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1. 发明申请

US20070008865A1 High density data storage devices with polarity-dependent memory switching media 审中-公开
标题翻译：具有极性相关的存储器交换介质的高密度数据存储设备
公开(公告)号：US20070008865A1
公开(公告)日：2007-01-11
申请号：US11177642
申请日：2005-07-08
申请人： Donald Adams , Zhaohui Fan , Yevgeny Anoikin
发明人： Donald Adams , Zhaohui Fan , Yevgeny Anoikin
IPC分类号： G11B9/00
CPC分类号： G11B9/149 , G11B9/04
摘要： Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate, a conductive under-layer disposed over the substrate, and a polarity dependent memory switching media disposed over the under-layer. In an embodiment, the polarity dependent memory switching media is continuous and the media either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a forward voltage is applied to the tip, causing the polarity dependent memory switching media to form an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.” In an alternative embodiment, an insulating material can be disposed over the substrate such that a plurality of cells is formed, at least one of the cells including the polarity dependent memory switching media. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the at least one cell and a forward voltage is applied to the tip, the polarity dependent memory switching media within the at least one cell forms an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.”
摘要翻译：根据本发明的系统可以包括可与介质接触的尖端，所述介质包括衬底，设置在衬底上的导电底层以及设置在底层上方的极性依赖存储器切换介质。在一个实施例中，极性相关的存储器切换介质是连续的，并且介质与电压源接地或电连接，使得当尖端与介质接触并且正向电压被施加到尖端时，导致极性依赖存储器切换介质以形成桥接尖端和底层的Ag树枝状结构。桥接导致对应于“1”或“0”的电阻降低。在替代实施例中，绝缘材料可以设置在衬底上，使得形成多个单元，至少一个单元包括极性依赖存储器切换介质。介质与电压源接地或电连接，使得当尖端与至少一个单元接触并且向尖端施加正向电压时，至少一个单元内的极性相关存储器切换介质形成桥接顶端和底层的Ag树枝状结构。桥接导致对应于“1”或“0”的电阻降低。

2. 发明申请

US20070041237A1 Media for writing highly resolved domains 审中-公开
标题翻译：撰写高度解决的域的媒体
公开(公告)号：US20070041237A1
公开(公告)日：2007-02-22
申请号：US11177550
申请日：2005-07-08
申请人： Yevgeny Anoikin , Donald Adams , Zhaohui Fan
发明人： Yevgeny Anoikin , Donald Adams , Zhaohui Fan
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , B82Y10/00 , G11B9/04 , G11B9/08 , G11B9/149 , G11C13/0004 , G11C23/00
摘要： Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure.
摘要翻译：根据本发明的系统可以包括与介质接触的尖端，所述介质包括设置在基底和外涂层之间的实施例中的相变材料（或其它实施例中的极性相关的记忆材料或其它记忆材料）。外涂层是具有导电部分和基本上非导电部分的共沉积膜，共沉积膜通过外涂层比通过外涂层更有效地传导电流。外涂层基本上引导电流，使得直接在尖端下方的相变材料的一部分被加热到足够的温度，使得材料的结构变得无序。然后将电流从相变材料中去除，其被快速冷却以形成具有大于结晶体结构的电阻率的畴。

3. 发明申请

US20110038082A1 COMBINED CMP AND ETCH PLANARIZATION 审中-公开
标题翻译：组合CMP和ETCH平面化
公开(公告)号：US20110038082A1
公开(公告)日：2011-02-17
申请号：US12540185
申请日：2009-08-12
申请人： Zhaohui Fan , David S. Kuo , Kim Yang Lee
发明人： Zhaohui Fan , David S. Kuo , Kim Yang Lee
IPC分类号： G11B5/74 , B05D5/12
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/743 , G11B5/855
摘要： A magnetic device having a magnetic feature, the magnetic feature including magnetic portions, a stop layer portion on each magnetic portion, and a region of non-magnetic material adjacent to the magnetic portions and the stop layer portions, where the stop layer portions define planar upper boundaries for the magnetic portions and an endpoint in planarization of the magnetic feature.
摘要翻译：具有磁性特征的磁性装置，磁性部分包括磁性部分，每个磁性部分上的停止层部分和与磁性部分和止挡层部分相邻的非磁性材料区域，其中阻挡层部分限定平面磁性部分的上边界和磁性特征的平坦化终点。

4. 发明申请

US20070008864A1 Patterned media for a high density data storage device 失效
标题翻译：用于高密度数据存储设备的图案化介质
公开(公告)号：US20070008864A1
公开(公告)日：2007-01-11
申请号：US11177639
申请日：2005-07-08
申请人： Zhaohui Fan , Nickolai Belov
发明人： Zhaohui Fan , Nickolai Belov
IPC分类号： G11B9/00
CPC分类号： G11B9/04 , G01Q80/00 , G11B5/743 , G11B9/149 , G11B11/002 , G11B11/08 , G11B2005/0021
摘要： Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a material having insulating properties. One or more of the plurality of cells can include a phase change material. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a voltage is applied to the tip, a current is drawn through the cell over which the tip is arranged. The current is drawn through the isolated cell at least a portion of the phase change material within the cell beneath the tip is heated to a sufficient temperature such that the material become amorphous in structure. The current is then removed from the phase change material, which is quickly cooled to form an amorphous domain having a resistance representing a “1” (or a “0”). In another embodiment the one or more of the plurality of cells can include a polarity dependent material. In an embodiment, the one or more cells can have a sidewall structure that tapers along the depth of the cell so that the cell has a wider cross-section near where a tip contacts the media and a narrower cross-section near where the cell contacts one of the substrate and an underlayer.
摘要翻译：根据本发明的系统可以包括可与介质接触的尖端，所述介质包括衬底和设置在衬底上的多个单元，一个或多个单元通过具有绝缘性能。多个单元中的一个或多个可以包括相变材料。介质与电压源接地或电连接，使得当尖端被放置成与介质接触并且电压被施加到尖端时，电流被吸引通过其上布置尖端的电池。电流通过分离的电池被吸入，尖端内的电池内的相变材料的至少一部分被加热到足够的温度，使得材料在结构上变成非晶态。然后将电流从相变材料中除去，其被快速冷却以形成具有表示“1”（或“0”）的电阻的非晶畴。在另一个实施例中，多个单元中的一个或多个可以包括极性依赖材料。在一个实施例中，一个或多个单元可以具有沿着单元的深度逐渐变细的侧壁结构，使得单元具有在尖端接触介质附近的更宽的横截面和在单元接触的附近的较窄的横截面衬底和底层之一。

5. 发明授权

US07463573B2 Patterned media for a high density data storage device 失效
标题翻译：用于高密度数据存储设备的图案化介质
公开(公告)号：US07463573B2
公开(公告)日：2008-12-09
申请号：US11177639
申请日：2005-07-08
申请人： Zhaohui Fan , Nickolai Belov
发明人： Zhaohui Fan , Nickolai Belov
IPC分类号： G11B9/00
CPC分类号： G11B9/04 , G01Q80/00 , G11B5/743 , G11B9/149 , G11B11/002 , G11B11/08 , G11B2005/0021
摘要： Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a material having insulating properties. One or more of the plurality of cells can include a phase change material. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a voltage is applied to the tip, a current is drawn through the cell over which the tip is arranged. The current is drawn through the isolated cell at least a portion of the phase change material within the cell beneath the tip is heated to a sufficient temperature such that the material become amorphous in structure. The current is then removed from the phase change material, which is quickly cooled to form an amorphous domain having a resistance representing a “1” (or a “0”). In another embodiment the one or more of the plurality of cells can include a polarity dependent material. In an embodiment, the one or more cells can have a sidewall structure that tapers along the depth of the cell so that the cell has a wider cross-section near where a tip contacts the media and a narrower cross-section near where the cell contacts one of the substrate and an underlayer.
摘要翻译：根据本发明的系统可以包括可与介质接触的尖端，所述介质包括衬底和设置在衬底上的多个单元，一个或多个单元通过具有绝缘性能。多个单元中的一个或多个可以包括相变材料。介质与电压源接地或电连接，使得当尖端被放置成与介质接触并且电压被施加到尖端时，电流被吸引通过其上布置尖端的电池。电流通过分离的电池被吸入，尖端内的电池内的相变材料的至少一部分被加热到足够的温度，使得材料在结构上变成非晶态。然后将电流从相变材料中除去，其被快速冷却以形成具有表示“1”（或“0”）的电阻的非晶畴。在另一个实施例中，多个单元中的一个或多个可以包括极性依赖材料。在一个实施例中，一个或多个单元可以具有沿着单元的深度逐渐变细的侧壁结构，使得单元具有在尖端接触介质附近的更宽的横截面和在单元接触的附近的较窄的横截面衬底和底层之一。

6. 发明申请

US20110141620A1 SHALLOW TRENCH DISCRETE TRACK MEDIA (DTM) AND PATTERN TRANSFER PROCESS 有权
标题翻译： SHOWOW TRENCH DISCRETE TRACK MEDIA（DTM）and PATTERN TRANSFER PROCESS
公开(公告)号：US20110141620A1
公开(公告)日：2011-06-16
申请号：US12637428
申请日：2009-12-14
申请人： Zhaohui Fan , David Kuo
发明人： Zhaohui Fan , David Kuo
IPC分类号： B44C1/22 , G11B5/82
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/65 , G11B5/66 , G11B5/743 , G11B5/855
摘要： A shallow trench discrete track media structure is fabricated by etching a magnetic recording layer to provide a plurality of discrete magnetic data tracks separated by shallow trenches. Each shallow trench has a trench floor formed at a depth in the magnetic recording layer that is less than the thickness of the magnetic recording layer. Exposed regions of the magnetic recording layer beneath the trench floor are reacted with reactive plasma to diminish the magnetic moment of the exposed regions.
摘要翻译：通过蚀刻磁记录层以提供由浅沟槽分隔的多个离散磁数据轨迹来制造浅沟槽离散轨道介质结构。每个浅沟槽具有形成在磁记录层中深度小于磁记录层的厚度的沟槽底板。在沟槽底部下方的磁记录层的暴露区域与反应性等离子体反应以减小暴露区域的磁矩。

7. 发明授权

US07309630B2 Method for forming patterned media for a high density data storage device 失效
公开(公告)号：US07309630B2
公开(公告)日：2007-12-18
申请号：US11177062
申请日：2005-07-08
申请人： Zhaohui Fan , Nickolai Belov
发明人： Zhaohui Fan , Nickolai Belov
IPC分类号： H01L21/336 , H01L21/00 , H01L21/8242 , H01L21/469
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/065 , G11B9/08 , G11B9/1472
摘要： Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a material having insulating properties. One or more of the plurality of cells can include a phase change material. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a voltage is applied to the tip, a current is drawn through the cell over which the tip is arranged. The current is drawn through the isolated cell at least a portion of the phase change material within the cell beneath the tip is heated to a sufficient temperature such that the material become amorphous in structure. The current is then removed from the phase change material, which is quickly cooled to form an amorphous domain having a resistance representing a “1” (or a “0”). In an embodiment, the one or more cells can have a sidewall structure that tapers along the depth of the cell so that the cell has a wider cross-section near where a tip contacts the media and a narrower cross-section near where the cell contacts one of the substrate and an underlayer.

8. 发明授权

US08422169B2 Shallow trench discrete track media (DTM) and pattern transfer process 有权
标题翻译：浅沟槽离散轨道介质（DTM）和模式转移过程
公开(公告)号：US08422169B2
公开(公告)日：2013-04-16
申请号：US12637428
申请日：2009-12-14
申请人： Zhaohui Fan , David Kuo
发明人： Zhaohui Fan , David Kuo
IPC分类号： G11B5/82
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/65 , G11B5/66 , G11B5/743 , G11B5/855
摘要： A shallow trench discrete track media structure is fabricated by etching a magnetic recording layer to provide a plurality of discrete magnetic data tracks separated by shallow trenches. Each shallow trench has a trench floor formed at a depth in the magnetic recording layer that is less than the thickness of the magnetic recording layer. Exposed regions of the magnetic recording layer beneath the trench floor are reacted with reactive plasma to diminish the magnetic moment of the exposed regions.
摘要翻译：通过蚀刻磁记录层以提供由浅沟槽分隔的多个离散磁数据轨迹来制造浅沟槽离散轨道介质结构。每个浅沟槽具有形成在磁记录层中深度小于磁记录层的厚度的沟槽底板。在沟槽底部下方的磁记录层的暴露区域与反应性等离子体反应以减小暴露区域的磁矩。

9. 发明申请

US20130004736A1 METHOD OF PROTECTING PATTERNED MAGNETIC MATERIALS OF A STACK 审中-公开
标题翻译：保护堆叠图案的磁性材料的方法
公开(公告)号：US20130004736A1
公开(公告)日：2013-01-03
申请号：US13173564
申请日：2011-06-30
申请人： Zhaohui Fan , Yuan Xu , Justin Jia-Jen Hwu , Koichi Wago , David Shiao-Min Kuo
发明人： Zhaohui Fan , Yuan Xu , Justin Jia-Jen Hwu , Koichi Wago , David Shiao-Min Kuo
IPC分类号： B32B3/00 , C23C16/56 , C23C16/00
CPC分类号： G11B5/8408 , C23C16/45525 , C23C16/513 , G11B5/855 , H01F41/32 , Y10T428/24802
摘要： The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.
摘要翻译：这些实施方案公开了一种保护叠层的图案化磁性材料的方法，包括沉积惰性材料的薄连续薄膜，惰性材料对图案化叠层的磁性材料是惰性的，薄膜连续薄膜将沉积在其上并形成薄的临时界面层，以保护未蚀刻的更高的浮雕磁岛的顶部和侧壁区域以及图案化叠层的磁性膜蚀刻表面从空气暴露损坏和与回填材料接触的损坏。

10. 发明申请

US20070010054A1 Method for forming patterned media for a high density data storage device 失效
标题翻译：用于形成用于高密度数据存储装置的图案化介质的方法
公开(公告)号：US20070010054A1
公开(公告)日：2007-01-11
申请号：US11177062
申请日：2005-07-08
申请人： Zhaohui Fan , Nickolai Belov
发明人： Zhaohui Fan , Nickolai Belov
IPC分类号： H01L21/336
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/065 , G11B9/08 , G11B9/1472
摘要： Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a material having insulating properties. One or more of the plurality of cells can include a phase change material. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a voltage is applied to the tip, a current is drawn through the cell over which the tip is arranged. The current is drawn through the isolated cell at least a portion of the phase change material within the cell beneath the tip is heated to a sufficient temperature such that the material become amorphous in structure. The current is then removed from the phase change material, which is quickly cooled to form an amorphous domain having a resistance representing a “1” (or a “0”). In an embodiment, the one or more cells can have a sidewall structure that tapers along the depth of the cell so that the cell has a wider cross-section near where a tip contacts the media and a narrower cross-section near where the cell contacts one of the substrate and an underlayer.
摘要翻译：根据本发明的系统可以包括可与介质接触的尖端，所述介质包括衬底和设置在衬底上的多个单元，一个或多个单元通过具有绝缘性能。多个单元中的一个或多个可以包括相变材料。介质与电压源接地或电连接，使得当尖端被放置成与介质接触并且电压被施加到尖端时，电流被吸引通过其上布置尖端的电池。电流通过分离的电池被吸入，尖端内的电池内的相变材料的至少一部分被加热到足够的温度，使得材料在结构上变成非晶态。然后将电流从相变材料中除去，其被快速冷却以形成具有表示“1”（或“0”）的电阻的非晶畴。在一个实施例中，一个或多个单元可以具有沿着单元的深度逐渐变细的侧壁结构，使得单元具有在尖端接触介质附近的更宽的横截面和在单元接触的附近的较窄的横截面衬底和底层之一。

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