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1. 发明授权

US07169231B2 Gas distribution system with tuning gas 有权
标题翻译：配有调节气的配气系统
公开(公告)号：US07169231B2
公开(公告)日：2007-01-30
申请号：US10318612
申请日：2002-12-13
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： C23C16/52 , C23C16/455 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67017
摘要： An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.
摘要翻译：提供了一种用于向处理室的不同区域提供不同气体的装置。提供了用于提供蚀刻气体流的气体供应。提供了一种与气体供应流体连接的分流器，用于将来自气体供给的蚀刻气体流分解成多个支腿。提供了与多个腿部中的至少一个腿流体连接的调节气体系统。

2. 发明授权

US08801892B2 Uniform etch system 有权
标题翻译：均匀刻蚀系统
公开(公告)号：US08801892B2
公开(公告)日：2014-08-12
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

3. 发明申请

US20080210377A1 UNIFORM ETCH SYSTEM 有权
标题翻译：均匀蚀刻系统
公开(公告)号：US20080210377A1
公开(公告)日：2008-09-04
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
IPC分类号： C23F1/08
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

4. 发明授权

US07371332B2 Uniform etch system 有权
标题翻译：均匀刻蚀系统
公开(公告)号：US07371332B2
公开(公告)日：2008-05-13
申请号：US10642083
申请日：2003-08-14
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： H01L21/306
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

5. 发明授权

US08465620B2 Hollow anode plasma reactor and method 有权
公开(公告)号：US08465620B2
公开(公告)日：2013-06-18
申请号：US12121047
申请日：2008-05-15
申请人： David W. Benzing , Babak Kadkhodayan
发明人： David W. Benzing , Babak Kadkhodayan
IPC分类号： H01L21/00
CPC分类号： H01J37/3244 , H01J37/32623
摘要： The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

6. 发明申请

US20110108524A1 LOCAL PLASMA CONFINEMENT AND PRESSURE CONTROL ARRANGEMENT AND METHODS THEREOF 有权
标题翻译：本地等离子体制约和压力控制装置及其方法
公开(公告)号：US20110108524A1
公开(公告)日：2011-05-12
申请号：US12872982
申请日：2010-08-31
申请人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/3065 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623
摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.
摘要翻译：提供了一种用于在处理室衬底处理中执行压力控制的装置。该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移。

7. 发明授权

US08500953B2 Edge ring assembly with dielectric spacer ring 有权
标题翻译：边缘环组件与介质隔离环
公开(公告)号：US08500953B2
公开(公告)日：2013-08-06
申请号：US12415114
申请日：2009-03-31
申请人： Jeremy Chang , Andreas Fischer , Babak Kadkhodayan
发明人： Jeremy Chang , Andreas Fischer , Babak Kadkhodayan
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/467 , H01J37/32623 , Y10T29/4973
摘要： An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.
摘要翻译：边缘环组件围绕等离子体蚀刻室中的衬底支撑表面。边缘环组件包括边缘环和介电隔离环。围绕基板支撑表面并且沿着径向方向被边缘环包围的介电间隔环构造成使边缘环与基板绝缘。边缘环组件围绕衬底支撑表面的结合可以降低聚合物在衬底的下侧和沿着衬底边缘的聚集，并增加衬底的等离子体蚀刻均匀性。

8. 发明申请

US20090090695A1 Yttria insulator ring for use inside a plasma chamber 审中-公开
标题翻译：用于等离子体室内的氧化钇绝缘体环
公开(公告)号：US20090090695A1
公开(公告)日：2009-04-09
申请号：US12230404
申请日：2008-08-28
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Yuehong Fu
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Yuehong Fu
IPC分类号： H01L21/3065 , B23P19/00
CPC分类号： C04B35/505 , C04B2235/725 , C04B2235/728 , C04B2235/77 , C04B2235/9692 , H01J37/32642 , H01J2237/0206 , Y10T29/4973
摘要： A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.
摘要翻译：提供用于等离子体处理装置的氧化钇绝缘体环，以最小化装置和地面延伸部之间的电弧，同时也增加清洗之间的平均时间（MTBC）。氧化钇绝缘体环可以位于设备的室的接地延伸部和等离子体产生区域或间隙之间，以及边缘环和接地延伸部之间。与石英环相比，氧化钇绝缘体环也可以提供改善的半导体衬底均匀性，因为由于反应性降低和介电常数增加导致RF耦合改善。

9. 发明授权

US06242360B1 Plasma processing system apparatus, and method for delivering RF power to a plasma processing 有权
标题翻译：等离子体处理系统装置和用于将等离子体处理的RF功率传送的方法
公开(公告)号：US06242360B1
公开(公告)日：2001-06-05
申请号：US09342969
申请日：1999-06-29
申请人： Andreas Fischer , Babak Kadkhodayan , Andras Kuthi
发明人： Andreas Fischer , Babak Kadkhodayan , Andras Kuthi
IPC分类号： H01L2100
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32577
摘要： The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.
摘要翻译：本发明提供了一种用于向等离子体处理室提供RF功率的等离子体处理装置，系统和方法。等离子体处理系统包括RF发生器，等离子体室，匹配网络盒，第一电缆，第二电缆以及用于电气隔离匹配网络盒的装置。 RF发生器产生用于传输到等离子体室的RF功率。等离子体室接收用于处理晶片的RF功率，其特征在于等离子体处理期间的内部阻抗。等离子体室具有用于返回RF电流的一个或多个壁。匹配网络盒能够接收RF电流并产生与等离子体室的内部阻抗匹配于RF发生器的阻抗的阻抗。第一条电缆耦合在RF发生器和匹配网络盒之间，用于在RF发生器和匹配网络盒之间传输RF功率。第二电缆耦合在匹配网络盒和等离子体室之间，用于在匹配网络和等离子体室之间传输RF功率。第二电缆提供用于从等离子体室到匹配网络盒的RF返回电流的返回路径。电隔离装置将匹配网络盒与等离子体室的电气接触电隔离，使得仅第二电缆提供用于从等离子体室到匹配网络盒的RF返回电流的返回路径。

10. 发明授权

US08900398B2 Local plasma confinement and pressure control arrangement and methods thereof 有权
标题翻译：局部血浆限制和压力控制布置及其方法
公开(公告)号：US08900398B2
公开(公告)日：2014-12-02
申请号：US12872982
申请日：2010-08-31
申请人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32623
摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.
摘要翻译：提供了一种用于在处理室衬底处理中执行压力控制的装置。该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移。

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