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    • 4. 发明申请
    • Megavoltage imaging with a photoconductor based sensor
    • 用基于感光体的传感器进行Megavoltage成像
    • US20070023853A1
    • 2007-02-01
    • US11193162
    • 2005-07-29
    • Larry PartainGeorge Zentai
    • Larry PartainGeorge Zentai
    • H01L31/00
    • G01T1/24
    • A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
    • 用于检测兆伏特(MV)辐射的光电检测器包括半导体转换层,其具有与第一表面相对布置的第一表面和第二表面,耦合到第一表面的第一电极,耦合到第二表面的第二电极和低密度 衬底,包括耦合到与半导体转换层相对的第二电极的检测器阵列。 光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子,使得光电子能够被转换层接收并转换成足够的再充电载体,以便由检测器阵列检测。