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1. 发明授权

US5089239A Wire vibration prevention mechanism for a single crystal pulling apparatus 失效
标题翻译：单晶拉丝装置的电线振动预防机制
公开(公告)号：US5089239A
公开(公告)日：1992-02-18
申请号：US509846
申请日：1990-04-17
申请人： Koji Mizuishi , Isamu Harada , Yasushi Nakamura , Michiaki Oda , Seiichiro Ohtsuka , Yoshihiro Hirano , Masahiko Urano
发明人： Koji Mizuishi , Isamu Harada , Yasushi Nakamura , Michiaki Oda , Seiichiro Ohtsuka , Yoshihiro Hirano , Masahiko Urano
IPC分类号： C30B15/20 , C30B15/30
CPC分类号： C30B15/30 , C30B15/20 , Y10T117/1072
摘要： A single crystal pulling apparatus having a wire which is used to pull a crystal is provided with a novel wire vibration prevention mechanism. The wire vibration prevention mechanism includes wire restriction devices which restrict the movement of the wire to movement in the vertical direction. The wire restriction devices may be mechanically driven in the horizontal direction in order to center the pulled crystal. The wire restriction devices are driven by pneumatic air cylinders. Use of the wire vibration prevention mechanism avoids the formation of deformed growth of the pulled crystal and thus reduces the occurrence of dislocations in the pulled crystal.

2. 发明授权

US5106593A Apparatus for producing Czochralski-grown single crystals 失效
标题翻译：用于生产CZOCHRALSKI-GROWN单晶的装置
公开(公告)号：US5106593A
公开(公告)日：1992-04-21
申请号：US631850
申请日：1990-12-21
申请人： Koji Mizuishi , Michiaki Oda , Yasushi Nakamura , Seiichiro Ohtsuka , Atsushi Shiozawa , Fumio Yamada , Masahiro Mashimo , Tooru Ohara , Eizi Namiki
发明人： Koji Mizuishi , Michiaki Oda , Yasushi Nakamura , Seiichiro Ohtsuka , Atsushi Shiozawa , Fumio Yamada , Masahiro Mashimo , Tooru Ohara , Eizi Namiki
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/917 , Y10T117/106 , Y10T117/1072
摘要： An apparatus for producing a single crystal grown by Czochralski method includes a winding drum disposed in a case for winding up and down a flexible pull wire, a power transmission mechanism for driving the winding drum, and a bearing unit for rotatably supporting the winding drum. The power transmission mechanism and the bearing unit are disposed outside the case and isolated from the furnace atmosphere surrounding the winding drum and the pull wire in the case. With this construction, metallic dust produced by abrasion from the power transmission mechanism and the bearing unit has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire.

3. 发明授权

US5868835A Apparatus for recharging of silicon granules in a czochralski single crystal growing operation 失效
标题翻译：用于在切克萨斯基单晶生长操作中对硅颗粒再充电的装置
公开(公告)号：US5868835A
公开(公告)日：1999-02-09
申请号：US911352
申请日：1997-08-07
申请人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
发明人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
IPC分类号： C30B15/20 , C30B15/02 , C30B29/06 , C30B35/00
CPC分类号： C30B15/02 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.
摘要翻译：包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量供应管道中的滞留或备用供应。

4. 发明授权

US5690733A Method for recharging of silicon granules in a Czochralski single crystal growing operation 失效
标题翻译：在Czochralski单晶生长操作中对硅颗粒再充电的方法
公开(公告)号：US5690733A
公开(公告)日：1997-11-25
申请号：US552494
申请日：1995-11-09
申请人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
发明人： Naoki Nagai , Michiaki Oda , Seiichiro Ohtsuka , Isamu Harada
IPC分类号： C30B15/20 , C30B15/02 , C30B29/06 , C30B35/00 , C30B15/04
CPC分类号： C30B15/02 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.
摘要翻译：包括进料器和进料管道的再充电系统在通过切克劳斯基法生长单晶硅棒的运行或操作之后将多晶硅颗粒补给到坩埚中，从而准备下一次晶体生长。进料管道中硅颗粒的滞留量或备用供应量由供料管道上提供的传感器检测。通过根据传感器中产生的信号控制硅颗粒从进料器到进料管的进料速率和/或坩埚的下降速度来确保硅颗粒的平滑和高速进料量作为量供应管道中的滞留或备用供应。

5. 发明授权

US5020775A Isolation valve used in a single crystal pulling apparatus 失效
标题翻译：隔离阀用于单晶拉制装置
公开(公告)号：US5020775A
公开(公告)日：1991-06-04
申请号：US495964
申请日：1990-03-20
申请人： Atsushi Iwasaki , Koji Mizuishi , Michiaki Oda
发明人： Atsushi Iwasaki , Koji Mizuishi , Michiaki Oda
IPC分类号： F16K3/18 , C30B15/00 , H01L21/208
CPC分类号： C30B15/00 , Y10S251/90
摘要： An isolation valve used in a single crystal pulling apparatus, having a frame (11), a vertical passageway for communication between a main chamber and an upper pull chamber of the single crystal pulling apparatus, a shaft (13) capable of turning about its axis and reciprocating vertically, a lever (20) for turning the shaft, a drive means (18) for reciprocating the shaft (13), an arm (14) fixed to the shaft (13), a circular shutter (15) held by the arm (14) for closing and opening the vertical passageway, and a flange (9) defining a hole which communicates the passageway with the main chamber, wherein a cylindrical cavity is made in the bottom of the circular shutter (15); the flange (9) has a circular raised rim (9b) extending upward whose outer diameter is slightly smaller than the diameter of the cylindrical cavity of the shutter; and an endless circular seal means (17) is embedded partially in either the external vertical wall of the raised rim (9b) of the flange or the internal vertical wall of the shutter (15).

6. 发明授权

US5900055A Method of manufacturing silicon monocrystal by continuously charged Czochralski method 失效
标题翻译：通过连续充电的Czochralski法制造单晶硅的方法
公开(公告)号：US5900055A
公开(公告)日：1999-05-04
申请号：US829894
申请日：1997-03-25
申请人： Naoki Nagai , Koji Mizuishi , Michiaki Oda
发明人： Naoki Nagai , Koji Mizuishi , Michiaki Oda
IPC分类号： C30B15/04 , C30B29/06 , H01L21/208 , C30B15/02
CPC分类号： C30B15/04 , Y10T117/1052 , Y10T117/1056
摘要： A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged to the silicon melt stored in the double crucible before commencing pulling of a silicon monocrystal such that the ratio of the dopant concentration of the silicon melt stored in the outer crucible to the dopant concentration of the silicon melt stored in the inner crucible becomes greater than an effective segregation coefficient of the dopant. The silicon monocrystal is then pulled while silicon material is charged to the silicon melt within the outer crucible, during which the dopant concentration ratio becomes equal to the effective segregation coefficient and then becomes smaller than the effective segregation coefficient. When the dopant concentration ratio becomes smaller than the effective segregation coefficient, the dopant is charged to the silicon melt stored in the outer crucible. The above operation is repeated, so that the specific resistance of the silicon monocrystal pulled from the double crucible can be controlled within a desired range using commonly-employed dopant.
摘要翻译：根据连续充电的Czochralski法制造硅单晶，其中使用包括通过孔彼此连通的外坩埚和内坩埚的双坩埚。在开始拉制硅单晶之前，将掺杂剂充入存储在双坩埚中的硅熔体，使得存储在外坩埚中的硅熔体的掺杂剂浓度与存储在内坩埚中的硅熔体的掺杂剂浓度之比变得大于掺杂剂的有效偏析系数。然后拉伸硅单晶，同时将硅材料充入外坩埚内的硅熔体，在此期间掺杂剂浓度比变得等于有效偏析系数，然后变得小于有效偏析系数。当掺杂剂浓度比变得小于有效偏析系数时，掺杂剂被加到存储在外坩埚中的硅熔体中。重复上述操作，使得从双坩埚拉出的单晶硅的电阻率可以使用常用的掺杂剂控制在期望的范围内。

7. 发明授权

US5330729A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5330729A
公开(公告)日：1994-07-19
申请号：US833986
申请日：1992-02-10
申请人： Michiaki Oda , Koji Mizuishi
发明人： Michiaki Oda , Koji Mizuishi
IPC分类号： C30B11/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B15/02
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling apparatus of the Czochralski method type wherein the cylindrical heater is supported not only by the two existing electrodes which are vertically shiftable but also by one or more vertical shafts, which may be electrodes or electrically insulated dummy electrodes; the vertical shafts are capable of shifting vertically in synchronism with the existing two electrodes, and are arranged in a manner such that the existing two electrodes and the vertical shafts are at regular intervals along the bottom circumference of the cylindrical heater.
摘要翻译： Czochralski方法式的单晶拉制装置，其中圆柱形加热器不仅由可垂直移动的两个现有电极支撑，而且由一个或多个垂直轴支撑，垂直轴可以是电极或电绝缘的虚拟电极; 垂直轴能够与现有的两个电极同步地垂直移动，并且以使得现有的两个电极和垂直轴沿着圆柱形加热器的底部圆周规则间隔的方式布置。

8. 发明授权

US5254319A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5254319A
公开(公告)日：1993-10-19
申请号：US829900
申请日：1992-02-03
申请人： Michiaki Oda , Koji Mizuishi
发明人： Michiaki Oda , Koji Mizuishi
IPC分类号： C30B15/00 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/10
CPC分类号： C30B15/30 , C30B15/00 , Y10T117/106 , Y10T117/1072
摘要： Aa single crystal pulling apparatus installed on a frame body further includes a second frame body which is founded independently from the main chamber to rigidly support the winder assembly, and a hermetical and flexible tube which is provided between the winder assembly and the pull chamber to prevent any stress and vibration from travelling from the winder assembly to the pull chamber and vice versa, while providing a communication passage between the winder assembly and the pull chamber.

9. 发明授权

US5419277A Method and apparatus for producing a Czochralski growth semiconductor single-crystal 失效
标题翻译：生产Czochralski生长半导体单晶的方法和设备
公开(公告)号：US5419277A
公开(公告)日：1995-05-30
申请号：US191658
申请日：1994-02-04
申请人： Masahiko Urano , Michiaki Oda
发明人： Masahiko Urano , Michiaki Oda
IPC分类号： C30B15/26 , C30B27/02 , H01L21/208 , C30B35/00
CPC分类号： C30B15/26 , Y10T117/1004 , Y10T117/1068
摘要： An apparatus for producing a semiconductor single-crystal grown by the Czochralski method includes a reference reflector disposed at the lower end of a gas rectifying tube, first and second optical systems disposed above the reference reflector for changing the direction of propagation of light from the horizontal to the vertical, and vice versa, a first position sensor composed of a first light source for emitting a light beam in a horizontal direction toward the first optical system, and a first photosensitive member which receives a reflection light reflected from the melt surface in a crucible, a second position sensor composed of a second light source for emitting a light beam in a horizontal direction toward the second optical system, and a second photosensitive member which receives a reflection light reflected from the reference reflector. With this construction, the distance between the gas rectifying tube and the melt surface can be detected and maintained constant throughout the crystal growth process with the result that the crystal quality, especially the concentration of dopant and impurities, such as oxygen and carbon, is uniform.
摘要翻译：用于制造通过切克劳斯基法生长的半导体单晶的装置包括设置在气体整流管的下端的参考反射器，设置在参考反射器上方的第一和第二光学系统，用于改变来自水平面的光的传播方向第一位置传感器，由第一光源构成，该第一光源用于向第一光学系统沿水平方向发射光束;以及第一感光部件，其接收从熔融表面反射的反射光，坩埚，由第二光源组成的第二位置传感器，用于沿水平方向朝向第二光学系统发射光束;以及第二感光部件，其接收从参考反射器反射的反射光。利用这种结构，可以在整个晶体生长过程中检测并保持气体整流管和熔体表面之间的距离，结果是晶体质量，特别是掺杂剂和杂质如氧和碳的浓度是均匀的。

10. 发明授权

US6159283A Apparatus and method for measuring mechanical strength of neck portion of seed crystal and method for producing silicon single crystal 有权
标题翻译：用于测量晶种颈部机械强度的装置和方法以及用于生产硅单晶的方法
公开(公告)号：US6159283A
公开(公告)日：2000-12-12
申请号：US267214
申请日：1999-03-12
申请人： Isamu Harada , Michiaki Oda , Masaru Toyoshima , Toshinari Murai , Eiichi Iino
发明人： Isamu Harada , Michiaki Oda , Masaru Toyoshima , Toshinari Murai , Eiichi Iino
IPC分类号： G01N3/02 , G01N3/08 , C30B15/24
CPC分类号： G01N3/08 , G01N2203/0286 , Y10S117/911 , Y10T117/1068
摘要： Apparatus for measuring the mechanical strength of a neck portion of a silicon seed crystal used for growing a silicon crystal by the Czochralski method includes a seed chuck for holding the seed crystal of a test sample and an end of a wire hung from an upper hook. A crystal holder which holds the other end part of the test sample from below is tied to a lower hook with another wire to support the holder. The apparatus includes means for pulling the hook at a given rate, and measuring means for continuously measuring tensile load. Such apparatus and the method thereby provide accurate measurement of mechanical strength of the neck portion of the silicon seed crystal with good precision and reproducibility. A single crystal ingot is grown under conditions affording good balance of productivity and safety.
摘要翻译：用于测量用于通过切克劳斯基法生长硅晶体的硅晶种的颈部的机械强度的装置包括用于保持测试样品的晶种和从上钩挂起的线的末端的种子卡盘。从下方将测试样品的另一端部分保持的结晶保持器用另一根线连接到下钩以支撑保持器。该装置包括用于以给定速率拉动钩的装置，以及用于连续测量拉伸载荷的测量装置。这样的装置和方法能够以良好的精度和再现性精确地测量硅晶种的颈部的机械强度。在提供良好的生产率和安全性平衡的条件下生长单晶锭。

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