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1. 发明申请

US20120326121A1 VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：蒸气沉积系统，制造发光装置和发光装置的方法
公开(公告)号：US20120326121A1
公开(公告)日：2012-12-27
申请号：US13603192
申请日：2012-09-04
申请人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/04
CPC分类号： C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
摘要翻译：提供了蒸镀系统，制造发光器件的方法和发光器件。根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

2. 发明授权

US08685772B2 Method of manufacturing light emitting diode and light emitting diode manufactured thereby 有权
标题翻译：由此制造发光二极管和发光二极管的方法
公开(公告)号：US08685772B2
公开(公告)日：2014-04-01
申请号：US13344298
申请日：2012-01-05
申请人： Dong Ju Lee , Heon Ho Lee , Hyun Wook Shim , Young Sun Kim
发明人： Dong Ju Lee , Heon Ho Lee , Hyun Wook Shim , Young Sun Kim
IPC分类号： H01L33/02
CPC分类号： H01L33/0075 , H01L33/007 , H01L33/32
摘要： There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.
摘要翻译：提供了一种制造发光二极管的方法和由其制造的发光二极管。该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

3. 发明申请

US20110198667A1 VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：蒸气沉积系统，制造发光装置和发光装置的方法
公开(公告)号：US20110198667A1
公开(公告)日：2011-08-18
申请号：US12940399
申请日：2010-11-05
申请人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
发明人： Dong Ju LEE , Hyun Wook Shim , Heon Ho Lee , Young Sun Kim , Sung Tae Kim
IPC分类号： H01L33/30 , H01L33/00 , H01L33/02
CPC分类号： C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
摘要翻译：提供了蒸镀系统，制造发光器件的方法和发光器件。根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

4. 发明申请

US20130009192A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20130009192A1
公开(公告)日：2013-01-10
申请号：US13368043
申请日：2012-02-07
申请人： Hyun Wook Shim , Dong Ju Lee , Dong Ik Shin , Young Sun Kim , Makoto Asai , Yu Ri Sohn
发明人： Hyun Wook Shim , Dong Ju Lee , Dong Ik Shin , Young Sun Kim , Makoto Asai , Yu Ri Sohn
IPC分类号： H01L33/30
CPC分类号： H01L33/025 , H01L29/452 , H01L33/32 , H01L33/40
摘要： Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.
摘要翻译：提供了包括p型氮化物半导体层，n型氮化物半导体层和在它们之间形成的有源层的氮化物半导体发光器件。接触层位于p型氮化物半导体层和p侧电极之间。接触层包括具有第一杂质浓度以与p侧电极欧姆接触的第一p型氮化物层和具有第二杂质浓度的第二p型氮化物层，第二杂质浓度的浓度低于第一杂质浓度。

5. 发明申请

US20140103359A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140103359A1
公开(公告)日：2014-04-17
申请号：US14125878
申请日：2011-07-28
申请人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
发明人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/025 , H01L33/20 , H01L33/24
摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.
摘要翻译：提供了一种具有增强的发光效率的半导体发光器件及其制造方法。半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

6. 发明授权

US07462876B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07462876B2
公开(公告)日：2008-12-09
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

7. 发明申请

US20070145406A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070145406A1
公开(公告)日：2007-06-28
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

8. 发明申请

US20120009697A1 CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME 有权
标题翻译：化学蒸气沉积装置及其形成使用其的半导体外延薄膜的方法
公开(公告)号：US20120009697A1
公开(公告)日：2012-01-12
申请号：US13173423
申请日：2011-06-30
申请人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
发明人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
IPC分类号： H01L33/48 , C23C16/458 , C23C16/44
CPC分类号： H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
摘要翻译：化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构。

9. 发明授权

US08895356B2 Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same 有权
标题翻译：化学气相沉积装置及使用其形成半导体外延薄膜的方法
公开(公告)号：US08895356B2
公开(公告)日：2014-11-25
申请号：US13173423
申请日：2011-06-30
申请人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
发明人： Jong Sun Maeng , Young Sun Kim , Hyun Wook Shim , Sung Tae Kim
IPC分类号： H01L21/00 , H01L21/16 , C23C16/455 , C23C16/458
CPC分类号： H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.
摘要翻译：化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构。

10. 发明授权

US07301173B2 Group III-nitride light emitting device 有权
标题翻译： III族氮化物发光器件
公开(公告)号：US07301173B2
公开(公告)日：2007-11-27
申请号：US11313967
申请日：2005-12-22
申请人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
发明人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/32 , H01S5/22 , H01S5/305 , H01S5/3213 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
摘要翻译：本发明提供了改善工作电压和静电放电特性的III族氮化物发光器件。 III族氮化物发光器件包括在衬底上依次形成的下n型覆盖层，电流扩展层，上n型覆盖层，有源层和p型覆盖层。电流扩展层包括SiC层。

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