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1. 发明申请

US20060043065A1 Gasless high voltage high contact force wafer contact-cooling electrostatic chuck 有权
公开(公告)号：US20060043065A1
公开(公告)日：2006-03-02
申请号：US10929104
申请日：2004-08-26
申请人： Douglas Buchberger , Daniel Hoffman , Kartik Ramaswamy , Andrew Nguyen , Hiorji Hanawa , Kenneth Collins , Amir Al-Bayati
发明人： Douglas Buchberger , Daniel Hoffman , Kartik Ramaswamy , Andrew Nguyen , Hiorji Hanawa , Kenneth Collins , Amir Al-Bayati
IPC分类号： B44C1/22
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

2. 发明授权

US06524432B1 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：具有感应天线的平行板电极等离子体反应器和等离子体离子密度的可调径向分布
公开(公告)号：US06524432B1
公开(公告)日：2003-02-25
申请号：US09539814
申请日：2000-03-30
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

3. 发明授权

US06063233A Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna 失效
公开(公告)号：US06063233A
公开(公告)日：2000-05-16
申请号：US733555
申请日：1996-10-21
申请人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
发明人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
IPC分类号： H05H1/46 , C23C16/517 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/683 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32458 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346
摘要： The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material. The reactor can include a gas manifold in the cold body communicable with a source of the thermally conductive gas an inlet through the cold body from the gas manifold and opening out to the cold body interface. The reactor can further include an O-ring apparatus sandwiched between the cold body and the thermal conductor and defining a gas-containing volume in the cold body interface of nearly infinitesimal thickness in communication with the inlet from the cold body. More generally, the reactor can include the facilitation of thermal transfer across an interface between a hot and/or cold sink and any part exposed to the reactor chamber interior atmosphere, such as the ceiling, wall or polymer-hardening precursor ring, for example, by the insertion into that interface of a thermally conductive gas or substance.

4. 发明授权

US5990017A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US5990017A
公开(公告)日：1999-11-23
申请号：US104550
申请日：1998-06-25
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

5. 发明申请

US20070091540A1 Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control 审中-公开
标题翻译：使用多区域前馈热控制在等离子体反应器中处理工件的方法
公开(公告)号：US20070091540A1
公开(公告)日：2007-04-26
申请号：US11409184
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes inner and outer zone evaporators inside respective inner and outer zones of the electrostatic chuck, while pressurizing inner and outer zones of a workpiece-to-chuck interface with a thermally conductive gas, and sensing conditions in the chamber including inner and outer zone temperatures near the workpiece. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using thermal modeling to estimate respective changes in thermal conditions of the coolant in the inner and outer zone evaporators, respectively, that would hold temperatures measured in the inner and outer electrostatic chuck zones, respectively, nearly constant by compensating for the next scheduled change in RF heat load, and making the respective changes in thermal conditions of the coolant in inner and outer zone evaporators prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
摘要翻译：一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过制冷回路，所述制冷回路在静电吸盘的内部和外部区域内包括内部和外部区域蒸发器同时用导热气体对工件 - 卡盘界面的内部和外部区域加压，以及感测室中包括工件附近的内部和外部区域温度的条件。该方法还包括获得工件上的RF热负荷的下一个预定的改变，并且使用热模型来分别估计在内部和外部区域蒸发器中的冷却剂的热条件的各自变化，其将保持在内部和外部测量的温度通过补偿下一个预定的RF热负荷变化，分别使静电吸盘区域几乎恒定，并且在下一次预定的改变时间之前通过头部开始使得内部和外部区域蒸发器中的冷却剂的热条件的各自变化与通过静电卡盘的热传播延迟有关。

6. 发明申请

US20070091538A1 Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops 有权
标题翻译：具有晶片背面热循环的等离子体反应器，两相内部基座热回路和控制两个回路的控制处理器
公开(公告)号：US20070091538A1
公开(公告)日：2007-04-26
申请号：US11408567
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在腔室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于将选定压力下的导热气体施加到每次形成的工件表面界面中工件被保持在表面上，并且蒸发器位于静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电吸盘中的温度传感器，能够模拟蒸发器和表面之间的热传递的热模型，其基于来自温度传感器和耦合到热模型的敏捷控制处理器的测量，并控制背侧气体压力源响应于来自所选压力的变化模型的预测，其将使由传感器测量的温度更接近所需温度。

7. 发明申请

US20070091537A1 Method for agile workpiece temperature control in a plasma reactor using a thermal model 有权
标题翻译：使用热模型的等离子体反应器中敏捷工件温度控制的方法
公开(公告)号：US20070091537A1
公开(公告)日：2007-04-26
申请号：US11408558
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.
摘要翻译：在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力从热模型。

8. 发明申请

US20070089834A1 Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
标题翻译：具有多区域热控制前馈控制装置的等离子体反应器
公开(公告)号：US20070089834A1
公开(公告)日：2007-04-26
申请号：US11408559
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和外部膨胀阀的制冷回路，用于控制冷却剂通过内部和外部蒸发器。反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和外部温度传感器。耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度传感器分别更接近所需的温度。

9. 发明申请

US20070023145A1 APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE 有权
标题翻译：设备等离子体和增强流动性的装置
公开(公告)号：US20070023145A1
公开(公告)日：2007-02-01
申请号：US11531479
申请日：2006-09-13
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： C23F1/00
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施方案一般涉及等离子体反应器。在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。内壁与上外壁和下外壁相对设置。在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

10. 发明申请

US20070097580A1 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
标题翻译：在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法
公开(公告)号：US20070097580A1
公开(公告)日：2007-05-03
申请号：US11410782
申请日：2006-04-24
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H02H5/04
CPC分类号： H01L21/67109
摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.
摘要翻译：在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂，工件支撑件的内部流动通道构成制冷回路的蒸发器。该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

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