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1. 发明授权

US06482566B1 Hydroxycarborane photoresists and process for using same in bilayer thin film imaging lithography 有权
标题翻译：羟基碳硼烷光刻胶及其在双层薄膜成像光刻中的应用方法
公开(公告)号：US06482566B1
公开(公告)日：2002-11-19
申请号：US09507522
申请日：2000-02-18
申请人： Donald C. Hofer , Scott A. MacDonald , Arpan P. Mahorowala , Robert D. Miller , Josef Michl , Gregory M. Wallraff
发明人： Donald C. Hofer , Scott A. MacDonald , Arpan P. Mahorowala , Robert D. Miller , Josef Michl , Gregory M. Wallraff
IPC分类号： G03C173
CPC分类号： G03F7/0392 , G03F7/0042 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： A photoresist composition which includes hydroxycarborane either incorporated as a monomeric dissolution modifier or as pendent groups on a polymer backbone. The photoresist composition is particularly useful in a bilayer thin film imaging lithographic process in which ultraviolet radiation-imaging in a wavelength range of between about 365 nm and about 13 nm is employed.
摘要翻译：一种光致抗蚀剂组合物，其包括作为单体溶解改性剂掺入或作为聚合物主链上的悬挂基团引入的羟基碳硼烷。光致抗蚀剂组合物在双层薄膜成像光刻工艺中特别有用，其中采用波长范围在约365nm至约13nm之间的紫外线辐射成像。

2. 发明授权

US5250395A Process for imaging of photoresist including treatment of the photoresist with an organometallic compound 失效
标题翻译：用于光刻胶成像的方法，包括用有机金属化合物处理光致抗蚀剂
公开(公告)号：US5250395A
公开(公告)日：1993-10-05
申请号：US735420
申请日：1991-07-25
申请人： Robert D. Allen , Scott A. MacDonald , Dennis R. McKean , Hubert Schlosser , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
发明人： Robert D. Allen , Scott A. MacDonald , Dennis R. McKean , Hubert Schlosser , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
IPC分类号： G03F7/039 , G03F7/09 , G03F7/26 , G03C5/16 , G03C1/72
CPC分类号： G03F7/039 , G03F7/091 , G03F7/265
摘要： The present invention relates to a process for negative tone imaging of photoresist to improve resolution of lithographic patterns.
摘要翻译：本发明涉及光刻胶的负色调成像方法，以提高光刻图案的分辨率。

3. 发明授权

US07875408B2 Bleachable materials for lithography 有权
标题翻译：用于光刻的可漂洗材料
公开(公告)号：US07875408B2
公开(公告)日：2011-01-25
申请号：US11698182
申请日：2007-01-25
申请人： John A. Hoffnagle , David R. Medeiros , Robert D. Miller , Libor Vycklicky , Gregory M. Wallraff
发明人： John A. Hoffnagle , David R. Medeiros , Robert D. Miller , Libor Vycklicky , Gregory M. Wallraff
IPC分类号： G03F7/00 , G03F7/004 , G03F7/031 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/146
摘要： Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.
摘要翻译：包含可光漂白有机材料的组合物可以用193nm的光漂白，并且在曝光后通过刺激使其恢复到其初始状态。（可逆光漂白）。我们将这些组合物用于本领域已知的对比增强层和作为光致抗蚀剂的一部分，特别是在用于半导体制造的光刻工艺中。它们可以包括聚合物，例如有机硅聚合物，包含芳族羟基化合物如苯酚和萘酚的聚合物的聚合物，例如苯酚甲醛聚合物和萘酚甲醛聚合物苯乙烯聚合物和酚醛丙烯酸酯聚合物或环状材料，其包括：其中基团“R”和 “Y”表示有机或取代的有机部分，结构I，II和III表示碱性有机骨架，并且可以在任何可用位置被未取代或被任何一个或多个取代基的组合取代。

4. 发明授权

US5204226A Photosensitizers for polysilanes 失效
标题翻译：多晶硅光敏剂
公开(公告)号：US5204226A
公开(公告)日：1993-04-20
申请号：US664260
申请日：1991-03-04
申请人： Mark E. Baier , Robert D. Miller , Gregory M. Wallraff
发明人： Mark E. Baier , Robert D. Miller , Gregory M. Wallraff
IPC分类号： G03F7/004 , G03F7/039 , G03F7/075 , G03F7/26 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0754
摘要： The present invention relates to positive resist compositions comprising polysilanes and sulfosuccinimide photosensitizers and the use of these compositions in making integrated circuits.

5. 发明申请

US20080182178A1 Bleachable materials for lithography 有权
标题翻译：用于光刻的可漂洗材料
公开(公告)号：US20080182178A1
公开(公告)日：2008-07-31
申请号：US11698182
申请日：2007-01-25
申请人： John A. Hoffnagle , David R. Medeiros , Robert D. Miller , Libor Vycklicky , Gregory M. Wallraff
发明人： John A. Hoffnagle , David R. Medeiros , Robert D. Miller , Libor Vycklicky , Gregory M. Wallraff
IPC分类号： G03C1/00 , G03F1/00
CPC分类号： G03F7/091 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/146
摘要： Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organosilicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.
摘要翻译：包含可光漂白有机材料的组合物可以用193nm的光漂白，并且在曝光后通过刺激使其恢复到其初始状态。（可逆光漂白）。我们将这些组合物用于本领域已知的对比增强层和作为光致抗蚀剂的一部分，特别是在用于半导体制造的光刻工艺中。它们可以包括聚合物，例如有机硅聚合物，包含芳族羟基化合物如苯酚和萘酚的聚合物的聚合物，例如苯酚甲醛聚合物和萘酚甲醛聚合物苯乙烯聚合物和酚醛丙烯酸酯聚合物或环状材料，其包含：其中基团“R”和“Y “表示有机或取代的有机部分，结构I，II和III表示碱性有机骨架，并且可以在任何可用的位置被未取代或被任意一个或多个取代基的组合取代。

6. 发明授权

US5045431A Dry film, aqueous processable photoresist compositions 失效
标题翻译：干膜，水性可加工光致抗蚀剂组合物
公开(公告)号：US5045431A
公开(公告)日：1991-09-03
申请号：US656103
申请日：1991-02-13
申请人： Robert D. Allen , Gregory M. Wallraff , Logan L. Simpson , William D. Hinsberg, III
发明人： Robert D. Allen , Gregory M. Wallraff , Logan L. Simpson , William D. Hinsberg, III
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , Y10S430/111
摘要： A new polymer family is shown for use in high speed photoresists. A dry film photoresist includes a polymer binder prepared from t-butyl methacrylate/methylmethacrylate/acrylic acid/ethyl acrylate and a suitable initiator.
摘要翻译：新的聚合物系列被用于高速光刻胶。干膜光致抗蚀剂包括由甲基丙烯酸叔丁酯/甲基丙烯酸甲酯/丙烯酸/丙烯酸乙酯和合适的引发剂制备的聚合物粘合剂。

7. 发明授权

US5071730A Liquid apply, aqueous processable photoresist compositions 失效
标题翻译：液体涂布，水性可加工光致抗蚀剂组合物
公开(公告)号：US5071730A
公开(公告)日：1991-12-10
申请号：US656105
申请日：1991-02-13
申请人： Robert D. Allen , William D. Hinsberg, III , Logan L. Simpson , Gregory M. Wallraff
发明人： Robert D. Allen , William D. Hinsberg, III , Logan L. Simpson , Gregory M. Wallraff
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , Y10S430/111
摘要： A new polymer family is shown for use in high sensitivity, high resolution photoresists. A liquid apply resist includes a polymer binder of t-butyl methacrylate/methylmethacrylate/methacrylic acid and an initiator which generates acid upon exposure to radiation.
摘要翻译：新的聚合物系列显示用于高灵敏度，高分辨率的光致抗蚀剂。液体涂覆抗蚀剂包括甲基丙烯酸叔丁酯/甲基丙烯酸甲酯/甲基丙烯酸的聚合物粘合剂和在暴露于辐射时产生酸的引发剂。

8. 发明授权

US5055439A Photoacid generating composition and sensitizer therefor 失效
标题翻译：光致发光组合物及其敏化剂
公开(公告)号：US5055439A
公开(公告)日：1991-10-08
申请号：US458048
申请日：1989-12-27
申请人： Robert D. Allen , William D. Hinsberg, III. , Logan L. Simpson , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
发明人： Robert D. Allen , William D. Hinsberg, III. , Logan L. Simpson , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
IPC分类号： C08F8/00 , C08G59/00 , C08G59/18 , C08G59/68 , G03C1/675 , G03F7/004 , G03F7/031 , G03F7/039 , H01L21/027
CPC分类号： G03F7/031
摘要： A composition including an initiator which generates acid upon exposure to radiation in the presence of a sensitizer. The composition may be mixed with an acid sensitive polymer or prepolymer to make a visible light or laser imageable photoresist. The sensitizer has phenylethynyl and methoxy substituents which, when properly positioned, allow it to utilize all of the visible argon ion laser lines.

9. 发明授权

US08614047B2 Photodecomposable bases and photoresist compositions 有权
标题翻译：光可分解碱和光致抗蚀剂组合物
公开(公告)号：US08614047B2
公开(公告)日：2013-12-24
申请号：US13219599
申请日：2011-08-26
申请人： Ramakrishnan Ayothi , William D. Hinsberg , Sally A. Swanson , Gregory M. Wallraff
发明人： Ramakrishnan Ayothi , William D. Hinsberg , Sally A. Swanson , Gregory M. Wallraff
IPC分类号： C07C55/02 , G03F7/004 , G03F7/26
CPC分类号： C07C55/08 , C07C55/12 , C07C55/14 , C07C55/32 , C07C59/21 , C07C59/245 , C07C59/295 , C07C59/315 , C07C59/347 , C07C229/24 , C07D241/04 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.
摘要翻译：提供了具有显示增加的成像性能的具有二羧酸阴离子基团的新颖的对称和不对称双功能可光分解碱（PDB）。还提供了使用双功能二羧酸化PDB制备的光致抗蚀剂组合物和使用本发明的光致抗蚀剂组合物的光刻方法。

10. 发明授权

US07951524B2 Self-topcoating photoresist for photolithography 有权
标题翻译：用于光刻的自表面光刻胶
公开(公告)号：US07951524B2
公开(公告)日：2011-05-31
申请号：US12023108
申请日：2008-01-31
申请人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
发明人： Robert Allen , Phillip Brock , Shiro Kusumoto , Yukio Nishimura , Daniel P. Sanders , Mark Steven Slezak , Ratnam Sooriyakumaran , Linda K. Sundberg , Hoa Trung , Gregory M. Wallraff
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/2041 , C08F220/22 , G03F7/0046 , G03F7/0397 , G03F7/11 , Y10S430/108 , Y10S430/111
摘要： Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
摘要翻译：光刻胶添加剂聚合物和光致抗蚀剂制剂，可用于浸没式光刻，而不使用额外的面漆。抗蚀剂组合物包括光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和光致抗蚀剂添加剂聚合物。还有一种使用包括光致抗蚀剂添加剂聚合物的光致抗蚀剂制剂的方法。

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