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1. 发明申请

US20090008748A1 ULTRA-THIN DIE AND METHOD OF FABRICATING SAME 有权
标题翻译：超薄薄膜及其制造方法
公开(公告)号：US20090008748A1
公开(公告)日：2009-01-08
申请号：US12211556
申请日：2008-09-16
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
IPC分类号： H01L29/06
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

2. 发明授权

US08198705B2 Ultra-thin die and method of fabricating same 有权
标题翻译：超薄模及其制造方法
公开(公告)号：US08198705B2
公开(公告)日：2012-06-12
申请号：US12211556
申请日：2008-09-16
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
IPC分类号： H01L29/06
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

3. 发明授权

US07507638B2 Ultra-thin die and method of fabricating same 有权
标题翻译：超薄模及其制造方法
公开(公告)号：US07507638B2
公开(公告)日：2009-03-24
申请号：US10881144
申请日：2004-06-30
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Weston , Steven R. Young , Robert W. Baird
IPC分类号： H01L21/30
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

4. 发明授权

US06387787B1 Lithographic template and method of formation and use 有权
公开(公告)号：US06387787B1
公开(公告)日：2002-05-14
申请号：US09797558
申请日：2001-03-02
申请人： David P. Mancini , Doug J. Resnick , William J. Dauksher
发明人： David P. Mancini , Doug J. Resnick , William J. Dauksher
IPC分类号： H01L213205
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S438/942 , Y10S438/945 , Y10T428/31507
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), an optional etch stop layer (16) formed on a surface (14) of the substrate (12), and a patterning layer (20) formed on a surface (18) of the etch stop layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).

5. 发明授权

US07063919B2 Lithographic template having a repaired gap defect method of repair and use 失效
标题翻译：具有修复间隙缺陷修复和使用方法的平版印刷模板
公开(公告)号：US07063919B2
公开(公告)日：2006-06-20
申请号：US10209167
申请日：2002-07-31
申请人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
发明人： David P. Mancini , William J. Dauksher , Kevin J. Nordquist , Douglas J. Resnick
IPC分类号： G03H1/04
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/60 , G03F7/0002
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及包括修复缺陷的改进的光刻模板，制造改进的光刻模板的方法，修复模板中存在的缺陷的方法，以及用于制造具有改进的光刻模板的半导体器件的方法。光刻模板（10）形成在浮雕结构（26）内具有浮雕结构（26）和修复的间隙缺陷（36）。模板（10）用于制造半导体器件（40），用于通过将模板（10）靠近其上形成有辐射敏感材料的半导体器件（40）定位来影响器件（40）中的图案，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕结构中。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（40）的制造。

6. 发明授权

US06580172B2 Lithographic template and method of formation and use 有权
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US06580172B2
公开(公告)日：2003-06-17
申请号：US10103608
申请日：2002-03-21
申请人： David P. Mancini , Doug J. Resnick , William J. Dauksher
发明人： David P. Mancini , Doug J. Resnick , William J. Dauksher
IPC分类号： H01L2348
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S438/942 , Y10S438/945 , Y10T428/31507
摘要： The lithographic template is formed having a substrate, an optional etch stop layer formed on a surface of the substrate, and a patterning layer formed on a surface of the etch stop layer. The template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor device having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template is then removed to complete fabrication of the semiconductor device.
摘要翻译：形成光刻模板，其具有衬底，形成在衬底的表面上的任选的蚀刻停止层以及形成在蚀刻停止层的表面上的图案化层。模板用于制造用于影响器件中图案的半导体器件，方法是将模板定位在其上形成有辐射敏感材料的半导体器件附近，并施加压力以使辐射敏感材料流入浮雕图像存在于模板上。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板以完成半导体器件的制造。

7. 发明授权

US06562553B2 Lithographic printing method using a low surface energy layer 失效
标题翻译：使用低表面能层的平版印刷方法
公开(公告)号：US06562553B2
公开(公告)日：2003-05-13
申请号：US09881242
申请日：2001-05-10
申请人： David P. Mancini , Douglas J. Resnick
发明人： David P. Mancini , Douglas J. Resnick
IPC分类号： G03F700
CPC分类号： G03F7/115 , G03F1/48 , G03F7/2014
摘要： A method of contact printing on a device using a partially transparent mask (18) having first and second surfaces, comprises the steps of applying a layer of low surface energy polymeric material (22) to the first surface of the mask; placing the first surface (24) of the mask contiguous to the device (10), the layer of low surface energy polymeric material being substantially in contact with the device; and applying radiation (32) to the second surface of the mask for affecting a pattern in the device.
摘要翻译：使用具有第一表面和第二表面的部分透明掩模（18）在装置上进行接触印刷的方法包括以下步骤：将低表面能聚合材料层（22）施加到掩模的第一表面; 将所述掩模的所述第一表面（24）邻近所述装置（10）放置，所述低表面能聚合物材料层基本上与所述装置接触; 以及将辐射（32）施加到所述掩模的第二表面以影响所述装置中的图案。

8. 发明授权

US06368924B1 Amorphous carbon layer for improved adhesion of photoresist and method of fabrication 有权
标题翻译：非晶碳层，用于改善光致抗蚀剂的附着力和制造方法
公开(公告)号：US06368924B1
公开(公告)日：2002-04-09
申请号：US09703208
申请日：2000-10-31
申请人： David P. Mancini , Steven M. Smith , Douglas J. Resnick
发明人： David P. Mancini , Steven M. Smith , Douglas J. Resnick
IPC分类号： H01L21336
CPC分类号： H01L21/0271 , G03F7/09 , G03F7/11 , H01L21/31111 , H01L21/3146
摘要： An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.
摘要翻译：一种改进且新颖的半导体器件，包括用于改善光致抗蚀剂粘附性的无定形碳层和制造方法。该装置包括具有表面的基板，形成在基板的表面上的碳层和形成在碳层的表面上的抗蚀剂层。该器件通过提供具有表面的衬底，使用等离子体增强化学气相沉积（PECVD）或溅射在衬底的表面上沉积碳层并在碳层的表面上形成抗蚀剂层而形成。

9. 发明授权

US06576520B2 Amorphous carbon layer for improved adhesion of photoresist and method of fabrication 有权
公开(公告)号：US06576520B2
公开(公告)日：2003-06-10
申请号：US10040984
申请日：2002-01-07
申请人： David P. Mancini , Steven M. Smith , Douglas J. Resnick
发明人： David P. Mancini , Steven M. Smith , Douglas J. Resnick
IPC分类号： H01L21336
CPC分类号： H01L21/0271 , G03F7/09 , G03F7/11 , H01L21/31111 , H01L21/3146
摘要： An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer, formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

10. 发明授权

US06300042B1 Lithographic printing method using a low surface energy layer 有权
公开(公告)号：US06300042B1
公开(公告)日：2001-10-09
申请号：US09198627
申请日：1998-11-24
申请人： David P. Mancini , Douglas J. Resnick
发明人： David P. Mancini , Douglas J. Resnick
IPC分类号： G03F700
CPC分类号： G03F7/115 , G03F1/48 , G03F7/2014
摘要： A method of contact printing on a device using a partially transparent mask (18) having first and second surfaces, comprises the steps of applying a layer of low surface energy polymeric material (22) to the first surface of the mask; placing the first surface (24) of the mask contiguous to the device (10), the layer of low surface energy polymeric material being substantially in contact with the device; and applying radiation (32) to the second surface of the mask for affecting a pattern in the device.

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