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1. 发明申请

US20110108524A1 LOCAL PLASMA CONFINEMENT AND PRESSURE CONTROL ARRANGEMENT AND METHODS THEREOF 有权
标题翻译：本地等离子体制约和压力控制装置及其方法
公开(公告)号：US20110108524A1
公开(公告)日：2011-05-12
申请号：US12872982
申请日：2010-08-31
申请人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/3065 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623
摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.
摘要翻译：提供了一种用于在处理室衬底处理中执行压力控制的装置。该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移。

2. 发明授权

US08900398B2 Local plasma confinement and pressure control arrangement and methods thereof 有权
标题翻译：局部血浆限制和压力控制布置及其方法
公开(公告)号：US08900398B2
公开(公告)日：2014-12-02
申请号：US12872982
申请日：2010-08-31
申请人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Michael C. Kellogg , Babak Kadkhodayan , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32623
摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.
摘要翻译：提供了一种用于在处理室衬底处理中执行压力控制的装置。该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移。

3. 发明申请

US20140060739A1 RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR 审中-公开
标题翻译：等离子体处理系统中的RF接地回路及其方法
公开(公告)号：US20140060739A1
公开(公告)日：2014-03-06
申请号：US13662331
申请日：2012-10-26
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
IPC分类号： H01J37/04
CPC分类号： H01J37/04 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading.
摘要翻译：公开了以至少两种模式操作等离子体处理工具的等离子体处理室的方法和装置。在第一模式中，基板支承组件可在间隙可调节范围内移动，以调节电极之间的间隙以适应不同的加工要求。在该第一模式中，只要间隙距离在间隙可调整范围内，RF接地返回路径连续性被维持而与间隙距离无关。在第二模式中，基板支承组件能够移动以进一步打开间隙以适应无阻碍的基板装载/卸载。

4. 发明申请

US20100003824A1 Clamped showerhead electrode assembly 有权
标题翻译：夹紧淋浴头电极组件
公开(公告)号：US20100003824A1
公开(公告)日：2010-01-07
申请号：US12216526
申请日：2008-07-07
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
IPC分类号： H01L21/3065 , C23C16/00 , B05C11/00
CPC分类号： H01J37/32532 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32605
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.
摘要翻译：用于等离子体反应室的电极组件，用于半导体衬底处理。组件包括上喷头电极，其包括通过夹紧环机械连接到背板的内电极和通过一系列间隔开的凸轮锁附接到背板的外电极。防护环围绕背板并且可移动到保护环中的开口与背板中的开口对准的位置，使得凸轮锁可以用工具旋转以释放从外部的上表面向上延伸的凸轮销电极。为了补偿差分热膨胀，夹紧环可以包括在间隔位置处的膨胀接合，这允许夹紧环吸收热应力。

5. 发明申请

US20120171872A1 CLAMPED SHOWERHEAD ELECTRODE ASSEMBLY 有权
标题翻译：夹紧式淋浴电极组件
公开(公告)号：US20120171872A1
公开(公告)日：2012-07-05
申请号：US13422696
申请日：2012-03-16
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
IPC分类号： H01L21/3065
CPC分类号： H01J37/32532 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32605
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.
摘要翻译：用于等离子体反应室的电极组件，用于半导体衬底处理。组件包括上喷头电极，其包括通过夹紧环机械连接到背板的内电极和通过一系列间隔开的凸轮锁附接到背板的外电极。防护环围绕背板并且可移动到保护环中的开口与背板中的开口对准的位置，使得凸轮锁可以用工具旋转以释放从外部的上表面向上延伸的凸轮销电极。为了补偿差分热膨胀，夹紧环可以包括在间隔位置处的膨胀接合，这允许夹紧环吸收热应力。

6. 发明申请

US20100000683A1 Showerhead electrode 有权
标题翻译：喷头电极
公开(公告)号：US20100000683A1
公开(公告)日：2010-01-07
申请号：US12216525
申请日：2008-07-07
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01J37/3244 , H01J37/32449
摘要： A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.
摘要翻译：淋浴头电极在其外周边包括内台阶和外台阶，外台阶与夹板环配合，该夹环将电极机械地附接到背板。

7. 发明授权

US08313805B2 Clamped showerhead electrode assembly 有权
公开(公告)号：US08313805B2
公开(公告)日：2012-11-20
申请号：US13422696
申请日：2012-03-16
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32532 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32605
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.

8. 发明授权

US08206506B2 Showerhead electrode 有权
标题翻译：喷头电极
公开(公告)号：US08206506B2
公开(公告)日：2012-06-26
申请号：US12216525
申请日：2008-07-07
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
IPC分类号： C23C16/50 , C23C16/503
CPC分类号： H01J37/3244 , H01J37/32449
摘要： A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.
摘要翻译：淋浴头电极在其外周边包括内台阶和外台阶，外台阶与夹板环配合，该夹环将电极机械地附接到背板。

9. 发明授权

US08161906B2 Clamped showerhead electrode assembly 有权
标题翻译：夹紧淋浴头电极组件
公开(公告)号：US08161906B2
公开(公告)日：2012-04-24
申请号：US12216526
申请日：2008-07-07
申请人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
发明人： Babak Kadkhodayan , Rajinder Dhindsa , Anthony de la Llera , Michael C. Kellogg
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32532 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32605
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.
摘要翻译：用于等离子体反应室的电极组件，用于半导体衬底处理。组件包括上喷头电极，其包括通过夹紧环机械连接到背板的内电极和通过一系列间隔开的凸轮锁附接到背板的外电极。防护环围绕背板并且可移动到保护环中的开口与背板中的开口对准的位置，使得凸轮锁可以用工具旋转以释放从外部的上表面向上延伸的凸轮销电极。为了补偿差分热膨胀，夹紧环可以包括在间隔位置处的膨胀接合，这允许夹紧环吸收热应力。

10. 发明授权

US09184028B2 Dual plasma volume processing apparatus for neutral/ion flux control 有权
标题翻译：用于中性/离子通量控制的双等离子体体积处理装置
公开(公告)号：US09184028B2
公开(公告)日：2015-11-10
申请号：US12850559
申请日：2010-08-04
申请人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译：半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

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