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1. 发明授权

US08872279B2 Transistor structure having an electrical contact structure with multiple metal interconnect levels staggering one another 有权
标题翻译：晶体管结构具有电接触结构，多个金属互连层互相交错
公开(公告)号：US08872279B2
公开(公告)日：2014-10-28
申请号：US13347851
申请日：2012-01-11
申请人： David R. Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
发明人： David R. Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
IPC分类号： H01L27/088 , H01L23/482 , H01L29/423 , H01L29/78
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/528 , H01L27/088 , H01L29/41758 , H01L29/42376 , H01L29/4238 , H01L29/78 , H01L2924/0002 , H01L2924/14 , H01L2924/30105 , H01L2924/00
摘要： An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.
摘要翻译：电接触结构沿其长度分布电流。电接触结构包括在n级金属上的多个n个金属矩形。一个金属层上的矩形至少具有宽度的宽度，并且垂直地在宽度上覆盖紧接在下面的金属层上的矩形。一个金属层上的矩形长度短于第一端，并且在紧靠下方的金属层上的矩形基本对齐。矩形的第一端基本对齐。本发明的示例性FET晶体管的特征是源极和漏极端子电接触结构，在两端连接栅极矩形的多级金属环和大于最小栅极至栅极间隔。本发明例如在电迁移兼容的高性能晶体管中是有用的。

2. 发明申请

US20120112819A1 ELECTROMIGRATION-COMPLAINT HIGH PERFORMANCE FET LAYOUT 有权
标题翻译：电化学高性能FET布局
公开(公告)号：US20120112819A1
公开(公告)日：2012-05-10
申请号：US13347851
申请日：2012-01-11
申请人： David Ross Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
发明人： David Ross Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
IPC分类号： G11C5/14 , H01L27/088
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/528 , H01L27/088 , H01L29/41758 , H01L29/42376 , H01L29/4238 , H01L29/78 , H01L2924/0002 , H01L2924/14 , H01L2924/30105 , H01L2924/00
摘要： An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.
摘要翻译：电接触结构沿其长度分布电流。电接触结构包括在n级金属上的多个n个金属矩形。一个金属层上的矩形至少具有宽度的宽度，并且垂直地在宽度上覆盖紧接在下面的金属层上的矩形。一个金属层上的矩形长度短于第一端，并且在紧靠下方的金属层上的矩形基本对齐。矩形的第一端基本对齐。本发明的示例性FET晶体管的特征是源极和漏极端子电接触结构，在两端连接栅极矩形的多级金属环和大于最小栅极至栅极间隔。本发明例如在电迁移兼容的高性能晶体管中是有用的。

3. 发明授权

US08178908B2 Electrical contact structure having multiple metal interconnect levels staggering one another 有权
标题翻译：具有多个金属互连级别彼此交错的电接触结构
公开(公告)号：US08178908B2
公开(公告)日：2012-05-15
申请号：US12116470
申请日：2008-05-07
申请人： David Ross Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
发明人： David Ross Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
IPC分类号： H01L29/41
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/528 , H01L27/088 , H01L29/41758 , H01L29/42376 , H01L29/4238 , H01L29/78 , H01L2924/0002 , H01L2924/14 , H01L2924/30105 , H01L2924/00
摘要： An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.
摘要翻译：电接触结构沿其长度分布电流。电接触结构包括在n级金属上的多个n个金属矩形。一个金属层上的矩形至少具有宽度的宽度，并且垂直地在宽度上覆盖紧接在下面的金属层上的矩形。一个金属层上的矩形长度短于第一端，并且在紧靠下方的金属层上的矩形基本对齐。矩形的第一端基本对齐。本发明的示例性FET晶体管的特征是源极和漏极端子电接触结构，在两端连接栅极矩形的多级金属环和大于最小栅极至栅极间隔。本发明例如在电迁移兼容的高性能晶体管中是有用的。

4. 发明申请

US20090278207A1 Electromigration-Complaint High Performance FET Layout 有权
标题翻译：电迁移投诉高性能FET布局
公开(公告)号：US20090278207A1
公开(公告)日：2009-11-12
申请号：US12116470
申请日：2008-05-07
申请人： David Ross Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
发明人： David Ross Greenberg , Jean-Olivier Plouchart , Alberto Valdes-Garcia
IPC分类号： H01L29/78 , H01B5/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/528 , H01L27/088 , H01L29/41758 , H01L29/42376 , H01L29/4238 , H01L29/78 , H01L2924/0002 , H01L2924/14 , H01L2924/30105 , H01L2924/00
摘要： An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.
摘要翻译：电接触结构沿其长度分布电流。电接触结构包括在n级金属上的多个n个金属矩形。一个金属层上的矩形至少具有宽度的宽度，并且垂直地在宽度上覆盖紧接在下面的金属层上的矩形。一个金属层上的矩形长度短于第一端，并且在紧靠下方的金属层上的矩形基本对齐。矩形的第一端基本对齐。本发明的示例性FET晶体管的特征是源极和漏极端子电接触结构，在两端连接栅极矩形的多级金属环和大于最小栅极至栅极间隔。本发明例如在电迁移兼容的高性能晶体管中是有用的。

5. 发明授权

US08106383B2 Self-aligned graphene transistor 有权
标题翻译：自对准石墨烯晶体管
公开(公告)号：US08106383B2
公开(公告)日：2012-01-31
申请号：US12617770
申请日：2009-11-13
申请人： Keith A. Jenkins , Yu-Ming Lin , Alberto Valdes-Garcia
发明人： Keith A. Jenkins , Yu-Ming Lin , Alberto Valdes-Garcia
IPC分类号： H01L29/16 , H01L21/04 , H01L51/30
CPC分类号： H01L29/78684
摘要： A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.
摘要翻译：石墨烯场效应晶体管包括栅极堆叠，栅极堆叠包括种子层，形成在种子层上的栅极氧化物和形成在栅极氧化物上的栅极金属; 绝缘层; 以及在种子层和绝缘层之间移动的石墨烯片。

6. 发明授权

US08797211B2 Millimeter-wave communications using a reflector 有权
标题翻译：使用反射镜的毫米波通信
公开(公告)号：US08797211B2
公开(公告)日：2014-08-05
申请号：US13024881
申请日：2011-02-10
申请人： Alberto Valdes-Garcia
发明人： Alberto Valdes-Garcia
IPC分类号： H04B7/145
CPC分类号： H04B7/145 , H01Q1/007 , H01Q3/20 , H01Q3/26 , H01Q19/102 , H01Q19/104
摘要： Methods and systems for establishing a non-line of sight millimeter wave connection that include a transmitter unit having beam-steering capability, a receiver unit having beam-steering capability, and a reflecting unit in a position having a line-of-sight path to the transmitter unit and the receiver unit. The reflecting unit includes an attachment mechanism configured to attach to a mounting point on an object or surface, a reflecting surface that is reflective to millimeter-wave radiation, and an adjustable pivot connected between the attachment mechanism and the reflecting surface configured to permit directional positioning of the reflecting surface relative to the attachment mechanism.
摘要翻译：用于建立非线视距毫米波连接的方法和系统，其包括具有光束转向能力的发射器单元，具有光束转向能力的接收器单元和在具有视线路径的位置的位置的反射单元发射机单元和接收机单元。反射单元包括被配置为附接到物体或表面上的安装点，反射到毫米波辐射的反射表面的连接机构，以及连接在附接机构和反射表面之间的可调节枢轴，其被配置为允许定向定位的反射表面相对于附接机构。

7. 发明授权

US08618983B2 Phased-array transceiver for millimeter-wave frequencies 有权
标题翻译：用于毫米波频率的相控阵收发器
公开(公告)号：US08618983B2
公开(公告)日：2013-12-31
申请号：US12750242
申请日：2010-03-30
申请人： Ping-Yu Chen , Brian A. Floyd , Jie-Wei Lai , Arun S. Natarajan , Sean T. Nicolson , Scott K. Reynolds , Ming-Dai Tsai , Alberto Valdes-Garcia , Jing-Hong C. Zhan
发明人： Ping-Yu Chen , Brian A. Floyd , Jie-Wei Lai , Arun S. Natarajan , Sean T. Nicolson , Scott K. Reynolds , Ming-Dai Tsai , Alberto Valdes-Garcia , Jing-Hong C. Zhan
IPC分类号： H01Q3/24 , H01Q3/36
CPC分类号： H01Q3/2694 , H01Q3/267
摘要： A phased-array transmitter and receiver that may be effectively implemented on a silicon substrate. The transmitter distributes to front-ends, and the receiver combines signals from front-ends, using a power distribution/combination tree that employs both passive and active elements. By monitoring the power inputs and outputs, a digital control is able to rapidly provide phase and gain correction information to the front-ends. Such a transmitter/receiver includes a plurality of radio frequency (RF) front-ends and a power splitting/combining network that includes active and passive components configured to distribute signals to/from the front-ends.
摘要翻译：可以有效地实现在硅衬底上的相控阵发射器和接收器。发射机分配到前端，并且接收器使用采用被动和有源元件的功率分配/组合树组合来自前端的信号。通过监控功率输入和输出，数字控制能够快速向前端提供相位和增益校正信息。这样的发射机/接收机包括多个射频（RF）前端和功率分配/组合网络，其包括配置成向/从前端分配信号的有源和无源组件。

8. 发明申请

US20110114919A1 SELF-ALIGNED GRAPHENE TRANSISTOR 有权
标题翻译：自对准的石墨晶体管
公开(公告)号：US20110114919A1
公开(公告)日：2011-05-19
申请号：US12617770
申请日：2009-11-13
申请人： Keith A. Jenkins , Yu-Ming Lin , Alberto Valdes-Garcia
发明人： Keith A. Jenkins , Yu-Ming Lin , Alberto Valdes-Garcia
IPC分类号： H01L29/16 , H01L21/04
CPC分类号： H01L29/78684
摘要： A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.
摘要翻译：石墨烯场效应晶体管包括栅极堆叠，栅极堆叠包括种子层，形成在种子层上的栅极氧化物和形成在栅极氧化物上的栅极金属; 绝缘层; 以及在种子层和绝缘层之间移动的石墨烯片。

9. 发明申请

US20110063169A1 PHASED-ARRAY TRANSCEIVER FOR MILLIMETER-WAVE FREQUENCIES 有权
标题翻译：毫米波频率的同步阵列收发器
公开(公告)号：US20110063169A1
公开(公告)日：2011-03-17
申请号：US12750242
申请日：2010-03-30
申请人： PING-YU CHEN , Brian A. Floyd , Jie-Wei Lai , Arun S. Natarajan , Sean T. Nicolson , Scott K. Reynolds , Ming-Dai Tsai , Alberto Valdes-Garcia , Jing-Hong C. Zhan
发明人： PING-YU CHEN , Brian A. Floyd , Jie-Wei Lai , Arun S. Natarajan , Sean T. Nicolson , Scott K. Reynolds , Ming-Dai Tsai , Alberto Valdes-Garcia , Jing-Hong C. Zhan
IPC分类号： H01Q3/00
CPC分类号： H01Q3/2694 , H01Q3/267
摘要： A phased-array transmitter and receiver that may be effectively implemented on a silicon substrate. The transmitter distributes to front-ends, and the receiver combines signals from front-ends, using a power distribution/combination tree that employs both passive and active elements. By monitoring the power inputs and outputs, a digital control is able to rapidly provide phase and gain correction information to the front-ends. Such a transmitter/receiver includes a plurality of radio frequency (RF) front-ends and a power splitting/combining network that includes active and passive components configured to distribute signals to/from the front-ends.
摘要翻译：可以有效地在硅衬底上实现的相控阵发射器和接收器。发射机分配到前端，并且接收器使用采用被动和有源元件的功率分配/组合树组合来自前端的信号。通过监控功率输入和输出，数字控制能够快速向前端提供相位和增益校正信息。这样的发射机/接收机包括多个射频（RF）前端和功率分配/组合网络，其包括配置成向/从前端分配信号的有源和无源组件。

10. 发明申请

US20120206299A1 MILLIMETER-WAVE COMMUNICATIONS USING A REFLECTOR 有权
标题翻译：使用反射器的毫米波通信
公开(公告)号：US20120206299A1
公开(公告)日：2012-08-16
申请号：US13024881
申请日：2011-02-10
申请人： Alberto Valdes-Garcia
发明人： Alberto Valdes-Garcia
IPC分类号： H01Q15/00 , H04B7/14 , H01Q15/20
CPC分类号： H04B7/145 , H01Q1/007 , H01Q3/20 , H01Q3/26 , H01Q19/102 , H01Q19/104
摘要： Methods and systems for establishing a non-line of sight millimeter wave connection that include a transmitter unit having beam-steering capability, a receiver unit having beam-steering capability, and a reflecting unit in a position having a line-of-sight path to the transmitter unit and the receiver unit. The reflecting unit includes an attachment mechanism configured to attach to a mounting point on an object or surface, a reflecting surface that is reflective to millimeter-wave radiation, and an adjustable pivot connected between the attachment mechanism and the reflecting surface configured to permit directional positioning of the reflecting surface relative to the attachment mechanism.
摘要翻译：用于建立非线视距毫米波连接的方法和系统，其包括具有光束转向能力的发射器单元，具有光束转向能力的接收器单元和在具有视线路径的位置的位置的反射单元发射机单元和接收机单元。反射单元包括被配置为附接到物体或表面上的安装点，反射于毫米波辐射的反射表面的连接机构，以及连接在附接机构和反射表面之间的可调节枢轴，其被配置成允许定向定位的反射表面相对于附接机构。

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