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1. 发明授权

US07583095B2 High-density probe array 失效
标题翻译：高密度探头阵列
公开(公告)号：US07583095B2
公开(公告)日：2009-09-01
申请号：US11464571
申请日：2006-08-15
申请人： Dong-Chul Yoo , Byoung-Jae Bae , Jang-Eun Heo , Ji-Eun Lim , Dong-Hyun Im
发明人： Dong-Chul Yoo , Byoung-Jae Bae , Jang-Eun Heo , Ji-Eun Lim , Dong-Hyun Im
IPC分类号： G01R31/02
CPC分类号： G01R3/00 , Y10T29/49151
摘要： A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.
摘要翻译：可以通过形成设置在牺牲衬底上的探针，在探针上方形成探针衬底，以及去除牺牲衬底来制造探针阵列。在一个实施例中，第一探针可以在牺牲衬底上在行和列方向上二维地形成。可以在布置在行方向上的第一探针之间形成第二探针，使得第一和第二探针之间的距离小于光刻工艺中的分辨率极限。可以在具有第一和第二探针的牺牲衬底上形成探针衬底，并且可以去除牺牲衬底。

2. 发明申请

US20070058415A1 Method for depositing ferroelectric thin films using a mixed oxidant gas 审中-公开
标题翻译：使用混合氧化剂气体沉积铁电薄膜的方法
公开(公告)号：US20070058415A1
公开(公告)日：2007-03-15
申请号：US11520623
申请日：2006-09-14
申请人： Dong-Hyun Im , Byoung-Jae Bae , Ji-Eun Lim , Dong-Chul Yoo , Yeon-Kyu Jung
发明人： Dong-Hyun Im , Byoung-Jae Bae , Ji-Eun Lim , Dong-Chul Yoo , Yeon-Kyu Jung
IPC分类号： G11C11/22
CPC分类号： H01L28/55 , C23C16/409 , H01L27/11502 , H01L28/65
摘要： Disclosed are methods of forming ferroelectric material layers introducing a plurality of metallorganic source compounds into the reaction chamber, the source compounds being supplied in an appropriate ratio for forming the ferroelectric material. These metallorganic source compounds are, in turn, reacted with a NyOx/O2 oxidant gas mixture in which the NyOxcomponent(s) represents at least 50 volume percent of the oxidant gas. This mixture of metallorganic source compounds and oxidant gas mixture(s) are maintained at a deposition temperature and deposition pressure within the reaction chamber suitable for causing a reaction between the metallorganic source compounds and the oxidant gas for a deposition period sufficient to form the ferroelectric material layer. The resulting ferroelectric material layers exhibit improved uniformity, for example, near the interface with the bottom electrode.
摘要翻译：公开了形成将多个金属有机源化合物引入反应室的铁电材料层的方法，以适当的比例供给源化合物以形成铁电体材料。这些金属有机源化合物又与N 2 O 2 O 2 / O 2 O 2氧化剂气体混合物反应，其中N“ y O x分量代表氧化剂气体的至少50体积％。金属有机源化合物和氧化剂气体混合物的混合物保持在反应室内的沉积温度和沉积压力，适于在金属有机源化合物和氧化剂气体之间产生足以形成铁电材料的沉积时间层。所得到的铁电材料层表现出改善的均匀性，例如在与底部电极的界面附近。

3. 发明申请

US20070045689A1 Ferroelectric Structures Including Multilayer Lower Electrodes and Multilayer Upper Electrodes, and Methods of Manufacturing Same 审中-公开
标题翻译：包括多层下电极和多层上电极的铁电结构及其制造方法相同
公开(公告)号：US20070045689A1
公开(公告)日：2007-03-01
申请号：US11460177
申请日：2006-07-26
申请人： Ji-Eun Lim , Dong-Chul Yoo , Byoung-Jae Bae , Dong-Hyun Im , Suk-Pil Kim
发明人： Ji-Eun Lim , Dong-Chul Yoo , Byoung-Jae Bae , Dong-Hyun Im , Suk-Pil Kim
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： In a ferroelectric structure after a first lower electrode film is formed using a first metal nitride, a second lower electrode film is formed on the first lower electrode film using a first metal, a second metal oxide and/or a first alloy. After a ferroelectric layer is formed on the second lower electrode film, a first upper electrode film is formed on the ferroelectric layer using a second alloy. Related devices are also disclosed.
摘要翻译：在使用第一金属氮化物形成第一下部电极膜之后的铁电体结构中，使用第一金属，第二金属氧化物和/或第一合金，在第一下部电极膜上形成第二下部电极膜。在第二下电极膜上形成铁电体层之后，使用第二合金在铁电层上形成第一上电极膜。还公开了相关设备。

4. 发明申请

US20060214204A1 Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same 审中-公开
标题翻译：铁电结构和器件包括不同金属的上/下电极及其形成方法
公开(公告)号：US20060214204A1
公开(公告)日：2006-09-28
申请号：US11270730
申请日：2005-11-09
申请人： Dong-Chul Yoo , Byoung Bae , Ji-Eun Lim , Dong-Hyun Im , Myung-Gon Kim
发明人： Dong-Chul Yoo , Byoung Bae , Ji-Eun Lim , Dong-Hyun Im , Myung-Gon Kim
IPC分类号： H01L29/94 , H01L29/76
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A ferroelectric capacitor structure can include a ferroelectric layer on a lower electrode and an upper electrode on the ferroelectric layer, the upper electrode including a metal oxide and a metal.
摘要翻译：铁电电容器结构可以包括在下电极上的铁电层和铁电层上的上电极，上电极包括金属氧化物和金属。

5. 发明申请

US20080054244A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：相变存储器件及其形成方法
公开(公告)号：US20080054244A1
公开(公告)日：2008-03-06
申请号：US11697230
申请日：2007-04-05
申请人： Jin-Il Lee , Ji-Eun Lim , Hye-Young Park , Sung-Lae Cho , Eun-Ae Chung , Ki-Vin Im , Byoung-Jae Bae , Young-Lim Park
发明人： Jin-Il Lee , Ji-Eun Lim , Hye-Young Park , Sung-Lae Cho , Eun-Ae Chung , Ki-Vin Im , Byoung-Jae Bae , Young-Lim Park
IPC分类号： H01L29/02
CPC分类号： H01L45/1616 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1683
摘要： In one embodiment, a phase change memory device includes an insulation structure over a substrate. The insulation structure ahs an opening defined therethrough. A first layer pattern is formed on sidewalls and a bottom of the opening. A second layer pattern is formed on the first layer pattern and substantially fills the opening.
摘要翻译：在一个实施例中，相变存储器件包括在衬底上的绝缘结构。绝缘结构是通过其限定的开口。第一层图案形成在开口的侧壁和底部上。在第一层图案上形成第二层图案并且基本上填充开口。

6. 发明申请

US20060011298A1 Showerhead with branched gas receiving channel and apparatus including the same for use in manufacturing semiconductor substrates 审中-公开
标题翻译：具有分支气体接收通道的喷头及其制造方法，用于制造半导体基板
公开(公告)号：US20060011298A1
公开(公告)日：2006-01-19
申请号：US11177890
申请日：2005-07-08
申请人： Ji-Eun Lim , Byoung-Jae Bae , Young-Bae Choi
发明人： Ji-Eun Lim , Byoung-Jae Bae , Young-Bae Choi
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45514 , C23C16/45565 , C23C16/45574
摘要： Showerheads for use in an apparatus for manufacturing a semiconductor substrate include an injection plate defining a bottom face of a gas receiving space in the showerhead and a gas receiving channel extending within the injection plate. A plurality of exhausting holes in the injection plate are coupled to the gas receiving channel. The exhausting holes are configured to exhaust gas from the gas receiving channel to the bottom face of the gas receiving space. A plurality of channels extend through the injection plate from the bottom face of the gas receiving space configured to flow gas from the bottom face of the gas receiving space out of the space.
摘要翻译：用于制造半导体衬底的装置的喷头包括限定喷淋头中的气体接收空间的底面的注射板和在注射板内延伸的气体接收通道。喷射板中的多个排气孔联接到气体接收通道。排气孔被构造成将气体从气体接收通道排出到气体接收空间的底面。多个通道从气体容纳空间的底面延伸穿过注射板，该气体接收空间配置成使气体从气体接收空间的底面流出空间。

7. 发明授权

US07759667B2 Phase change memory device including resistant material 失效
标题翻译：相变记忆装置，包括耐磨材料
公开(公告)号：US07759667B2
公开(公告)日：2010-07-20
申请号：US11762801
申请日：2007-06-14
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-il Lee , Hye-Young Park , Ji-Eun Lim
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-il Lee , Hye-Young Park , Ji-Eun Lim
IPC分类号： H01L29/04
CPC分类号： H01L45/148 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/124 , H01L45/144 , H01L45/1691
摘要： A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.
摘要翻译：相变存储器件包括设置在基板上的下电极，包括暴露下电极的接触孔并覆盖基板的层间绝缘层，填充接触孔的电阻材料图案，插入在电阻材料之间的相变图案图案和层间绝缘层，并且在电阻材料图案和下电极之间延伸，其中电阻材料图案具有比相变图案更高的电阻，以及与相变图案接触的上电极，上电极为通过相变图案电连接到下电极。

8. 发明申请

US20060174827A1 Apparatus for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件制造装置
公开(公告)号：US20060174827A1
公开(公告)日：2006-08-10
申请号：US11329451
申请日：2006-01-10
申请人： Byoung-Jae Bae , Ji-Eun Lim , Yeon-Kyu Jung
发明人： Byoung-Jae Bae , Ji-Eun Lim , Yeon-Kyu Jung
IPC分类号： C30B11/00
CPC分类号： C23C16/45589 , C23C16/45563 , C23C16/45565 , C23C16/45591 , C30B35/00 , Y10T117/10
摘要： A deposition apparatus is provided that has a reaction-chamber, a wafer support, gas supply line, an ejection unit and a diffusion unit. The ejection unit includes a bottom portion spaced apart from a top wall of the reaction chamber to form a space. The diffusion unit is positioned below the gas supply line and includes a planar portion having upwardly extending flanges forming an upwardly open space below the gas supply line. Gas flowing from the gas supply line flows into the upwardly open space and ascends the upwardly extending flanges to diffuse the gas into the space.
摘要翻译：提供一种沉积设备，其具有反应室，晶片支撑件，气体供应管线，喷射单元和扩散单元。喷射单元包括与反应室的顶壁间隔开的底部，以形成空间。扩散单元位于气体供应管线的下方并且包括具有向上延伸的凸缘的平面部分，其在气体供应管线下方形成向上开放的空间。从气体供应管线流出的气体流入向上开放的空间并向上延伸的凸缘上升，以将气体扩散到空间中。

9. 发明授权

US07727884B2 Methods of forming a semiconductor device including a phase change material layer 有权
标题翻译：形成包括相变材料层的半导体器件的方法
公开(公告)号：US07727884B2
公开(公告)日：2010-06-01
申请号：US11779885
申请日：2007-07-19
申请人： Byoung-Jae Bae , Sung-Lae Cho , Jin-Il Lee , Hye-Young Park , Ji-Eun Lim , Young-Lim Park
发明人： Byoung-Jae Bae , Sung-Lae Cho , Jin-Il Lee , Hye-Young Park , Ji-Eun Lim , Young-Lim Park
IPC分类号： H01L21/4763
CPC分类号： C23C16/30 , C23C16/305 , C23C16/45531 , C23C16/45553 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups “—N═C═O”, “—N═C═S”, “—N═C═Se”, “—N═C═Te”, “—N═C═Po” and “—C≡N”.
摘要翻译：一种方法包括使用采用处理气体的沉积工艺在衬底上形成相变材料层。工艺气体包括锗源气体，锗源气体包括至少一个原子团“-N = C = O”，“-N = C = S”，“-N =C≡Se”，“ -N =C≡Te“，”-N =C≡Po“和”-C≡N“。

10. 发明申请

US20050155551A1 Deposition apparatus and related methods including a pulse fluid supplier having a buffer 审中-公开
标题翻译：沉积装置及相关方法，包括具有缓冲器的脉冲流体供应器
公开(公告)号：US20050155551A1
公开(公告)日：2005-07-21
申请号：US10952323
申请日：2004-09-28
申请人： Byoung-Jae Bae , Young-Bae Choi , Ji-Eun Lim
发明人： Byoung-Jae Bae , Young-Bae Choi , Ji-Eun Lim
IPC分类号： C23C16/455 , C23C16/448 , C23C16/00
CPC分类号： C23C16/4481
摘要： A deposition apparatus for depositing a predetermined material on a semiconductor substrate includes a chamber configured to perform a deposition process and a source gas supplier having a pulse fluid supplier configured to cyclically supply a source of a source gas to the chamber. The pulse fluid supplier includes a buffer configured to provide a space in which a fluid is received and a body including a first supply port connected to a source supplier, a second supply port connected to a carrier gas supply pipe, and a discharge port connected to a fluid supply pipe. The fluid supply pipe is configured such that fluid in the buffer flows through the fluid supply pipe to the chamber. The pulse fluid supplier includes a controller configured to selectively allow or prevent a source fluid supplied by the first supply port and a carrier gas supplied by the second supply port to flow to/from the buffer, and to allow or prevent a fluid in the buffer to flow to/from the fluid supply pipe.
摘要翻译：用于在半导体衬底上沉积预定材料的沉积装置包括构造成执行沉积工艺的腔室和具有脉冲流体供应器的源气体供应器，所述脉冲流体供应器构造成将源气体源循环地供应到腔室。脉冲流体供给器包括缓冲器，该缓冲器被构造成提供容纳流体的空间和包括连接到源供应器的第一供应端口的主体，连接到载气供应管的第二供应端口和连接到流体供应管。流体供给管构造成使得缓冲液中的流体流过流体供应管至腔室。脉冲流体供应器包括：控制器，其被配置为选择性地允许或防止由第一供应口供应的源流体和由第二供应口提供的载气流向缓冲器或从缓冲器流出，并允许或防止缓冲器中的流体流向/从流体供应管流出。

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