeh , Yunpeng Yin , Lei L. Zhuang
IPC分类号： H01L29/02 , H01L21/302
CPC分类号： H01L21/30604 , H01L21/0334 , H01L21/3085 , H01L21/3086 , H01L21/3088
摘要： A stack of a first hard mask portion and a second hard mask portion is formed over a semiconductor material layer by anisotropically etching a stack, from bottom to top, of a first hard mask layer and a second hard mask layer. The first hard mask portion is laterally recessed by an isotropic etch. A dielectric material layer is conformally deposited and planarized. The dielectric material layer is etched employing an anisotropic etch that is selective to the first hard mask portion to form a dielectric material portion that laterally surrounds the first hard mask portion. After removal of the second and first hard mask portions, the semiconductor material layer is etched employing the dielectric material portion as an etch mask. Optionally, portions of the semiconductor material layer underneath the first and second hard mask portions can be undercut at a periphery.

3. 发明授权

US08969213B2 Non-lithographic line pattern formation 有权
标题翻译：非平版印刷线图案形成
公开(公告)号：US08969213B2
公开(公告)日：2015-03-03
申请号：US13561122
申请日：2012-07-30
申请人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
发明人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
IPC分类号： H01L21/308
CPC分类号： H01L21/3081 , H01L21/02244 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/67063 , Y10T428/24802
摘要： A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation and/or nitridation. A hard mask portion is formed over the metal layer. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. The sequence of a surface pull back of the hard mask portion, trench etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a line pattern having a spacing that is not limited by lithographic minimum dimensions.
摘要翻译：金属层沉积在下层材料层上。金属层包括可通过等离子体氧化和/或氮化转化为含介电金属的化合物的元素金属。在金属层上形成硬掩模部分。进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。重复将硬掩模部分的表面拉回序列，沟槽蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的线图案尺寸。

4. 发明授权

US09054156B2 Non-lithographic hole pattern formation 有权
标题翻译：非平版孔图案形成
公开(公告)号：US09054156B2
公开(公告)日：2015-06-09
申请号：US13561133
申请日：2012-07-30
申请人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
发明人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
IPC分类号： H01L21/768 , H01L23/498
CPC分类号： H01L21/768 , H01L21/02244 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/0332 , H01L21/0337 , H01L21/32139 , H01L21/76816 , H01L23/498 , H01L29/0692 , H01L45/1691 , H01L2924/0002 , H01L2924/00
摘要： A metal layer is deposited over a material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation or nitridation. A hard mask portion is formed over the metal layer. A plasma impermeable spacer is formed on at least one first sidewall of the hard mask portion, while at least one second sidewall of the hard mask portion is physically exposed. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. A sequence of a surface pull back of the hard mask portion, cavity etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a hole pattern having a spacing that is not limited by lithographic minimum dimensions.
摘要翻译：金属层沉积在材料层上。金属层包括可通过等离子体氧化或氮化转化为含介电金属的化合物的元素金属。在金属层上形成硬掩模部分。在硬掩模部分的至少一个第一侧壁上形成等离子体不可渗透的间隔物，同时硬掩模部分的至少一个第二侧壁物理暴露。进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。重复将硬掩模部分的表面拉回序列，腔蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的孔图案尺寸。

5. 发明申请

US20140027923A1 NON-LITHOGRAPHIC HOLE PATTERN FORMATION 有权
标题翻译：非平面孔型图形
公开(公告)号：US20140027923A1
公开(公告)日：2014-01-30
申请号：US13561133
申请日：2012-07-30
申请人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
发明人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
IPC分类号： H01L21/768 , H01L23/498
CPC分类号： H01L21/768 , H01L21/02244 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/0332 , H01L21/0337 , H01L21/32139 , H01L21/76816 , H01L23/498 , H01L29/0692 , H01L45/1691 , H01L2924/0002 , H01L2924/00
摘要： A metal layer is deposited over a material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation or nitridation. A hard mask portion is formed over the metal layer. A plasma impermeable spacer is formed on at least one first sidewall of the hard mask portion, while at least one second sidewall of the hard mask portion is physically exposed. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. A sequence of a surface pull back of the hard mask portion, cavity etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a hole pattern having a spacing that is not limited by lithographic minimum dimensions.
摘要翻译：金属层沉积在材料层上。金属层包括可通过等离子体氧化或氮化转化为含介电金属的化合物的元素金属。在金属层上形成硬掩模部分。在硬掩模部分的至少一个第一侧壁上形成等离子体不可渗透的间隔物，同时硬掩模部分的至少一个第二侧壁物理暴露。进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。重复将硬掩模部分的表面拉回序列，腔蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的孔图案尺寸。

6. 发明申请

US20140027917A1 NON-LITHOGRAPHIC LINE PATTERN FORMATION 有权
标题翻译：非线性线图形成
公开(公告)号：US20140027917A1
公开(公告)日：2014-01-30
申请号：US13561122
申请日：2012-07-30
申请人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
发明人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
IPC分类号： H01L21/308 , H01L23/48
CPC分类号： H01L21/3081 , H01L21/02244 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/67063 , Y10T428/24802
摘要： A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation and/or nitridation. A hard mask portion is formed over the metal layer. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. The sequence of a surface pull back of the hard mask portion, trench etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a line pattern having a spacing that is not limited by lithographic minimum dimensions.
摘要翻译：金属层沉积在下层材料层上。金属层包括可通过等离子体氧化和/或氮化转化为含介电金属的化合物的元素金属。在金属层上形成硬掩模部分。进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。重复将硬掩模部分的表面拉回序列，沟槽蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的线图案尺寸。

7. 发明申请

US20130270709A1 NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY 有权
标题翻译：非桥接接近于接近的结构
公开(公告)号：US20130270709A1
公开(公告)日：2013-10-17
申请号：US13443963
申请日：2012-04-11
申请人： Chiahsun Tseng , Jin Liu , Lei Zhuang
发明人： Chiahsun Tseng , Jin Liu , Lei Zhuang
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L23/481 , H01L21/0337 , H01L21/3086 , H01L21/31144 , H01L21/743 , H01L21/76816 , H01L21/76829 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.
摘要翻译：第一光致抗蚀剂层被图案化，第一图案包括在要形成的两个相邻通孔的区域之间的区域中的开口。将第一光致抗蚀剂中的开口转移到模板层中以在其中形成线沟槽。通过沉积不完全填充沟槽的连续间隔层来减小沟槽的横向尺寸。保形地沉积耐蚀刻材料层并填充沟槽，随后凹入以形成填充沟槽的耐蚀刻材料部分。施加第二光致抗蚀剂层并用第二图案图案化，其包括包括两个通孔的区域和其间的区域的开口。第二图案与耐蚀刻材料部分的图案的互补点的复合图案通过模板层传送。

8. 发明授权

US09245788B2 Non-bridging contact via structures in proximity 有权
标题翻译：非桥接接触通过接近的结构
公开(公告)号：US09245788B2
公开(公告)日：2016-01-26
申请号：US13443963
申请日：2012-04-11
申请人： Chiahsun Tseng , Jin Liu , Lei Zhuang
发明人： Chiahsun Tseng , Jin Liu , Lei Zhuang
IPC分类号： H01L21/768 , H01L23/48 , H01L21/74 , H01L21/033 , H01L21/308 , H01L21/311
CPC分类号： H01L23/481 , H01L21/0337 , H01L21/3086 , H01L21/31144 , H01L21/743 , H01L21/76816 , H01L21/76829 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.
摘要翻译：第一光致抗蚀剂层被图案化，第一图案包括在要形成的两个相邻通孔的区域之间的区域中的开口。将第一光致抗蚀剂中的开口转移到模板层中以在其中形成线沟槽。通过沉积不完全填充沟槽的连续间隔层来减小沟槽的横向尺寸。保形地沉积耐蚀刻材料层并填充沟槽，随后凹入以形成填充沟槽的耐蚀刻材料部分。施加第二光致抗蚀剂层并用第二图案图案化，其包括包括两个通孔的区域和其间的区域的开口。第二图案与耐蚀刻材料部分的图案的互补点的复合图案通过模板层传送。

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