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1. 发明授权

US07045472B2 Method and apparatus for selectively altering dielectric properties of localized semiconductor device regions 有权
标题翻译：用于选择性地改变局部半导体器件区域的介电特性的方法和装置
公开(公告)号：US07045472B2
公开(公告)日：2006-05-16
申请号：US10709313
申请日：2004-04-28
申请人： Edward C. Cooney, III , William T. Motsiff
发明人： Edward C. Cooney, III , William T. Motsiff
IPC分类号： H01L21/31 , H01L21/469 , H01L21/26
CPC分类号： H01L21/7682 , H01L21/02107 , H01L21/02203 , H01L21/02318 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L2224/05093 , H01L2924/01019 , H01L2924/01077
摘要： A method for selectively altering dielectric properties of a semi-conductor device. In an exemplary embodiment, the method includes applying energy to a local region of interest, the local region of interest including a thermally alterable dielectric such that said heating caused by the applied energy causes a dielectric constant of the thermally alterable dielectric to change.
摘要翻译：一种用于选择性地改变半导体器件的介电特性的方法。在示例性实施例中，该方法包括将能量施加到局部感兴趣区域，局部感兴趣区域包括可热改变的电介质，使得由所施加的能量引起的所述加热导致热可变电介质的介电常数发生变化。

2. 发明授权

US06982227B2 Single and multilevel rework 失效
标题翻译：单层和多层返工
公开(公告)号：US06982227B2
公开(公告)日：2006-01-03
申请号：US10687294
申请日：2003-10-16
申请人： Edward C. Cooney, III , Robert M. Geffken , Vincent J. McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
发明人： Edward C. Cooney, III , Robert M. Geffken , Vincent J. McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/76801 , H01L21/76807 , H01L21/76892 , H01L23/525 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/00
摘要： A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.
摘要翻译：一种重新加工BEOL（处理线的后端）金刚石冶金的金属化水平的方法包括在衬底上形成多个BEOL金属化水平，在BEOL金属化水平中形成线和通孔部分，选择性地去除BEOL金属化中的至少一个以暴露线路和通孔部分，并且用至少一个新的BEOL金属化水平替换去除的BEOL金属化水平，其中BEOL金属化水平包括第一介电层和第二介电层，并且其中第一介电层包括下部介电常数材料比第二介电层。

3. 发明授权

US06674168B1 Single and multilevel rework 失效
标题翻译：单层和多层返工
公开(公告)号：US06674168B1
公开(公告)日：2004-01-06
申请号：US10248452
申请日：2003-01-21
申请人： Edward C. Cooney, III , Robert M Geffken , Vincent J McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
发明人： Edward C. Cooney, III , Robert M Geffken , Vincent J McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
IPC分类号： H01L2100
CPC分类号： H01L21/76808 , H01L21/76801 , H01L21/76807 , H01L21/76892 , H01L23/525 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/00
摘要： A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.
摘要翻译：一种重新加工BEOL（处理线的后端）金刚石冶金的金属化水平的方法包括在衬底上形成多个BEOL金属化水平，在BEOL金属化水平中形成线和通孔部分，选择性地去除BEOL金属化中的至少一个以暴露线路和通孔部分，并且用至少一个新的BEOL金属化水平替换去除的BEOL金属化水平，其中BEOL金属化水平包括第一介电层和第二介电层，并且其中第一介电层包括下部介电常数材料比第二介电层。

4. 发明授权

US07786549B2 Antifuse structure and system for closing thereof 失效
标题翻译：防腐结构及其闭合系统
公开(公告)号：US07786549B2
公开(公告)日：2010-08-31
申请号：US11527343
申请日：2006-09-26
申请人： William T. Motsiff , William R. Tonti , Richard Q. Williams
发明人： William T. Motsiff , William R. Tonti , Richard Q. Williams
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for providing an antifuse which is closed by laser energy with an electrostatic assist. Two or more metal segments are formed over a semiconductor structure with an air gap or a porous dielectric between the metal segments. Pulsed laser energy is applied to one or more of the metal segments while a voltage potential is applied between the metal segments to create an electrostatic field. The pulsed laser energy softens the metal segment, and the electrostatic field causes the metal segments to move into contact with each other. The electrostatic field reduces the amount of laser energy which must be applied to the semiconductor structure to close the antifuse.
摘要翻译：一种用于提供通过静电辅助由激光能量闭合的反熔丝的结构和方法。在半导体结构之间形成两个或更多个金属段，在金属段之间具有气隙或多孔电介质。将脉冲激光能量施加到一个或多个金属片段，同时在金属片段之间施加电压电位以产生静电场。脉冲激光能量软化金属片段，静电场使金属片段彼此接触。静电场减少必须施加到半导体结构以关闭反熔丝的激光能量的量。

5. 发明授权

US07064409B2 Structure and programming of laser fuse 有权
标题翻译：激光熔丝的结构和编程
公开(公告)号：US07064409B2
公开(公告)日：2006-06-20
申请号：US10605885
申请日：2003-11-04
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。熔丝连接在第一电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

6. 发明授权

US06835973B2 Antifuse for use with low &kgr; dielectric foam insulators 失效
标题翻译：用于低kappa电介质泡沫绝缘子的防腐剂
公开(公告)号：US06835973B2
公开(公告)日：2004-12-28
申请号：US10159573
申请日：2002-05-31
申请人： Timothy H. Daubenspeck , William A. Klaasen , William T. Motsiff , Rosemary A. Previti-Kelly , Jed H. Rankin
发明人： Timothy H. Daubenspeck , William A. Klaasen , William T. Motsiff , Rosemary A. Previti-Kelly , Jed H. Rankin
IPC分类号： H01L2710
CPC分类号： H01L23/5254 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A fusible link for a semiconductor device comprises an insulating substrate and a conductive line pair on the surface of the insulating substrate, with the conductive line pair having spaced ends. A polymer is disposed over the insulating substrate and between the conductive line pair ends. The polymer is capable of being changed from a non-conductive to a conductive state upon exposure to an energy beam. Preferably, the polymer comprises a polyimide, more preferably, a polymer/onium salt mixture, most preferably, a polyaniline polymer doped with a triphenylsufonium salt. The link may further comprise a low &kgr; nanopore/nanofoam dielectric material adjacent the conductive line ends.
摘要翻译：用于半导体器件的可熔连接件包括在绝缘衬底的表面上的绝缘衬底和导电线对，导电线对具有间隔开的端部。聚合物设置在绝缘基板之上和导线对端之间。聚合物能够在暴露于能量束时从非导电状态改变为导电状态。优选地，聚合物包括聚酰亚胺，更优选聚合物/鎓盐混合物，最优选掺杂有三苯基鎓盐的聚苯胺聚合物。该连接可以进一步包括邻近导线末端的低kappa纳米孔/纳米电流介电材料。

7. 发明授权

US06827868B2 Thinning of fuse passivation after C4 formation 失效
公开(公告)号：US06827868B2
公开(公告)日：2004-12-07
申请号：US10065885
申请日：2002-11-27
申请人： Timothy H. Daubenspeck , Jeffrey P. Gambino , William T. Motsiff
发明人： Timothy H. Daubenspeck , Jeffrey P. Gambino , William T. Motsiff
IPC分类号： H01L2182
CPC分类号： H01L23/5258 , H01L2224/05001 , H01L2224/05022 , H01L2224/05026 , H01L2224/05027 , H01L2224/05184 , H01L2224/05572 , H01L2224/056 , H01L2224/11 , H01L2924/0002 , H01L2924/00 , H01L2924/00014 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166
摘要： A method of forming a fuse structure in which passivating material over the fuse has a controlled, substantially uniform thickness that is provided after C4 metallurgy formation. A laser fuse deletion process for the fuse formed by this method is also disclosed.

8. 发明授权

US06512292B1 Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces 失效
标题翻译：具有嵌入式热导体的半导体芯片结构和设置在相对基板表面上的散热器
公开(公告)号：US06512292B1
公开(公告)日：2003-01-28
申请号：US09660270
申请日：2000-09-12
申请人： Douglas S. Armbrust , William F. Clark , William A. Klaasen , William T. Motsiff , Timothy D. Sullivan
发明人： Douglas S. Armbrust , William F. Clark , William A. Klaasen , William T. Motsiff , Timothy D. Sullivan
IPC分类号： H01L2312
CPC分类号： H01L23/5222 , H01L23/3677 , H01L23/5329 , H01L2924/0002 , H01L2924/10158 , H01L2924/00
摘要： Semiconductor chip structures are provided with embedded thermal conductors for removing heat from one or more electrically conductive circuit members thereof, wherein the circuit members are formed on one or more dielectric layers above a substrate, each layer having a low dielectric constant and a low thermal conductivity. One or more cooling posts, for example, multiple thermally conductive plugs, are selectively disposed within the semiconductor chip structure adjacent to one or more electrically conductive members and thermally coupled thereto so that heat produced by the members is transferred into and through the cooling posts for forwarding to the substrate and/or to an upper surface of the semiconductor chip structure. The backside of the substrate has a thermal sink thermally coupled thereto and electrically isolated from the substrate. The thermal sink includes one or more thermally conductive via structures embedded within the substrate and aligned to thermally contact to the cooling posts disposed above the substrate.
摘要翻译：半导体芯片结构设置有用于从一个或多个导电电路构件去除热量的嵌入式热导体，其中电路构件形成在衬底上方的一个或多个电介质层上，每层具有低介电常数和低热导率。一个或多个冷却柱，例如多个导热塞，被选择性地设置在半导体芯片结构内邻近一个或多个导电构件并与其热耦合，使得由构件产生的热量被传送到冷却柱中并通过冷却柱转移到衬底和/或到半导体芯片结构的上表面。衬底的背面具有热耦合到其上并与衬底电隔离的散热器。散热器包括一个或多个热传导通孔结构，其嵌入衬底内并对准以与设置在衬底上方的冷却柱热接触。

9. 发明授权

US06492207B2 Method for making a pedestal fuse 失效
标题翻译：制作基座保险丝的方法
公开(公告)号：US06492207B2
公开(公告)日：2002-12-10
申请号：US09844125
申请日：2001-04-26
申请人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
发明人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
IPC分类号： H01L2177
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating a metallization fuse line is disclosed. The structure can be formed on a semiconductor substrate, including an insulator structure formed on the substrate, the insulator structure having an upper layer and a lower layer, the upper being thinner than the lower, the insulator structure having a plurality of openings of varying depth, and a metal structure inlaid in the insulator structure, the metal structure having first and second portions and a third portion there between that is substantially more resistive than the first and second portions, the third portion having a thickness substantially- similar to the thickness of the upper layer of the insulator structure. The upper layer includes a nitride, the lower layer includes an oxide and the metal structure includes copper. The fuse structure allows formation of “easy to laser delete” thin metal fuses within segments of thick metal lines. This applies to wiring layers formed from “high” melting temperature metals and those defined using a damascene process. For example, copper back end of line (Cu BEOL) damascene wiring, as used with CMOS can use the invention. The technique achieves high yield fusing for technologies that use thick wiring layers. The structure separates the thickness of the fuse segment from the remainder of the wiring line. The structure can be used with very thick, e.g., >1.2&mgr; wiring and very thin, e.g.,
摘要翻译：公开了一种制造金属化熔丝线的结构和方法。该结构可以形成在半导体衬底上，包括形成在衬底上的绝缘体结构，绝缘体结构具有上层和下层，上部比下部更薄，绝缘体结构具有多个不同深度的开口以及镶嵌在绝缘体结构中的金属结构，具有第一和第二部分的金属结构和在其之间的第三部分基本上比第一和第二部分更具有阻力，第三部分的厚度基本上类似于绝缘体结构的上层。上层包括氮化物，下层包括氧化物，金属结构包括铜。熔丝结构允许在厚金属线段内形成“易于激光删除”的薄金属保险丝。这适用于由“高”熔融金属形成的布线层和使用镶嵌工艺定义的布线层。例如，与CMOS一起使用的铜后端（Cu BEOL）镶嵌布线可以使用本发明。该技术实现了使用厚布线层的技术的高产率熔合。该结构将熔丝段的厚度与布线的其余部分分开。该结构可以使用非常厚的例如>1.2μm的布线和非常薄的例如<0.5mu的熔丝。

10. 发明授权

US06261873B1 Pedestal fuse 失效
标题翻译：基座保险丝
公开(公告)号：US06261873B1
公开(公告)日：2001-07-17
申请号：US09303355
申请日：1999-04-29
申请人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
发明人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
IPC分类号： H01L2182
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating a metallization fuse line is disclosed. The structure can be formed on a semiconductor substrate, including an insulator structure formed on the substrate, the insulator structure having an upper layer and a lower layer, the upper being thinner than the lower, the insulator structure having a plurality of openings of varying depth, and a metal structure inlaid in the insulator structure, the metal structure having first and second portions and a third portion there between that is substantially more resistive than the first and second portions, the third portion having a thickness substantially similar to the thickness of the upper layer of the insulator structure. The upper layer includes a nitride, the lower layer includes an oxide and the metal structure includes copper. The fuse structure allows formation of “easy to laser delete” thin metal fuses within segments of thick metal lines. This applies to wiring layers formed from “high” melting temperature metals and those defined using a damascene process. For example, copper back end of line (Cu BEOL) damascene wiring, as used with CMOS can use the invention. The technique achieves high yield fusing for technologies that use thick wiring layers. The structure separates the thickness of the fuse segment from the remainder of the wiring line. The structure can be used with very thick, e.g., >1.2&mgr; wiring and very thin, e.g.,
摘要翻译：公开了一种制造金属化熔丝线的结构和方法。该结构可以形成在半导体衬底上，包括形成在衬底上的绝缘体结构，绝缘体结构具有上层和下层，上部比下部更薄，绝缘体结构具有多个不同深度的开口以及镶嵌在绝缘体结构中的金属结构，具有第一和第二部分的金属结构和在其之间的第三部分比第一和第二部分具有更大的阻力，第三部分的厚度基本上类似于上层绝缘体结构。上层包括氮化物，下层包括氧化物，金属结构包括铜。熔丝结构允许在厚金属线段内形成“易于激光删除”的薄金属保险丝。这适用于由“高”熔融金属形成的布线层和使用镶嵌工艺定义的布线层。例如，与CMOS一起使用的铜后端（Cu BEOL）镶嵌布线可以使用本发明。该技术实现了使用厚布线层的技术的高产率熔合。该结构将熔丝段的厚度与布线的其余部分分开。该结构可以使用非常厚的例如>1.2μm的布线和非常薄的例如<0.5mu的熔丝。

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