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1. 发明授权

US07811834B2 Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the same 有权
标题翻译：形成铁电体层的方法和制造其的铁电电容器的制造方法
公开(公告)号：US07811834B2
公开(公告)日：2010-10-12
申请号：US12183657
申请日：2008-07-31
申请人： Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
发明人： Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
IPC分类号： H01L21/00
CPC分类号： C23C16/45523 , C23C16/409 , H01L28/56
摘要： A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.
摘要翻译：提供了形成铁电体层的方法。金属有机源气体被提供到第一时间段内提供氧化气体的室中，以在基板上形成铁电晶粒。通过使用脉冲方法在第一时间段内进行至少两次提供金属有机源气体的步骤来形成铁电层，以生长铁电晶粒。

2. 发明申请

US20090035877A1 METHODS OF FORMING A FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A FERROELECTRIC CAPACITOR INCLUDING THE SAME 有权
标题翻译：形成电介质层的方法和制造包括其中的电介质电容器的方法
公开(公告)号：US20090035877A1
公开(公告)日：2009-02-05
申请号：US12183657
申请日：2008-07-31
申请人： Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
发明人： Dong-Hyun Im , Ik-Soo Kim , Choong-Man Lee , Jang-Eun Heo , Sung-Ju Lee
IPC分类号： H01L21/02 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/409 , H01L28/56
摘要： A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.
摘要翻译：提供了形成铁电体层的方法。金属有机源气体被提供到第一时间段内提供氧化气体的室中，以在基板上形成铁电晶粒。通过使用脉冲方法在第一时间段内进行至少两次提供金属有机源气体的步骤来形成铁电层，以生长铁电晶粒。

3. 发明授权

US07585683B2 Methods of fabricating ferroelectric devices 有权
标题翻译：制造铁电体器件的方法
公开(公告)号：US07585683B2
公开(公告)日：2009-09-08
申请号：US11778880
申请日：2007-07-17
申请人： Dong-Hyun Im , Byoung-Jae Bae , Ik-Soo Kim , Jang-Eun Heo , Choong-Man Lee , Dong-Chul Yoo
发明人： Dong-Hyun Im , Byoung-Jae Bae , Ik-Soo Kim , Jang-Eun Heo , Choong-Man Lee , Dong-Chul Yoo
IPC分类号： H01L21/00
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/02318 , H01L21/31691 , H01L28/55
摘要： A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.
摘要翻译：制造铁电体元件的方法包括在反应室中的基板上形成铁电体层。在反应室中提供惰性气体，同时从其中卸载衬底，从而基本上抑制铁电层上的杂质层的形成。

4. 发明申请

US20090061538A1 Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the same 审中-公开
标题翻译：形成铁电电容器的方法和使用其制造半导体器件的方法
公开(公告)号：US20090061538A1
公开(公告)日：2009-03-05
申请号：US12222700
申请日：2008-08-14
申请人： Jang-Eun Heo , Choong-Man Lee , Ik-Soo Kim , Dong-Hyun Im
发明人： Jang-Eun Heo , Choong-Man Lee , Ik-Soo Kim , Dong-Hyun Im
IPC分类号： H01L21/02
CPC分类号： H01L28/65 , H01G4/085 , H01G4/33 , H01L21/02197 , H01L21/02266 , H01L21/0228 , H01L21/31691 , H01L27/11507 , H01L28/56
摘要： In a method of forming a ferroelectric capacitor, a lower electrode layer is formed on a substrate. A first crystalline layer is formed on the lower electrode layer. A ferroelectric layer is formed on the first crystalline layer. The first crystalline layer one of prevents a component of the ferroelectric layer from diffusing into the lower electrode layer and mitigates fatigue of the ferroelectric layer. An upper electrode layer is formed on the ferroelectric layer.
摘要翻译：在形成铁电电容器的方法中，在基板上形成下电极层。在下电极层上形成第一晶体层。在第一晶体层上形成铁电层。第一晶体层防止铁电层的成分扩散到下电极层中，并减轻铁电层的疲劳。在铁电层上形成上电极层。

5. 发明申请

US20080020489A1 METHODS OF FABRICATING FERROELECTRIC DEVICES 有权
标题翻译：制造电磁装置的方法
公开(公告)号：US20080020489A1
公开(公告)日：2008-01-24
申请号：US11778880
申请日：2007-07-17
申请人： Dong Hyun Im , Byoung-Jae Bae , Ik-Soo Kim , Jang-Eun Heo , Choong-Man Lee , Dong-Chul Yoo
发明人： Dong Hyun Im , Byoung-Jae Bae , Ik-Soo Kim , Jang-Eun Heo , Choong-Man Lee , Dong-Chul Yoo
IPC分类号： H01L21/00
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/02318 , H01L21/31691 , H01L28/55
摘要： A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.
摘要翻译：制造铁电体元件的方法包括在反应室中的基板上形成铁电体层。在反应室中提供惰性气体，同时从其中卸载衬底，从而基本上抑制铁电层上的杂质层的形成。

6. 发明申请

US20080048226A1 Direct cell via structures for ferroelectric random access memory devices and methods of fabricating such structures 审中-公开
标题翻译：用于铁电随机存取存储器件的直接电池通孔结构以及制造这种结构的方法
公开(公告)号：US20080048226A1
公开(公告)日：2008-02-28
申请号：US11819602
申请日：2007-06-28
申请人： Jang-Eun Heo , Suk-Hun Choi , Dong-Hyun Im , Dong-Chul Yoo , Ik-Soo Kim
发明人： Jang-Eun Heo , Suk-Hun Choi , Dong-Hyun Im , Dong-Chul Yoo , Ik-Soo Kim
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/57
摘要： Provided are FeRAM device constructions and fabrication methods that provide for the direct connection of metal patterns to ferroelectric capacitors. The FeRAM device constructions utilize a combination of one or more barrier layers incorporated in conductive plugs, barrier layers incorporated in primary conductive patterns or conductive patterns formed using one or more noble metals to suppress parametric drift associated with conventional FeRAM constructions.
摘要翻译：提供了FeRAM器件结构和制造方法，其提供金属图案与铁电电容器的直接连接。 FeRAM器件结构利用结合在导电插塞中的一个或多个阻挡层的组合，并入主导电图案中的阻挡层或使用一种或多种贵金属形成的导电图案以抑制与传统FeRAM结构相关的参数漂移。

7. 发明申请

US20070212797A1 Method of forming a ferroelectric device 审中-公开
标题翻译：形成铁电体器件的方法
公开(公告)号：US20070212797A1
公开(公告)日：2007-09-13
申请号：US11715441
申请日：2007-03-08
申请人： Suk-Hun Choi , Jang-Eun Heo , Yoon-Ho Son , Chang-Ki Hong , Yong-Ju Jung , Hwa-Young Ko , Dong-Hyun Im
发明人： Suk-Hun Choi , Jang-Eun Heo , Yoon-Ho Son , Chang-Ki Hong , Yong-Ju Jung , Hwa-Young Ko , Dong-Hyun Im
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A method of forming a ferroelectric device includes forming a ferroelectric pattern on a substrate, the ferroelectric pattern including a ferroelectric material including titanium and oxygen, forming an insulating layer on the ferroelectric pattern, and planarizing the insulating layer using a slurry until the ferroelectric pattern is exposed, wherein the ferroelectric pattern serves as a polishing stop pattern and the slurry includes ceria.
摘要翻译：形成铁电体元件的方法包括在基板上形成强电介质图案，所述强电介质图案包括包含钛和氧的铁电材料，在铁电图案上形成绝缘层，并且使用浆料平坦化绝缘层，直到铁电图案为暴露，其中铁电图案用作抛光停止图案，并且浆料包括二氧化铈。

8. 发明授权

US07583095B2 High-density probe array 失效
标题翻译：高密度探头阵列
公开(公告)号：US07583095B2
公开(公告)日：2009-09-01
申请号：US11464571
申请日：2006-08-15
申请人： Dong-Chul Yoo , Byoung-Jae Bae , Jang-Eun Heo , Ji-Eun Lim , Dong-Hyun Im
发明人： Dong-Chul Yoo , Byoung-Jae Bae , Jang-Eun Heo , Ji-Eun Lim , Dong-Hyun Im
IPC分类号： G01R31/02
CPC分类号： G01R3/00 , Y10T29/49151
摘要： A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.
摘要翻译：可以通过形成设置在牺牲衬底上的探针，在探针上方形成探针衬底，以及去除牺牲衬底来制造探针阵列。在一个实施例中，第一探针可以在牺牲衬底上在行和列方向上二维地形成。可以在布置在行方向上的第一探针之间形成第二探针，使得第一和第二探针之间的距离小于光刻工艺中的分辨率极限。可以在具有第一和第二探针的牺牲衬底上形成探针衬底，并且可以去除牺牲衬底。

9. 发明授权

US08148710B2 Phase-change memory device using a variable resistance structure 有权
标题翻译：使用可变电阻结构的相变存储器件
公开(公告)号：US08148710B2
公开(公告)日：2012-04-03
申请号：US12805824
申请日：2010-08-20
申请人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
发明人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
IPC分类号： H01L47/00 , H01L29/08 , H01L29/18
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second contact hole is disposed on the semiconductor substrate, exposing the first and second contact regions. A first conductive layer is disposed on the first insulating interlayer to fill the first and the second contact holes. A first protection layer pattern and a lower wiring protection pattern are disposed on the first conductive layer. A first contact with a first electrode and a second contact with a lower wiring are disposed so as to connect the first and second contact regions. A second protection layer with a second electrode is disposed on the first protection layer pattern and the lower wiring protection pattern. A via filled with a phase-change material is disposed between the first electrode and the second electrode.
摘要翻译：一种相变存储器件，包括形成在半导体衬底上的第一接触区域和第二接触区域。具有第一接触孔和第二接触孔的第一绝缘层设置在半导体衬底上，暴露第一和第二接触区域。第一导电层设置在第一绝缘中间层上以填充第一和第二接触孔。第一保护层图案和下布线保护图案设置在第一导电层上。设置与第一电极和与下布线的第二接触件的第一接触，以便连接第一和第二接触区域。具有第二电极的第二保护层设置在第一保护层图案和下布线保护图案上。填充有相变材料的通孔设置在第一电极和第二电极之间。

10. 发明授权

US07982318B2 Device including contact structure and method of forming the same 失效
标题翻译：包括接触结构的装置及其形成方法
公开(公告)号：US07982318B2
公开(公告)日：2011-07-19
申请号：US11655116
申请日：2007-01-19
申请人： Jang-Eun Heo , Young-Moon Choi , Sun-Woo Lee , Hong-Sik Yoon , Kyung-Rae Byun
发明人： Jang-Eun Heo , Young-Moon Choi , Sun-Woo Lee , Hong-Sik Yoon , Kyung-Rae Byun
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/31116 , H01L21/3212 , H01L21/76823 , H01L21/76825 , H01L21/76831 , H01L21/76867 , H01L21/76876 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , H01L2924/00
摘要： A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.
摘要翻译：一种器件包括在具有下导电图案的衬底上的绝缘层，所述绝缘层具有穿透绝缘层并暴露一部分下导电图案的接触孔，催化图案具有第一部分在暴露部分上下导电图案和接触孔的侧壁上的第二部分，在接触孔的侧壁上的间隔件，其中催化剂图案的第二部分设置在间隔件和侧壁之间，接触插塞在接触孔中并使催化剂图案接触，所述接触塞是碳纳米管材料。

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