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1. 发明授权

US06915566B2 Method of fabricating flexible circuits for integrated circuit interconnections 有权
标题翻译：制造用于集成电路互连的柔性电路的方法
公开(公告)号：US06915566B2
公开(公告)日：2005-07-12
申请号：US09514762
申请日：2000-02-28
申请人： Donald C. Abbott , John E. Cotugno , Robert M. Fritzsche , Robert A. Sabo , Christopher M. Sullivan , David W. West
发明人： Donald C. Abbott , John E. Cotugno , Robert M. Fritzsche , Robert A. Sabo , Christopher M. Sullivan , David W. West
IPC分类号： H01L21/60 , H01L23/498 , H05K1/00 , H05K3/00 , H05K3/06 , H05K3/10 , H05K3/20 , H05K3/40 , H01K3/10
CPC分类号： H01L23/4985 , H01L24/48 , H01L24/73 , H01L2224/16 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00015 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H05K1/0393 , H05K3/005 , H05K3/064 , H05K3/102 , H05K3/20 , H05K3/205 , H05K3/207 , H05K3/4038 , H05K2201/09563 , H05K2201/09981 , H05K2203/0108 , H05K2203/0195 , H05K2203/033 , H05K2203/0338 , H05K2203/0369 , H05K2203/0522 , H05K2203/1189 , Y10T29/49117 , Y10T29/49126 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165 , Y10T29/49167 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method for the fabrication of a double-sided electrical interconnection flexible circuit (200) particularly useful as a substrate for an area array integrated circuit package. A copper matrix with studs (203) is pressed through a dielectric film (201) having a copper layer on the opposite surface, thereby forming an intermediate structure for a flex circuit with self-aligned solid copper vias in a one step process. The contacts are reinforced by plating both surfaces with a layer of copper, and conventional processes are used to complete the circuit patterning.
摘要翻译：一种用于制造特别可用作面阵列集成电路封装的衬底的双面电互连柔性电路（200）的方法。具有螺柱（203）的铜基体通过在相对表面上具有铜层的电介质膜（201）被挤压，从而在一步法中形成具有自对准固体铜通孔的柔性电路的中间结构。通过用铜层镀覆两个表面来增强触点，并且使用常规工艺来完成电路图案化。

2. 发明授权

US06724070B2 Fine pitch lead frame 有权
标题翻译：细间距引线框架
公开(公告)号：US06724070B2
公开(公告)日：2004-04-20
申请号：US10170033
申请日：2002-06-12
申请人： Robert M. Fritzsche , Donald C. Abbott
发明人： Robert M. Fritzsche , Donald C. Abbott
IPC分类号： H01L2350
CPC分类号： H01L23/49548 , H01L21/4828 , H01L2924/0002 , H01L2924/00
摘要： A lead frame including a first set of leads in a first plane and a second set of leads in a second plane offset vertically from the second plane. The leads in the first and second planes are offset from each other by a lead width.
摘要翻译：引线框架包括在第一平面中的第一组引线和在与第二平面垂直偏移的第二平面中的第二组引线。第一和第二平面中的引线彼此偏移引线宽度。

3. 发明授权

US5710456A Silver spot/palladium plate lead frame finish 失效
公开(公告)号：US5710456A
公开(公告)日：1998-01-20
申请号：US483664
申请日：1995-06-07
申请人： Donald C. Abbott , Robert M. Fritzsche
发明人： Donald C. Abbott , Robert M. Fritzsche
IPC分类号： C23C28/02 , H01L23/495
CPC分类号： C23C28/023 , H01L23/49582 , H01L2224/45144 , H01L2224/48247 , H01L2224/48639 , H01L2224/48664 , H01L2224/85439 , H01L2224/85464 , H01L24/45 , H01L24/48 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/14
摘要： A lead frame is plated with palladium and then selected portions of the lead frame leads are spot plated with silver to improve solderability.

4. 发明授权

US06429050B1 Fine pitch lead frame and method 有权
标题翻译：细间距引线框架和方法
公开(公告)号：US06429050B1
公开(公告)日：2002-08-06
申请号：US09212013
申请日：1998-12-15
申请人： Robert M. Fritzsche , Donald C. Abbott
发明人： Robert M. Fritzsche , Donald C. Abbott
IPC分类号： H01L2144
CPC分类号： H01L23/49548 , H01L21/4828 , H01L2924/0002 , H01L2924/00
摘要： The invention is a lead frame that has leads formed in two levels during the etching process in which the lead frame is formed. A lead frame form (40), or continuous strip of lead frame material, is coated on two sides with a photo resist material (41,43). Each photo resist coated side is patterned to define leads on the lead frame. The lead patterns (41,43, 42,44) on the two sides are offset from each other so that patterns on one side of the lead frame material alternate with the patterns on the other side of the lead frame material. Both sides of the photo resist patterned lead frame material are etched to a depth exceeding the thickness of a lead. The photo resist (41,43) material is then removed. The resulting lead frame has leads (50-56)that are in two levels, each level having leads offset by a lead width from the other level, but with an effective zero distance between leads horizontally.
摘要翻译：本发明是在其中形成引线框架的蚀刻工艺期间具有形成在两个层中的引线的引线框架。引线框架形式（40）或连续的引线框架材料带用光刻胶材料（41,43）涂覆在两面上。每个光致抗蚀剂涂层侧被图案化以在引线框架上限定引线。两侧的引线图案（41,43,42,44）彼此偏移，使得引线框架材料的一侧上的图案与引线框架材料的另一侧上的图案交替。光刻抗蚀图案引线框架材料的两面被蚀刻到超过铅厚度的深度。然后除去光致抗蚀剂（41,43）材料。所得到的引线框架具有两个级别的引线（50-56），每个级别具有由另一级别的引线宽度偏移的引线，但是引线之间的有效零距离水平。

5. 发明授权

US5561320A Silver spot/palladium plate lead frame finish 失效
标题翻译：银色/钯板引线框架
公开(公告)号：US5561320A
公开(公告)日：1996-10-01
申请号：US329024
申请日：1994-10-25
申请人： Donald C. Abbott , Robert M. Fritzsche
发明人： Donald C. Abbott , Robert M. Fritzsche
IPC分类号： C23C28/02 , H01L23/495 , H01L23/48 , H01L23/50
CPC分类号： C23C28/023 , H01L23/49582 , H01L2224/45144 , H01L2224/48247 , H01L2224/48639 , H01L2224/48664 , H01L2224/85439 , H01L2224/85464 , H01L24/45 , H01L24/48 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/14
摘要： A lead frame is plated with palladium and then selected portions of the lead frame leads are spot plated with silver to improve solderability.
摘要翻译：引线框架镀钯，然后引线框引线的选定部分点镀银以提高可焊性。

6. 发明授权

US5384155A Silver spot/palladium plate lead frame finish 失效
标题翻译：银色/钯板引线框架
公开(公告)号：US5384155A
公开(公告)日：1995-01-24
申请号：US893911
申请日：1992-06-04
申请人： Donald C. Abbott , Robert M. Fritzsche
发明人： Donald C. Abbott , Robert M. Fritzsche
IPC分类号： C23C28/02 , H01L23/495 , C23C26/00
CPC分类号： C23C28/023 , H01L23/49582 , H01L2224/45144 , H01L2224/48247 , H01L2224/48639 , H01L2224/48664 , H01L2224/85439 , H01L2224/85464 , H01L24/45 , H01L24/48 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/14
摘要： The invention is to a method of spot plating parts of a plated semiconductor lead frame. The entire lead frame is first plated. Then parts of the lead frame, internal to the subsequent encapsulating package, are spot plated prior to encapsulating the semiconductor device. A spot of silver is plated in the mount and/or bond area of the lead frame.
摘要翻译：本发明是一种电镀半导体引线框架的电镀部件的方法。首先将整个引线框电镀。然后，在封装半导体器件之前，将引线框架的后续封装封装内部的部分点电镀。银的点被镀在引线框架的安装和/或粘合区域中。

7. 发明授权

US06635407B1 Two pass process for producing a fine pitch lead frame by etching 有权
标题翻译：用于通过蚀刻制造细间距引线框架的两通过程
公开(公告)号：US06635407B1
公开(公告)日：2003-10-21
申请号：US09178848
申请日：1998-10-26
申请人： Gijsbert W. Lokhorst , Robert M. Fritzsche , Ronald B. Wheelock
发明人： Gijsbert W. Lokhorst , Robert M. Fritzsche , Ronald B. Wheelock
IPC分类号： G03C500
CPC分类号： H01L23/49548 , H01L21/4828 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a lead frame. The method includes providing an electrically conductive layer having a pair of opposing major surfaces. A pattern is etched in the layer extending partially through the layer to form cavities with sidewalls in the layer. A patterned mask is provided on the etched layer including masking of the sidewalls. The layer is again etched within the cavities. The patterned mask is preferably a liquid photo resist and the electrically conductive layer is preferably one of a copper or copper-based material or ALLOY 42. The etch can take place from both major surfaces.
摘要翻译：一种制造引线框架的方法。该方法包括提供具有一对相对的主表面的导电层。在层中部分延伸的层中蚀刻图案，以在该层中形成具有侧壁的空腔。在蚀刻层上设置图案掩模，包括侧壁的掩蔽。该层再次在空腔内蚀刻。图案化掩模优选为液体光致抗蚀剂，并且导电层优选为铜或铜基材料或合金42之一。蚀刻可以从两个主表面进行。

8. 发明授权

US06413437B1 Fine featured photo-resist artwork design for chemical milling 有权
标题翻译：精美的抗光蚀图案设计用于化学铣削
公开(公告)号：US06413437B1
公开(公告)日：2002-07-02
申请号：US09325319
申请日：1999-06-03
申请人： Robert M. Fritzsche
发明人： Robert M. Fritzsche
IPC分类号： B44C122
CPC分类号： H01L21/4828 , B44C1/227
摘要： The invention is a method of forming the art work for chemically etching that produces uniform through-etch and lateral-etch. The artwork that defines the pattern to be etched utilizes lines equal to the narrowest feature that is to be etched. Rather than etch away large areas, section are removed by etching by cutting them out of the material that is being etched. The artwork or pattern is designed with the same compensation factors throughout the entire pattern and the etch rate will be completely uniform for the entire pattern.
摘要翻译：本发明是形成用于化学蚀刻的技术工作的方法，其产生均匀的通过蚀刻和横向蚀刻。定义待蚀刻图案的艺术品使用等于要蚀刻的最窄特征的线。而不是蚀刻掉大面积的区域，通过将其切割出被蚀刻的材料，通过蚀刻来去除截面。在整个图案中，图案或图案被设计成具有相同的补偿因子，并且蚀刻速率对于整个图案将是完全均匀的。

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