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1. 发明授权

US07064409B2 Structure and programming of laser fuse 有权
标题翻译：激光熔丝的结构和编程
公开(公告)号：US07064409B2
公开(公告)日：2006-06-20
申请号：US10605885
申请日：2003-11-04
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。熔丝连接在第一电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

2. 发明授权

US07981732B2 Programming of laser fuse 有权
标题翻译：激光保险丝编程
公开(公告)号：US07981732B2
公开(公告)日：2011-07-19
申请号：US12105366
申请日：2008-04-18
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L21/268
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The laser beam is directed to the fuse link, the laser beam being controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off.
摘要翻译：激光熔丝编程方法。激光熔丝具有包括具有在暴露于激光束之后改变其电阻的特性的材料的熔断体。激光束被引导到熔丝链，激光束被控制，使得响应于激光束对熔丝链的冲击，熔丝链的电阻改变，但是熔丝链不会被吹掉。

3. 发明申请

US20080194064A1 PROGRAMMING OF LASER FUSE 有权
标题翻译：激光熔丝的编程
公开(公告)号：US20080194064A1
公开(公告)日：2008-08-14
申请号：US12105366
申请日：2008-04-18
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L21/268
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The laser beam is directed to the fuse link, the laser beam being controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off.
摘要翻译：激光熔丝编程方法。激光熔丝具有包括具有在暴露于激光束之后改变其电阻的特性的材料的熔断体。激光束被引导到熔丝链，激光束被控制，使得响应于激光束对熔丝链的冲击，熔丝链的电阻改变，但是熔丝链不会被吹掉。

4. 发明授权

US07384824B2 Structure and programming of laser fuse 有权
标题翻译：激光熔丝的结构和编程
公开(公告)号：US07384824B2
公开(公告)日：2008-06-10
申请号：US11362680
申请日：2006-02-27
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L21/82 , H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的电介质层。熔丝连接在电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

5. 发明授权

US4568631A Process for delineating photoresist lines at pattern edges only using image reversal composition with diazoquinone 失效
标题翻译：仅使用具有重氮醌的图像反转组合物在图案边缘处描绘光致抗蚀剂线的方法
公开(公告)号：US4568631A
公开(公告)日：1986-02-04
申请号：US605088
申请日：1984-04-30
申请人： Dinesh A. Badami , Mark C. Hakey , Holger Moritz
发明人： Dinesh A. Badami , Mark C. Hakey , Holger Moritz
IPC分类号： H01L21/027 , G03F7/039 , G03F7/20 , G03F7/26 , G03F7/40 , H01L21/30 , G03C5/00
CPC分类号： G03F7/40 , G03F7/039 , G03F7/20 , G03F7/2022
摘要： An optical photolithographic process in which resist lines having widths in the micron and sub-micron range are produced without the use of a fine line photomask. A positive photoresist having an additive for image reversal is applied to the surface of a semiconductor substrate. The photoresist is exposed through a photomask to ultraviolet light. The edges of the opaque sections of the mask diffract the ultraviolet light, forming partially exposed areas between the exposed and unexposed areas formed in the photoresist. After development in a solvent to remove the exposed areas, the photoresist undergoes an image reversal process. The photoresist is first baked at 100.degree. C. for 30 minutes. During this bake step, the photoactive decomposition products present in the partially exposed areas react, freezing the solubility of the partially exposed areas with respect to that of the unexposed areas. The photoresist is then blanket exposed and developed in a solvent, leaving the partially exposed areas on the substrate. The resulting thin resist lines can be used to form narrow isolation trenches by coating the substrate with a quartz film and lifting off the resist lines.
摘要翻译：在不使用细线光掩模的情况下制造具有微米和亚微米范围宽度的抗蚀剂线的光学光刻工艺。将具有用于图像反转的添加剂的正性光致抗蚀剂施加到半导体衬底的表面。光致抗蚀剂通过光掩模曝光到紫外光。掩模的不透明部分的边缘衍射紫外光，在形成在光致抗蚀剂中的暴露区域和未曝光区域之间形成部分暴露的区域。在溶剂中显影以除去曝光区域后，光致抗蚀剂经历图像反转过程。光致抗蚀剂首先在100℃下烘烤30分钟。在该烘烤步骤期间，存在于部分暴露的区域中的光敏分解产物反应，冻结部分曝光的区域相对于未曝光区域的溶解度。然后将光致抗蚀剂铺展在一个溶剂中，将部分暴露的区域留在衬底上。所得到的薄抗蚀剂线可以用于通过用石英膜涂覆基板并提起抗蚀剂线来形成窄的隔离沟槽。

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