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1. 发明申请

US20080271849A1 HOLLOW ANODE PLASMA REACTOR AND METHOD 有权
标题翻译：中空阳极等离子体反应器和方法
公开(公告)号：US20080271849A1
公开(公告)日：2008-11-06
申请号：US12121047
申请日：2008-05-15
申请人： David W. Benzing , Babak Kadkhodayan
发明人： David W. Benzing , Babak Kadkhodayan
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32623
摘要： The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.
摘要翻译：等离子体处理装置包括等离子体室，第一电极，第二电极和等离子体容纳装置。等离子体容纳装置具有多个狭槽并且电耦合到第一电极。容纳装置被配置为将等离子体限制在电极间体积内，同时促进最大工艺气体流量。当通过施加电场来处理电极间体积内的气体而产生等离子体时，容纳装置将等离子体电气限制在电极间的体积上，而不会明显地限制气体从电极间的体积流动。

2. 发明授权

US06974523B2 Hollow anode plasma reactor and method 有权
标题翻译：空心阳极等离子体反应器及方法
公开(公告)号：US06974523B2
公开(公告)日：2005-12-13
申请号：US09859091
申请日：2001-05-16
申请人： David W. Benzing , Babak Kadkhodayan
发明人： David W. Benzing , Babak Kadkhodayan
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/3244 , H01J37/32623
摘要： The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.
摘要翻译：等离子体处理装置包括等离子体室，第一电极，第二电极和等离子体容纳装置。等离子体容纳装置具有多个狭槽并且电耦合到第一电极。容纳装置被配置为将等离子体限制在电极间体积内，同时促进最大工艺气体流量。当通过施加电场来处理电极间体积内的气体而产生等离子体时，容纳装置将等离子体电气限制在电极间的体积上，而不会明显地限制气体从电极间的体积流动。

3. 发明授权

US08465620B2 Hollow anode plasma reactor and method 有权
公开(公告)号：US08465620B2
公开(公告)日：2013-06-18
申请号：US12121047
申请日：2008-05-15
申请人： David W. Benzing , Babak Kadkhodayan
发明人： David W. Benzing , Babak Kadkhodayan
IPC分类号： H01L21/00
CPC分类号： H01J37/3244 , H01J37/32623
摘要： The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

4. 发明授权

US07470627B2 Wafer area pressure control for plasma confinement 有权
标题翻译：用于等离子体封隔的晶圆面积压力控制
公开(公告)号：US07470627B2
公开(公告)日：2008-12-30
申请号：US10966232
申请日：2004-10-15
申请人： Taejoon Han , David W. Benzing , Albert R. Ellingboe
发明人： Taejoon Han , David W. Benzing , Albert R. Ellingboe
IPC分类号： H01L21/205 , C23C4/10
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
摘要翻译：提供等离子体处理室，其提供改进的晶片面积压力控制。等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。该装置的一部分将是蚀刻剂气源和排气口。限制环限定晶片上方的区域。晶片面积压力取决于限制环上的压降。限制环是提供晶圆面积压力控制范围大于100％的晶圆区域压力控制装置的一部分。这样的晶片面积压力控制装置可以是三个可调约束环和保持器上的限制块，其可用于提供期望的晶片面积压力控制。

5. 发明授权

US06669253B2 Wafer boat and boat holder 失效
标题翻译：晶圆船和船只
公开(公告)号：US06669253B2
公开(公告)日：2003-12-30
申请号：US09740677
申请日：2000-12-18
申请人： David W. Benzing , Christopher A. Luebker
发明人： David W. Benzing , Christopher A. Luebker
IPC分类号： B65G4907
CPC分类号： H01L21/68707 , C23C16/4587 , C30B35/002 , H01L21/67313 , Y10S206/832
摘要： A wafer boat and boat handle are designed for automatic interlocking engagement and release upon manipulation by a user. The boat includes a side rail with a lip for engagement within a slot formed in the handle, and a handle cam activating contact surface for contacting a gripping block member of the handle. The handle includes at least one boat holding block with a boat lip holding slot therewithin. The handle also includes at least one boat gripping block that is rotatably engaged with the holding block, and which includes a frontwardly projecting rail gripping flange. When the boat lip is brought into the holding block slot, the gripping block rotates and the flange is brought over the top of the rail. The boat rail is thereby held between the slot and the flange of the handle, such that the boat may be lifted and moved.
摘要翻译：晶圆舟和船把手设计用于在用户操纵时自动互锁接合和释放。船包括具有唇缘的侧轨，用于接合在形成在手柄中的槽内，以及手柄凸轮启动接触表面，用于接触手柄的夹持块构件。手柄包括至少一个具有在其中的舟唇保持槽的船保持块。手柄还包括至少一个与保持块可旋转地接合并且包括向前突出的导轨夹紧凸缘的舟形抓持块。当船唇缘进入保持槽口时，夹紧块旋转，凸缘越过轨道顶部。因此，船轨被保持在槽和手柄的凸缘之间，使得船可以被提升和移动。

6. 发明授权

US4657616A In-situ CVD chamber cleaner 失效
标题翻译：原位CVD室清洁剂
公开(公告)号：US4657616A
公开(公告)日：1987-04-14
申请号：US735821
申请日：1985-05-17
申请人： David W. Benzing , Jeffrey C. Benzing , Arthur D. Boren , Ching C. Tang
发明人： David W. Benzing , Jeffrey C. Benzing , Arthur D. Boren , Ching C. Tang
IPC分类号： B08B7/00 , C03C15/00 , C23C16/44 , C30B25/08 , B44C1/22 , C03C25/06
CPC分类号： H01J37/32862 , B08B7/00 , C03C15/00 , C23C16/4405 , C30B25/08 , Y10S134/902 , Y10S156/913
摘要： An apparatus for the in-situ cleaning of Low Pressure Chemical Vapor Deposition tube chambers (32) or Reduced Pressure Epitaxy bell jar chambers (42) having a base member (22) to create a vacuum seal upon engagement with the loading end of the chamber, at least one powered electrode (62) which protrudes from the base member into the chamber, at least on grounded electrode (60) which also protrudes from the base member into the chamber, a means for introducing gas (92) into the chamber, and an electrical network (16) that creates a radio frequency electrical field between the powered electrode and the grounded electrode. A plasma is created in the chamber by the interaction of the gas and the RF field, and the plasma etches unwanted deposits from the inner wall of the chamber. Several different configurations of electrode structures are shown.
摘要翻译：一种用于原位清洗低压化学气相沉积管室（32）或减压外延钟罩室（42）的装置，其具有基部构件（22），以在与腔室的装载端接合时产生真空密封至少一个从所述基座部件突出到所述腔室中的至少一个动力电极（62）至少在从所述基座部件突出到所述腔室中的接地电极（60）上，用于将气体（92）引入所述腔室中的装置，以及在所述电源电极和所述接地电极之间产生射频电场的电网（16）。通过气体和RF场的相互作用在腔室中产生等离子体，并且等离子体从室的内壁蚀刻不想要的沉积物。示出了几种不同结构的电极结构。

7. 发明授权

US4572759A Troide plasma reactor with magnetic enhancement 失效
标题翻译： Troide等离子体反应堆具有磁强度
公开(公告)号：US4572759A
公开(公告)日：1986-02-25
申请号：US685499
申请日：1984-12-26
申请人： David W. Benzing
发明人： David W. Benzing
IPC分类号： H01L21/302 , C23F1/00 , H01J37/32 , H01L21/205 , H01L21/31 , H01L21/3213 , H05H1/46 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/32165 , H01J37/32587 , H01J37/3266 , H01L21/32137
摘要： A triode apparatus with magnetic enhancement for dry processing semiconductor wafers and the like. A conductive substantially cylindrical chamber contains a cathode that is connected to a first source of AC power. A wafer stage mounted on the inside of the chamber wall is connected to a second source of AC power. The chamber has means for connection to a reference voltage potential. Means for generating a magnetic field perpendicular to the electric field generated between the chamber walls and the cathode is also provided.
摘要翻译：用于干式半导体晶片等的磁加强的三极管装置。导电的大致圆柱形的腔室包含连接到第一源AC电源的阴极。安装在室壁内侧的晶片台连接到第二交流电源。该腔室具有连接到参考电压电位的装置。还提供了用于产生垂直于室壁和阴极之间产生的电场的磁场的装置。

8. 发明授权

US4786352A Apparatus for in-situ chamber cleaning 失效
标题翻译：用于原位室清洗的设备
公开(公告)号：US4786352A
公开(公告)日：1988-11-22
申请号：US907044
申请日：1986-09-12
申请人： David W. Benzing
发明人： David W. Benzing
IPC分类号： B01J19/00 , B01J19/08 , B08B7/00 , C23C16/44 , C23G5/00 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/31 , C23F1/02
CPC分类号： H01L21/67028 , B08B7/0035 , C23C16/4405 , C23G5/00 , H01J37/32091 , H01J37/32862
摘要： An apparatus for the in-situ cleaning of the interior surfaces of a processing chamber (14) and/or tooling or substrates disposed within said chamber where said chamber is composed substantially of dielectric material having at least one powered and one grounded electrode (30) formed from a thin film of conductive material deposited directly on the exterior surface of said chamber, a means for introducing gas (26) into the chamber, a means for establishing and maintaining a reduced pressure environment (22) within the chamber, and a supply of radio frequency power (32). A plasma is created in the chamber by the interaction of the RF field established in the chamber upon the application of RF power to the electrodes with the gas in the chamber, and the plasma creates gaseous species that etch unwanted deposits and/or contaminates from the interior surfaces of the chamber and/or the surfaces of tooling or substrates disposed in the chamber. Several different configurations and structures of the electrodes are shown as well as applications to chambers of several different types of processing equipment.
摘要翻译：一种用于原位清洁处理室（14）和/或设置在所述室内的工具或基板的设备，其中所述室基本上由电介质材料组成，所述电介质材料具有至少一个电源和一个接地电极（30）由直接沉积在所述室的外表面上的导电材料薄膜形成，用于将气体（26）引入所述腔室的装置，用于建立和维持所述室内的减压环境（22）的装置的射频功率（32）。通过室内建立的RF场的相互作用产生等离子体，在室内利用气体将RF功率施加到电极上，而等离子体产生气体物质，从而将不需要的沉积物和/或污染物从腔室的内表面和/或设置在腔室中的工具或基底的表面。示出了电极的几种不同配置和结构，以及应用于几种不同类型的处理设备的室。

9. 发明授权

US06823815B2 Wafer area pressure control for plasma confinement 有权
标题翻译：用于等离子体封隔的晶圆面积压力控制
公开(公告)号：US06823815B2
公开(公告)日：2004-11-30
申请号：US10225655
申请日：2002-08-21
申请人： Taejoon Han , David W. Benzing , Albert R. Ellingboe
发明人： Taejoon Han , David W. Benzing , Albert R. Ellingboe
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
摘要翻译：提供等离子体处理室，其提供改进的晶片面积压力控制。等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。该装置的一部分将是蚀刻剂气源和排气口。限制环限定晶片上方的区域。晶片面积压力取决于限制环上的压降。限制环是提供晶圆面积压力控制范围大于100％的晶圆区域压力控制装置的一部分。这样的晶片面积压力控制装置可以是三个可调约束环和保持器上的限制块，其可用于提供期望的晶片面积压力控制。

10. 发明授权

US06492774B1 Wafer area pressure control for plasma confinement 有权
标题翻译：用于等离子体封隔的晶圆面积压力控制
公开(公告)号：US06492774B1
公开(公告)日：2002-12-10
申请号：US09684695
申请日：2000-10-04
申请人： Taejoon Han , David W. Benzing , Albert R. Ellingboe
发明人： Taejoon Han , David W. Benzing , Albert R. Ellingboe
IPC分类号： H01J724
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
摘要翻译：提供等离子体处理室，其提供改进的晶片面积压力控制。等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。该装置的一部分将是蚀刻剂气源和排气口。限制环限定晶片上方的区域。晶片面积压力取决于限制环上的压降。限制环是提供晶圆面积压力控制范围大于100％的晶圆区域压力控制装置的一部分。这样的晶片面积压力控制装置可以是三个可调约束环和保持器上的限制块，其可用于提供期望的晶片面积压力控制。

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